Patent application number | Description | Published |
20100019266 | Arrangement for Generating Mixed Light and Method for Producing Such an Arrangement - An arrangement and a method for producing such an arrangement serve for generating mixed light. In this case, a semiconductor chip that emits an electromagnetic primary radiation has a luminescence conversion element in the beam path of the primary radiation. Furthermore, the arrangement includes a connecting element and a carrier element, wherein the carrier element carries and shapes the luminescence conversion element and the connecting element. | 01-28-2010 |
20100220396 | Optical Device, Method of Producing the Device and Optoelectronic Component Comprising the Device - An optical device having a specific form is provided that includes a resin molding compound having an adhesion-reducing, chemically modified surface layer. | 09-02-2010 |
20110260193 | Method for Producing a Luminescence Conversion Element, Luminescence Conversion Element and Optoelectronic Component - A method is provided for producing a luminescence conversion element ( | 10-27-2011 |
20120326186 | Method for Producing a Luminescence Conversion Element, Luminescence Conversion Element and Optoelectronic Component - A method is provided for producing a luminescence conversion element ( | 12-27-2012 |
20130193470 | Optoelectronic Component and Method for Producing an Optoelectronic Component - An optoelectronic component includes a protective layer including a material containing hydrophobic groups. Furthermore, a method is described, by means of which an optoelectronic component can be produced, and in which a protective layer including hydrophobic groups is applied. | 08-01-2013 |
20130293097 | LIGHTING DEVICE WITH LED CHIP AND PROTECTIVE CAST - The lighting device has at least one LED chip that is potted by means of a potting compound, which potting compound has a light-transmissive, castable and curable matrix material comprising scattering volumes as filler material, wherein the scattering volumes are distributed inhomogeneously over a thickness of the potting compound and these scattering volumes have a lower density than the matrix material in its castable state. A method is used for producing a lighting device, which comprises at least one LED chip, by means of at least the following steps: potting the at least one LED chip by means of a potting compound containing scattering volumes, wherein the scattering volumes have a lower density than a matrix material of the potting compound in this state; curing the potting compound so that an inhomogeneous distribution of the scattering volumes is obtained owing to floating of the scattering volumes in the matrix material. | 11-07-2013 |
20130309437 | METHOD FOR PRODUCING AN OPTICAL ELEMENT - A method for producing a luminescent material element which is configured for conversion of pump light is provided. The method may include: providing a polysilazane solution; bringing the polysilazane solution in contact with a luminescent material; and partially curing the polysilazane solution. | 11-21-2013 |
20140159093 | Carrier, Optoelectronic Unit Comprising a Carrier and Methods for the Production of Both - A carrier for an optoelectronic unit has a carrier material which includes polyethylene terephthalate which contains reflector particles and a further filler. Methods for the production of the optoelectronic unit and the carrier are also disclosed. | 06-12-2014 |
20140247605 | METHOD FOR PRODUCING AN OPTICAL ELEMENT - A method for producing an optical element made of quartz glass, said element being designed for a conversion of pump light, may include providing a sol having a silicon precursor, admixing the sol with at least one luminescent substance and one luminescent substance educt, gelling the sol to form a gel body, and sintering the gel body to form a quartz glass solid. | 09-04-2014 |
20140264422 | Optoelectronic Semiconductor Component and Conversion Element - In at least one embodiment, an optoelectronic semiconductor component includes an optoelectronic semiconductor chip. The semiconductor component includes a conversion element that is arranged to convert at least some radiation emitted by the semiconductor chip into radiation of a different wavelength. The conversion element comprises at least one luminescent substance and scattering particles and also at least one matrix material. The scattering particles are embedded in the matrix material. A difference in the refractive index between the matrix material and a material of the scattering particles at a temperature of 300 K is at the most 0.15. The difference in the refractive index between the matrix material and the material of the scattering particles at a temperature of 380 K is greater than at a temperature of 300 K. | 09-18-2014 |
20150014711 | OPTOELECTRONIC COMPONENT WITH INERT GAS ATMOSPHERE - Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas. | 01-15-2015 |