Patent application number | Description | Published |
20090061595 | METHOD FOR DIVIDING A SEMICONDUCTOR SUBSTRATE AND A METHOD FOR PRODUCING A SEMICONDUCTOR CIRCUIT ARRANGEMENT - A method for dividing a semiconductor substrate involves providing a semiconductor substrate. At least one separating trench is produced at a front side of the semiconductor substrate. A layer is produced at least at the bottom of the at least one separating trench. The semiconductor substrate is thinned at a rear side of the semiconductor substrate at least as far as the layer at the bottom of the at least one separating trench. The layer is severed in order to divide the semiconductor substrate into individual pieces. | 03-05-2009 |
20100078713 | SEMICONDUCTOR COMPONENT STRUCTURE WITH VERTICAL DIELECTRIC LAYERS - A method for producing a semiconductor structure and a semiconductor component are described. | 04-01-2010 |
20110101451 | SEMICONDUCTOR COMPONENT STRUCTURE WITH VERTICAL DIELECTRIC LAYERS - A semiconductor component having a semiconductor body having a first and a second side, an edge and an edge region adjacent to the edge in a lateral direction is described. | 05-05-2011 |
20110121437 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body. First semiconductor subzones of a second conductivity type different from the first conductivity type are formed within each of the first and second zones opposing each other along a lateral direction extending parallel to a surface of the semiconductor body. A second semiconductor subzone is formed within each of the first and second zones and between the first semiconductor subzones along the lateral direction. An average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone. | 05-26-2011 |
20110147817 | SEMICONDUCTOR COMPONENT HAVING AN OXIDE LAYER - Semiconductor component having an oxide layer. One embodiment includes a first semiconductor region and a second semiconductor region. An oxide layer is arranged between the first and second semiconductor region. The first semiconductor region and the oxide layer form a first semiconductor-oxide interface. The second semiconductor region and the oxide layer form a second semiconductor-oxide interface. The oxide layer has a chlorine concentration, the chlorine concentration having a first maximum in the region of the first semiconductor-oxide interface, and having a second maximum in the region of the second semiconductor-oxide interface. | 06-23-2011 |
20110309441 | INTEGRATED SEMICONDUCTOR DEVICE HAVING AN INSULATING STRUCTURE AND A MANUFACTURING METHOD - An integrated semiconductor device is provided. The integrated semiconductor device has a first semiconductor region of a second conductivity type, a second semiconductor region of a first conductivity type forming a pn-junction with the first semiconductor region, a non-monocrystalline semiconductor layer of the first conductivity type arranged on the second semiconductor region, a first well and at least one second well of the first conductivity type arranged on the non-monocrystalline semiconductor layer and an insulating structure insulating the first well from the at least one second well and the non-monocrystalline semiconductor layer. Further, a method for forming a semiconductor device is provided. | 12-22-2011 |
20120083081 | METHOD FOR PRODUCING A GATE ELECTRODE STRUCTURE - A transistor with a gate electrode structure is produced by providing a semiconductor body with a first surface, and with a first sacrificial layer extending in a vertical direction of the semiconductor body from the first surface. A first trench extending from the first surface into the semiconductor body is formed by removing the sacrificial layer in a section adjacent the first surface. A second trench is formed by isotropically etching the semiconductor body in the first trench. A third trench is formed below the second trench by removing at least a part of the first sacrificial layer below the second trench. A dielectric layer is formed which at least covers sidewalls of the third trench and which only covers sidewalls of the second trench. A gate electrode is formed on the dielectric layer in the second trench. The gate electrode and dielectric layer in the second trench form the gate electrode structure. | 04-05-2012 |
20120083085 | METHOD FOR PRODUCING AN ELECTRODE STRUCTURE - A method for producing a semiconductor device with an electrode structure includes providing a semiconductor body with a first surface, and with a first sacrificial layer extending in a vertical direction of the semiconductor body from the first surface, and forming a first trench extending from the first surface into the semiconductor body. The first trench is formed at least by removing the sacrificial layer in a section adjacent to the first surface. The method further includes forming a second trench by isotropically etching the semiconductor body in the first trench, forming a dielectric layer which covers sidewalls of the second trench, and forming an electrode on the dielectric layer in the second trench, the electrode and the dielectric layer in the second trench forming the electrode structure. | 04-05-2012 |
20120305993 | TRANSISTOR WITH CONTROLLABLE COMPENSATION REGIONS - A semiconductor device includes a gate terminal, at least one control terminal and first and second load terminals and at least one device cell. The at least one device cell includes a MOSFET device having a load path and a control terminal, the control terminal coupled to the gate terminal and a JFET device having a load path and a control terminal, the load path connected in series with the load path of the MOSFET device between the load terminals. The at least one device cell further includes a first coupling transistor having a load path and a control terminal, the load path coupled between the control terminal of the JFET device and one of the source terminal and the gate terminal, and the control terminal coupled to the at least one control terminal of the transistor device. | 12-06-2012 |
20130001674 | SEMICONDUCTOR DEVICE WITH VOLTAGE COMPENSATION STRUCTURE - A semiconductor device with a high voltage compensation component is manufactured by etching a trench into an epitaxial semiconductor material doped with n-type dopant atoms and p-type dopant atoms and disposing a first semiconductor or insulating material along one or more sidewalls of the trench. The first semiconductor or insulating material has a dopant diffusion constant which is at least 2× different for the n-type dopant atoms than the p-type dopant atoms. A second semiconductor material is disposed in the trench along the first semiconductor or insulating material. The second semiconductor material has a different dopant diffusion constant than the first semiconductor or insulating material. More n-type dopant atoms or p-type dopant atoms are diffused from the epitaxial semiconductor material through the first semiconductor or insulating material into the second semiconductor material than the other type of dopant atoms so that a lateral charge separation occurs between the second semiconductor material and the epitaxial semiconductor material. | 01-03-2013 |
20130005099 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC LAYER - A semiconductor device with a dielectric layer is produced by providing a semiconductor body with a first trench extending into the semiconductor body, the first trench having a bottom and a sidewall. A first dielectric layer is formed on the sidewall in a lower portion of the first trench and a first plug is formed in the lower portion of the first trench so as to cover the first dielectric layer. The first plug leaves an upper portion of the sidewall uncovered. A sacrificial layer is formed on the sidewall in the upper portion of the first trench and a second plug is formed in the upper portion of the first trench. The sacrificial layer is removed so as to form a second trench having sidewalls and a bottom. A second dielectric layer is formed in the second trench and extends to the first dielectric layer. | 01-03-2013 |
20130005101 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC LAYER - A method for producing a semiconductor device with a dielectric layer includes: providing a semiconductor body with a first trench extending into the semiconductor body, the first trench having a bottom and a sidewall; forming a first dielectric layer on the sidewall in a lower portion of the first trench; forming a first plug in the lower portion of the first trench so as to cover the first dielectric layer, the first plug leaving an upper portion of the sidewall uncovered; forming a sacrificial layer on the sidewall in the upper portion of the first trench; forming a second plug in the upper portion of the first trench; removing the sacrificial layer, so as to form a second trench having sidewalls and a bottom; and forming a second dielectric layer in the second trench and extending to the first dielectric layer. | 01-03-2013 |
20130075801 | SELF-ADJUSTED CAPACITIVE STRUCTURE - A method for producing a capacitive structure in a semiconductor body includes forming a first trench in a first surface of the semiconductor body, forming a first dielectric layer on sidewalls and the bottom of the first trench, forming a first electrode layer on the first dielectric layer, forming at least one second trench by removing at least one part of the first dielectric layer to form a first gap in the first surface, and by widening the first gap, forming a second dielectric layer on sidewalls and the bottom of the at least one second trench, and forming a second electrode layer on the second dielectric layer. | 03-28-2013 |
20130082322 | SEMICONDUCTOR DEVICE WITH SELF-CHARGING FIELD ELECTRODES - Disclosed is a semiconductor device including a drift region of a first doping type, a junction between the drift region and a device region, and at least one field electrode structure in the drift region. The field electrode structure includes a field electrode, a field electrode dielectric adjoining the field electrode and arranged between the field electrode and the drift region, and having an opening, at least one of a field stop region and a generation region. | 04-04-2013 |
20130154030 | Semiconductor Device with Self-Charging Field Electrodes and Compensation Regions - A semiconductor device includes a drift region of a first doping type, a junction between the drift region and a device region, a compensation region of a second doping type, and at least one field electrode structure arranged between the drift region and the compensation region. The at least one field electrode includes a field electrode and a field electrode dielectric adjoining the field electrode. The field electrode dielectric is arranged between the field electrode and the drift region and between the field electrode and the compensation. The field electrode dielectric includes a first opening through which the field electrode is coupled to drift region and a second opening through which the field electrode is coupled to the compensation region. | 06-20-2013 |
20130193525 | Semiconductor Arrangement with Active Drift Zone - A semiconductor device arrangement includes a first semiconductor device having a load path and a plurality of second semiconductor devices, each having a load path between a first and a second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each of the second semiconductor devices has its control terminal connected to the load terminal of one of the other second semiconductor devices, and one of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. Each of the second semiconductor devices has at least one device characteristic. At least one device characteristic of at least one of the second semiconductor devices is different from the corresponding device characteristic of others of the second semiconductor devices. | 08-01-2013 |
20130214395 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body. First semiconductor subzones of a second conductivity type different from the first conductivity type are formed within each of the first and second zones opposing each other along a lateral direction extending parallel to a surface of the semiconductor body. A second semiconductor subzone is formed within each of the first and second zones and between the first semiconductor subzones along the lateral direction. An average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone. | 08-22-2013 |
20130234761 | Charge Compensation Semiconductor Device - A semiconductor device includes a semiconductor body and a source metallization arranged on a first surface of the body. The body includes: a first semiconductor layer including a compensation-structure; a second semiconductor layer adjoining the first layer, comprised of semiconductor material of a first conductivity type and having a doping charge per horizontal area lower than a breakdown charge per area of the semiconductor material; a third semiconductor layer of the first conductivity type adjoining the second layer and comprising at least one of a self-charging charge trap, a floating field plate and a semiconductor region of a second conductivity type forming a pn-junction with the third layer; and a fourth semiconductor layer of the first conductivity type adjoining the third layer and having a maximum doping concentration higher than that of the third layer. The first semiconductor layer is arranged between the first surface and the second semiconductor layer. | 09-12-2013 |
20130307058 | Semiconductor Devices Including Superjunction Structure and Method of Manufacturing - A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A superjunction structure in the semiconductor body includes drift regions of a first conductivity type and compensation structures alternately disposed in a first direction parallel to the first surface. Each of the charge compensation structures includes a first semiconductor region of a second conductivity type complementary to the first conductivity type and a first trench including a second semiconductor region of the second conductivity type adjoining the first semiconductor region. The first semiconductor region and the first trench are disposed one after another in a second direction perpendicular to the first surface. | 11-21-2013 |
20130313632 | Semiconductor Device with Voltage Compensation Structure - A voltage compensation structure includes a first semiconductor or insulating material disposed along one or more sidewalls of a trench formed in a doped epitaxial semiconductor material. The first semiconductor or insulating material has a dopant diffusion constant which is at least 2× different for n-type dopant atoms than p-type dopant atoms. The voltage compensation structure further includes a doped second semiconductor material disposed in the trench so that the first semiconductor or insulating material is interposed between the doped second semiconductor material and the doped epitaxial semiconductor material. The doped second semiconductor material has a different dopant diffusion constant than the first semiconductor or insulating material so that a lateral charge separation occurs between the doped second semiconductor material and the doped epitaxial semiconductor material. | 11-28-2013 |
20140001552 | Super Junction Semiconductor Device Comprising a Cell Area and an Edge Area | 01-02-2014 |
20140117437 | Super Junction Semiconductor Device Comprising a Cell Area and an Edge Area - A super junction semiconductor device may include one or more doped zones in a cell area. A drift layer is provided between a doped layer of a first conductivity type and the one or more doped zones. The drift layer includes first regions of the first conductivity type and second regions of a second conductivity type, which is the opposite of the first conductivity type. In an edge area that surrounds the cell area, the first regions may include first portions separating the second regions in a first direction and second portions separating the second regions in a second direction orthogonal to the first direction. The first and second portions are arranged such that a longest second region in the edge area is at most half as long as a dimension of the edge area parallel to the longest second region. | 05-01-2014 |
20140183621 | Charge Compensation Semiconductor Device - A semiconductor device has a source metallization, drain metallization, and semiconductor body. The semiconductor body includes a drift layer of a first conductivity contacted with the drain metallization, a buffer (and field-stop) layer of the first conductivity higher in maximum doping concentration than the drift layer, and a plurality of compensation regions of a second conductivity, each forming a pn-junction with the drift and buffer layers and in contact with the source metallization. Each compensation region includes a first portion between a second portion and the source metallization. The first portions and the drift layer form a first area having a vanishing net doping. The second portions and the buffer layer form a second area of the first conductivity. A space charge region forms in the second area when a reverse voltage of more than 30% of the device breakdown voltage is applied between the drain and source metallizations. | 07-03-2014 |
20140246697 | Semiconductor Device with Charge Compensation Structure - A semiconductor device is provided. The semiconductor device includes a semiconductor body having a main surface. In a vertical cross-section which is substantially orthogonal to the main surface the semiconductor body includes a vertical trench, an n-type silicon semiconductor region, and two p-type silicon semiconductor regions each of which adjoins the n-type silicon semiconductor region and is arranged between the n-type silicon semiconductor region and the main surface. The vertical trench extends from the main surface at least partially into the n-type silicon semiconductor region and includes a compound semiconductor region which includes silicon and germanium and is arranged between the two p-type silicon semiconductor regions. The compound semiconductor region and the two p-type silicon semiconductor regions include n-type dopants and p-type dopants. An integrated concentration of the n-type dopants of the compound semiconductor region is larger than an integrated concentration of the p-type dopants of the compound semiconductor region. | 09-04-2014 |
20140264577 | Adjustable Transistor Device - A transistor device includes at least one first type transistor cell including a drift region, a source region, a body region arranged between the source region and the drift region, a drain region, a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. A gate terminal is coupled to the gate electrode, a source terminal is coupled to the source region, and a control terminal is configured to receive a control signal. A variable resistor is connected between the field electrode and the gate terminal or the source terminal. The variable resistor includes a variable resistance configured to be adjusted by the control signal received at the control terminal. | 09-18-2014 |
20140284774 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body. First semiconductor subzones of a second conductivity type different from the first conductivity type are formed within each of the first and second zones opposing each other along a lateral direction extending parallel to a surface of the semiconductor body. A second semiconductor subzone is formed within each of the first and second zones and between the first semiconductor subzones along the lateral direction. An average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone. | 09-25-2014 |
20140287560 | INTEGRATED SEMICONDUCTOR DEVICE HAVING AN INSULATING STRUCTURE AND A MANUFACTURING METHOD - An integrated semiconductor device is provided. The integrated semiconductor device has a first semiconductor region of a second conductivity type, a second semiconductor region of a first conductivity type forming a pn-junction with the first semiconductor region, a non-monocrystalline semiconductor layer of the first conductivity type arranged on the second semiconductor region, a first well and at least one second well of the first conductivity type arranged on the non-monocrystalline semiconductor layer and an insulating structure insulating the first well from the at least one second well and the non-monocrystalline semiconductor layer. Further, a method for forming a semiconductor device is provided. | 09-25-2014 |
20140327069 | Semiconductor Device with a Super Junction Structure Based On a Compensation Structure with Compensation Layers and Having a Compensation Rate Gradient - A super junction structure is formed in a semiconductor portion of a super junction semiconductor device. The super junction structure includes a compensation structure with a first compensation layer of a first conductivity type and a second compensation layer of a complementary second conductivity type. The compensation structure lines at least sidewall portions of compensation trenches that extend between semiconductor mesas along a vertical direction perpendicular to a first surface of the semiconductor portion. Within the super junction structure and a pedestal layer that may adjoin the super junction structure, a sign of a lateral compensation rate changes along the vertical direction resulting in a local peak of a vertical electric field gradient and to improved avalanche ruggedness. | 11-06-2014 |
20140327070 | Super Junction Structure Semiconductor Device Based on a Compensation Structure Including Compensation Layers and a Fill Structure - A super junction semiconductor device includes strip structures between mesa regions that protrude from a base section in a cell area. Each strip structure includes a compensation structure with a first and a second section inversely provided on opposing sides of a fill structure. Each section includes a first compensation layer of a first conductivity type and a second compensation layer of a complementary second conductivity type. The strip structures extend into an edge area surrounding the cell area. In the edge area the strip structures include end sections. The end sections may be modified to enhance break down voltage characteristics, avalanche ruggedness and commutation behavior. | 11-06-2014 |
20140332931 | Compensation Devices - Methods, apparatuses and devices related to the manufacturing of compensation devices are provided. In some cases, an n/p-codoped layer is deposited for calibration purposes to minimize a net doping concentration. In other cases, alternatingly n- and p-doped layers are then deposited. In other embodiments, an n/p-codoped layer is deposited in a trench where n- and p-dopants have different diffusion behavior. To obtain different doping profiles, a heat treatment may be performed. | 11-13-2014 |
20140346589 | Semiconductor Device with Charge Compensation - A semiconductor device includes a semiconductor body and a source metallization arranged on a first surface of the body. The body includes: a first semiconductor layer including a compensation-structure; a second semiconductor layer adjoining the first layer, comprised of semiconductor material of a first conductivity type and having a doping charge per horizontal area lower than a breakdown charge per area of the semiconductor material; a third semiconductor layer of the first conductivity type adjoining the second layer and comprising at least one of a self-charging charge trap, a floating field plate and a semiconductor region of a second conductivity type forming a pn-junction with the third layer; and a fourth semiconductor layer of the first conductivity type adjoining the third layer and having a maximum doping concentration higher than that of the third layer. The first semiconductor layer is arranged between the first surface and the second semiconductor layer. | 11-27-2014 |
20140374842 | Semiconductor Device with Self-Charging Field Electrodes - A semiconductor device includes a drift region of a first doping type, a junction between the drift region and a device region, and a field electrode structure in the drift region. The field electrode structure includes a field electrode, a field electrode dielectric adjoining the field electrode, arranged between the field electrode and the drift region, and having an opening, and at least one of a field stop region and a generation region. The semiconductor device further includes a coupling region of a second doping type complementary to the first doping type. The coupling region is electrically coupled to the device region and coupled to the field electrode. | 12-25-2014 |
20140374882 | Semiconductor Device with Recombination Centers and Method of Manufacturing - A semiconductor device includes a semiconductor portion with one or more impurity zones of the same conductivity type. A first electrode structure is electrically connected to the one or more impurity zones in a cell area of the semiconductor portion. At least in an edge area surrounding the cell area a recombination center density in the semiconductor portion is higher than in an active portion of the cell area. | 12-25-2014 |
20150035002 | Super Junction Semiconductor Device and Manufacturing Method - A method for manufacturing a super junction semiconductor device includes forming a trench in an n-doped semiconductor body and forming a first p-doped semiconductor layer lining sidewalls and a bottom side of the trench. The method further includes removing a part of the first p-doped semiconductor layer at the sidewalls and at the bottom side of the trench by electrochemical etching, and filling the trench. | 02-05-2015 |
20150035048 | A SUPPER JUNCTION STRUCTURE INCLUDES A THICKNESS OF FIRST AND SECOND SEMICONDUCTOR REGIONS GRADUALLY CHANGED FROM A TRANSISTOR AREA INTO A TERMINATION AREA - A super junction semiconductor device includes a super junction structure including first and second areas alternately arranged along a first lateral direction and extending in parallel along a second lateral direction. Each one of the first areas includes a first semiconductor region of a first conductivity type. Each one of the second areas includes, along the first lateral direction, an inner area between opposite second semiconductor regions of a second conductivity type opposite to the first conductivity type. A width w | 02-05-2015 |
20150041915 | Semiconductor Arrangement with Active Drift Zone - A semiconductor device arrangement includes a first semiconductor device having a load path and a plurality of second semiconductor devices, each having a load path between a first and a second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each of the second semiconductor devices has its control terminal connected to the load terminal of one of the other second semiconductor devices, and one of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. Each of the second semiconductor devices has at least one device characteristic. At least one device characteristic of at least one of the second semiconductor devices is different from the corresponding device characteristic of others of the second semiconductor devices. | 02-12-2015 |
20150084120 | Charge-Compensation Semiconductor Device - An active area of a semiconductor body includes a first charge-compensation structure having spaced apart n-type pillar regions, and an n-type first field-stop region of a semiconductor material in Ohmic contact with a drain metallization and the n-type pillar regions and having a doping charge per area higher than a breakdown charge per area of the semiconductor material. A punch-through area of the semiconductor body includes a p-type semiconductor region in Ohmic contact with a source metallization, a floating p-type body region and an n-type second field-stop region. The floating p-type body region extends into the active area. The second field-stop region is in Ohmic contact with the first field-stop region, forms a pn-junction with the floating p-type body region, is arranged between the p-type semiconductor region and floating p-type body region, and has a doping charge per area lower than the breakdown charge per area of the semiconductor material. | 03-26-2015 |