Gourdel
Chirstophe Gourdel, Saint Maximin FR
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20130045583 | METHOD FOR MEASURING DEFECTS IN A SILICON SUBSTRATE - A method for measuring defects in a silicon substrate obtained by silicon ingot pulling, wherein the defects have a size of less than 20 nm. The method includes applying a first defect consolidation heat treatment to the substrate at a temperature of between 750 and 850° C. for a time of between 30 minutes and 1 hour to consolidate the defects; applying a second defect enlargement heat treatment to the substrate at a temperature of between 900 and 1000° C. for a time of between 1 hour and 10 hour to enlarge the defects to a size of greater than or equal to 20 nm, with the enlarged defects containing oxygen precipitates; measuring size and density of the enlarged defects in a surface layer of the substrate; and calculating the initial size of the defects on the basis of the measurements of the enlarged defects. | 02-21-2013 |
Christophe Gourdel, Saint Maximin FR
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20130026663 | METHOD FOR CURING DEFECTS IN A SEMICONDUCTOR LAYER - A method for curing defects associated with the implantation of atomic species into a semiconductor layer transferred onto a receiver substrate, wherein the semiconductor layer is thermally insulated from the receiver substrate by a low thermal conductivity layer having thermal conductivity that is lower than that of the transferred semiconductor layer. The method includes applying a selective electromagnetic irradiation to the semiconductor layer to heat that layer to a temperature lower than its temperature of fusion to cure defects without causing an increase in the temperature of the receiver substrate beyond 500° C. | 01-31-2013 |
20140339681 | METHOD FOR FABRICATING A COMPOSITE STRUCTURE TO BE SEPARATED BY EXFOLIATION - The invention relates to a method for fabricating a composite structure comprising a layer to be separated by irradiation, the method comprising the formation of a stack containing: | 11-20-2014 |
Marie-Edith Gourdel, Savigny Le Temple FR
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20090062284 | Thio-Substituted Biarylmethanesulfinyl Derivatives - The present invention is related to chemical compositions, processes for the preparation thereof and uses of the composition. Particularly, the present invention relates to compositions that include substituted biaryl-methanesulfinyl acetamides of Formula (I): | 03-05-2009 |
20110046102 | AZABICYCLIC COMPOUNDS, PREPARATION THEREOF AND USE OF SAME AS DRUGS, ESPECIALLY BETA-LACTAMASE INHIBITORS - The invention concerns the compounds meeting formula (I: | 02-24-2011 |
20140371247 | Selective and Reversible Inhibitors of Ubiquitin Specific Protease 7 - The present invention relates to quinazolin-4-one compounds of formula (I′), their process of preparation and uses thereof. These compounds are useful as selective and reversible inhibitors of ubiquitin specific proteases, particularly USP7, for treating e.g. cancer, neurodegenerative diseases, inflammatory disorders and viral infections. | 12-18-2014 |
Marie-Edith Gourdel, Romainville FR
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20100087648 | NOVEL NITROGEN-CONTAINING HETEROCYCLIC COMPOUNDS, THEIR PREPARATION AND THEIR USE AS ANTIBACTERIAL DRUGS - The invention relates to nitrogen-containing heterocyclic compounds of general formula (I) | 04-08-2010 |
20100093784 | NOVEL HETEROCYCLIC NITROGENOUS COMPOUNDS, THEIR PREPARATION AND THEIR USE AS ANTIBACTERIAL MEDICAMENTS - The invention relates to nitrogenous heterocyclic compounds of formula | 04-15-2010 |