Patent application number | Description | Published |
20100015783 | METHOD OF CUTTING AN OBJECT TO BE PROCESSED - A method of cutting an object which can accurately cut the object is provided. An object to be processed | 01-21-2010 |
20100055876 | Laser processing method and laser processing apparatus - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 03-04-2010 |
20100176100 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 07-15-2010 |
20100203707 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 08-12-2010 |
20110021004 | METHOD OF CUTTING A SUBSTRATE, METHOD OF CUTTING A WAFER-LIKE OBJECT, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 01-27-2011 |
20110027971 | METHOD OF CUTTING A SUBSTRATE, METHOD OF PROCESSING A WAFER-LIKE OBJECT, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 02-03-2011 |
20110027972 | METHOD OF CUTTING A SUBSTRATE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 02-03-2011 |
20110037149 | METHOD OF CUTTING A WAFER-LIKE OBJECT AND SEMICONDUCTOR CHIP - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 02-17-2011 |
20110306182 | METHOD OF CUTTING SEMICONDUCTOR SUBSTRATE - Multiphoton absorption is generated, so as to form a part which is intended to be cut | 12-15-2011 |
20120077315 | SEMICONDUCTOR SUBSTRATE CUTTING METHOD - A wafer having a front face formed with a functional device is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting due to a molten processed region within the wafer along a line. Consequently, a fracture can be generated from the starting point region for cutting naturally or with a relatively small force, so as to reach the front face and rear face. Therefore, when an expansion film is attached to the rear face of the wafer by way of a die bonding resin layer after forming the starting point region for cutting and then expanded, the wafer and die bonding resin layer can be cut along the line. | 03-29-2012 |
20120190175 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 07-26-2012 |
20120205357 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface. | 08-16-2012 |
20120205358 | METHOD OF CUTTING AN OBJECT TO BE PROCESSED - A method of cutting an object which can accurately cut the object is provided. An object to be processed | 08-16-2012 |
20120228276 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE FORMED USING A SUBSTRATE CUTTING METHOD - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface. | 09-13-2012 |
20120279947 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser beam machining method and a laser beam machining device capable of cutting a work along a predetermined cutting line on the surface of the work, wherein a pulse laser beam is irradiated on the predetermined cutting line on the surface of the work causing a multiple photon absorption with a condensed point arranged inside the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cutting line, whereby the work can be cut with a small force by cracking the work along the predetermined cutting line starting from the modified area. | 11-08-2012 |
20120314295 | SPECTRAL DEVICE - The object is to easily expand a variable range of selective wavelengths without enlarging a device. A spectral device | 12-13-2012 |
20120329248 | METHOD OF CUTTING SEMICONDUCTOR SUBSTRATE - Multiphoton absorption is generated, so as to form a part which is intended to be cut | 12-27-2012 |
20130009284 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 01-10-2013 |
20130012000 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 01-10-2013 |
20130015167 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 01-17-2013 |
20130017670 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser processing method comprising a step of irradiating an object to be processed with laser light elliptically polarized with an ellipticity of other than 1 such that a light-converging point of the laser light is located within the object along the major axis of an ellipse indicative of the elliptical polarization of laser light, along a line which the object is intended to be cut, to form a modified region caused by multiphoton absorption within the object, along the line which the object is intended to be cut. | 01-17-2013 |
20130252402 | LASER PROCESSING METHOD - A laser processing method which can highly accurately cut objects to be processed having various laminate structures is provided. An object to be processed comprising a substrate and a laminate part disposed on the front face of the substrate is irradiated with laser light L while a light-converging point P is positioned at least within the substrate, so as to form a modified region due to multiphoton absorption at least within the substrate, and cause the modified region to form a starting point region for cutting. When the object is cut along the starting point region for cutting, the object | 09-26-2013 |
20130316517 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 11-28-2013 |
20140034853 | ULTRAVIOLET LIGHT GENERATING TARGET, ELECTRON-BEAM-EXCITED ULTRAVIOLET LIGHT SOURCE, AND METHOD FOR PRODUCING ULTRAVIOLET LIGHT GENERATING TARGET - An ultraviolet light generating target | 02-06-2014 |
20140048721 | ULTRAVIOLET LIGHT GENERATING TARGET, ELECTRON-BEAM-EXCITED ULTRAVIOLET LIGHT SOURCE, AND METHOD FOR PRODUCING ULTRAVIOLET LIGHT GENERATING TARGET - An ultraviolet light generating target | 02-20-2014 |
20140080288 | LASER PROCESSING METHOD - A laser processing method which can highly accurately cut objects to be processed having various laminate structures is provided. An object to be processed comprising a substrate and a laminate part disposed on the front face of the substrate is irradiated with laser light L while a light-converging point P is positioned at least within the substrate, so as to form a modified region due to multiphoton absorption at least within the substrate, and cause the modified region to form a starting point region for cutting. When the object is cut along the starting point region for cutting, the object | 03-20-2014 |
20140097163 | LASER PROCESSING METHOD AND DEVICE - A laser processing method which can efficiently perform laser processing while minimizing the deviation of the converging point of a laser beam in end parts of an object to be processed is provided. | 04-10-2014 |
20150056785 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 02-26-2015 |