Patent application number | Description | Published |
20090123176 | POLYVINYL ACETAL RESIN, ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - The present invention relates to a polyvinyl acetal resin having a specific repeating structural unit, an electrophotographic photosensitive member using the polyvinyl acetal resin, and a process cartridge and an electrophotographic apparatus each having the electrophotographic photosensitive member. | 05-14-2009 |
20090208247 | ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, METHOD OF PRODUCING ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - An electrophotographic photosensitive member is provided in which both a potential variation over a long time period and a potential variation within a short time period are suppressed. A method of producing the electrophotographic photosensitive member, and a process cartridge and an electrophotographic apparatus each having the electrophotographic photosensitive member are also provided. In the electrophotographic photosensitive member, an intermediate layer is a layer formed by coating and drying a coating liquid for an intermediate layer, containing an acidic titania sol and an organic resin, and the acidic titania sol is an acidic sol containing anatase-type titanium oxide crystal particles having an average primary particle diameter of 3 nm or more and 9 nm or less. | 08-20-2009 |
20100075239 | AZO PIGMENT, ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - The present invention provides an azo pigment comprising a group represented by the general formula (1) below, an electrophotographic photosensitive member comprising an intermediate layer comprising the azo pigment, and a process cartridge and an electrophotographic apparatus that comprise the electrophotographic photosensitive member. | 03-25-2010 |
20120114375 | ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - An electrophotographic photosensitive member that can not easily cause charging lines even where it is an electrophotographic photosensitive member employing as a conductive layer a layer containing metal oxide particles is disclosed. Also disclosed are a process cartridge and an electrophotographic apparatus which have such an electrophotographic photosensitive member. The electrophotographic photosensitive member has a conductive layer which contains titanium oxide particles coated with tin oxide doped with phosphorus or tungsten. | 05-10-2012 |
20120121291 | ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - An electrophotographic photosensitive member having a specific conductive layer and promising less variation in light-area potential and residual potential in reproducing images repeatedly, and a process cartridge and an electrophotographic apparatus which have such an electrophotographic photosensitive member are provided. Where a test in which a voltage of −1.0 kV having only a DC voltage component is continuously applied to the conductive layer for 1 hour is conducted, the conductive layer has volume resistivity satisfying the following mathematical expressions (1) and (2), as values before and after the test: | 05-17-2012 |
20120225381 | METHOD FOR PRODUCING ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER - An electrophotographic photosensitive member is provided in which black spots on an output image are hardly caused by local charge injection from a support to a photosensitive layer. For this purpose, a conductive layer is formed using a coating liquid for a conductive layer prepared using a solvent, a binder material and a metal oxide particle that satisfies the following relation (i): 45≦A×ρ×D≦65 (i) wherein A denotes the surface area of the metal oxide particle per unit mass [m | 09-06-2012 |
20130316283 | PROCESS FOR PRODUCING ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER - To provide a process for producing an electrophotographic photosensitive member that can not easily cause any fog due to an increase in dark attenuation, a conductive layer is formed with use of a coating liquid for conductive layer prepared with use of a solvent, a binder material and metal oxide particles. The metal oxide particles (P) and binder material (B) in the coating liquid for conductive layer are in a mass ratio (P/B) of from 1.5/1.0 to 3.5/1.0. The metal oxide particle is a titanium oxide particle coated with tin oxide doped with phosphorus or tungsten. Where powder resistivity of the metal oxide particle is represented by x (Ω·cm) and powder resistivity of the titanium oxide particle as a core particle constituting the metal oxide particle is represented by y (Ω·cm), the y and the x satisfy the following relations (i) and (ii): | 11-28-2013 |
20130323632 | ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE AND ELECTROPHOTOGRAPHIC APPARATUS, AND METHOD OF MANUFACTURING ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER - Provided are an electrophotographic photosensitive member in which leakage doesn't easily occur, a process cartridge and an electrophotographic apparatus each including the electrophotographic photosensitive member, and a method of manufacturing the electrophotographic photosensitive member. The electrophotographic photosensitive member includes a conductive layer including titanium oxide particle coated with tin oxide doped with a hetero element. When an absolute value of a maximum current amount flowing through the conductive layer in a case of performing a test of applying −1.0 kV including DC voltage to the conductive layer is defined as Ia, and an absolute value of a current amount flowing through the conductive layer in a case where a decrease ratio of a current amount per minute reaches 1% or less for the first time is defined as Ib, the relations of Ia≦6000 and 10≦Ib are satisfied. A volume resistivity of the conductive layer before the test is 1.0×10 | 12-05-2013 |
20140065529 | ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE AND ELECTROPHOTOGRAPHIC APPARATUS, AND METHOD FOR PRODUCING ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER - An electrophotographic photosensitive member in which a leakage hardly occurs, a process cartridge and electrophotographic apparatus having the electrophotographic photosensitive member, and a method for producing the electrophotographic photosensitive member are provided. The conductive layer in the electrophotographic photosensitive member contains metal oxide particle coated with tin oxide doped with niobium or tantalum. The relations: Ia≦6,000 and 10≦Ib are satisfied. The conductive layer before the test is performed has a volume resistivity of not less than 1.0×10 | 03-06-2014 |
20140093277 | ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - An electrophotographic photosensitive member that can not easily cause charging lines even where it is an electrophotographic photosensitive member employing as a conductive layer a layer containing metal oxide particles is disclosed. Also disclosed are a process cartridge and an electrophotographic apparatus which have such an electrophotographic photosensitive member. The electrophotographic photosensitive member has a conductive layer which contains titanium oxide particles coated with tin oxide doped with phosphorus or tungsten. | 04-03-2014 |
20150086921 | METHOD FOR PRODUCING ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER - A method for producing an electrophotographic photosensitive member in which leakage hardly occurs is provided. For this, in the method for producing an electrophotographic photosensitive member according to the present invention, a coating liquid for a conductive layer is prepared using a solvent, a binder material, and a metallic oxide particle having a water content of not less than 1.0% by mass and not more than 2.0% by mass; using the coating liquid for a conductive layer, a conductive layer having a volume resistivity of not less than 1.0×10 | 03-26-2015 |
20150185638 | ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE AND ELECTROPHOTOGRAPHIC APPARATUS - In an electrophotographic photosensitive member, a first intermediate layer contains a polymerized product of a composition including an electron transporting substance having a polymerizable functional group, and a crosslinking agent, and a second intermediate layer contains a binder resin and a metal oxide particle. | 07-02-2015 |
20150205218 | ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - Provided are an electrophotographic photosensitive member in which a residual potential hardly increases at the time of image formation, a pattern memory hardly occurs, and the crack of a conductive layer hardly occurs, and a process cartridge and an electrophotographic apparatus each including the electrophotographic photosensitive member. To this end, the conductive layer of the electrophotographic photosensitive member contains a titanium oxide particle coated with tin oxide doped with phosphorus, a tin oxide particle doped with phosphorus, and a binding material, and when a total volume of the conductive layer is represented by V | 07-23-2015 |
20150212437 | ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - An electrophotographic photosensitive member in which a leak hardly occurs, and a process cartridge and electrophotographic apparatus having the same are provided. The conductive layer in the electrophotographic photosensitive member includes a binder material, a first metal oxide particle, and a second metal oxide particle. The first metal oxide particle is a titanium oxide particle coated with tin oxide doped with phosphorus, tungsten, niobium, tantalum, or fluorine, and the second metal oxide particle is an uncoated titanium oxide particle. The contents of the first and second metal oxide particles in the conductive layer is 20 to 50 vol. % and 1.0 to 15 vol. %, respectively based on the total volume of the conductive layer. The content of the second metal oxide particle in the conductive layer is 5.0 to 30% by volume based on the content of the first metal oxide particle in the conductive layer. | 07-30-2015 |
20150241800 | ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - A conductive layer of an electrophotographic photosensitive member contains a first metal oxide particle, a second metal oxide particle, and a binder material. The first metal oxide particle is a zinc oxide particle or tin oxide particle coated with tin oxide doped with phosphorus, tungsten, fluorine, niobium, or tantalum, and the second metal oxide particle is a tin oxide particle doped with an element selected from the group consisting of phosphorus, tungsten, fluorine, niobium, and tantalum, the element being the same as the element with which the tin oxide of the first metal oxide particle is doped. The conductive layer satisfies formulae (1) and (2). | 08-27-2015 |
20150241801 | ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - A conductive layer of an electrophotographic photosensitive member includes a binder material, a first metal oxide particle, and a second metal oxide particle. The first metal oxide particle is a zinc oxide particle or tin oxide particle coated with tin oxide doped with phosphorus, tungsten, niobium, tantalum, or fluorine. The second metal oxide particle is an uncoated zinc oxide particle or tin oxide particle. The content of the first metal oxide particle is not less than 20% by volume and not more than 50% by volume based on the total volume of the conductive layer. The content of the second metal oxide particle is not less than 0.1% by volume and not more than 15% by volume based on the total volume of the conductive layer, and not less than 0.5% by volume and not more than 30% by volume based on the content of the first metal oxide particle. | 08-27-2015 |
20150241802 | ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - A conductive layer contains a binder material, a first particle, and a second particle. The first particle is composed of a core particle and aluminum-doped zinc oxide covering the core particle or is composed of a core particle and oxygen-deficient zinc oxide covering the core particle. The second particle is of the same material as that of the core particle of the first particle. The content of the first particle is 20% by volume or more and 50% by volume or less of the total volume of the conductive layer. The content of the second particle is 0.1% by volume or more and 15% by volume or less of the total volume of the conductive layer and is 0.5% by volume or more and 30% by volume or less of the volume of the first particle. | 08-27-2015 |
Patent application number | Description | Published |
20110077917 | VARIATION DISTRIBUTION SIMULATION APPARATUS AND METHOD, AND RECORDING MEDIUM - A circuit simulation apparatus according to an embodiment of the present invention calculates a set value of a SPICE parameter of a MOSFET to carry out a variation analysis on a semiconductor circuit including the MOSFET. The apparatus includes a storage part configured to store an intermediate model expression that includes a variable related to a manufacture condition or device structure of the MOSFET as a variable affecting variation characteristics of the MOSFET, the intermediate model expression being formed with a universal function having a physical correlation between a physical amount defined by the variable and the SPICE parameter, a setting part configured to set information about the variable included in the intermediate model expression, a calculation part configured to calculate the set value of the SPICE parameter by using the information set in the setting part and the intermediate model expression stored in the storage part, and an output part configured to output process variation dependency of the semiconductor circuit. | 03-31-2011 |
20110131541 | SPICE CORNER MODEL GENERATING METHOD AND APPARATUS - In one embodiment, a SPICE corner model generating method for generating a SPICE corner model of an MOSFET includes preparing a table of a ratio X regarding a combination of two kinds of MOSFETs selected from N kinds of MOSFETs, the ratio X being a magnitude of a variation of an MOSFET in a case where directions of variations of the two kinds of MOSFETs are opposite directions to a magnitude of a variation of an MOSFET in a case where the directions of the variations of the two kinds of MOSFETs are the same direction, where N is an integer of 2 or greater. The method further includes reading out, when a combination of two kinds of MOSFETs is designated among the N kinds of MOSFETs, a value of the ratio X corresponding the designated combination from the table of the ratio X. The method further includes forming two kinds of corner models of opposite directional variations, the two kinds of corner models including a first corner model generated by applying the value of the ratio X to a fast-side corner of a first MOSFET of the two kinds of MOSFETs and to a slow-side corner of a second MOSFET of the two kinds of MOSFETs, and a second corner model generated by applying the value of the ratio X to a slow-side corner of the first MOSFET and to a fast-side corner of the second MOSFET. | 06-02-2011 |
20110238393 | SPICE MODEL PARAMETER OUTPUT APPARATUS AND METHOD, AND RECORDING MEDIUM - In one embodiment, a SPICE model parameter output apparatus is configured to output a SPICE model parameter of a high-frequency or analog MOSFET for a simulation of a semiconductor circuit. The apparatus includes a data input part to input shape data of the MOSFET and measurement data on frequency characteristics of the MOSFET. The apparatus further includes a substrate resistance calculating part configured to calculate a substrate resistance of a one-terminal substrate resistance model regarding the MOSFET, based on the measurement data. The apparatus further includes a SPICE model parameter output part configured to calculate the SPICE model parameter, based on the substrate resistance of the one-terminal substrate resistance model and the shape data, to output the calculated SPICE model parameter. | 09-29-2011 |
20110301932 | MOSFET MODEL OUTPUT APPARATUS AND METHOD, AND RECORDING MEDIUM - In one embodiment, a MOSFET model output apparatus is configured to output a MOSFET model for a simulation of a semiconductor circuit. The apparatus includes a shape data input part configured to input shape data of a MOSFET. The apparatus further includes a parameter calculation part configured to calculate a parameter of a parasitic device model to be added to the MOSFET model, using the shape data. The apparatus further includes a MOSFET model output part configured to generate and output the MOSFET model added with the parasitic device model, using the parameter of the parasitic device model. Further, the MOSFET model output part adds different parasitic device models to the MOSFET model in a case where the MOSFET is an N-type MOSFET and in a case where the MOSFET is a P-type MOSFET. | 12-08-2011 |
Patent application number | Description | Published |
20090233323 | METHOD FOR ANALYSIS OF NKT CELL FUNCTION - The present invention provides a superior method of functional analysis of NKT cells, which enables function analysis of low frequency NKT cells, is independent of the function of autologous APCs, and can avoid an influence of secondary factors and the like. More specifically, the present invention provides a method of functional analysis of human NKT cells including (a) cocultivating a mononuclear cell derived from human peripheral blood with a CD1d-expressing antigen presenting cell derived from a heterologous animal, and (b) evaluating the functionality of NKT cells with the number of NKT cells and/or a substance specific to functional NKT cells as an index; a reagent for analysis of human NKT cells containing a CD1d-expressing antigen presenting cell derived from a heterologous animal; a kit containing (a) a CD1d-expressing antigen presenting cell derived from a heterologous animal, and (b) at least one reagent selected from the group consisting of a reagent for selection of human mononuclear cell, a reagent for measurement of the number of human NKT cells and a reagent for measurement of a substance specific to human functional NKT cells; and the like. | 09-17-2009 |
20100330057 | METHOD OF EVALUATING HUMAN DENTRITIC CELLS AND HUMAN CELL IMMUNOTHERAPEUTIC AGENT - The invention provides a method of evaluating the antigen presentation potential of human dendritic cells by administering α-galactosylceramide-pulsed human dendritic cells to a non-human mammal; collecting a sample containing NKT cells from the non-human mammal; and detecting the activation of NKT cells present in the sample. The invention further provides an agent for human NKT cell immunotherapy, which contains human dendritic cells that have been assessed by the aforementioned method as those possessing an antigen presentation potential for NKT cells. | 12-30-2010 |
20110020932 | IN VITRO DIFFERENTIATION/INDUCTION OF LYMPHOCYTE FROM STEM CELL HAVING GENOTYPE PROVIDED AFTER GENE RECONSTITUTION - The present invention provides a production method of a functional differentiated cell having a post-rearrangement genotype of a particular antigen receptor gene, which includes culturing a stem cell having the genotype in a medium to give the differentiated cell derived from the stem cell. As the stem cell having the genotype, a stem cell (e.g., ES cell) established by transplantation of the nucleus of a cell having the genotype is preferable. As the differentiated cell, NKT cell is preferable. | 01-27-2011 |
20130189302 | IMMUNOTHERAPEUTIC METHOD USING ARTIFICIAL ADJUVANT VECTOR CELLS THAT CO-EXPRESS CD1D AND TARGET ANTIGEN - Provided is immunotherapy of cancer or infection utilizing activation of dendritic cell (DC) by innate immunity, namely, a method of preparing an artificial adjuvant vector cell co-expressing a target antigen and CD1d and having an ability to activate immunity against the target antigen, comprising treating the target antigen and CD1d co-expressing cell with a CD1d ligand in a culture medium. | 07-25-2013 |
20140179004 | CELL FOR USE IN IMMUNOTHERAPY WHICH CONTAINS MODIFIED NUCLEIC ACID CONSTRUCT ENCODING WILMS TUMOR GENE PRODUCT OR FRAGMENT THEREOF, METHOD FOR PRODUCING SAID CELL, AND SAID NUCLEIC ACID CONSTRUCT - A cell of the present invention contains a nucleic acid construct encoding a WT1 gene product or a fragment of the WT1 gene product. The nucleic acid construct contains (i) a region encoding a desired fragment of the WT1 gene product and (ii) only AUG as a functional start codon. The present invention can provide a cell into which the nucleic acid construct is introduced so that an expression level of a WT1 gene product or a fragment of the WT1 gene product is remarkably enhanced. | 06-26-2014 |
Patent application number | Description | Published |
20100078704 | SEMICONDUCTOR STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF - A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film. | 04-01-2010 |
20110240949 | INFORMATION RECORDING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, an information recording device includes first and second electrodes, a variable resistance layer between the first and second electrodes, and a control circuit which controls the variable resistance layer to n (n is a natural number except 1) kinds of resistance. The variable resistance layer comprises a material filled between the first and second electrodes, and particles arranged in a first direction from the first electrode to the second electrode in the material, and each of the particles has a resistance lower than that of the material. A resistance of the variable resistance layer is decided by a short between the first electrode and at least one of the particles. | 10-06-2011 |
20120068250 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film. | 03-22-2012 |
20120261742 | NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS - A nonvolatile semiconductor memory apparatus according to an embodiment includes: a semiconductor layer; a first insulating film formed on the semiconductor layer, the first insulating film being a single-layer film containing silicon oxide or silicon oxynitride; a charge trapping film formed on the first insulating film; a second insulating film formed on the charge trapping film; and a control gate electrode formed on the second insulating film. A metal oxide exists in an interface between the first insulating film and the charge trapping film, the metal oxide comprises material which is selected from the group of Al | 10-18-2012 |
20120319074 | RESISTANCE CHANGE DEVICE AND MEMORY CELL ARRAY - According to one embodiment, a resistance change device includes a first electrode including a metal, a second electrode, and an amorphous oxide layer including Si and O between the first and second electrode, the layer having a concentration gradient of O and a first peak thereof in a direction from the first electrode to the second electrode. | 12-20-2012 |
20130015519 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAMEAANM Fujii; ShosukeAACI Yokohama-shiAACO JPAAGP Fujii; Shosuke Yokohama-shi JPAANM Sakuma; KiwamuAACI Yokohama-shiAACO JPAAGP Sakuma; Kiwamu Yokohama-shi JPAANM Fujiki; JunAACI Yokohama-shiAACO JPAAGP Fujiki; Jun Yokohama-shi JPAANM Kinoshita; AtsuhiroAACI Kamakura-shiAACO JPAAGP Kinoshita; Atsuhiro Kamakura-shi JP - According to one embodiment, a nonvolatile semiconductor memory device includes first to n-th semiconductor layers which are stacked in a first direction perpendicular to a surface of a semiconductor substrate and which extend in a second direction parallel to the surface of the semiconductor substrate, an electrode which extends in the first direction along side surfaces of the first to n-th semiconductor layers, the side surfaces of the first to n-th semiconductor layers exposing in a third direction perpendicular to the first and second directions, and first to n-th charge storage layers located between the first to n-th semiconductor layers and the electrode respectively. The first to n-th charge storage layers are separated from each other in areas between the first to n-th semiconductor layers. | 01-17-2013 |
20150102279 | RESISTANCE CHANGE DEVICE AND MEMORY CELL ARRAY - According to one embodiment, a resistance change device includes a first electrode including a metal, a second electrode, and an amorphous oxide layer including Si and O between the first and second electrode, the layer having a concentration gradient of O and a first peak thereof in a direction from the first electrode to the second electrode. | 04-16-2015 |
Patent application number | Description | Published |
20120242985 | PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD - In accordance with an embodiment, a pattern inspection apparatus includes a stage supporting a substrate with a pattern, a light source irradiating the substrate with light, a detection unit, an optical system, a focus position change unit, a control unit, and a determination unit. The detection unit detects reflected light from the substrate. The optical system leads the light from the light source to the substrate and leads the reflected light to the detection unit. The focus position change unit changes a focus position of the light to the substrate in a direction vertical to the surface of the substrate. The control unit associates the movement of the stage with the light irradiation and controls the stage drive unit and the focus position change unit, thereby changing the focus position. The determination unit determines presence/absence of a defect of the pattern based on the signal from the determination unit. | 09-27-2012 |
20120242995 | PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD - In accordance with an embodiment, a pattern inspection apparatus includes a beam splitter, a polarization controller, a phase controller, a wave front distribution controller, and a detector. The beam splitter generates signal light and reference light from light emitted from a light source. The signal light is reflected light from a pattern on a subject to be inspected. The polarization controller is configured to control the polarization angle and polarization phase of the reference light. The phase controller is configured to control the phase of the reference light. The wave front distribution controller is configured to control a wave front distribution of the reference light. The detector is configured to detect light resulting from interference caused by superposing the signal light and the reference light on each other. | 09-27-2012 |
20120243770 | PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD - In accordance with an embodiment, a pattern inspection method includes: applying a light generated from a light source to the same region of a substrate in which an inspection target pattern is formed; guiding, imaging and then detecting a reflected light from the substrate, and acquiring a detection signal for each of a plurality of different wavelengths; and adding the detection signals of the different wavelengths in association with an incident position of an imaging surface to generate added image data including information on a wavelength and signal intensity, judging, by the added image data, whether the inspection target pattern has any defect, and when judging that the inspection target pattern has a defect, detecting the position of the defect in a direction perpendicular to the substrate. | 09-27-2012 |
20130063721 | PATTERN INSPECTION APPARATUS AND METHOD - In one embodiment, a pattern inspection apparatus includes a light source configured to generate light, and a condenser configured to shape the light into a line beam to illuminate a wafer with the line beam. The apparatus further includes a spectrometer configured to disperse the line beam reflected from the wafer. The apparatus further includes a two-dimensional detector configured to detect the line beam dispersed by the spectrometer, and output a signal including spectrum information of the line beam. The apparatus further includes a comparison unit configured to compare the spectrum information obtained from corresponding places of a repetitive pattern on the wafer with each other, and a determination unit configured to determine whether the wafer includes a defect, based on a comparison result of the spectrum information. | 03-14-2013 |
20140212023 | PATTERN INSPECTION METHOD AND PATTERN INSPECTION APPARATUS - In accordance with an embodiment, a pattern inspection method includes applying a light to a substrate including an inspection target pattern in a plurality of optical conditions, detecting a reflected light from the substrate to acquire a pattern image for each of the optical conditions, outputting a gray value difference between the pattern image and a reference image for each of the optical conditions, and specifying a position of the defect in a stacking direction of the stacked film from a relation of the obtained gray value difference between the optical conditions. The pattern is formed by a stacked film, the optical conditions includes at least a first optical condition for detection of a defect on a surface of the stacked film. | 07-31-2014 |