Patent application number | Description | Published |
20110220275 | METHOD FOR PRODUCING PIEZOELECTRIC COMPOSITE SUBSTRATE AND METHOD FOR PRODUCING PIEZOELECTRIC ELEMENT - A method for producing a piezoelectric composite substrate with satisfactory productivity controls the inclination of the crystal axis and the polar axis of a single-crystal thin film and prevents an adverse effect due to pyroelectricity in a production process. The method for producing a piezoelectric composite substrate provided with a plurality of piezoelectric materials includes an ion-implantation step, a bonding step, and a separation step. In the ion-implantation step, H | 09-15-2011 |
20110266918 | PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE - A piezoelectric device includes IDT electrodes and solves various problems resulting from the IDT electrodes. The piezoelectric device has a configuration in which a piezoelectric thin-film and a support are bonded together such that the piezoelectric thin-film is supported by the support. IDT electrodes and interconnect electrodes are provided on a surface of the piezoelectric thin-film that is located on the support side. The piezoelectric thin-film includes a region in which the IDT electrodes are provided and on which no support is provided but an opening is formed. This allows the IDT electrodes and the piezoelectric thin-film and the IDT electrode-formed region of the piezoelectric thin-film to not be in contact with the support, thereby defining a membrane including only the piezoelectric thin-film and the IDT electrodes as elements, the piezoelectric thin-film and the IDT electrodes being disposed therein and being important for properties of the piezoelectric device. | 11-03-2011 |
20110277928 | METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE - A method for manufacturing a composite substrate that prevents undesirable effects of etching a thin film includes a pattern forming step, an ion implanting step, a bonding step, and a separation step. In the pattern forming step, a pattern region and a reverse pattern region are formed on a principal surface of a functional material substrate. In the ion implanting step, by implanting ions into the functional material substrate, a separation layer is formed inside at a certain distance from the surface of each of the pattern region and the reverse pattern region. In the bonding step, the functional material substrate at the pattern region is bonded to a supporting substrate. In the separation step, the pattern region is separated from the functional material substrate, and the reverse pattern region is made to fall off. | 11-17-2011 |
20120073099 | METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE - An ion implantation layer is formed in a piezoelectric single crystal substrate by implanting hydrogen ions. A lower electrode is formed on the surface of the piezoelectric single crystal substrate at a side at which the ion implantation layer is formed. A sacrificial layer is formed on the surface of the piezoelectric single crystal substrate at a side at which the ion implantation layer and the lower electrode are formed. The formation of the sacrificial layer is performed by direct formation thereof on the surface of the piezoelectric single crystal substrate, for example, by sputtering or coating. A support layer is formed on the piezoelectric single crystal substrate on which the sacrificial layer is formed, and after the surface of the support layer is planarized, a support base material is bonded thereto. | 03-29-2012 |
20120098387 | ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - An elastic wave device includes a piezoelectric thin film formed from a piezoelectric single crystal substrate by peeling, an inorganic layer formed on a rear surface of the piezoelectric thin film, an elastic layer disposed on a surface of the inorganic layer opposite to the piezoelectric thin film, and a support member adhered to a surface of the elastic layer opposite to the inorganic layer. The elastic layer reduces stress generated when the piezoelectric thin film provided with the inorganic layer and the support member are adhered to each other and has a predetermined elastic modulus. The inorganic layer is formed of a material having a higher elastic modulus than that of the elastic layer and prevents damping generated when the elastic layer is provided. | 04-26-2012 |
20130285768 | ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film. | 10-31-2013 |
20140030442 | MANUFACTURING METHOD FOR BOUNDARY ACOUSTIC WAVE DEVICE AND BOUNDARY ACOUSTIC WAVE DEVICE - A manufacturing method for a boundary acoustic wave device is capable of certainly providing the boundary acoustic wave device with desired target frequency characteristics. The manufacturing method for the boundary acoustic wave device includes a process for preparing a laminated body that includes a first medium, a second medium laminated on the first medium, and an IDT electrode that is disposed at an interface between the first and second media, and a process for implanting ions from an outer portion of the second medium and adjusting a frequency. | 01-30-2014 |
20140152145 | ELASTIC WAVE DEVICE AND MANUFACTURING METHOD FOR SAME - An elastic wave device includes a support layer with a through-hole or a recess opened at an upper surface thereof, a piezoelectric thin film arranged on the support layer to extend above the recess or the through-hole of the support layer, and an IDT electrode defined on at least one of upper and lower surfaces of the piezoelectric thin film in a region of the piezoelectric thin film, the region extending above the recess, or the through-hole. A secondary mode of a plate wave, which contains a U1 component as a main component, is utilized. The piezoelectric thin film is made of LiTaO | 06-05-2014 |
20140167566 | PIEZOELECTRIC BULK WAVE DEVICE, AND METHOD OF MANUFACTURING THE PIEZOELECTRIC BULK WAVE DEVICE - A piezoelectric bulk wave device that includes a piezoelectric thin plate that is made of LiTaO | 06-19-2014 |
20140175945 | PIEZOELECTRIC BULK WAVE DEVICE, AND METHOD OF MANUFACTURING THE PIEZOELECTRIC BULK WAVE DEVICE - A piezoelectric bulk wave device that includes a piezoelectric thin plate that is made of LiTaO | 06-26-2014 |
20140175949 | PIEZOELECTRIC BULK WAVE DEVICE, AND METHOD OF MANUFACTURING THE PIEZOELECTRIC BULK WAVE DEVICE - A piezoelectric bulk wave device that includes a piezoelectric thin plate that is made of LiTaO | 06-26-2014 |
20140203893 | ELASTIC WAVE DEVICE - An elastic wave device includes a medium layer, a piezoelectric body, and an IDT electrode that are disposed on a supporting substrate. The medium layer is made of a medium containing a low-velocity medium in which a propagation velocity of a same bulk wave as that which is a main vibration component of an elastic wave propagating in the piezoelectric body and being used is lower than a propagation velocity of the elastic wave, and a high-velocity medium in which the propagation velocity of the same bulk wave as that which is a main vibration component of the elastic wave is higher than the propagation velocity of the elastic wave. | 07-24-2014 |
20150028720 | ELASTIC WAVE DEVICE AND METHOD FOR PRODUCING THE SAME - An elastic wave device includes a lithium niobate film, a supporting substrate, a high-acoustic-velocity film located on the supporting substrate and configured so that the acoustic velocity of a propagating bulk wave is higher than the acoustic velocity of an elastic wave that propagates on the lithium niobate film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and configured so that the acoustic velocity of the propagating bulk wave is lower than the acoustic velocity of the bulk wave that propagates in the lithium niobate film, the lithium niobate film being stacked on the low-acoustic-velocity film, and an IDT electrode located on either side of the lithium niobate film. When the lithium niobate film has Euler angles of (0°±5°, θ, 0°), θ is in the range of about 0° to about 8° and about 57° to about 180°. | 01-29-2015 |
20150033521 | ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film. | 02-05-2015 |