Patent application number | Description | Published |
20080227270 | LOW TEMPERATURE FUSION BONDING WITH HIGH SURFACE ENERGY USING A WET CHEMICAL TREATMENT - Described is a wet chemical surface treatment involving NH | 09-18-2008 |
20090311851 | NONVOLATILE MEMORY DEVICE USING SEMICONDUCTOR NANOCRYSTALS AND METHOD FORMING SAME - A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over said porous dielectric film, and anisotropically and selectively etching said deposited material. | 12-17-2009 |
20110129973 | NONVOLATILE MEMORY DEVICE USING SEMICONDUCTOR NANOCRYSTALS AND METHOD OF FORMING SAME - A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over the said porous dielectric film, and anisotropically and selectively etching the deposited material. | 06-02-2011 |
20110201182 | NONVOLATIVE MEMORY DEVICE USING SEMICONDUCTOR NANOCRYSTALS AND METHOD OF FORMING SAME - A method of making a uniform nanoparticle array, including performing diblock copolymer thin film self assembly over a first dielectric on silicon, creating a porous polymer film, transferring a pattern into the first dielectric, selectively growing epitaxial silicon off a silicon substrate from within pores to create a silicon nanoparticle array. | 08-18-2011 |
Patent application number | Description | Published |
20090162570 | APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE USING INDUCTIVELY COUPLED PLASMA TECHNOLOGY - The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently. | 06-25-2009 |
20100248435 | METHOD OF SELECTIVE NITRIDATION - Methods of forming semiconductor devices are provided herein. In some embodiments, a method of forming a semiconductor device may include providing a substrate having an oxide surface and a silicon surface; forming a nitrogen-containing layer on exposed portions of both the oxide and silicon surfaces; and oxidizing the nitrogen-containing layer to selectively remove the nitrogen-containing layer from atop the oxide surface. In some embodiments, an oxide layer is formed atop a remaining portion of the nitrogen-containing layer formed on the silicon feature. In some embodiments, the oxide surface is an exposed surface of a shallow trench isolate region (STI) disposed adjacent to one or more floating gates of a semiconductor device. In some embodiments, the silicon surface is an exposed surface of a silicon or polysilicon floating gate of a semiconductor device. | 09-30-2010 |
20100317186 | ENHANCING NAND FLASH FLOATING GATE PERFORMANCE - Embodiments described herein generally relate to flash memory devices and methods for manufacturing flash memory devices. In one embodiment, a method for selective removal of nitrogen from the nitrided areas of a substrate is provided. The method comprises positioning a substrate comprising a material layer disposed adjacent to an oxide containing layer in a processing chamber, exposing the substrate to a nitridation process to incorporate nitrogen onto the material layer and the exposed areas of the oxide containing layer, and exposing the nitrided material layer and the nitrided areas of the oxide containing layer to a gas mixture comprising a quantity of a hydrogen containing gas and a quantity of an oxygen containing gas to selectively remove nitrogen from the nitrided areas of the oxide containing layer relative to the nitrided material layer using a radical oxidation process. | 12-16-2010 |
20110011743 | LOW POWER RF TUNING USING OPTICAL AND NON-REFLECTED POWER METHODS - Aspects of the present invention include methods and apparatuses that may be used for monitoring and adjusting plasma in a substrate processing system by using a plasma data monitoring assembly. In one embodiment, an apparatus for monitoring a plasma in a substrate processing system is provided. The apparatus includes a plasma chamber having a plurality of walls, at least one of the plurality of walls having a dielectric ceiling, at least one inner coil element and at least one outer coil element disposed outside the chamber, a current sensor coupled to one of the inner coil element or the outer coil element, the current sensor adapted to detect current from an inductively coupled plasma generated in the plasma chamber, an RF power source, and one or more adjustable capacitors coupled to each of the one or more coil elements. | 01-20-2011 |
20110217834 | METHOD AND APPARATUS FOR SINGLE STEP SELECTIVE NITRIDATION - Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support. | 09-08-2011 |
20110263050 | LOW POWER RF TUNING USING OPTICAL AND NON-REFLECTED POWER METHODS - Aspects of the present invention include methods for controlling a plasma in a substrate processing system. One embodiment provides controlling a first set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within a chamber before processing a first set of one or more substrates, associating the first set of wavelength intensities of reflected electromagnetic radiation to an RF power within the processing system, adjusting a matching circuit based on the first set of wavelength intensities of reflected electromagnetic radiation, processing the first set of one or more substrates in the substrate processing system, controlling a second set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within the chamber, and associating the second set of wavelength intensities of reflected electromagnetic radiation to the RF power within the processing system. | 10-27-2011 |
20140273517 | NH3 CONTAINING PLASMA NITRIDATION OF A LAYER OF A THREE DIMENSIONAL STRUCTURE ON A SUBSTRATE - Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a first temperature; and exposing the first layer to an RF plasma formed from a process gas comprising ammonia (NH | 09-18-2014 |
20140342543 | METHOD AND APPARATUS FOR SINGLE STEP SELECTIVE NITRIDATION - Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support. | 11-20-2014 |