Patent application number | Description | Published |
20080212170 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; | 09-04-2008 |
20080278699 | Method For Distortion Correction In A Microlithographic Projection Exposure Apparatus - For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens. | 11-13-2008 |
20080285121 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane;
| 11-20-2008 |
20080297889 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane;
| 12-04-2008 |
20080310014 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; | 12-18-2008 |
20080315134 | OPTICAL SYSTEM FOR RADIATION IN THE EUV-WAVELENGTH RANGE AND METHOD FOR MEASURING A CONTAMINATION STATUS OF EUV-REFLECTIVE ELEMENTS - An optical system for radiation in the EUV wavelength range, in particular a projection exposure apparatus, having at least one vacuum vessel, including: at least one EUV-reflective optical element arranged in an optical path, and a holder which includes at least one sample element, the sample element having an optical surface which is exposed to incident EUV-radiation outside of the optical path, the sample element being sensitive to chemical alterations under influence of the incident EUV-radiation which also affect the optical element. The optical system further includes at least one detection unit for online detection of the contamination status of the sample element during exposure of the sample element to the incident EUV-radiation. | 12-25-2008 |
20090015951 | PROJECTION OBJECTIVE AND METHOD FOR ITS MANUFACTURE - A method of manufacturing a projection objective ( | 01-15-2009 |
20090021713 | ILLUMINATION SYSTEM AND MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS INCLUDING SAME - The disclosure relates an illumination system configured to guide illumination light from a radiation source to an object plane and to provide defined illumination of an object field in the object plane, wherein illumination light is supplied to the object field by a bundle-guiding optical pupil component which is disposed in a pupil plane of the projection objective, and wherein at least another bundle-guiding component is disposed upstream of the pupil component in the beam path of the illumination light. The disclosure further concerns a projection exposure apparatus that includes such an illumination system of this type, a method of fabricating a microstructured component using such a projection exposure apparatus, and a microstructured component fabricated using such a method. | 01-22-2009 |
20090021714 | COMBINATION STOP FOR CATOPTRIC PROJECTION ARRANGEMENT - The disclosure relates to an optical projection arrangement that can be used to image a reticle onto a substrate. The projection arrangement includes reflective elements, by which a ray path is defined. A combination stop is in a pupil of the ray path. The combination stop has a first opening (aperture opening) for use as an aperture stop. The combination stop also has a second opening for allowing passage of a ray bundle of the ray path, such that the combination stop acts as a combined aperture stop and stray light stop. In addition, the disclosure relates to a corresponding combination stop for optical arrangements, as well as related systems, components and methods. | 01-22-2009 |
20090027644 | PROJECTION OBJECTIVE - The disclosure relates a projection objective for imaging an object field in an object plane into an image field in an image plane. The disclosure also relates to a microlithographic projection exposure apparatus including such a projection objective. The disclosure further relates to methods of using such a projection exposure apparatus to fabricate microstructured or nanostructured components, such as highly integrated semiconductor components. In addition, the disclosure relates to components fabricated by such methods. | 01-29-2009 |
20090046357 | CATOPTRIC OBJECTIVES AND SYSTEMS USING CATOPTRIC OBJECTIVES - In general, in a first aspect, the invention features a system that includes a microlithography projection optical system. The microlithography projection optical system includes a plurality of elements arranged so that during operation the plurality of elements image radiation at a wavelength λ from an object plane to an image plane. At least one of the elements is a reflective element that has a rotationally-asymmetric surface positioned in a path of the radiation. The rotationally-asymmetric surface deviates from a rotationally-symmetric reference surface by a distance of about λ or more at one or more locations of the rotationally-asymmetric surface. | 02-19-2009 |
20090051890 | MICROLITHOGRAPHY PROJECTION OPTICAL SYSTEM, TOOL AND METHOD OF PRODUCTION - A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength λ from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3° or more with respect to the normal to the object plane. This can allow the use of face shifting masks as objects to be imaged, in particular for EUV wavelengths. | 02-26-2009 |
20090052073 | MICROLITHOGRAPHY PROJECTION OPTICAL SYSTEM AND METHOD FOR MANUFACTURING A DEVICE - In some embodiments, a catoptric microlithgraphy projection optical system includes a plurality of reflective optical elements arranged to image radiation from an object field in an object plane to an image field in an image plane. The image field can have a size of at least 1 mm×1 mm. This optical system can have an object-image shift (OIS) of about 75 mm or less. Metrology and testing can be easily implemented despite rotations of the optical system about a rotation axis. Such a catoptric microlithgraphy projection optical system can be implemented in a microlithography tool. Such a microlithography tool can be used to produce microstructured components. | 02-26-2009 |
20090073392 | Illumination System Including Grazing Incidence Mirror For Microlithography Exposure System - In general, in one aspect, the invention features a system that includes a catoptric projection objective having an optical axis and including a plurality of projection objective elements positioned between an object plane and an image plane, the object and image planes being orthogonal to the optical axis, the projection objective being configured so that during operation the projection objective directs radiation reflected at the object plane to the image plane to form an image at the image plane of an object positioned in a field at the object plane, the field having a first dimension of 8 mm or more and a second dimension of 8 mm or more, the first and second dimensions being along orthogonal directions. The system also includes an illumination system including a plurality of illumination system elements, the illumination system being configured so that during operation the illumination system directs the radiation to the field at the object plane, where a chief ray of the radiation has an angle of incidence of 10° or less at the object plane. | 03-19-2009 |
20090073398 | MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification. | 03-19-2009 |
20090073410 | ILLUMINATION SYSTEM PARTICULARLY FOR MICROLITHOGRAPHY - There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength ≦193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis. | 03-19-2009 |
20090079952 | SIX-MIRROR EUV PROJECTION SYSTEM WITH LOW INCIDENCE ANGLES - The invention relates to a projection system for guiding light with wavelengths ≦193 nm from an object plane to an image plane, comprising at least a first mirror (M | 03-26-2009 |
20090190208 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter D | 07-30-2009 |
20090213345 | Microlithography exposure apparatus using polarized light and microlithography projection system having concave primary and secondary mirrors - The present invention relates to a microlithography projection exposure apparatus for wavelengths ≦100 nm, in particular for EUV lithography using wavelengths <50 nm, preferably <20 nm having an illumination system which illuminates a field in an object plane using light of a defined polarization state and an objective which projects the field in the object plane into an image plane, the polarized light passing through the objective from the object plane to the image plane. | 08-27-2009 |
20090262443 | CATOPTRIC OBJECTIVES AND SYSTEMS USING CATOPTRIC OBJECTIVES - In general, in a first aspect, the invention features a system that includes a microlithography projection optical system. The microlithography projection optical system includes a plurality of elements arranged so that during operation the plurality of elements image radiation at a wavelength λ from an object plane to an image plane. At least one of the elements is a reflective element that has a rotationally-asymmetric surface positioned in a path of the radiation. The rotationally-asymmetric surface deviates from a rotationally-symmetric reference surface by a distance of about λ or more at one or more locations of the rotationally-asymmetric surface. | 10-22-2009 |
20090268189 | MASKS, LITHOGRAPHY DEVICE AND SEMICONDUCTOR COMPONENT - One problem of projection optics concerns pupil apodization which leads to imaging defects. As here proposed, the illumination system is configured to illuminate the mask inhomogeneously. As a result, inhomogeneities in reflectivity caused by the mask itself are at least partly counteracted. This compensation not only makes the apodization over the pupil become more symmetric but also makes the intensity variation smaller overall. | 10-29-2009 |
20090316128 | ILLUMINATION SYSTEM PARTICULARLY FOR MICROLITHOGRAPHY - There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength≦193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis. | 12-24-2009 |
20100014153 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter D | 01-21-2010 |
20100033696 | METHOD AND APPARATUS FOR PRODUCING AN ELEMENT HAVING AT LEAST ONE FREEFORM SURFACE HAVING A HIGH ACCURACY OF FORM AND A LOW SURFACE ROUGHNESS - A method for producing an element having at least one arbitrarily freely formed surface (freeform surface) having a high accuracy of form and a low surface roughness. The freeform surface is obtained by at least one first processing step with a shaping material processing method in which at least an approximation to the desired freeform surface (target form) is effected, and at least one second step with a material processing method that smooths the surface, wherein at least during the second processing step of the smoothing material processing, the element ( | 02-11-2010 |
20100134880 | PROJECTION OBJECTIVE - The disclosure relates to a projection objective for imaging an object field in an object plane having a field aspect ration (x/y) of at least 1.5 into an image field in an image plane. In general, the projection objective has at least two optically effective surfaces for guiding imaging light in a beam path between the object field and the image field. The projection objective can take up an installed space having a cuboid envelope that is spanned by a length dimension and two transverse dimensions. | 06-03-2010 |
20100134907 | MICROLITHOGRAPHY PROJECTION OPTICAL SYSTEM AND METHOD FOR MANUFACTURING A DEVICE - In some embodiments, a catoptric microlithgraphy projection optical system includes a plurality of reflective optical elements arranged to image radiation from an object field in an object plane to an image field in an image plane. The image field can have a size of at least 1 mm×1 mm. This optical system can have an object-image shift (OIS) of about 75 mm or less. Metrology and testing can be easily implemented despite rotations of the optical system about a rotation axis. Such a catoptric microlithgraphy projection optical system can be implemented in a microlithography tool. Such a microlithography tool can be used to produce microstructured components. | 06-03-2010 |
20100142042 | MICROSCOPE AND MICROSCOPY METHOD FOR SPACE-RESOLVED MEASUREMENT OF A PREDETERMINED STRUCTURE, IN PARTICULAR A STRUCTURE OF A LITHOGRAPHIC MASK - A microscope is provided for space-resolved measurement of a predetermined structure ( | 06-10-2010 |
20100149517 | PROJECTION OBJECTIVE AND METHOD FOR ITS MANUFACTURE - A method of manufacturing a projection objective ( | 06-17-2010 |
20100149632 | Optical imaging device and imaging method for microscopy - The present invention relates to an optical imaging device, in particular for microscopy, with a first optical element group and a second optical element group, wherein the first optical element group and the second optical element group, on an image plane, form an image of an object point of an object plane via at least one imaging ray having an imaging ray path. The first optical element group comprises a first optical element with a reflective first optical surface in the imaging ray path and a second optical element with a reflective second optical surface in the imaging ray path, wherein the first optical surface is concave. The second optical element group comprises a third optical element with a concave reflective third optical surface in the imaging ray path and a fourth optical element with a convex reflective fourth optical surface in the imaging ray path without light passage aperture. | 06-17-2010 |
20100195075 | PROJECTION OBJECTIVE HAVING MIRROR ELEMENTS WITH REFLECTIVE COATINGS - An optical system is disclosed that includes a plurality of elements arranged to image radiation at a wavelength λ from an object field in an object surface to an image field in an image surface. The elements include mirror elements having a reflective surface formed by a reflective coating positioned at a path of radiation. At least one of the mirror elements has a rotationally asymmetrical reflective surface deviating from a best-fit rotationally symmetric reflective surface by about λ or more at one or more locations. The elements include an apodization correction element effective to correct a spatial intensity distribution in an exit pupil of the optical system relative to the optical system without the apodization correcting element. The apodization correction element can be effective to increase symmetry of the spatial intensity distribution in the exit pupil relative to the optical system without the apodization correcting element. | 08-05-2010 |
20100208225 | PROJECTION OBJECTIVE FOR MICRLOLITHOGRAPHY HAVING AN OBSCURATED PUPIL - A projection objective with obscurated pupil for microlithography has a first optical surface, which has a first region provided for application of useful light, and at least one second optical surface, which has a second region provided for application of useful light. A beam envelope of the useful light extends between the first region and the second region. At least one tube open on the input side and on the output side in the light propagation direction severs to screen scattered light. The at least one tube is between the first optical surface and the second optical surface. The wall of the tube is opaque in the wavelength range of the useful light. The tube extends in the propagation direction of the useful light over at least a partial length of the beam envelope and circumferentially surrounds the beam envelope. | 08-19-2010 |
20100231884 | IMAGING OPTICAL SYSTEM AND RELATED INSTALLATION AND METHOD - An imaging optical system can image two object fields, each in the same object plane, into two corresponding image fields, each in the same image plane. The two object fields are spatially separated from each another, and the two image fields are spatially separated from each other. The imaging optical system can exhibit increased flexibility of use. | 09-16-2010 |
20100231885 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE SYSTEM FOR MICROLITHOGRAPHY - An imaging optical system includes a plurality of mirrors that image an object field in an object plane into an image field in an image plane. At least one of the mirrors is obscured, and thus has a opening for imaging light to pass through. The fourth-last mirror in the light path before the image field is not obscured and provides, with an outer edge of the optically effective reflection surface thereof, a central shadowing in a pupil plane of the imaging optical system. The distance between the fourth-last mirror and the last mirror along the optical axis is at least 10% of the distance between the object field and the image field. An intermediate image, which is closest to the image plane, is arranged between the last mirror and the image plane. The imaging optical system can have a numerical aperture of 0.9. These measures, not all of which must be effected simultaneously, lead to an imaging optical system with improved imaging properties and/or reduced production costs. | 09-16-2010 |
20100231886 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY INCLUDING AN IMAGING OPTICAL SYSTEM - In certain aspects, imaging optical systems with a plurality of mirrors image an object field in an object plane into an image field in an image plane. In the light path between non-obscured mirrors, imaging rays pass through at least one multiple pass-through region between spaced-apart planes which are arranged parallel to the object plane and/or parallel to the image plane. The imaging optical systems have at least one pupil plane. The pupil plane is arranged outside the multiple pass-through region between the non-obscured mirrors. This can provide an imaging optical system which provides for an easier correction of image errors | 09-16-2010 |
20100253999 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface. The system has potential for very high numerical apertures at moderate lens material mass consumption. | 10-07-2010 |
20100265481 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE INSTALLATION - An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm. | 10-21-2010 |
20100265572 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter D | 10-21-2010 |
20110026003 | PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY - A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (d | 02-03-2011 |
20110063596 | PROJECTION OBJECTIVE AND PROJECTION EXPOSURE APPARATUS WITH NEGATIVE BACK FOCUS OF THE ENTRY PUPIL - The disclosure concerns a projection objective, which can include an object plane in which an object field is formed, an entry pupil, a mirrored entry pupil (RE) in a mirrored entry pupil plane obtained by mirroring the entry pupil (VE) at the object plane, an image plane, an optical axis, at least a first mirror and a second mirror. The projection objective can have a negative back focus of the entry pupil, and a principal ray originating from a central point of the object field and traversing the objective from the object plane to the image plane can intersect the optical axis in at least one point of intersection, wherein the geometric locations of all points of intersection lie between the image plane and the mirrored entry pupil plane. | 03-17-2011 |
20110085179 | APPARATUS FOR MICROLITHOGRAPHIC PROJECTION EXPOSURE AND APPARATUS FOR INSPECTING A SURFACE OF A SUBSTRATE - An apparatus ( | 04-14-2011 |
20110090559 | PROJECTION OBJECTIVE FOR A MICROLITHOGRAPHIC EUV PROJECTION EXPOSURE APPARATUS - A projection objective for a microlithographic EUV projection exposure apparatus includes a first mirror and a second mirror. The first mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The second mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The first and second mirrors are configured so that, with otherwise equal irradiation by EUV light, the mirror substrate of the first mirror compacts less than the mirror substrate of the second mirror under the effect of the EUV light. | 04-21-2011 |
20110122384 | IMAGING OPTICS - An imaging optics has a plurality of mirrors to image an object field in an object plane into an image field in an image plane. At least one of the mirrors has a through opening for the passage of imaging light. An arrangement of the mirrors is such that principal rays run parallel or divergently in the beam path of the imaging light between the object plane and the first downstream mirror. The imaging optics can have an entrance pupil plane that lies in the beam path of the imaging light in the range of between 5 m and 2000 m in front of the object plane. The imaging optics can have an entrance pupil plane that lies in the beam path of the imaging light in the range of between 100 mm and 5000 mm in front of the object plane. Imaging optics with improved imaging quality are provided. | 05-26-2011 |
20110157572 | PROJECTION OPTICS FOR MICROLITHOGRAPHY - A projection optics for microlithography, which images an object field in an object plane into an image field in an image plane, where the projection optics include at least one curved mirror and including at least one refractive subunit, as well as related systems, components, methods and products prepared by such methods, are disclosed. | 06-30-2011 |
20110165522 | IMAGING OPTICAL SYSTEM - An imaging optical system includes a plurality of mirrors configured to image an object field in an object plane of the imaging optical system into an image field in an image plane of the imaging optical system. An illumination system includes such an imaging optical system. The transmission losses of the illumination system are relatively low. | 07-07-2011 |
20110199599 | SIX-MIRROR EUV PROJECTION SYSTEM WITH LOW INCIDENCE ANGLES - The invention relates to a projection system for guiding light with wavelengths ≦193 nm from an object plane to an image plane, comprising at least a first mirror, a second mirror, a third mirror, a fourth mirror, a fifth mirror and a sixth mirror centered around an optical axis and being arranged along the optical axis, with the light traveling from the object plane to the first mirror, then from the first mirror to the second mirror, then from the second mirror to the third mirror, then from the third mirror, the fourth mirror, then from the fourth mirror to the fifth mirror and then from the fifth mirror to the sixth mirror, The invention is characterized in that the first mirror is arranged along the optical axis geometrically between the fifth mirror and the sixth mirror, and the third mirror is a convex mirror. | 08-18-2011 |
20110200946 | MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS HAVING AT LEAST TWO OPERATING STATES - A microlithography projection exposure apparatus for producing microelectronic components has at least two operating states. The microlithography projection exposure apparatus includes a reflective mask in an object plane. In the first operating state, a first partial region of the mask is illuminated by a first radiation, which has an assigned first centroid direction having a first centroid direction vector at each point of the first partial region. In the second operating state, a second partial region of the mask is illuminated by a second radiation, which has an assigned second centroid direction having a second centroid direction vector at each point of the second partial region. The first and the second partial region have a common overlap region. Furthermore, the microlithography projection exposure apparatus can be configured in such a way that at each point of at least one partial region of the overlap region the scalar triple product of the normalized first centroid direction vector, the normalized second centroid direction vector and a normalized vector that is perpendicular to the mask is less than 0.05. | 08-18-2011 |
20110211252 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter D | 09-01-2011 |
20110228237 | REFLECTIVE OPTICAL ELEMENT AND EUV LITHOGRAPHY APPLIANCE - A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d | 09-22-2011 |
20110228244 | ILLUMINATION OPTICAL SYSTEM FOR PROJECTION LITHOGRAPHY - An illumination optical system for projection lithography for the illumination of an illumination field has a facet mirror. An optical system, which follows the illumination optical system, has an object field which can be arranged in the illumination field of the illuminate optical system. The facet mirror has a plurality of facets to reflectively guide part bundles of a bundle of illumination light. Reflection faces of the facets are tiltable in each case. In a first illumination tilt position, the tiltable facets guide the part bundle impinging on them along a first object field illumination channel to the illumination field. In a different illumination tilt position, the tiltable facets guide the part bundle impinging on them along a different object field illumination channel to the illumination field. The reflection faces of the tiltable facets are configured so that the part bundle in the at least two illumination tilt positions is reflected with a degree of reflection R coinciding within a tolerance range of +/−10%. The result is an illumination optical system which avoids an undesired influence of the illumination tilt position of the tiltable facets on the illumination light throughput of the illumination optical system. | 09-22-2011 |
20110228245 | REFLECTIVE OPTICAL ELEMENT, PROJECTION SYSTEM, AND PROJECTION EXPOSURE APPARATUS - For the use in illumination systems and projection exposure apparatuses for UV or EUV lithography, a reflective optical element is provided for a operating wavelength in the ultraviolet to extreme ultraviolet wavelength ranges. The reflective optical element includes a substrate and a reflective surface on the substrate. The multilayer system has layers of at least two alternating materials having different real parts of the refractive index at the operating wavelength. Radiation in the operating wavelength of a certain incident angle bandwidth distribution can impinge on the reflective optical element. The reflective surface includes one or more first portions, in which the layers have alternating materials of a first period thickness. The reflective surface includes one or more additional portions, in which the layers of alternating materials have a first period thickness and at least one additional period thickness. The arrangement of the first and additional portions (A | 09-22-2011 |
20110235167 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface. The system has potential for very high numerical apertures at moderate lens material mass consumption. | 09-29-2011 |
20110261338 | MICROLITHOGRAPHY PROJECTION SYSTEM WITH AN ACCESSIBLE DIAPHRAGM OR APERTURE STOP - The invention relates to a microlithography projection lens for wavelengths <=248 nm <=, preferably <=193 mm, in particular EUV lithography for wavelengths ranging from 1-30 nm for imaging an object field in an object plane onto an image field in an image plane, the microlithography projection lens developed in such a manner that provision is made for an accessible diaphragm plane, into which for instance an iris diaphragm can be introduced. | 10-27-2011 |
20110261444 | Catadioptric Projection Objective With Mirror Group - A catadioptric projection objective for imaging an off-axis object field arranged in an object surface of the projection objective onto an off-axis image field arranged in an image surface of the projection objective has a front lens group, a mirror group comprising four mirrors and having an object side mirror group entry, an image side mirror group exit, and a mirror group plane aligned transversly to the optical axis and arranged geometrically between the mirror group entry and the mirror group exit; and a rear lens group. The mirrors of the mirror group are arranged such that at least one intermediate image is positioned inside the mirror group between mirror group entry and mirror group exit, and that radiation coming from the mirror group entry passes at least four times through the mirror group plane and is reflected at least twice on a concave mirror surface of the mirror group prior to exiting the mirror group at the mirror group exit. The mirror group entry is positioned in a region where radiation exiting the front lens group has an entry chief ray height. A second reflecting area is positioned in a region where radiation impinging on the second mirror has a second chief ray height deviating from the entry chief ray height in a first direction; and a fourth reflecting area is positioned in a region where radiation impinging on the fourth mirror has a fourth chief ray height deviating from the entry chief ray height in a second direction opposite to the first direction. | 10-27-2011 |
20110292367 | IMAGING OPTICAL SYSTEM - The disclosure generally relates to imaging optical systems that include a plurality of mirrors, which image an object field lying in an object plane in an image field lying in an image plane, where at least one of the mirrors has a through-hole for imaging light to pass through. The disclosure also generally relates to projection exposure installations that include such imaging optical systems, methods of using such projection exposure installations, and components made by such methods. | 12-01-2011 |
20120008124 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE INSTALLATION FOR MICROLITHOGRAPHY WITH AN IMAGING OPTICAL SYSTEM OF THIS TYPE - An imaging optical system has a plurality of mirrors, which via a beam path for imaging light, image an object field in an object plane into an image field in an image plane. The imaging optical system has an exit pupil obscuration. At least one of the mirrors has no opening for passage of the imaging light. The fourth to last mirror in the beam path is concave, resulting in an imaging optical system having improved imaging properties without compromise in throughput. | 01-12-2012 |
20120008125 | IMAGING OPTICS AND PROJECTION EXPOSURE INSTALLATION FOR MICROLITHOGRAPHY WITH AN IMAGING OPTICS - An imaging optics has at least six mirrors, which image an object field in an object plane in an image field in an image plane. An entry pupil of the imaging optics is arranged in the imaging beam path in front of the object field. At least one of the mirrors has a through-opening for the passage of imaging light. A mechanically accessible pupil, in which an obscuration stop is arranged for the central shading of the pupil of the imaging optics, is located in a pupil plane in the imaging beam path between the object field and a first of the through-openings. A first imaging part beam directly after a second mirror in the imaging beam path after the object field and a second imaging part beam directly after a fourth mirror in the imaging beam path after the object field intersect one another in an intersection region. The result is an imaging optics, in which a handleable combination of small imaging errors, manageable production and a good throughput for the imaging light is achieved. | 01-12-2012 |
20120069312 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE INSTALLATION FOR MICROLITHOGRAPHY WITH AN IMAGING OPTICAL SYSTEM OF THIS TYPE - An imaging optical system has a plurality of mirrors which image an object field in an object plane in an image field in an image plane. The imaging optical system has a pupil obscuration. The last mirror in the beam path of the imaging light between the object field and the image field has a through-opening for the passage of the imaging light. A penultimate mirror of the imaging optical system in the beam path of the imaging light between the object field and the image field has no through-opening for the passage of the imaging light. The result is an imaging optical system that provides a combination of small imaging errors, manageable production and a good throughput for the imaging light. | 03-22-2012 |
20120069314 | IMAGING OPTICS AND PROJECTION EXPOSURE INSTALLATION FOR MICROLITHOGRAPHY WITH AN IMAGING OPTICS OF THIS TYPE - An imaging optics has a plurality of mirrors which image an object field in an object plane in an image field in an image plane. A pupil plane is arranged in the imaging beam path between the object field and the image field. A stop is arranged in the pupil plane. The pupil plane is tilted at an angle (α) with respect to the object plane, where α is greater than 0.1°. The imaging optics results allows for a manageable combination of small imaging errors, manageable production and good throughput. | 03-22-2012 |
20120069315 | IMAGING OPTICS AND PROJECTION EXPOSURE INSTALLATION FOR MICROLITHOGRAPHY WITH AN IMAGING OPTICS - Imaging optics includes a first mirror in the imaging beam path after the object field, a last mirror in the imaging beam path before the image field, and a fourth to last mirror in the imaging beam path before the image field. In an unfolded imaging beam path between the object plane and the image plane, an impingement point of the chief ray on a used region of each of the plurality of mirrors has a mirror spacing from the image plane. The mirror spacing of the first mirror is greater than the mirror spacing of the last mirror. The mirror spacing of the fourth to last mirror is greater than the mirror spacing of the first mirror. Chief rays that emanate from points of the object field that are spaced apart from another have a mutually diverging beam course, giving a negative back focus of the entrance pupil. | 03-22-2012 |
20120075608 | PROJECTION OBJECTIVE AND PROJECTION EXPOSURE APPARATUS WITH NEGATIVE BACK FOCUS OF THE ENTRY PUPIL - The disclosure concerns a projection objective, which can include an object plane in which an object field is formed, an entry pupil, a mirrored entry pupil (RE) in a mirrored entry pupil plane obtained by mirroring the entry pupil (VE) at the object plane, an image plane, an optical axis, at least a first mirror and a second mirror. The projection objective can have a negative back focus of the entry pupil, and a principal ray originating from a central point of the object field and traversing the objective from the object plane to the image plane can intersect the optical axis in at least one point of intersection, wherein the geometric locations of all points of intersection lie between the image plane and the mirrored entry pupil plane. | 03-29-2012 |
20120092637 | MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification. | 04-19-2012 |
20120127566 | MAGNIFYING IMAGING OPTICAL SYSTEM AND METROLOGY SYSTEM WITH AN IMAGING OPTICAL SYSTEM OF THIS TYPE - A magnifying imaging optical system is disclosed that has precisely three mirrors, which image an object field in an object plane into an image field in an image plane. A ratio between a transverse dimension of the image field and a transverse dimension measured in the same direction of a useful face of the last mirror before the image field is greater than 3. In a further aspect, the magnifying imaging optical system is disclosed that has at least three mirrors, which image an object field in an object plane in an image field in an image plane. A first mirror in the beam path after the object field is concave, a second mirror is also concave and a third mirror is convex. An angle of incidence of imaging beams on the last mirror before the image field is less than 15°. | 05-24-2012 |
20120140351 | MAGNIFYING IMAGING OPTICAL UNIT AND METROLOGY SYSTEM INCLUDING SAME - An imaging optical unit includes at least four mirrors to image an object field in an object plane into an image field in an image plane. The ratio of the structural length of the imaging optical unit to the imaging scale of the imaging optical unit is less than 4.9 mm. The imaging optical unit provides improved handling properties, such as, for example, when used in a metrology system. | 06-07-2012 |
20120140454 | MAGNIFYING IMAGING OPTICAL UNIT AND METROLOGY SYSTEM INCLUDING SAME - A magnifying imaging optical unit has at least four mirrors to image an object field in an object plane into an image field in an image plane. An absolute value of the Petzval radius of the image field is greater than 500 mm. The imaging optical unit can be used to inspect with sufficient imaging quality relatively large mask sections of lithography masks used during projection exposure to produce large scale integrated semiconductor components. | 06-07-2012 |
20120147347 | IMAGING OPTICAL SYSTEM AND ILLUMINATION OPTICAL SYSTEM - An imaging optical system has a plurality of mirrors, which image an object field in an object plane into an image field in an image plane. A reflection face of at least one of the mirrors is configured as a free form face which cannot be described by a rotationally symmetrical function. The object field has an aspect ratio greater than 1. A ratio of a minimal and a maximal transverse dimension of the object field can be less than 0.9. | 06-14-2012 |
20120182533 | OPTICAL ARRANGEMENT AND MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS INCLUDING SAME - An optical arrangement includes at least one optical element and a support element for the optical element. The optical element and the support element are connected together by way of at least three decoupling elements. The decoupling elements are formed monolithically with the optical element and with the support element. | 07-19-2012 |
20120188525 | CATOPTRIC OBJECTIVES AND SYSTEMS USING CATOPTRIC OBJECTIVES - In general, in a first aspect, the invention features a system that includes a microlithography projection optical system. The microlithography projection optical system includes a plurality of elements arranged so that during operation the plurality of elements image radiation at a wavelength λ from an object plane to an image plane. At least one of the elements is a reflective element that has a rotationally-asymmetric surface positioned in a path of the radiation. The rotationally-asymmetric surface deviates from a rotationally-symmetric reference surface by a distance of about λ or more at one or more locations of the rotationally-asymmetric surface. | 07-26-2012 |
20120208115 | IMAGING OPTICS - An imaging optics includes a plurality of mirrors which reflect imaging light to image an object field in an object plane into an image field in an image plane. A mirror body of at least one of the mirrors has a through-opening for the imaging light to pass through. The through-opening has an internal region of a smallest opening width in the mirror body. The through-opening expands from the internal region towards both edge regions of the mirror body. A disturbing influence of unused light portions is reduced or eliminated completely. | 08-16-2012 |
20120224160 | REFLECTIVE OPTICAL IMAGING SYSTEM - An optical imaging system serving for imaging a pattern arranged in an object plane of the imaging system into an image plane of the imaging system with the aid of electromagnetic radiation from a wavelength range around a main wavelength λ | 09-06-2012 |
20120229784 | MIRROR FOR USE IN A MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS - A mirror including a substrate and a reflective coating that includes a first group of layers and a second group of layers arranged between the substrate and the first group of layers. Both the first and second groups of layers include a plurality of alternating first material layers and second material layers, arranged one above another. The refractive index of the first material for radiation in the range of 5-30 nm is greater than the refractive index of the second material in that wavelength range. The first group of layers is configured to have a number of layers that is greater than 20, such that, upon irradiation with radiation having a wavelength in the range of 5-30 nm, less than 20% of the radiation reaches the second group of layers, which has a layer thickness variation for correcting the surface form of the mirror. | 09-13-2012 |
20120236272 | COMBINATION STOP FOR CATOPTRIC PROJECTION ARRANGEMENT - The disclosure relates to an optical projection arrangement that can be used to image a reticle onto a substrate. The projection arrangement includes reflective elements, by which a ray path is defined. A combination stop is in a pupil of the ray path. The combination stop has a first opening (aperture opening) for use as an aperture stop. The combination stop also has a second opening for allowing passage of a ray bundle of the ray path, such that the combination stop acts as a combined aperture stop and stray light stop. In addition, the disclosure relates to a corresponding combination stop for optical arrangements, as well as related systems, components and methods. | 09-20-2012 |
20120236282 | IMAGING OPTICAL SYSTEM - The disclosure generally relates to imaging optical systems that include a plurality of mirrors, which image an object field lying in an object plane in an image field lying in an image plane, where at least one of the mirrors has a through-hole for imaging light to pass through. The disclosure also generally relates to projection exposure installations that include such im-aging optical systems, methods of using such projection exposure installa-tions, and components made by such methods. | 09-20-2012 |
20120250147 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter D | 10-04-2012 |
20120274917 | IMAGING OPTICS - An imaging optics is provided for lithographic projection exposure for guiding a bundle of imaging light with a wavelength shorter than 193 nm via a plurality of mirrors for beam-splitter-free imaging of a reflective object in an object field in an object plane into an image field in an image plane. An object field point has a central ray angle which is smaller than 3°. At least one of the mirrors is a near-field mirror. The imaging optics which can allow for high-quality imaging of a reflective object. | 11-01-2012 |
20120274918 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern onto an image plane includes: a first objective part for imaging the pattern into a first intermediate image; a second objective part for imaging the first intermediate image into a second intermediate image; and a third objective part for imaging the second intermediate image onto the image plane. A first concave mirror having a continuous mirror surface and a second concave mirror having a continuous mirror surface are upstream of the second intermediate image. A pupil surface is formed between the object plane and the first intermediate image, between the first and the second intermediate image, and between the second intermediate image and the image plane. A plate having essentially parallel plate surfaces is positioned in the first objective part near the pupil surface. At least one plate surface is aspherized to correct for aberrations. | 11-01-2012 |
20120274919 | CATADIOPTRIC PROJECTION OBJECTIVE - A reflection mirror assembly for use in a catadioptric imaging optical system includes two curved reflection mirrors, each including a reflection surface expressed by equation (a), where y represents height in a direction perpendicular to the optical axis, z represents distance (sag amount) along the optical axis from a tangent plane at a vertex of the reflection surface to a position on the reflection surface at height y, r represents a vertex curvature radius, and R represents a conical coefficient; | 11-01-2012 |
20120293779 | REFLECTIVE OPTICAL ELEMENT AND EUV LITHOGRAPHY APPLIANCE - A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d | 11-22-2012 |
20130010352 | PROJECTION OBJECTIVE HAVING MIRROR ELEMENTS WITH REFLECTIVE COATINGS - An optical system is disclosed that includes a plurality of elements arranged to image radiation at a wavelength λ from an object field in an object surface to an image field in an image surface. The elements include mirror elements have a reflective surface formed by a reflective coating positioned at a path of radiation. At least one of the mirror elements has a rotationally asymmetrical reflective surface deviating from a best-fit rotationally symmetric reflective surface by about λ or more at one or more locations. The elements include an apodization correction element effective to correct a spatial intensity distribution in an exit pupil of the optical system relative to the optical system without the apodization correcting element. The apodization correction element can be effective to increase symmetry of the spatial intensity distribution in the exit pupil relative to the optical system without the apodization correcting element. | 01-10-2013 |
20130027681 | EUV COLLECTOR - A collector transfers an emission of an EUV radiation source to a main intensity spot. The collector has at least one collector subunit including at least one grazing incidence mirror. The grazing incidence mirror transfers EUV radiation from the radiation source to an intensity spot. At least one ellipsoid mirror of the collector has an ellipsoidal mirror surface. The ellipsoidal mirror surface is impinged by an angle of incidence above a critical grazing incidence angle. No more than one collector subunit is arranged in the beam path of an EUV radiation source between a position of the EUV radiation source and the intensity spot. At least some of the EUV rays are only reflected in a grazing manner. | 01-31-2013 |
20130050671 | IMAGING OPTICSIIMAGING OPTICS, MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS HAVING SAME AND RELATED METHODS - An imaging optics has a plurality of mirrors to image an object field in an object plane into an image field in an image plane. The imaging optics includes a first partial objective to image the object field onto an intermediate image, and the imaging optics includes a second partial objective to image the intermediate image onto the image field. The second partial objective includes a penultimate mirror in the beam path of imaging light between the object field and the image field, and the second partial objective includes a last mirror in the beam path. The penultimate mirror images the intermediate image onto a further intermediate image, and the last mirror images the further intermediate image onto the image field. | 02-28-2013 |
20130050672 | APPARATUS FOR MICROLITHOGRAPHIC PROJECTION EXPOSURE AND APPARATUS FOR INSPECTING A SURFACE OF A SUBSTRATE - An apparatus ( | 02-28-2013 |
20130063710 | CATOPTRIC OBJECTIVES AND SYSTEMS USING CATOPTRIC OBJECTIVES - In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective. | 03-14-2013 |
20130070227 | IMAGING OPTICAL SYSTEM - An imaging optical system for EUV projection lithography has a plurality of mirrors for imaging an object field in an object plane into an image field in an image plane. An image-side numerical aperture of the imaging optical system is at least 0.3. The imaging optical system has a pupil obscuration which is greater than 0.40 and an image filed size of at least 1 mm×10 mm. The imaging optical system can provide high quality imaging of the object. | 03-21-2013 |
20130088701 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE INSTALLATION FOR MICROLITHOGRAPHY INCLUDING SAME - An imaging optical system has a plurality of mirrors which image an object field in an object plane into an image field in an image plane. The imaging optical system has a pupil obscuration. The last mirror in the beam path of the imaging light between the object field and the image field has a through-opening for the passage of the imaging light. A penultimate mirror of the imaging optical system in the beam path of the imaging light between the object field and the image field has no through-opening for the passage of the imaging light. The imaging optical system has precisely eight mirrors. The result is an imaging optical system which exhibits a favorable combination of small imaging errors, manageable production and good throughput. | 04-11-2013 |
20130120728 | CATADIOPTRIC PROJECTION OBJECTIVE WITH MIRROR GROUP - A catadioptric projection objective for imaging an off-axis object field arranged in an object surface of the projection objective onto an off-axis image field arranged in an image surface of the projection objective has a front lens group, a mirror group comprising four mirrors and having an object side mirror group entry, an image side mirror group exit, and a mirror group plane aligned transversely to the optical axis and arranged geometrically between the mirror group entry and the mirror group exit; and a rear lens group. | 05-16-2013 |
20130128251 | IMAGING OPTICAL SYSTEM - An imaging optical system for a projection exposure system has at least one anamorphically imaging optical element. This allows a complete illumination of an image field in a first direction with a large object-side numerical aperture in this direction, without the extent of the reticle to be imaged having to be enlarged and without a reduction in the throughput of the projection exposure system occurring. | 05-23-2013 |
20130242278 | Projection objective of a microlithographic projection exposure apparatus designed forEUV and a method of optically adjusting a projection objective - The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane, wherein the projection objective has at least one mirror segment arrangement ( | 09-19-2013 |
20130250428 | MAGNIFYING IMAGING OPTICAL UNIT AND METROLOGY SYSTEM COMPRISING SUCH AN IMAGING OPTICAL UNIT - A magnifying imaging optical unit ( | 09-26-2013 |
20130301023 | REFLECTIVE OPTICAL ELEMENT AND EUV LITHOGRAPHY APPLIANCE - A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d | 11-14-2013 |
20130342821 | IMAGING OPTICAL SYSTEM - The disclosure generally relates to imaging optical systems that include a plurality of mirrors, which image an object field lying in an object plane in an image field lying in an image plane, where at least one of the mirrors has a through-hole for imaging light to pass through. The disclosure also generally relates to projection exposure installations that include such imaging optical systems, methods of using such projection exposure installations, and components made by such methods. | 12-26-2013 |
20140036246 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE SYSTEM FOR MICROLITHOGRAPHY - An imaging optical system includes a plurality of mirrors that image an object field in an object plane into an image field in an image plane. At least one of the mirrors is obscured, and thus has an opening for imaging light to pass through. The fourth-last mirror in the light path before the image field is not obscured and provides, with an outer edge of the optically effective reflection surface thereof, a central shadowing in a pupil plane of the imaging optical system. The distance between the fourth-last mirror and the last mirror along the optical axis is at least 10% of the distance between the object field and the image field. An intermediate image, which is closest to the image plane, is arranged between the last mirror and the image plane. The imaging optical system can have a numerical aperture of 0.9. These measures, not all of which must be effected simultaneously, lead to an imaging optical system with improved imaging properties and/or reduced production costs. | 02-06-2014 |
20140038110 | IMAGING OPTICAL UNIT FOR A PROJECTION EXPOSURE APPARATUS - An imaging optical unit for a projection exposure apparatus serves for imaging an object field in an object plane into an image field in an image plane. The image field is arranged at a field distance from the object plane. The optical unit has a plurality of mirrors. The imaging optical unit has a wavefront aberration over the image field of a maximum of 0.3 nm and an image-side numerical aperture of at least 0.5. The image field in at least one dimension has an extent of at least 10 mm. The result is an imaging optical unit in particular suited as part of an optical system for a projection exposure apparatus for projection lithography. | 02-06-2014 |
20140071414 | MICROLITHOGRAPHY PROJECTION SYSTEM WITH AN ACCESSIBLE DIAPHRAGM OR APERTURE STOP - The invention relates to a microlithography projection lens for wavelengths <=248 nm<=, preferably <=193 mm, in particular EUV lithography for wavelengths ranging from 1-30 nm for imaging an object field in an object plane onto an image field in an image plane, the microlithography projection lens developed in such a manner that provision is made for an accessible diaphragm plane, into which for instance an iris diaphragm can be introduced. | 03-13-2014 |
20140078484 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE INSTALLATION FOR MICROLITHOGRAPHY WITH AN IMAGING OPTICAL SYSTEM OF THIS TYPE - An imaging optical system has a plurality of mirrors, which via a beam path for imaging light, image an object field in an object plane into an image field in an image plane. The imaging optical system has an exit pupil obscuration. At least one of the mirrors has no opening for passage of the imaging light. The fourth to last mirror in the beam path is concave, resulting in an imaging optical system having improved imaging properties without compromise in throughput. | 03-20-2014 |
20140098355 | CATOPTRIC OBJECTIVES AND SYSTEMS USING CATOPTRIC OBJECTIVES - In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective. | 04-10-2014 |
20140104588 | PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY - A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (d | 04-17-2014 |
20140111787 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first Intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter D | 04-24-2014 |
20140118714 | PROJECTION OPTICS FOR MICROLITHOGRAPHY - A projection optics for microlithography, which images an object field in an object plane into an image field in an image plane, where the projection optics include at least one curved mirror and including at least one refractive subunit, as well as related systems, components, methods and products prepared by such methods, are disclosed. | 05-01-2014 |
20140132941 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE SYSTEM INCLUDING THE SAME - An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm. | 05-15-2014 |
20140320838 | IMAGING OPTICAL SYSTEM - The disclosure generally relates to imaging optical systems that include a plurality of mirrors, which image an object field lying in an object plane in an image field lying in an image plane, where at least one of the mirrors has a through-hole for imaging light to pass through. The disclosure also generally relates to projection exposure installations that include such im-aging optical systems, methods of using such projection exposure installa-tions, and components made by such methods. | 10-30-2014 |
20140327898 | MICROLITHOGRAPHY PROJECTION OPTICAL SYSTEM AND METHOD FOR MANUFACTURING A DEVICE - In some embodiments, a catoptric microlithgraphy projection optical system includes a plurality of reflective optical elements arranged to image radiation from an object field in an object plane to an image field in an image plane. The image field can have a size of at least 1 mm×1 mm. This optical system can have an object-image shift (OIS) of about 75 mm or less. Metrology and testing can be easily implemented despite rotations of the optical system about a rotation axis. Such a catoptric microlithgraphy projection optical system can be implemented in a microlithography tool. Such a microlithography tool can be used to produce microstructured components. | 11-06-2014 |
20140362584 | MAGNIFYING IMAGING OPTICAL UNIT AND METROLOGY SYSTEM INCLUDING SAME - A magnifying imaging optical unit has at least four mirrors to image an object field in an object plane into an image field in an image plane. An absolute value of the Petzval radius of the image field is greater than 500 mm. The imaging optical unit can be used to inspect with sufficient imaging quality relatively large mask sections of lithography masks used during projection exposure to produce large scale integrated semiconductor components. | 12-11-2014 |
20140376086 | CATADIOPTRIC PROJECTION OBJECTIVE WITH TWO INTERMEDIATE IMAGES AND NO MORE THAN FOUR LENSES BETWEEN THE APERTURE STOP AND IMAGE PLANE - A projection objective for imaging a pattern provided in an object plane onto an image plane includes: a first objective part to image the pattern provided in the object plane to a first intermediate image, wherein all of the elements in the first objective part having optical power to image the pattern are refractive elements; a second objective part that includes at least one concave mirror to image the first intermediate image to a second intermediate image; and a third objective part to image the second intermediate image to the image plane, wherein all of the elements in the third objective part having optical power are refractive elements. An aperture stop is positioned in the third objective part and there are no more than four lenses in the third objective part between the aperture stop and the image plane. The projection objective has an image side numerical aperture >0.9. | 12-25-2014 |
20150022799 | MICROLITHOGRAPHIC IMAGING OPTICAL SYSTEM INCLUDING MULTIPLE MIRRORS - An imaging optical system includes a plurality of mirrors configured to image an object field in an object plane of the imaging optical system into an image field in an image plane of the imaging optical system. An illumination system includes such an imaging optical system. The transmission losses of the illumination system are relatively low. | 01-22-2015 |
20150049319 | MICROLITHOGRAPHY PROJECTION OPTICAL SYSTEM, TOOL AND METHOD OF PRODUCTION - A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength λ from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3° or more with respect to the normal to the object plane. This can allow the use of face shifting masks as objects to be imaged, in particular for EUV wavelengths. | 02-19-2015 |
20150055111 | REFLECTIVE OPTICAL ELEMENT AND EUV LITHOGRAPHY APPLIANCE - A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d | 02-26-2015 |
20150055214 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first Intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter D | 02-26-2015 |