Patent application number | Description | Published |
20080280583 | Submillimeter wave heterodyne receiver - In an embodiment, a submillimeter wave heterodyne receiver includes a finline ortho-mode transducer comprising thin tapered metallic fins deposited on a thin dielectric substrate to separate a vertically polarized electromagnetic mode from a horizontally polarized electromagnetic mode. Other embodiments are described and claimed. | 11-13-2008 |
20080315181 | Nanotube schottky diodes for high-frequency applications - Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz. | 12-25-2008 |
20090108183 | Device having an anti-reflection surface - Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus. | 04-30-2009 |
20100009495 | Anti-reflective device having an anti-reflective surface formed of silicon spikes with nano-tips - Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus. | 01-14-2010 |
20100039342 | INTEGRATED ULTRA THIN SCALABLE 94 GHz SI POWER SOURCE - In one embodiment, a slot array antenna comprising a quartz layer and a silicon layer, wherein the quartz and silicon layers are matched to suppress microwave modes, and a metal layer adjacent to the silicon layer comprising offset cuts. | 02-18-2010 |
20110057164 | CARBON NANOTUBE FIELD EMISSION DEVICE WITH OVERHANGING GATE - A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed. | 03-10-2011 |
20110174079 | CARBON NANOTUBE VACUUM GAUGES WITH WIDE-DYNAMIC RANGE AND PROCESSES THEREOF - A miniature thermal conductivity gauge employs a carbon single-walled-nanotube. The gauge operates on the principle of thermal exchange between the voltage-biased nanotube and the surrounding gas at low levels of power and low temperatures to measure vacuum across a wide dynamic range. The gauge includes two terminals, a source of constant voltage to the terminals, a single-walled carbon nanotube between the terminals, a calibration of measured conductance of the nanotube to magnitudes of surrounding vacuum and a current meter in electrical communication with the source of constant voltage. Employment of the nanotube for measuring vacuum includes calibrating the electrical conductance of the nanotube to magnitudes of vacuum, exposing the nanotube to a vacuum, applying a constant voltage across the nanotube, measuring the electrical conductance of the nanotube in the vacuum with the constant voltage applied and converting the measured electrical conductance to the corresponding calibrated magnitude of vacuum using the calibration. The nanotube may be suspended to minimize heat dissipation through the substrate, increasing sensitivity at even tower pressures. | 07-21-2011 |
20130247678 | Multi-Directional Environmental Sensors - Systems and methods in accordance with embodiments of the invention implement multi-directional environmental sensors. In one embodiment, a multi-directional environmental sensor includes: an inner conductive element that is substantially symmetrical about three orthogonal planes; an outer conductive element that is substantially symmetrical about three orthogonal planes; and a device that measures the electrical characteristics of the multi-directional environmental sensor, the device having a first terminal and a second terminal; where the inner conductive element is substantially enclosed within the outer conductive element; where the inner conductive element is electrically coupled to the first terminal of the device; and where the outer conductive element is electrically coupled to the second terminal of the device. | 09-26-2013 |
20130249598 | MICROSCALE DIGITAL VACUUM ELECTRONIC GATES - Systems and methods in accordance with embodiments of the invention implement microscale digital vacuum electronic gates. In one embodiment, a microscale digital vacuum electronic gate includes: a microscale field emitter that can emit electrons and that is a microscale cathode; and a microscale anode; where the microscale field emitter and the microscale anode are disposed within at least a partial vacuum; where the microscale field emitter and the microscale anode are separated by a gap; and where the potential difference between the microscale field emitter and the microscale anode is controllable such that the flow of electrons between the microscale field emitter and the microscale anode is thereby controllable; where when the microscale anode receives a flow of electrons, a first logic state is defined; and where when the microscale anode does not receive a flow of electrons, a second logic state is defined. | 09-26-2013 |
20130250479 | Micro- and Nanoscale Capacitors that Incorporate an Array of Conductive Elements Having Elongated Bodies - Systems and methods in accordance with embodiments of the invention implement micro- and nanoscale capacitors that incorporate a conductive element that conforms to the shape of an array elongated bodies. In one embodiment, a capacitor that incorporates a conductive element that conforms to the shape of an array of elongated bodies includes: a first conductive element that conforms to the shape of an array of elongated bodies; a second conductive element that conforms to the shape of an array of elongated bodies; and a dielectric material disposed in between the first conductive element and the second conductive element, and thereby physically separates them. | 09-26-2013 |
20130280830 | CARBON NANOTUBE FIELD EMISSION DEVICE WITH OVERHANGING GATE - A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed. | 10-24-2013 |
20130301113 | DEFORMABLE MIRRORS AND METHODS OF MAKING THE SAME - A deformable mirror is configured to be deformed by surface-parallel actuation. In one embodiment, the deformable mirror includes a first piezoelectric active layer on a first surface of a substrate. The first piezoelectric active layer has a substantially uniform thickness across the first surface of the substrate. The mirror also includes a first electrode layer on the first piezoelectric active layer. The first electrode layer has a plurality of electrodes arranged in a first pattern and has a substantially uniform thickness across the first piezoelectric active layer. The mirror may further include a second piezoelectric layer on the first electrode layer, and a second electrode layer on the second piezoelectric layer. The electrodes of the first and second electrode layers are configured to supply a voltage to the piezoelectric active layers upon actuation to thereby locally deform the shape of the mirror to correct for optical aberrations. | 11-14-2013 |
20130302633 | THIN FILM BI-MATERIAL LATTICE STRUCTURES AND METHODS OF MAKING THE SAME - A micro-scaled bi-material lattice structure includes a frame comprising a first material having a first coefficient of expansion and defining a plurality of unit cells. The bi-material lattice structure further includes a plurality of plates comprising a second material having a second coefficient of expansion different from the first coefficient of expansion. One of the plates is connected to each unit cell. The bi-material lattice structure has a third coefficient of expansion different from both the first coefficient of the expansion and the second coefficient of expansion, and the bi-material lattice structure has a thickness of about 100 nm to about 3000 microns. | 11-14-2013 |
20140141686 | SYSTEMS AND METHODS FOR FABRICATING CARBON NANOTUBE-BASED VACUUM ELECTRONIC DEVICES - Systems and methods in accordance with embodiments of the invention proficiently produce carbon nanotube-based vacuum electronic devices. In one embodiment a method of fabricating a carbon nanotube-based vacuum electronic device includes: growing carbon nanotubes onto a substrate to form a cathode; assembling a stack that includes the cathode, an anode, and a first layer that includes an alignment slot; disposing a microsphere partially into the alignment slot during the assembling of the stack such that the microsphere protrudes from the alignment slot and can thereby separate the first layer from an adjacent layer; and encasing the stack in a vacuum sealed container. | 05-22-2014 |
20140148074 | SYSTEMS AND METHODS FOR IMPLEMENTING ROBUST CARBON NANOTUBE-BASED FIELD EMITTERS - Systems and methods in accordance with embodiments of the invention implement carbon nanotube-based field emitters. In one embodiment, a method of fabricating a carbon nanotube field emitter includes: patterning a substrate with a catalyst, where the substrate has thereon disposed a diffusion barrier layer; growing a plurality of carbon nanotubes on at least a portion of the patterned catalyst; and heating the substrate to an extent where it begins to soften such that at least a portion of at least one carbon nanotube becomes enveloped by the softened substrate. | 05-29-2014 |