Patent application number | Description | Published |
20080233517 | Negative Resists Based on Acid-Catalyzed Elimination of Polar Molecules - The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents. | 09-25-2008 |
20080265377 | AIR GAP WITH SELECTIVE PINCHOFF USING AN ANTI-NUCLEATION LAYER - A method of forming cavities within a semiconductor device is disclosed. The method comprises depositing an anti-nucleating layer on the interior surface of cavities within an ILD layer of the semiconductor device. This anti-nucleating layer prevents subsequently deposited dielectric layers from forming within the cavities. By preventing the formation of these layers, the capacitance is reduced, thereby resulting in improved semiconductor performance. | 10-30-2008 |
20090035668 | Method and materials for patterning a neutral surface - A self assembly step for the manufacture of an electronic component comprising, e.g., a semiconductor chip or semiconductor array or wafer comprises forming a diblock copolymer film placed on a random copolymer film substrate operatively associated with the electronic component and the diblock copolymer film wherein the surface energy of the random copolymer film is tailored by use of a photolithographic process prior to the self assembly step. By prior deterministic control over regional surface properties of the random copolymer film, domains of the diblock copolymer film form only in predefined areas. This approach offers simplified processing and a precise control of regions where domain formation occurs. Selective removal of some of the domains allows for further processing of the electronic component. | 02-05-2009 |
20090036717 | Precursors to Fluoroalkanol-Containing Olefin Monomers, and Associated Methods of Synthesis and Use - The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted α,β-unsaturated esters. The fluoroalkanol-substituted α,β-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors. | 02-05-2009 |
20090054700 | Precursors to Fluoroalkanol-Containing Olefin Monomers, and Associated Methods of Synthesis and Use - The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted α,β-unsaturated esters. The fluoroalkanol-substituted α,β-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors. | 02-26-2009 |
20090177017 | Precursors to Fluoroalkanol-Containing Olefin Monomers, and Associated Methods of Synthesis and Use - The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted α,β-unsaturated esters. The fluoroalkanol-substituted α,β-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors. | 07-09-2009 |
20090186234 | METHOD AND MATERIAL FOR A THERMALLY CROSSLINKABLE RANDOM COPOLYMER - A structure that comprises a substrate; a cross-linked random free radical copolymer on the substrate; and a self-assembled patterned diblock copolymer film on the random copolymer; wherein the random copolymer is energy neutral with respect to each block of the diblock copolymer film. A method of making the structure is provided. | 07-23-2009 |
20100239985 | Method for Using Compositions Containing Fluorocarbinols in Lithographic Processes - The present invention involves a method for generating a photoresist image on a substrate. The method comprises coating a substrate with a film comprising a polymer comprising fluorocarbinol monomers; imagewise exposing the film to radiation; heating the film to a temperature of, at, or below about 90° C. and developing the image. The present invention also relates to a method for generating a photoresist image on a substrate where a polymer comprising fluorocarbinol monomers is used as a protective top coat. | 09-23-2010 |
20110256359 | METHOD AND MATERIAL FOR A THERMALLY CROSSLINKABLE RANDOM COPOLYMER - A structure that comprises a substrate; a cross-linked random free radical copolymer on the substrate; and a self-assembled patterned diblock copolymer film on the random copolymer; wherein the random copolymer is energy neutral with respect to each block of the diblock copolymer film. A method of making the structure is provided. | 10-20-2011 |
20120037962 | SEMICONDUCTOR STRUCTURE HAVING A CONTACT-LEVEL AIR GAP WITHIN THE INTERLAYER DIELECTRICS ABOVE A SEMICONDUCTOR DEVICE AND A METHOD OF FORMING THE SEMICONDUCTOR STRUCTURE USING A SELF-ASSEMBLY APPROACH - Disclosed are embodiments of a semiconductor structure having a contact-level air gap within the interlayer dielectrics above a semiconductor device in order to minimize parasitic capacitances (e.g., contact-to-contact capacitance, contact-to-diffusion region capacitance, gate-to-contact capacitance, gate-to-diffusion region capacitance, etc.). Specifically, the structure can comprise a semiconductor device on a substrate and at least three dielectric layers stacked above the semiconductor device. An air gap is positioned with the second dielectric layer aligned above the semiconductor device and extending vertically from the first dielectric layer to the third dielectric layer. Also disclosed are embodiments of a method of forming such a semiconductor structure using a self-assembly approach. | 02-16-2012 |
20120109972 | SYSTEM AND METHOD FOR IDENTIFYING SIMILAR MOLECULES - A vectorization process is employed in which chemical identifier strings are converted into respective vectors. These vectors may then be searched to identify molecules that are identical or similar to each other. The dimensions of the vector space can be defined by sequences of symbols that make up the chemical identifier strings. The International Chemical Identifier (InChI) string defined by the International Union of Pure and Applied Chemistry (IUPAC) is particularly well suited for these methods. | 05-03-2012 |
20120156611 | Fluoroalcohol Containing Molecular Photoresist Materials and Processes of Use - Phenolic molecular glasses such as calixarenes include at least one fluoroalcohol containing unit. The fluoroalcohol containing molecular glasses can be used in photoresist compositions. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition. | 06-21-2012 |
20130122421 | HYBRID PHOTORESIST COMPOSITION AND PATTERN FORMING METHOD USING THEREOF - The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions. | 05-16-2013 |
20140048884 | DISPOSABLE CARBON-BASED TEMPLATE LAYER FOR FORMATION OF BORDERLESS CONTACT STRUCTURES - After formation of gate stacks, a carbon-based template layer is deposited over the gate stacks, and is optionally planarized to provide a planar top surface. A hard mask layer and a photoresist layer are subsequently formed above the carbon-based template layer. A pattern including openings is formed within the photoresist layer. The pattern is subsequently transferred through the hard mask layer and the carbon-based template layer with high selectivity to gate spacers to form self-aligned cavities within the carbon-based template layer. Contact structures are formed within the carbon-based template layer by a damascene method. The hard mask layer and the carbon-based template layer are subsequently removed selective to the contact structures. The contact structures can be formed as contact bar structures or contact via structures. Optionally, a contact-level dielectric layer can be subsequently deposited. | 02-20-2014 |
20140051239 | DISPOSABLE CARBON-BASED TEMPLATE LAYER FOR FORMATION OF BORDERLESS CONTACT STRUCTURES - After formation of gate stacks, a carbon-based template layer is deposited over the gate stacks, and is optionally planarized to provide a planar top surface. A hard mask layer and a photoresist layer are subsequently formed above the carbon-based template layer. A pattern including openings is formed within the photoresist layer. The pattern is subsequently transferred through the hard mask layer and the carbon-based template layer with high selectivity to gate spacers to form self-aligned cavities within the carbon-based template layer. Contact structures are formed within the carbon-based template layer by a damascene method. The hard mask layer and the carbon-based template layer are subsequently removed selective to the contact structures. The contact structures can be formed as contact bar structures or contact via structures. Optionally, a contact-level dielectric layer can be subsequently deposited. | 02-20-2014 |
20140072916 | HYBRID PHOTORESIST COMPOSITION AND PATTERN FORMING METHOD USING THEREOF - The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions. | 03-13-2014 |