Patent application number | Description | Published |
20080277681 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a reflecting layer, an active layer, a transparent electrode, a first photonic crystal structure, and a second photonic crystal structure. The reflecting layer is disposed on the substrate. The active layer is disposed on the reflecting layer. The transparent electrode is disposed on the active layer and includes an upper surface and a lower surface. The lower surface of the transparent electrode combines with the active layer. The first photonic crystal structure is formed on the upper surface of the transparent electrode. The second photonic crystal structure formed in the active layer. | 11-13-2008 |
20090034264 | Backlight module - A backlight module includes a light source, a light guide plate and a reflector. The light guide plate includes a light incidence surface, a light-emitting surface opposite to the light incidence surface, and a pair of side surfaces connecting the light incidence surface to the light-emitting surface. The light-emitting surface of the light guide plate includes a groove formed therein. The reflector is placed between the light source and the light incidence surface of the light guide plate, and located corresponding to the groove of the light-emitting surface of the light guide plate. The reflector includes a light-receiving surface. The light source is facing the light-receiving surface of the reflector. | 02-05-2009 |
20090040757 | MIXED LIGHT APPARATUS - A mixed light apparatus for mixing light emitted from a first light source and a second light source includes a body, a first light reflecting element and a second light reflecting element. The body has a light emitting surface. A first reflecting element extends from the light emitting surface. The first light reflecting element has a first emanating point and a first focal point. The first light source is disposed at the first focal point. A second reflecting element extends from the light emitting surface. The second light reflecting element has a second emanating point and a second focal point. The second light source is disposed at the second focal point. The first emanating point and the second emanating point overlaps and are disposed on the light emitting surface. | 02-12-2009 |
20090040768 | LIGHT GUIDE PLATE AND DIRECT-TYPE BACKLIGHT MODULE WITH SAME - An exemplary backlight module includes a light guide plate and light sources. The light guide plate includes a block body and the recessed parts. The block body has a top light output surface and a bottom surface. The recessed parts are provided at the bottom surface. The light sources are disposed at least partly in or adjacent to the recessed parts. | 02-12-2009 |
20090116033 | REFRACTIVE INDEX SENSOR - An exemplary refractive-index sensor includes a photonic crystal microcavity structure, a light source, and a detector. The photonic crystal microcavity structure includes a photonic crystal layer having first holes and a second hole. The first holes are arranged in a pattern of staggered parallel rows. The second hole is located at an approximate center point of the middle row of the pattern rather than a first hole. A diameter of the second hole is less than that of each of the first holes. Some of the first holes disposed at each of opposite ends of a diagonal row having the second hole are omitted to define an input waveguide and an output waveguide. The light source is adjacent to the input waveguide. The detector is adjacent to the output waveguide. | 05-07-2009 |
20090116237 | BACKLIGHT MODULE - A backlight module includes a light guide plate, at least one mixed light apparatus, a first light source and a second light source. The light guide plate includes a body including at least one recess provided at a bottom surface thereof. The mixed light apparatus is disposed partly in or adjacent to the recess. The mixed light apparatus includes a body, a first light reflecting element and a second light reflecting element. The body of the mixed light apparatus has a light emitting surface. Each of the light reflecting elements extends from the light emitting surface. Each of the light reflecting elements has an emanating point and a focal point. The emanating points overlap at the light emitting surface. One of the light sources is disposed at one of the focal points. | 05-07-2009 |
20090116238 | MIXED LIGHT APPARATUS - A mixed light apparatus for mixing light emitted from a first light source and a second light source includes a body, a first light reflecting element, a second light reflecting element and a field lens. The body has a light emitting surface. A first reflecting element extends from the light emitting surface. The first light reflecting element has a first emanating point and a first focal point. The first light source is disposed at the first focal point. A second light reflecting element extends from the light emitting surface. The second light reflecting element has a second emanating point and a second focal point. The second light source is disposed at the second focal point. The first emanating point and the second emanating point overlapat the light emitting surface. The field lens is disposed on the light emitting surface and corresponds to the first and second emanating points. | 05-07-2009 |
20090153843 | REFRACTIVE-INDEX SENSOR - An exemplary refractive-index sensor includes a photonic crystal microcavity structure, a light source, and a detector. The photonic crystal microcavity structure includes a photonic crystal layer having first holes and a second hole defined therein. The first holes are arranged in a regular pattern of staggered parallel rows. The second hole is at an approximate center of the regular pattern, instead of a first hole. A diameter of the second hole is different from that of the first holes. The first holes at each of opposite ends of the row having the second hole are omitted, thereby defining an input waveguide and an output waveguide. The light source is adjacent to the input waveguide. The detector is adjacent to the output waveguide. | 06-18-2009 |
20100033955 | LIGHT GUIDE PLATES AND BACKLIGHT MODULE - A light guide plate includes a body having a bottom surface and a light output surface opposite to the bottom surface. A scattering structure is formed on the bottom surface. The scattering structure includes a plurality of scattering dots located in the form of a plurality of concentric shapes about the center. A backlight module using the light guide plate is also provided. | 02-11-2010 |
20100070060 | Method for designing a light guide plate and method for manufacturing the same - A method for designing a light guide plate includes the following steps. A raw light guide plate having a light input surface and a light output surface is provided. A region of the light input surface is divided into several annuluses according to a luminance distribution E(ρ,θ) of the light output surface. A scattering dots density D(ρ,θ) of each annulus on the light input surface is figured out. A total number N of the scattering dots of each annulus on the light input surface are gained, and the scattering dots is randomly distributed in the each annulus defined on the light input surface, whereby a designed light guide plate is obtained. | 03-18-2010 |
20100142224 | LIGHT GUIDE PLATES AND BACKLIGHT MODULE - A light guide plate includes a light discharge surface, a light diffusing surface, a light incident surface, and a plurality of scattering dots. The light diffusing surface is located opposite to the light discharge surface. The light diffusing surface has a first part and a second part. The first part is adjacent to a light source. The light incident surface intersects with the light discharge surface and the light diffusing surface. The scattering dots within the first part are arranged in the form of a plurality of concentric arcs, and the scattering dots within the second part are arranged in the form of a plurality of lines. | 06-10-2010 |
20100149787 | LIGHT GUIDE PLATES AND BACKLIGHT MODULE - A light guide plate includes a body having a bottom surface and a light output surface opposite to the bottom surface. A reflector is located on the light output surface opposite to the center of the bottom surface. The reflector is a cavity concaved from the light output surface to the inside of the body. A plurality of scattering dots are located on the bottom surface. The scattering dots are arranged in the form of a plurality of concentric circles around the center of the bottom surface. The number of the scattering dots is defined based on a radius of the circle they reside on, and the radius of the circle is greater than or substantially equal to 4 millimeter. | 06-17-2010 |
20110046922 | METHOD FOR DESIGNING A LIGHT GUIDE PLATE - The present disclosure relates to a method for designing a light guide plate. A raw light guide plate having a light input surface and light output surface opposite to the light input surface is provided. An illuminating surface having a shape and area same to that of the light output surface is built. The illuminating surface is divided into n×m illuminating areas, and the light input surface is divided into n×m scattering dots distributing areas corresponding to n×m illuminating areas. A number of original scattering dots are distributed on each scattering dots distributing areas. The original scattering dots are optimized. | 02-24-2011 |
20110090672 | LIGHT GUIDE PLATES AND BACKLIGHT MODULE - A light guide plate includes a body having a bottom surface, a top surface opposite to the bottom surface, and at least one lateral side. A recess is defined at the top surface. The recess is concaved toward the bottom surface and has a reflective surface. Only one part of the reflective surface has reflective structure located thereon. A backlight module using the light guide plate is related. | 04-21-2011 |
20110109839 | BACKLIGHT MODULE AND LIQUID CRYSTAL DISPLAY - A backlight module includes a light guide plate and at least two groups of light sources. The light guide plate includes at least two independent light guide modules optically isolated from each other. Each group of light sources is located corresponding to an independent light guide module and controlled independently. A liquid crystal display using the backlight module is also related. | 05-12-2011 |
20110254021 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a transparent conductive layer, a second electrode and a metal grating. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The transparent conductive layer is located on a surface of the second semiconductor layer away from the substrate. The second electrode is electrically connected to the transparent conductive layer. The metal grating is located on a surface of the transparent conductive layer away from the substrate. The metal grating is a two-dimensional array of a plurality of metal micro-structures. | 10-20-2011 |
20120026722 | LIGHT GUIDE PLATES AND BACKLIGHT MODULE - A light guide plate includes a body having a bottom surface and a light output surface opposite to the bottom surface. A scattering structure is formed on the bottom surface. The scattering structure includes a number of scattering dots located in the form of a number of concentric shapes around the center. The scattering dots adjacent to the center are arranged in a plurality of concentric circles. The scattering dots adjacent to the edge are arranged in a number of concentric quadrilaterals having a shape substantially corresponding to a shape of the light guide plate. A backlight module using the light guide plate is also provided. | 02-02-2012 |
20130327960 | SYSTEM FOR MEASURING LIGHT INTENSITY DISTRIBUTION - A system for measuring intensity distribution of light includes a carbon nanotube array located on a surface of a substrate, a reflector and an imaging element. The carbon nanotube array absorbs photons of a light source and radiates a visible light. The reflector is used to reflect the visible light, and the reflector is spaced from the carbon nanotube array. The carbon nanotube array is located between the reflector and the substrate. The imaging element is used to image the visible light. The imaging element is spaced from the substrate. | 12-12-2013 |
20130328076 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked in that sequence. A first electrode is electrically connected to the first semiconductor layer, and a second electrode is electrically connected to the second semiconductor layer. A first effective refractive index n | 12-12-2013 |
20130328079 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a first semiconductor layer, a active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer stacked in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A refractive index of the third optical symmetric layer or the fourth optical symmetric layer is in a range from about 1.2 to about 1.5. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. | 12-12-2013 |
20130328080 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer, a first electrode, and a second electrode. The first semiconductor layer includes a first surface and a second surface opposite to the first surface. The active layer, the second semiconductor layer, the third optical symmetric layer, the metallic layer, the fourth optical symmetric layer, and the first optical symmetric layer are stacked on the second surface in sequence. The first electrode covers and contacts the first surface. The second electrode is electrically connected with the second semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. | 12-12-2013 |
20130328081 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer, and a second optical symmetric layer stacked with other in the listed sequence. The light emitting diode further includes a first electrode electrically connected with the first semiconductor layer and a second electrode electrically connected with the second semiconductor layer. A refractive index of the third optical symmetric layer or the fourth optical symmetric layer is in a range from about 1.2 to about 1.5. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. A refractive difference between the second optical symmetric layer and the substrate is less than or equal to 0.1. | 12-12-2013 |
20130328082 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a source layer, a metallic plasma generating layer, a first optical symmetric layer, a second optical symmetric layer, a first electrode, and a second electrode. The source layer includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked on a surface of the substrate in series. The first electrode is electrically connected with the first semiconductor layer. The second electrode is electrically connected with the second semiconductor layer. The metallic plasma generating layer is disposed on a surface of the source layer away from the substrate. The first optical symmetric layer is disposed on a surface of the metallic plasma generating layer away from the substrate. The second optical symmetric layer is disposed on a surface of the first optical symmetric layer away from the substrate. | 12-12-2013 |
20130328083 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked in that sequence. A first effective refractive index n | 12-12-2013 |
20130328084 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked on the substrate in that sequence. A first electrode is electrically connected to the first semiconductor layer, and a second electrode is electrically connected to the second semiconductor layer. A first effective refractive index n | 12-12-2013 |
20130328085 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer stacked together. The active layer is on a surface of the first semiconductor layer. The second semiconductor layer is on a surface of the active layer away from the first semiconductor layer. The cermet layer is on a surface of the second semiconductor layer away from the first semiconductor layer. | 12-12-2013 |
20130328086 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a buffer layer, a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. The cermet layer is on the second semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130328087 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. The cermet layer is on the second semiconductor layer. A first electrode covers entire surface of the first semiconductor layer away from the active layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130328171 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, a metallic plasma generating layer, and a first optical symmetric layer stacked in series. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. | 12-12-2013 |
20130329213 | METHOD FOR MEASURING LIGHT INTENSITY DISTRIBUTION - A method for measuring intensity distribution of light includes a step of providing a carbon nanotube array located on a surface of a substrate. The carbon nanotube array has a top surface away from the substrate. The carbon nanotube array with the substrate is located in an inertia environment or a vacuum environment. A light source irradiates the top surface of the carbon nanotube array, to make the carbon nanotube array radiate a visible light. A reflector is provided, and the visible light is reflected by the reflector. An imaging element images the visible light reflected by the reflector, to obtain an intensity distribution of the light source. | 12-12-2013 |
20130330849 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. A first electrode is applied to electrically connected to the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer. | 12-12-2013 |
20130330859 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A buffer layer, a first semiconductor layer, an active layer, a second semiconductor layer are grown on the epitaxial growth surface in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer are then disposed on a surface of the second semiconductor layer away from the substrate in the listed sequence. The substrate and the buffer layer are removed to expose the first semiconductor layer. A first electrode is applied on an exposed surface of the first semiconductor layer and a second electrode is applied to electrically connect with the second semiconductor layer. | 12-12-2013 |
20130330860 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, a second semiconductor layer are grown on the epitaxial growth surface in the listed sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, a first optical symmetric layer, and a second optical symmetric layer are then disposed on a surface of the second semiconductor layer away from the substrate in the listed sequence. A first electrode is applied to electrically connect with the first semiconductor layer and a second electrode is applied to electrically connect with the second semiconductor layer. | 12-12-2013 |
20130330861 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in series. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A metallic plasma generating layer is then formed on a surface of the source layer away from the substrate. A first optical symmetric layer is then disposed on a surface of the metallic plasma generating layer. A first electrode is applied on an exposed surface of the first semiconductor layer. A second electrode is applied to electrically connect with the second semiconductor layer. | 12-12-2013 |
20130330862 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A metallic plasma generating layer is then formed on a surface of the source layer away from the substrate. A first optical symmetric layer is then disposed on a surface of the metallic plasma generating layer. a second optical symmetric layer is then disposed on a surface of the first symmetric layer away from the substrate. A first electrode is applied to electrically connect the first semiconductor layer. A second electrode is applied to electrically connect the second semiconductor layer. | 12-12-2013 |
20130330863 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer is formed on the second semiconductor layer. A metallic layer is applied on the first optical symmetric layer. A second optical symmetric layer is formed on the metallic layer. The substrate is removed. A first electrode is configured to cover entire exposed surface of the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130330864 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer is formed on the second semiconductor layer. A metallic layer is applied on the first optical symmetric layer. A second optical symmetric layer is formed on the metallic layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130330865 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. The substrate is removed to form an exposed surface. A first electrode is applied to cover the entire exposed surface of the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer. | 12-12-2013 |
20140008677 | LIGHT EMITTING DIODE - A light emitting diode includes a source layer, a metallic plasma generating layer, a first optical symmetric layer, a first electrode, and a second electrode. The source layer includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in series. The first semiconductor layer includes a first surface and a second surface opposite to the first surface. The first electrode covers and contacts the first surface. The second electrode is electrically connected with the second semiconductor layer. The metallic plasma generating layer is disposed on a surface of the source layer away from the first semiconductor layer. The first optical symmetric layer is disposed on a surface of the metallic plasma generating layer away from the first semiconductor layer. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. | 01-09-2014 |
20140124649 | OFF-AXIAL THREE-MIRROR SYSTEM - An off-axial three-mirror system includes a primary mirror, a secondary mirror, a tertiary mirror, and an image sensor. The secondary mirror is located on a reflective optical path of the primary mirror. The tertiary mirror is located on a reflective optical path of the secondary mirror. The image sensor is located on a reflecting optical path of the tertiary mirror. The primary mirror and the tertiary mirror are formed as one piece. The surface type of both the primary mirror and the tertiary mirror is a freeform surface. The primary mirror is a convex mirror, and the tertiary mirror is a concave mirror. | 05-08-2014 |
20140124657 | OFF-AXIAL THREE-MIRROR SYSTEM - An off-axial three-mirror system includes a primary mirror, a secondary mirror, a tertiary mirror, and an image sensor. The secondary mirror is located on a reflective optical path of the primary mirror. The tertiary mirror is located on a reflective optical path of the secondary mirror. The image sensor is located on a reflecting optical path of the tertiary mirror. The primary mirror and the tertiary mirror are formed as one piece. The surface type of both the primary mirror and the tertiary mirror is a freeform surface. | 05-08-2014 |
20140177665 | LASER - A laser includes a total reflective mirror, an output mirror, a discharge lamp, and an active laser medium. The total reflective mirror, the output mirror, and the discharge lamp define a resonant cavity. The active laser medium is filled in the resonant cavity. The total reflective mirror includes a body, a metal film, and at least one microstructure. The at least one microstructure is concaved from a first reflective surface of the total reflective mirror. The at least one microstructure has a depth and a lateral size, and both the depth and the lateral size are in a range from about 0.5λ to about 2λ, while λ is a working wavelength of the laser. | 06-26-2014 |
20140177666 | LASER - A laser includes a total reflective mirror, an output mirror, a discharge lamp, and an active laser medium. The total reflective mirror, the output mirror, and the discharge lamp define a resonant cavity. The active laser medium is filled in the resonant cavity. The total reflective mirror includes a microstructure. The microstructure is convex ring-shaped structure. The convex ring-shaped structure has a height and a width, and both the height and the width are in a range from about 0.5λ to about 2λ, while λ is a working wavelength of the laser. | 06-26-2014 |
20140177667 | LASER - A laser includes a total reflective mirror, an output mirror, a discharge lamp, and an active laser medium. The total reflective mirror, the output mirror, and the discharge lamp define a resonant cavity. The active laser medium is filled in the resonant cavity. The total reflective mirror includes a body, a metal film, and at least one microstructure. The at least one microstructure has a height and a lateral size, and both the height and the lateral size are in a range from about 0.5λ to about 2λ, while λ is a working wavelength of the laser. | 06-26-2014 |
20140294033 | LASER - A laser includes a total reflective mirror, an output mirror, a discharge lamp, and an active laser medium. The total reflective mirror, the output mirror, and the discharge lamp define a resonant cavity. The active laser medium is filled in the resonant cavity. The total reflective mirror includes a body, a metal film, and at least one microstructure. Each of the at least one microstructure is a step structure. The step structure includes a plurality of cylinders stacked with each other with respect to their diameters. Both the height and the diameter of the cylinders are in a range from about 0.5λ to about 2λ, while λ is a working wavelength of the laser. | 10-02-2014 |
20140294034 | LASER - A laser includes a total reflective mirror, an output mirror, a discharge lamp, and an active laser medium. The total reflective mirror, the output mirror, and the discharge lamp define a resonant cavity. The active laser medium is filled in the resonant cavity. The total reflective mirror includes a microstructure. The microstructure is concave ring-shaped structure. The concave ring-shaped structure has a depth and a width, and both the depth and the width are in a range from about 0.5λ to about 2λ, while λ is a working wavelength of the laser. | 10-02-2014 |