Gros D'Aillon
Eric Gros D'Aillon, Vourey FR
Patent application number | Description | Published |
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20110082659 | METHOD FOR PROCESSING DATA DERIVED FROM AN IONIZING RADIATION DETECTOR - Measurements of electric charges obtained by the impact of ionizing radiation on a semiconductor detector are grouped in a histogram. Calibrations and data otherwise obtained are used to obtain acceptance probabilities of measurements, which are used to construct a histogram of events by weighting the measurements so as to exclude the influence of some factors (such as diffused radiation) or on the contrary to enhance this influence. | 04-07-2011 |
20140326893 | IMAGER OF AN ISOTROPIC LIGHT SOURCE EXHIBITING ENHANCED DETECTION EFFICIENCY - A radiation imager including: a detector block including at least one detector configured to emit an optical signal from incident radiation to be imaged; a reading block that converts the optical signal into an electrical signal, including a plurality of photodetectors; a plurality of resin portions between the detector block and the photodetectors, in contact with the detector block and in contact with the photodetectors, the resin portions being separated by air, the resin portions including at least a part with cross-section increasing from the detector block to the reading block. | 11-06-2014 |
20140327098 | METHOD OF PRODUCING A RADIATION IMAGER EXHIBITING IMPROVED DETECTION EFFICIENCY - A radiation imager including: a reading block; a first substrate; a plurality of portions made from a first material with a first optical index between the first substrate and the reading block; a second material at a periphery of at least one of the portions, the second material having a second optical index lower than the first optical index; and areas made from a third material surrounding at least ends of the portions oriented on a same side as the reading block, the areas made from a third material obtained by applying a layer made from a third material to the reading block and penetration of the end of the at least one portion made from a first material in the layer made from a third material. | 11-06-2014 |
Eric Gros D'Aillon, Brie Et Angonnes FR
Patent application number | Description | Published |
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20090045345 | ELECTROMAGNETIC AND PARTICLE DETECTOR WITH REDUCED NUMBER OF CONNECTIONS - A detecting device comprises at least one 2-dimensional set of elementary sensors of the semiconductor type for transforming energy of radiation to be detected into electric signals. Each elementary sensor is provided on one side with an anode and on the opposite side with a cathode adapted to be electrically connected on a circuit for reading and operating on the signals. The anodes are electrically interconnected to constitute a plurality of anode subsets electrically connected at least in pairs to a measuring anode path looped on said reading and operating circuit. Each anode is connected to two separate measuring anode paths. The cathodes are electrically interconnected to constitute adjacent cathode subsets, each cathode subset being electrically connected to a measuring cathode path. The anodes belonging to two anode subsets and connected to a common anode path are associated with sensors whereof the cathodes belong to separate cathode subsets. | 02-19-2009 |
20100213382 | RADIATION DETECTION DEVICE - This device for the detection of ionizing radiation includes a stack integrating a first set of electrodes ( | 08-26-2010 |
Patrick Gros D'Aillon, Biviers FR
Patent application number | Description | Published |
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20120161269 | LOW-CROSSTALK FRONT-SIDE ILLUMINATED IMAGE SENSOR - A front-side illuminated image sensor, including photodetection regions, charge transfer elements, and an interconnection stack, all formed at the surface of a semiconductor substrate, microcavities being formed in the interconnection stack in front of the photodetection regions, microcavities being filled with materials forming color filters including metal pigments, regions of a material forming a barrier against ionic diffusion extending on the lateral walls of the microcavities. | 06-28-2012 |
20150035106 | BACK SIDE ILLUMINATION IMAGE SENSOR WITH LOW DARK CURRENT - An integrated circuit includes a back side illuminated image sensor formed by a substrate supporting at least one pixel, an interconnect part situated above a front side of the substrate and an anti-reflective layer situated above a back side of the substrate. The anti-reflective layer may be formed of a silicon nitride layer. An additional layer is situated above the anti-reflective layer. The additional layer is formed of one of amorphous silicon nitride or hydrogenated amorphous silicon nitride, in which the ratio of the number of silicon atoms per cubic centimeter to the number of nitrogen atoms per cubic centimeter is greater than 0.7. | 02-05-2015 |