Patent application number | Description | Published |
20090040653 | VARIABLE SPRING-FORCE MECHANISM FOR ADVANCING TAPE MEDIA CARTRIDGES IN A DEEP SLOT CELL - An apparatus to generate a spring force increasing in accordance with a quantity of tape media cartridges stored in a deep slot cell. The apparatus may include a deep slot cell, a biasing element including a torsion spring, and an advancement element. The deep slot cell may store one or more cartridges. The biasing element may generate a spring force toward the front of the deep slot cell such that the spring force generated increases in accordance with a number of cartridges stored in the cell. The advancement element may be positioned to apply the spring force to the cartridges, thereby advancing the cartridges toward the front of the deep slot cell. | 02-12-2009 |
20090213490 | PASS-THROUGH MECHANISM FOR LINEAR TAPE LIBRARY - A pass-through mechanism that couples a first linear tape library string to a second linear tape library string is maintained. A first robotic assembly associated with the first linear tape library string places a tape from the first linear tape library string into the pass-through mechanism. The pass-through mechanism moves the tape to a position where the tape can be removed by a second robotic assembly associated with the second linear tape library string. The second robotic assembly removes the tape from the pass-through mechanism and places the tape into the second linear tape library string. | 08-27-2009 |
20110224823 | PASS-THROUGH MECHANISM FOR LINEAR TAPE LIBRARY - A pass-through mechanism that couples a first linear tape library string to a second linear tape library string is maintained. A first robotic assembly associated with the first linear tape library string places a tape from the first linear tape library string into the pass-through mechanism. The pass-through mechanism moves the tape to a position where the tape can be removed by a second robotic assembly associated with the second linear tape library string. The second robotic assembly removes the tape from the pass-through mechanism and places the tape into the second linear tape library string. | 09-15-2011 |
20120148379 | PASS-THROUGH MECHANISM FOR LINEAR TAPE LIBRARY - A pass-through mechanism that couples a first linear tape library string to a second linear tape library string is maintained. A first robotic assembly associated with the first linear tape library string places a tape from the first linear tape library string into the pass-through mechanism. The pass-through mechanism moves the tape to a position where the tape can be removed by a second robotic assembly associated with the second linear tape library string. The second robotic assembly removes the tape from the pass-through mechanism and places the tape into the second linear tape library string. | 06-14-2012 |
20120259453 | PASS-THROUGH MECHANISM FOR LINEAR TAPE LIBRARY - A pass-through mechanism that couples a first linear tape library string to a second linear tape library string is maintained. A first robotic assembly associated with the first linear tape library string places a tape from the first linear tape library string into the pass-through mechanism. The pass-through mechanism moves the tape to a position where the tape can be removed by a second robotic assembly associated with the second linear tape library string. The second robotic assembly removes the tape from the pass-through mechanism and places the tape into the second linear tape library string. | 10-11-2012 |
20120259454 | PASS-THROUGH MECHANISM FOR LINEAR TAPE LIBRARY - A pass-through mechanism that couples a first linear tape library string to a second linear tape library string is maintained. A first robotic assembly associated with the first linear tape library string places a tape from the first linear tape library string into the pass-through mechanism. The pass-through mechanism moves the tape to a position where the tape can be removed by a second robotic assembly associated with the second linear tape library string. The second robotic assembly removes the tape from the pass-through mechanism and places the tape into the second linear tape library string. | 10-11-2012 |
20120265334 | PASS-THROUGH MECHANISM FOR LINEAR TAPE LIBRARY - A pass-through mechanism that couples a first linear tape library string to a second linear tape library string is maintained. A first robotic assembly associated with the first linear tape library string places a tape from the first linear tape library string into the pass-through mechanism. The pass-through mechanism moves the tape to a position where the tape can be removed by a second robotic assembly associated with the second linear tape library string. The second robotic assembly removes the tape from the pass-through mechanism and places the tape into the second linear tape library string. | 10-18-2012 |
Patent application number | Description | Published |
20090146191 | LOW LEAKAGE SCHOTTKY CONTACT DEVICES AND METHOD - Method and apparatus are described for semiconductor devices. The method ( | 06-11-2009 |
20100295100 | INTEGRATED CIRCUIT HAVING A BULK ACOUSTIC WAVE DEVICE AND A TRANSISTOR - A bulk GaN layer is on a first surface of a substrate, wherein the bulk GaN layer has a GaN transistor region and a bulk acoustic wave (BAW) device region. A source/drain layer is over a first surface of the bulk GaN layer in the GaN transistor region. A gate electrode is formed over the source/drain layer. A first BAW electrode is formed over the first surface of the bulk GaN layer in the BAW device region. An opening is formed in a second surface of the substrate, opposite the first surface of the substrate, which extends through the substrate and exposes a second surface of the bulk GaN layer, opposite the first surface of the bulk GaN layer. A second BAW electrode is formed within the opening over the second surface of the bulk GaN layer. | 11-25-2010 |
20110156051 | SEMICONDUCTOR DEVICES WITH LOW LEAKAGE SCHOTTKY CONTACTS - Embodiments include semiconductor devices with low leakage Schottky contacts. An embodiment is formed by providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the first mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced. | 06-30-2011 |
20120156843 | DIELECTRIC LAYER FOR GALLIUM NITRIDE TRANSISTOR - A dielectric layer for a gallium nitride transistor is disclosed. In one example, the dielectric layer has a hydrogen content of less than or equal to 10% by atomic percentage. In one example, both a dielectric layer formed before a conductive electrode of the transistor and a dielectric layer formed after the conductive elective electrode have a hydrogen content of less than or equal to 10% by atomic percentage. In one example, the dielectric layer formed before the conductive electrode is formed by a LPCVD process and the dielectric layer formed after the conductive electrode is formed by a sputtering process. | 06-21-2012 |
20120175777 | DEVICE HAVING CONDUCTIVE SUBSTRATE VIA WITH CATCH-PAD ETCH-STOP - An electronic device ( | 07-12-2012 |
20130015462 | TRANSISTORS WITH DUAL LAYER PASSIVATION - Semiconductor devices are provided with dual passivation layers. A semiconductor layer is formed on a substrate and covered by a first passivation layer (PL- | 01-17-2013 |
20130092947 | SEMICONDUCTOR DEVICE AND METHOD OF MAKING - In some embodiments, a metal insulator semiconductor heterostructure field effect transistor (MISHFET) is disclosed that has a source, a drain, an insulation layer, a gate dielectric, and a gate. The source and drain are on opposing sides of a channel region of a channel layer. The channel region is an upper portion of the channel layer. The channel layer comprises gallium nitride. The insulation layer is over the channel layer and has a first portion and a second portion. The first portion is nearer the drain than the source and has a first thickness. The second portion is nearer the source than drain and has the first thickness. The insulation layer has an opening through the insulation layer. The opening is between the first portion and the second portion. | 04-18-2013 |
20130157456 | METHODS RELATING TO THE FABRICATION OF DEVICES HAVING CONDUCTIVE SUBSTRATE VIAS WITH CATCH-PAD ETCH-STOPS - An electronic device having a conductive substrate via extending between a conductor on a rear face and a conductor over a front face of the substrate includes a multi-layered etch-stop beneath the front surface conductor. The etch-stop permits use of a single etchant to penetrate both the substrate and any overlying semiconductor and/or dielectric without attacking the overlying front surface conductor. This is especially important when the semiconductor and dielectric are so thin as to preclude changing etchants when these regions are reached during etching. The etch-stop is preferably a stack of N≧2 pairs of sub-layers, where a first sub-layer comprises stress relieving and/or adhesion promoting material (e.g., Ti), and the second sub-layer comprises etch resistant material (e.g., Ni). In a further embodiment, where the device includes field effect transistors having feedback sensitive control gates, the etch-stop material is advantageously used to form gate shields. | 06-20-2013 |
20130277680 | High Speed Gallium Nitride Transistor Devices - A low leakage current switch device ( | 10-24-2013 |
20130341678 | Semiconductor Device with Selectively Etched Surface Passivation - A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel. The second dielectric layer is patterned such that the first dielectric layer is disposed on the surface of the semiconductor substrate in a second area over the channel. | 12-26-2013 |
20130341679 | Semiconductor Device with Selectively Etched Surface Passivation - A semiconductor device includes a semiconductor substrate configured to include a channel, first and second ohmic contacts supported by the semiconductor substrate, in ohmic contact with the semiconductor substrate, and spaced from one another for current flow between the first and second ohmic contacts through the channel, and first and second dielectric layers supported by the semiconductor substrate. At least one of the first and second ohmic contacts extends through respective openings in the first and second dielectric layers. The second dielectric layer is disposed between the first dielectric layer and a surface of the semiconductor substrate, and the second dielectric layer includes a wet etchable material having an etch selectivity to a dry etchant of the first dielectric layer. | 12-26-2013 |
20140061659 | GaN Dual Field Plate Device with Single Field Plate Metal - A low leakage current transistor ( | 03-06-2014 |
20140087550 | METHODS OF MAKING SEMICONDUCTOR DEVICES WITH LOW LEAKAGE SCHOTKYCONTACTS - Embodiments include methods of making semiconductor devices with low leakage Schottky contacts. An embodiment includes providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced. | 03-27-2014 |
20140239346 | MISHFET AND SCHOTTKY DEVICE INTEGRATION - A semiconductor device includes a substrate comprising a heterostructure configured to support formation of a channel during operation, first and second dielectric layers supported by the substrate, the second dielectric layer being disposed between the first dielectric layer and the substrate, a gate supported by the substrate, disposed in a first opening in the first dielectric layer, and to which a bias voltage is applied during operation to control current flow through the channel, the second dielectric layer being disposed between the gate and the substrate, and an electrode supported by the substrate, disposed in a second opening in the first and second dielectric layers, and configured to establish a Schottky junction with the substrate. | 08-28-2014 |
20150123168 | MISHFET AND SCHOTTKY DEVICE INTEGRATION - A semiconductor device includes a substrate comprising a heterostructure configured to support formation of a channel during operation, first and second dielectric layers supported by the substrate, the second dielectric layer being disposed between the first dielectric layer and the substrate, a gate supported by the substrate, disposed in a first opening in the first dielectric layer, and to which a bias voltage is applied during operation to control current flow through the channel, the second dielectric layer being disposed between the gate and the substrate, and an electrode supported by the substrate, disposed in a second opening in the first and second dielectric layers, and configured to establish a Schottky junction with the substrate. | 05-07-2015 |
20150132932 | SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION - A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel. The second dielectric layer is patterned such that the first dielectric layer is disposed on the surface of the semiconductor substrate in a second area over the channel. | 05-14-2015 |
20150137135 | SEMICONDUCTOR DEVICES WITH INTEGRATED SCHOTKY DIODES AND METHODS OF FABRICATION - An embodiment of a semiconductor device includes a semiconductor substrate that includes an upper surface and a channel, a gate electrode disposed over the substrate electrically coupled to the channel, and a Schottky metal layer disposed over the substrate adjacent the gate electrode. The Schottky metal layer includes a Schottky contact electrically coupled to the channel which provides a Schottky junction and at least one alignment mark disposed over the semiconductor substrate. A method for fabricating the semiconductor device includes creating an isolation region that defines an active region along an upper surface of a semiconductor substrate, forming a gate electrode over the semiconductor substrate in the active region, and forming a Schottky metal layer over the semiconductor substrate. Forming the Schottky metal layer includes forming at least one Schottky contact electrically coupled to the channel and providing a Schottky junction, and forming an alignment mark in the isolation region. | 05-21-2015 |
20150294921 | SEMICONDUCTOR DEVICES WITH A THERMALLY CONDUCTIVE LAYER AND METHODS OF THEIR FABRICATION - An embodiment of a semiconductor device includes a semiconductor substrate that includes a host substrate and an upper surface, an active area, a substrate opening in the semiconductor substrate that is partially defined by a recessed surface, and a thermally conductive layer disposed over the semiconductor substrate that extends between the recessed surface and a portion of the semiconductor substrate within the active area. A method for fabricating the semiconductor device includes defining an active area, forming a gate electrode over a channel in the active area, forming a source electrode and a drain electrode in the active area on opposite sides of the gate electrode, etching a substrate opening in the semiconductor substrate that is partially defined by the recessed surface, and depositing a thermally conductive layer over the semiconductor substrate that extends between the recessed surface and a portion of the semiconductor substrate over the channel. | 10-15-2015 |
20150295075 | High Speed Gallium Nitride Transistor Devices - A low leakage current switch device ( | 10-15-2015 |