H. C.
H. C. Cheng, Hsinchu TW
Patent application number | Description | Published |
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20100013020 | Semiconductor device with semi-insulating substrate portions - A semiconductor substrate includes semi-insulating portions beneath openings in a patterned hardmask film formed over a semiconductor substructure to a thickness sufficient to prevent charged particles from passing through the hardmask. The semi-insulating portions include charged particles and may extend deep into the semiconductor substrate and electrically insulate devices formed on opposed sides of the semi-insulating portions. The charged particles may advantageously be protons and further substrate portions covered by the patterned hardmask film are substantially free of the charged particles. | 01-21-2010 |
H. C. Ho, Zhonghe City TW
Patent application number | Description | Published |
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20090283661 | MONITOR ALLOWING POSITION ADJUSTMENT OF AUDIO AND VIDEO RETRIEVING UNITS PROVIDED THEREON - A monitor includes a display mechanism having a display screen located on a front side thereof, and a video retrieving unit and an audio retrieving unit located at predetermined positions in the vicinity of the display screen; an adjusting mechanism connected to and located behind the display mechanism, and including a rotating unit connected to a rear lower portion of the display mechanism, and an elevating unit connected at an upper end to the rotating unit; and abase being fixedly connected to a lower end of the adjusting mechanism and provided at a bottom surface with a rotary disc. With these arrangements, the video and audio retrieving units of the display mechanism may be adjusted to a desired vertical height, inclination angle, and/or horizontal angle via the adjusting mechanism and the rotary disc of the base. | 11-19-2009 |
H. C. Jang, Buchon KR
Patent application number | Description | Published |
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20110001189 | Power Semiconductor Devices Having Termination Structures - A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region, source regions having the first conductivity type formed in the well region adjacent the active trench, and a first termination trench extending below the well region and disposed at an outer edge of an active region of the device. The sidewalls and bottom of the active trench are lined with dielectric material, and substantially filled with a first conductive layer forming an upper electrode and a second conductive layer forming a lower electrode, the upper electrode being disposed above the lower electrode and separated therefrom by inter-electrode dielectric material. The first termination trench can be lined with a layer of dielectric material that is thicker than the dielectric material lining the sidewalls of the active trench, and is substantially filled with conductive material. | 01-06-2011 |