Patent application number | Description | Published |
20140001596 | Sinker with a Reduced Width | 01-02-2014 |
20150021687 | SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SEMICONDUCTOR STRUCTURE WITH DEEP TRENCH ISOLATION STRUCTURES - The density of a transistor array is increased by forming one or more deep trench isolation structures in a semiconductor material. The deep trench isolation structures laterally surround the transistors in the array. The deep trench isolation structures limit the lateral diffusion of dopants and the lateral movement of charge carriers. | 01-22-2015 |
20150097225 | TRENCH GATE TRENCH FIELD PLATE SEMI-VERTICAL SEMI-LATERAL MOSFET - A semiconductor device has a vertical drain extended MOS transistor with deep trench structures to define a vertical drift region and at least one vertical drain contact region, separated from the vertical drift region by at least one instance of the deep trench structures. Dopants are implanted into the vertical drain contact regions and the semiconductor device is annealed so that the implanted dopants diffuse proximate to a bottom of the deep trench structures. The vertical drain contact regions make electrical contact to the proximate vertical drift region at the bottom of the intervening deep trench structure. At least one gate, body region and source region are formed above the drift region at, or proximate to, a top surface of a substrate of the semiconductor device. The deep trench structures are spaced so as to form RESURF regions for the drift region. | 04-09-2015 |
20150097230 | TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET - A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the transistor, so that each vertical drift region is bounded on at least two opposite sides by the deep trench structures. The deep trench structures are spaced so as to form RESURF regions for the drift region. Trench gates are formed in trenches in the substrate over the vertical drift regions. The body regions are located in the substrate over the vertical drift regions. | 04-09-2015 |
20150097231 | VERTICAL TRENCH MOSFET DEVICE IN INTEGRATED POWER TECHNOLOGIES - A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define at least one vertical drift region bounded on at least two opposite sides by the deep trench structures. The deep trench structures include dielectric liners. The deep trench structures are spaced so as to form RESURF regions for the drift region. Vertical gates are formed in vertically oriented gate trenches in the dielectric liners of the deep trench structures, abutting the vertical drift regions. A body implant mask for implanting dopants for the transistor body is also used as an etch mask for forming the vertically oriented gate trenches in the dielectric liners. | 04-09-2015 |
20150118861 | CZOCHRALSKI SUBSTRATES HAVING REDUCED OXYGEN DONORS - A method of semiconductor fabrication includes providing an unpatterned lightly doped Czochralski bulk silicon substrate (LDCBS substrate) having a concentration of oxygen atoms of at least (≧) 10 | 04-30-2015 |
20150214096 | SINKER WITH A REDUCED WIDTH - The width of a heavily-doped sinker is substantially reduced by forming the heavily-doped sinker to lie in between a number of closely-spaced trench isolation structures, which have been formed in a semiconductor material. During drive-in, the closely-spaced trench isolation structures significantly limit the lateral diffusion. | 07-30-2015 |
20150270391 | SEMICONDUCTOR STRUCTURE WITH A DOPED REGION BETWEEN TWO DEEP TRENCH ISOLATION STRUCTURES - The density of a transistor array is increased by forming one or more deep trench isolation structures in a semiconductor material. The deep trench isolation structures laterally surround the transistors in the array. The deep trench isolation structures limit the lateral diffusion of dopants and the lateral movement of charge carriers. | 09-24-2015 |