Patent application number | Description | Published |
20120019335 | SELF COMPENSATED DIRECTIONAL COUPLER - A self-compensated strip-coupled directional coupler. In one example, the self-compensated directional coupler includes a main arm formed in a single first layer of a multi-layer substrate, and a coupled arm formed in a single second layer of the multi-layer substrate. One of the coupled arm and the main arm includes a zigzag structure to compensate for misalignment between the first and second layers that can occur during manufacturing. | 01-26-2012 |
20120032735 | REDUCING COUPLING COEFFICIENT VARIATION BY USING CAPACITORS - A coupler is presented that has high-directivity and low coupling coefficient variation. The coupler includes a first trace associated with a first port and a second port. The first port is configured substantially as an input port and the second port is configured substantially as an output port. The coupler further includes a second trace associated with a third port and a fourth port. The third port is configured substantially as a coupled port and the fourth port is configured substantially as an isolated port. In addition, the coupler includes a first capacitor configured to introduce a discontinuity to induce a mismatch in the coupler. | 02-09-2012 |
20120038433 | REDUCING COUPLING COEFFICIENT VARIATION BY USING ANGLED CONNECTING TRACES - A coupler is presented that has high-directivity and low coupling coefficient variation. The coupler includes a first trace associated with a first port and a second port. The first trace includes a first main arm, a first connecting trace connecting the first main arm to the second port, and a non-zero angle between the first main arm and the first connecting trace. Further, the coupler includes a second trace associated with a third port and a fourth port. The second trace includes a second main arm. | 02-16-2012 |
20120038436 | REDUCING COUPLING COEFFICIENT VARIATION USING INTENDED WIDTH MISMATCH - A coupler is presented that has high-directivity and low coupling coefficient variation. The coupler includes a first trace with a first edge substantially parallel to a second edge and substantially equal in length to the second edge. The first trace includes a third edge substantially parallel to a fourth edge. The fourth edge is divided into three segments. The outer segments are a first distance from the third edge. The middle segment is a second distance from the third edge. Further, the coupler includes a second trace, which includes a first edge substantially parallel to a second edge and substantially equal in length to the second edge. The second trace includes a third edge substantially parallel to a fourth edge. The fourth edge is divided into three segments. The outer segments are a first distance from the third edge. The middle segment is a second distance from the third edge. | 02-16-2012 |
20120044980 | MULTI-MODE HIGH EFFICIENCY LINEAR POWER AMPLIFIER - A power amplifier includes a plurality of amplification paths in which at least one amplification path is selectively enabled and disabled, wherein each amplification path includes an output impedance modification element and an output phase shift element that is operable independently from the output impedance modification element, and wherein the output impedance modification element in each amplification path provides selective impedance for each amplification path. | 02-23-2012 |
20130021219 | RADIO-FREQUENCY MODULES HAVING TUNED SHIELDING-WIREBONDS - Disclosed are devices and methods related to radio-frequency (RF) shielding of RF modules. In some embodiments, tuned shielding can be achieved by utilizing different structures and/or arrangements of shielding-wirebonds to increase shielding in areas where needed, and to decrease shielding where not needed. Such tuning of shielding requirements can be obtained by measuring RF power levels at different locations of a module having a given design. Such tuned RF shielding configurations can improve the overall effectiveness of shielding, and can also be more cost effective to implement. | 01-24-2013 |
20130029619 | SIGNAL PATH TERMINATION - This disclosure relates to a harmonic termination circuit that is separate from a load line. In one embodiment, the load line is configured to match an impedance at the power amplifier output at a fundamental frequency of the power amplifier output and the harmonic termination circuit is configured to terminate at a phase corresponding to a harmonic frequency of the power amplifier output. According to certain embodiments, the load line and the harmonic termination circuit can be electrically coupled to the power amplifier output external to a power amplifier die via different output pins of the power amplifier die. | 01-31-2013 |
20130057451 | TRANSMISSION LINE FOR HIGH PERFORMANCE RADIO FREQUENCY APPLICATIONS - This disclosure relates to a transmission line for high performance radio frequency (RF) applications. One such transmission line can include a bonding layer configured to receive an RF signal, a barrier layer, a diffusion barrier layer, and a conductive layer proximate to the diffusion barrier layer. The diffusion barrier layer can have a thickness that allows a received RF signal to penetrate the diffusion barrier layer to the conductive layer. In certain implementations, the diffusion barrier layer can be nickel. In some of these implementations, the transmission line can include a gold bonding layer, a palladium barrier layer, and a nickel diffusion barrier layer. | 03-07-2013 |
20130116017 | APPARATUS AND METHODS FOR POWER AMPLIFIERS - Apparatus and methods for power amplifiers are disclosed. In one embodiment, a power amplifier circuit assembly includes a power amplifier and an impedance matching network. The impedance matching network is operatively associated with the power amplifier and is configured to provide a load line impedance to the power amplifier between about 6 Ω and about 10 Ω. The impedance matching network includes a fundamental matching circuit and one or more termination circuits, and the fundamental matching circuit and each of the of the one or more termination circuits include separate input terminals for coupling to an output of the power amplifier so as to allow the fundamental matching circuit and each of the one or more termination circuits to be separately tuned. | 05-09-2013 |
20130130750 | MULTI-MODE POWER AMPLIFIER - A multi-mode power amplifier includes a high-power mode amplifier circuit, a mid-power mode amplifier circuit, and a low power amplifier circuit, where the low-power mode amplifier circuit comprises a plurality of independently selectable power cell/amplifier branches. The multi-mode power amplifiers selectively enable or disable amplifier branches to provide multiple levels of amplification. Selectively enabling certain of a plurality of split collector amplifier branches provides multiple low power and ultra-low power amplifier modes without the impedance mismatch or board layout problems associated with an RF switch. | 05-23-2013 |
20130130752 | FLIP-CHIP LINEAR POWER AMPLIFIER WITH HIGH POWER ADDED EFFICIENCY - Disclosed are devices and methods for improving power added efficiency and linearity of radio-frequency power amplifiers implemented in flip-chip configurations. In some embodiments, a harmonic termination circuit can be provided so as to be separate from an output matching network configured to provide impedance matching at a fundamental frequency. The harmonic termination circuit can be configured to terminate at a phase corresponding to a harmonic frequency of the power amplifier output. Such a configuration of separate fundamental matching network and harmonic termination circuit allows each to be tuned separately to thereby improve performance parameters such as power added efficiency and linearity. | 05-23-2013 |
20130324069 | VIA DENSITY AND PLACEMENT IN RADIO FREQUENCY SHIELDING APPLICATIONS - Aspects of the present disclosure relate to determining the location and/or density of vias that form part of an RF isolation structure of a packaged module and the resulting RF isolation structures. From electromagnetic interference (EMI) data, locations of where via density can be increased and/or decreased without significantly degrading the EMI performance of the RF isolation structure can be identified. In certain embodiments, one or more vias can be added and/or removed from a selected area of the packaged module based on the EMI data. | 12-05-2013 |