Patent application number | Description | Published |
20110026174 | Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same - An electrostatic discharge (ESD) protection element is described, the ESD protection element including a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type. | 02-03-2011 |
20110199146 | High-Frequency Switching Circuit - A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit. | 08-18-2011 |
20110201281 | High Frequency Switching Circuit and Method for Determining a Power of a High Frequency Signal - A high frequency switching circuit, including a high frequency switching element. The high frequency switching element including a first channel terminal and a second channel terminal, wherein the high frequency switching element is configured to switchably route a high frequency signal via a channel path between the first channel terminal and the second channel terminal. The high frequency switching circuit further includes a power detection circuit, wherein the power detection circuit is configured to obtain a first measurement signal from the first channel terminal and a second measurement signal from the second channel terminal, and to combine the first measurement signal and the second measurement signal to derive, in dependence on both the first measurement signal and the second measurement signal, a power signal describing a power value of the high frequency signal routed via the channel path of the high frequency switching element. | 08-18-2011 |
20120319137 | Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same - An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type. | 12-20-2012 |
20130278323 | High-Frequency Switching Circuit - A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit. | 10-24-2013 |
20140001491 | Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same | 01-02-2014 |
20140015593 | RF Switch, Mobile Communication Device and Method for Switching an RF Signal - An RF switch includes a switchable RF transistor. The switchable RF transistor includes a stripe of a plurality of adjacent RF transistor fingers and at least one non-switchable dummy transistor that is arranged at an end of the stripe of the switchable RF transistor. | 01-16-2014 |
20140070872 | RF Switch Circuit, RF Switch and Method for Switching RF Signals - An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit. Furthermore, the RF switch circuit includes a control circuit configured to conductively couple, in a high impedance state of the RF switch circuit, the first terminal of the RF switch circuit to a control terminal of a first transistor in a series of the series connection of the plurality of transistors. The second terminal of the RF switch circuit is conductively coupled to a control terminal of a last transistor in the series of the series connection of the plurality of transistors. | 03-13-2014 |