Patent application number | Description | Published |
20100108502 | Sputtering Target and Oxide Semiconductor Film - A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa | 05-06-2010 |
20100127256 | SEMICONDUCTOR THIN FILM, SEMICONDUCTOR THIN FILM MANUFACTURING METHOD AND SEMICONDUCTOR ELEMENT - An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method. | 05-27-2010 |
20110006297 | PATTERNED CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING THIN FILM TRANSISTOR AND FIELD EFFECT TRANSISTOR - A patterned crystalline semiconductor thin film which is obtained by a method including: forming an amorphous thin film comprising indium oxide as a main component, crystallizing part of the amorphous thin film to allow the part to be semiconductive, and removing an amorphous part of the partially crystallized thin film by etching. | 01-13-2011 |
20110050733 | THIN FILM TRANSISTOR MANUFACTURING METHOD, THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE AND IMAGE DISPLAY APPARATUS, IMAGE DISPLAY APPARATUS AND SEMICONDUCTOR DEVICE - To provide a method for producing a thin film transistor improved in stability, uniformity, reproducibility, heat resistance, durability or the like, a thin film transistor, a thin film transistor substrate, an image display apparatus, an image display apparatus and a semiconductor device. | 03-03-2011 |
20110168994 | SPUTTERING TARGET FOR OXIDE THIN FILM AND PROCESS FOR PRODUCING THE SPUTTERING TARGET - Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)<0.75 | 07-14-2011 |
20110180763 | OXIDE SINTERED BODY AND SPUTTERING TARGET - An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In | 07-28-2011 |
20110198586 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME - A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film. | 08-18-2011 |
20110243835 | INDIUM OXIDE SINTERED COMPACT AND SPUTTERING TARGET - A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio “(total of the one or more metals)/(total of the one or more metals and indium)×100)” of 0.001% or more and less than 45%. | 10-06-2011 |
20110260157 | SEMICONDUCTOR DEVICE, THIN FILM TRANSISTOR AND A METHOD FOR PRODUCING THE SAME - A semiconductor device, a thin film transistor, and a method for producing the same capable of decreasing the management cost, and capable of decreasing the production steps to reduce the production cost are proposed. A method for producing a thin film transistor | 10-27-2011 |
20140001040 | SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM | 01-02-2014 |
20140167033 | OXIDE SINTERED BODY AND SPUTTERING TARGET - An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In | 06-19-2014 |
20140339073 | Sputtering Target and Oxide Semiconductor Film - A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa | 11-20-2014 |