Hatem, US
Christopher Hatem, Billerica, MA US
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20150279974 | CONVERSION PROCESS UTILIZED FOR MANUFACTURING ADVANCED 3D FEATURES FOR SEMICONDUCTOR DEVICE APPLICATIONS - Embodiments of the present invention provide methods for forming fin structure with desired materials using a conversion process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of forming a fin structure on a substrate includes performing an directional plasma process on a fin structure formed from a substrate comprising a first type of atoms, the directional plasma process dopes a second type of atoms on sidewalls of the fin structure, performing a surface modification process to form a surface modified layer on the sidewalls of the fin structure reacting with the first type of atoms, replacing the first type of the atoms with the second type of the atoms in the fin structure during the surface modification process, and forming the fin structure including the second type of the atoms on the substrate. | 10-01-2015 |
Christopher Hatem, Salisbury, MA US
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20100041218 | USJ TECHNIQUES WITH HELIUM-TREATED SUBSTRATES - A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction. | 02-18-2010 |
Christopher Hatem, Hampton, NH US
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20120288637 | METHODS OF AFFECTING MATERIAL PROPERTIES AND APPLICATIONS THEREFOR - Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids. | 11-15-2012 |
20130045557 | DEPOSITION OF POROUS FILMS FOR THERMOELECTRIC APPLICATIONS - An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film. | 02-21-2013 |
20140037858 | ANISOTROPIC SURFACE ENERGY MODULATION BY ION IMPLANTATION - Methods of modulating a material's surface energies through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier, are disclosed. Two or more ion implants may be performed, where the implant regions of two of the ion implants overlap. The species implanted by a first implant may increase the hydrophobicity of the surface, wherein the species implanted by the second implant may decrease the hydrophobicity of the surface. In this way, a workpiece can be implanted such that different portions of its surface have different surface energies. | 02-06-2014 |
20140154834 | USE OF DOPANTS WITH DIFFERENT DIFFUSIVITIES FOR SOLAR CELL MANUFACTURE - A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized. | 06-05-2014 |
Christopher Hatem, Cambridge, MA US
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20110039034 | PULSED DEPOSITION AND RECRYSTALLIZATION AND TANDEM SOLAR CELL DESIGN UTILIZING CRYSTALLIZED/AMORPHOUS MATERIAL - A method of depositing and crystallizing materials on a substrate is disclosed. In a particular embodiment, the method may include creating a plasma having deposition-related species and energy-carrying species. During a first time period, no bias voltage is applied to the substrate, and species are deposited on the substrate via plasma deposition. During a second time period, a voltage is applied to the substrate, which attracts ions to and into the deposited species, thereby causing the deposited layer to crystallize. This process can be repeated until an adequate thickness is achieved. In another embodiment, the bias voltage or bias pulse duration can be varied to change the amount of crystallization that occurs. In another embodiment, a dopant may be used to dope the deposited layers. | 02-17-2011 |
Christopher R. Hatem, Billerica, MA US
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20150364325 | TECHNIQUES FOR INCREASED DOPANT ACTIVATION IN COMPOUND SEMICONDUCTORS - A method of doping a compound semiconductor substrate includes: setting a first substrate temperature for the compound semiconductor substrate in a first temperature range; implanting a dopant species into the compound semiconductor substrate at a first ion dose at the first substrate temperature; and annealing the compound semiconductor substrate after the implanting the ions. In conjunction with the annealing, the first ion dose is effective to generate a first dopant activation in the first temperature range higher than a second dopant activation resulting from implantation of the first ion dose at a second substrate temperature below the first temperature range, and is higher than a third dopant activation resulting from implantation of the first ion dose at a third substrate temperature above the first temperature range. | 12-17-2015 |
Christopher R. Hatem, Cambridge, MA US
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20090200494 | TECHNIQUES FOR COLD IMPLANTATION OF CARBON-CONTAINING SPECIES - Techniques for cold implantation of carbon-containing species are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation including a cooling device for cooling a target material to a predetermined temperature, and an ion implanter for implanting the target material with a carbon-containing species at the predetermined temperature to improve at least one of strain and amorphization. | 08-13-2009 |
20100279479 | Formation Of Raised Source/Drain On A Strained Thin Film Implanted With Cold And/Or Molecular Carbon - A method is disclosed for enhancing tensile stress in the channel region of a semiconductor structure. The method includes performing one or more cold-carbon or molecular carbon ion implantation steps to implant carbon ions within the semiconductor structure to create strain layers on either side of a channel region. Raised source/drain regions are then formed above the strain layers, and subsequent ion implantation steps are used to dope the raised source/drain region. A millisecond anneal step activates the strain layers and the raised source/drain regions. The strain layers enhances carrier mobility within a channel region of the semiconductor structure, while the raised source/drain regions minimize reduction in strain in the strain layer caused by subsequent implantation of dopant ions in the raised source/drain regions. | 11-04-2010 |
Christopher R. Hatem, Hampton, NH US
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20120258583 | METHOD FOR EPITAXIAL LAYER OVERGROWTH - Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then formed on the workpiece. For example, gallium nitride may be formed on a silicon, silicon carbide, or sapphire workpiece. The width of the implanted regions can be configured to compensate for any shrinkage during annealing. | 10-11-2012 |
20120295444 | TECHNIQUES FOR FORMING 3D STRUCTURES - A technique for forming 3D structures is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for forming 3D structures. The method may comprise providing a substrate comprising at least two vertically extending fins that are spaced apart from one another to define a trench; depositing a dielectric material in the trench between the at least two vertically extending fins; providing an etch stop layer within the dielectric material, the etch stop layer having a first side and a second opposite side; removing the dielectric material near the first side of the etch stop layer. | 11-22-2012 |
20130064989 | PLASMA PROCESSING OF WORKPIECES TO FORM A COATING - A surface of an insulating workpiece is implanted to form either hydrophobic or hydrophilic implanted regions. A conductive coating is deposited on the workpiece. The coating may be a polymer in one instance. This coating preferentially forms either on the implanted regions if these implanted regions are hydrophilic or on the non-implanted regions if the implanted regions are hydrophobic. | 03-14-2013 |
Matthew T. Hatem, Portsmouth, NH US
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20090125837 | TAB CONTROL WITH TYPE AHEAD AND THUMBNAIL IMAGES - Embodiments of the present invention address deficiencies of the art in respect to tab control presentation and provide a method, system and computer program product for tab control management with type-ahead and thumbnail imagery. In an embodiment of the invention, a tab control navigation method can be provided. The method can include arranging thumbnail images for corresponding tabs in a tab control within a tab navigation view, and, in response to a selection of one of the thumbnail images, activating a corresponding one of the tabs in the tab control. The method further can include receiving text in a type-ahead filter, and filtering the tab navigation view to include only thumbnail images corresponding to tabs associated with the text. | 05-14-2009 |
Tracy Mckie Hatem, Norfolk, VA US
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20090113933 | Communication system, device and method - A communication system for conveying needs between two individuals who cannot verbally communicate with one another. The system is especially useful for use with incapacitated patients and includes a plurality of items which represent several conditions that the patients may experience and which may be corrected by a caregiver. The items are bound together such that an incapacitated patient may easily access an appropriate item and point to it to indicate to the caregiver that corrective action needs to be taken. In this manner, a communication system is developed between the incapacitated patient and the caregiver that does not rely on verbal communications. | 05-07-2009 |
20110302957 | Communication system, device and method - A communication system for conveying needs between two individuals who cannot verbally communicate with one another. The system is especially useful for use with incapacitated patients and includes a plurality of items which represent several conditions that the patients may experience and which may be corrected by a caregiver. The items are bound together such that an incapacitated patient may easily access an appropriate item and point to it to indicate to the caregiver that corrective action needs to be taken. In this manner, a communication system is developed between the incapacitated patient and the caregiver that does not rely on verbal communications. | 12-15-2011 |