Patent application number | Description | Published |
20140026855 | Split-Cycle, Reactivity Controlled Compression Ignition Engine and Method - An internal combustion engine includes a first cylinder having an intake valve in fluid communication with an intake manifold, and a second cylinder having an exhaust valve in fluid communication with an exhaust manifold. A transfer passage fluidly connects the first cylinder with the second cylinder. A first fuel injector is configured to provide a first fuel to the first cylinder, and a second fuel injector is configured to provide a second fuel to the second cylinder. The first cylinder operates, at times, to push a first air/fuel mixture through the transfer passage into the second cylinder. The second fuel injector is configured to provide at least one fuel injection plume into the first air/fuel mixture. | 01-30-2014 |
20140026859 | Reactivity Controlled Compression Ignition Engine with Exhaust Gas Recirculation - An internal combustion engine is configured to utilize a reactivity controlled compression ignition process and an exhaust gas recirculation (“EGR”) system. The EGR system directs a portion of the exhaust gasses from the exhaust system to the air intake system. The engine system is adapted to introduce a first fuel charge having a first reactivity to a combustion chamber at a first time during the intake-compression cycle of the engine. The engine system is also adapted to introduce a second fuel charge having a second reactivity at a second time during the intake-compression cycle to generate stratified regions of different reactivity in the combustion chamber. A controller operatively associated with the engine can monitor one or more operating parameters and can adjust either the EGR system and/or the second introduction of the second fuel charge based in part upon the operating parameter. | 01-30-2014 |
20140032080 | Reactivity Controlled Compression Ignition Engine with Intake Cooling Operating on a Miller Cycle and Method - An internal combustion engine includes at least one cylinder, an intake system, and an exhaust system. At least one engine cooler is disposed to cool intake air that enters or exits the at least one cylinder. A first fuel injector is disposed to inject a first fuel into the cylinder, and a second fuel injector is disposed to inject a second fuel into said cylinder. At least one intake valve of said cylinder is configured to open and close with a variable timing in accordance with a Miller thermodynamic cycle. An electronic controller is disposed to monitor and receive at least one input signal indicative of the operating conditions of the internal combustion engine, and adjust at least one of engine valve timing, operation of the first fuel injector, and operation of the second fuel injector in response to that signal. | 01-30-2014 |
20140032081 | Dual Mode Engine Using Two or More Fuels and Method for Operating Such Engine - An internal combustion engine includes a first fuel injector configured to inject a first fuel into an engine cylinder in response to a first injection signal, a second fuel injector configured to inject a second fuel into the engine cylinder in response to a second injection signal, and a third fuel injector configured to inject a third fuel into the engine cylinder in response to a third injection signal. The first, second and third fuels have different reactivities. An electronic controller provides, as appropriate, first, second and third injection signals using an engine speed and an engine load signals as primary control parameters such that the engine operates in at least two different combustion modes. | 01-30-2014 |
20140032082 | Reactivity Controlled Compression Ignition Engine Operating on a Miller Cycle with Low Pressure Loop Exhaust Gas Recirculation System and Method - An internal combustion engine includes at least one cylinder having a reciprocable piston, an intake system directing intake air to the at least one cylinder, and an exhaust system directing exhaust gasses from the at least one cylinder. A first fuel injector disposed to inject a first fuel into the cylinder, and a second fuel injector disposed to inject a second fuel into said cylinder. At least one intake valve of said cylinder is configured to open and close with a variable timing in accordance with a Miller thermodynamic cycle. An exhaust gas recirculation system, provides exhaust gas to said cylinder through the intake valve. An electronic controller is disposed to monitor and receive at least one input signal indicative of the operating conditions of the internal combustion engine, and adjusts at least the amount of exhaust gas recirculation. | 01-30-2014 |
20140032084 | Temperature-Controlled Combustion System and Method - An internal combustion engine system is configured to operate using a first fuel of a first reactivity and a second fuel of a second reactivity. The engine system measures an operating parameter of the internal combustion system. The engine system further introduces to a combustion chamber of the engine system and combusts therein the first fuel and the second fuel during high temperature/speed (HTS) conditions. The engine system also introduces to the combustion chamber and combusts primarily only one of the first fuel or second fuel during a low temperature/speed (LTS) condition. | 01-30-2014 |
20140158088 | Temperature-Controlled Exhaust Gas Recirculation System and Method for Dual Fuel Engine - Systems and methods for operating an engine include controlling a temperature of recirculated exhaust gas to achieve a predetermined recirculated exhaust gas temperature. A mixture of air and temperature-controlled recirculated exhaust gas are admitted in a combustion chamber and a gaseous fuel injector delivers gaseous fuel during an intake stroke. A diesel fuel injector is activated for a first time to deliver a pre-pilot diesel quantity directly into the combustion chamber at an early stage of a compression stroke, and is activated again for a second time to deliver a pilot diesel quantity directly into the combustion chamber at a later stage of the compression stroke. A total air/fuel ratio within the combustion chamber upon completion of the second diesel fuel injector activation is lean. The air/fuel mixture is combusted during a combustion stroke, and combustion products are removed during an exhaust stroke. | 06-12-2014 |
Patent application number | Description | Published |
20110193115 | LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING - Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material. | 08-11-2011 |
20110210353 | LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING - Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment. | 09-01-2011 |
20110217800 | METHOD FOR FORMING A LIGHT CONVERSION MATERIAL - A method and system for manufacturing a light conversion structure for a light emitting diode (LED) is disclosed. The method includes forming a transparent, thermally insulating cover over an LED chip. The method also includes dispensing a conversion material onto the cover to form a conversion coating on the cover, and encapsulating the LED, the silicone cover, and the conversion coating within an encapsulant. Additional covers and conversion coatings can be added. | 09-08-2011 |
20110233581 | SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material. | 09-29-2011 |
20120012812 | SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATIONS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures. | 01-19-2012 |
20120013273 | SOLID STATE LIGHTING DEVICES WITHOUT CONVERTER MATERIALS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength. | 01-19-2012 |
20120056206 | SOLID STATE LIGHTING DIES WITH QUANTUM EMITTERS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material. | 03-08-2012 |
20120298950 | LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND METHODS OF MANUFACTURING - Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device. | 11-29-2012 |
20120329191 | SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATIONS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures. | 12-27-2012 |
20130005065 | SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material. | 01-03-2013 |
20130049043 | ENGINEERED SUBSTRATES FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS - Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light. | 02-28-2013 |
20130168719 | METHOD FOR FORMING A LIGHT CONVERSION MATERIAL - A method and system for manufacturing a light conversion structure for a light emitting diode (LED) is disclosed. The method includes forming a transparent, thermally insulating cover over an LED chip. The method also includes dispensing a conversion material onto the cover to form a conversion coating on the cover, and encapsulating the LED, the silicone cover, and the conversion coating within an encapsulant. Additional covers and conversion coatings can be added. | 07-04-2013 |
20130181219 | SEMICONDUCTOR GROWTH SUBSTRATES AND ASSOCIATED SYSTEMS AND METHODS FOR DIE SINGULATION - Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street. | 07-18-2013 |
20130342133 | SOLID STATE LIGHTING DEVICES WITHOUT CONVERTER MATERIALS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength. | 12-26-2013 |
20140077222 | Gallium Nitride Devices with Aluminum Nitride Alloy Intermediate Layer - The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. | 03-20-2014 |
20140097441 | DEVICES, SYSTEMS, AND METHODS RELATED TO REMOVING PARASITIC CONDUCTION IN SEMICONDUCTOR DEVICES - Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate. | 04-10-2014 |
20140097446 | Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer - The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. | 04-10-2014 |
20140131659 | Gallium Nitride Devices With Aluminum Nitride Intermediate Layer - The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. | 05-15-2014 |
20140246683 | SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATIONS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures. | 09-04-2014 |
20140319536 | SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material. | 10-30-2014 |
20140353680 | Gallium Nitride Semiconductor Structures With Compositionally-Graded Transition Layer - The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. | 12-04-2014 |
20150028347 | LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING - Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material. | 01-29-2015 |
20150108495 | Gallium Nitride Devices with Discontinuously Graded Transition Layer - The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. | 04-23-2015 |
20150155440 | SEMICONDUCTOR GROWTH SUBSTRATES AND ASSOCIATED SYSTEMS AND METHODS FOR DIE SINGULATION - Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street. | 06-04-2015 |
20150187880 | Semiconductor Structure with Compositionally-Graded Transition Layer - The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. | 07-02-2015 |
20150287792 | III-Nitride Based Semiconductor Structure - The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. | 10-08-2015 |
20150318388 | DEVICES, SYSTEMS, AND METHODS RELATED TO REMOVING PARASITIC CONDUCTION IN SEMICONDUCTOR DEVICES - Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate. | 11-05-2015 |
20160027957 | LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND METHODS OF MANUFACTURING - Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device. | 01-28-2016 |
Patent application number | Description | Published |
20100090827 | Location based proximity alert - A method of location based proximity alert retrieves, from a location based proximity alert physical server, a current location of wireless client devices and determines if it is within a given area. The method accesses, from the location based proximity alert physical server, a physical law enforcement database comprising a restraining order target identifier and a restraining order limit identifier. A geo-proximity alert message is transmitted if the current location of the restraining order target identifier matches the restraining order limit identifier. | 04-15-2010 |
20100093371 | Location based geo-reminders - Location based geo-reminding system retrieves, from a location based geo-reminder physical server, a current location of wireless client devices within a given area. The method accesses, from the location based geo-reminder physical server, a physical location based geo-reminder database comprising an identity of a trigger identifier and a limits of trigger identifier. Transmission of a location based geo-reminder message is initiated if the current location of a particular wireless client device is within a limits of restriction distance from a location of the identity of the trigger. | 04-15-2010 |
20130059608 | Aggregate location dynometer (ALD) - An Aggregate Location Dynometer (ALD) in a physical wireless network alerts to a problematic crowd risk using location based services (LBS). An Aggregate Location Dynometer (ALD) comprises a Network Monitor, a Crowd Risk Determinant and an Alert Module. The Network Monitor monitors wireless traffic for a potential viral event, associated with a formation of a plurality of wireless devices. The Crowd Risk Determinant requests location information associated with a plurality of wireless devices in a given area regarding a respective viral event. The Crowd Risk Determinant determines if the viral event also indicates a crowd safety risk, based on the shape and movement of observed wireless devices. The Alert Module triggers an alert of an impending crowd problem when crowd risk is above a given threshold. Historical databases are empirically determined and maintained in the Aggregate Location Dynometer (ALD) for use in viral event and crowd risk assessment. | 03-07-2013 |
20140002262 | Location Based Proximity Alert | 01-02-2014 |
20140155105 | Aggregate Location Dynometer (ALD) - An Aggregate Location Dynometer (ALD) in a physical wireless network alerts to a problematic crowd risk using location based services (LBS). An Aggregate Location Dynometer (ALD) comprises a Network Monitor, a Crowd Risk Determinant and an Alert Module. The Network Monitor monitors wireless traffic for a potential viral event, associated with a formation of a plurality of wireless devices. The Crowd Risk Determinant requests location information associated with a plurality of wireless devices in a given area regarding a respective viral event. The Crowd Risk Determinant determines if the viral event also indicates a crowd safety risk, based on the shape and movement of observed wireless devices. The Alert Module triggers an alert of an impending crowd problem when crowd risk is above a given threshold. Historical databases are empirically determined and maintained in the Aggregate Location Dynometer (ALD) for use in viral event and crowd risk assessment. | 06-05-2014 |
20150057029 | Location Based Geo-Reminders - Location based geo-reminding system retrieves, from a location based geo-reminder physical server, a current location of wireless client devices within a given area. The method accesses, from the location based geo-reminder physical server, a physical location based geo-reminder database comprising an identity of a trigger identifier and a limits of trigger identifier. Transmission of a location based geo-reminder message is initiated if the current location of a particular wireless client device is within a limits of restriction distance from a location of the identity of the trigger. | 02-26-2015 |
20160044461 | Aggregate Location Dynometer (ALD) - An Aggregate Location Dynometer (ALD) in a physical wireless network alerts to a problematic crowd risk using location based services (LBS). An Aggregate Location Dynometer (ALD) comprises a Network Monitor, a Crowd Risk Determinant and an Alert Module. The Network Monitor monitors wireless traffic for a potential viral event, associated with a formation of a plurality of wireless devices. The Crowd Risk Determinant requests location information associated with a plurality of wireless devices in a given area regarding a respective viral event. The Crowd Risk Determinant determines if the viral event also indicates a crowd safety risk, based on the shape and movement of observed wireless devices. The Alert Module triggers an alert of an impending crowd problem when crowd risk is above a given threshold. Historical databases are empirically determined and maintained in the Aggregate Location Dynometer (ALD) for use in viral event and crowd risk assessment. | 02-11-2016 |