Patent application number | Description | Published |
20090283140 | METHOD OF MAKING CONTACT TO A SOLAR CELL EMPLOYING A GROUP IBIIIAVIA COMPOUND ABSORBER LAYER - A solar cell manufacturing method which forms a Group IBIIAVIA absorber layer over a front side of a metallic substrate. The back side of the metallic substrate is coated with a conductive protection layer, such as a metal nitride material, that that does not form a high resistivity selenide or sulfide films when exposed to Se and S species at temperatures in the range of 400-600 C. Additionally, the protection material layer is stable in highly acidic and basic electroplating solutions that are employed to deposit layers or precursor layers comprising Cu and at least one of In, Ga, Se and S. | 11-19-2009 |
20100140078 | METHOD AND APPARATUS FOR FORMING CONTACT LAYERS FOR CONTINUOUS WORKPIECES - The present invention provides a roll to roll system and a method to sputter deposit various conductive films on a back surface and a front surface of a continuous substrate to form protected base structures for Group IBIIIAVIA thin film solar cells. In one embodiment of the invention, a back protection film is sputter deposited onto the entire back side of the substrate in a first deposition station without transferring heat from the substrate. Next, a first front film is sputter deposited in a second deposition station to partially cover the front side of the substrate while heat is transferred from substrate by a cooling surface of a cooling mechanism in the second deposition station. The second film does not cover the edges of the substrate to avoid contaminating the cooling surface with the depositing material. Other embodiments are directed to specifics regarding the depositing of these films, adding other films, and a system for depositing the films. | 06-10-2010 |
20110039366 | METHOD AND APPARATUS FOR DEPOSITION OF GRADED OR MULTI-LAYER TRANSPARENT FILMS - In one embodiment, a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another embodiment, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition. | 02-17-2011 |
20110108099 | METHOD OF FORMING TRANSPARENT ZINC OXIDE LAYERS FOR HIGH EFFICIENCY PHOTOVOLTAIC CELLS - A solar cell including a high electrical resistivity transparent layer formed on a CdS buffer layer is provided. The high electrical resistivity transparent layer includes an intrinsic oxide film formed on the buffer layer and an intermediate oxide film formed on the intrinsic oxide film. The intrinsic oxide film includes undoped zinc oxide and has a thickness range of 10 to 40 nm. The intermediate oxide film includes semi-intrinsic zinc oxide doped with aluminum and has a thickness range of 50-150 nm. The intermediate oxide film has an aluminum concentration of less than 1000 ppm. | 05-12-2011 |
20110177645 | ROLL-TO-ROLL EVAPORATION SYSTEM AND METHOD TO MANUFACTURE GROUP IBIIIAVIA PHOTOVOLTAICS - The present inventions provide method and apparatus that employ constituents vaporized from one or more constituent supply source or sources to form one or more films of a precursor layer formed on a surface of a continuous flexible workpiece. Of particular significance is the implementation of vapor deposition systems that operate upon a horizontally disposed portion of a continuous flexible workpiece and a vertically disposed portion of a continuous flexible workpiece, preferably in conjunction with a short free-span zone of the portion of a continuous flexible workpiece. | 07-21-2011 |
20120055543 | BACK CONTACT DIFFUSION BARRIER LAYERS FOR GROUP IBIIIAVIA PHOTOVOLTAIC CELLS - The present invention provides for new ohmic contact materials and diffusion barriers for Group IBIIIAVIA based solar cell structures, which eliminate two way diffusion while preserving the efficient ohmic contacts between the substrate and the absorber layers. | 03-08-2012 |
20120175248 | ROLL-TO-ROLL ELECTROPLATING PHOTOVOLTAIC FILMS - The present invention provides methods of electroplating a film or films onto a top surface of a continuously moving roll-to-roll sheet. In one aspect, the invention includes continuously electroplating a film onto a conductive surface using an electroplating unit as the roll-to-roll sheet moves therethrough. | 07-12-2012 |
20120234314 | ROLL-TO-ROLL REACTOR FOR PROCESSING FLEXIBLE CONTINUOUS WORKPIECE - The present invention provides a reactor for preparing thin films of compound semiconductors for photovoltaic devices. The reactor includes a chamber that has a bottom surface that, in some locations, has protrusions that contact the bottom surface of the substrate having the compound semiconductor to provide uniform heating and cooling of the substrate. Interior walls of the chamber can also be lined with high thermal conductivity portions and low thermal conductivity portions interposed between high thermal conductivity portions. | 09-20-2012 |
20120247388 | ROLL-TO-ROLL EVAPORATION SYSTEM AND METHOD TO MANUFACTURE GROUP IBIIIAVIA PHOTOVOLTAICS - The present inventions provide method and apparatus that employ constituents vaporized from one or more constituent supply source or sources to form one or more films of a precursor layer formed on a surface of a continuous flexible workpiece. Of particular significance is the implementation of vapor deposition systems that operate upon a horizontally disposed portion of a continuous flexible workpiece and a vertically disposed portion of a continuous flexible workpiece, preferably in conjunction with a short free-span zone of the portion of a continuous flexible workpiece. | 10-04-2012 |
20130056059 | BACK CONTACT LAYER STRUCTURE FOR GROUP IBIIIAVIA PHOTOVOLTAIC CELLS - Described are new ohmic contact materials and diffusion barriers for Group IBIIIAVIA based solar cell structures, which eliminate two way diffusion while preserving the efficient ohmic contacts between the substrate and the absorber layers. | 03-07-2013 |
20130061803 | Roll-To-Roll PVD System and Method to Manufacture Group IBIIIAVIA Photovoltaics - The present inventions provide method and apparatus that employ constituents from one or more constituent supply source or sources to form one or more films of a precursor layer formed on a surface of a continuous flexible workpiece. Of particular significance is the implementation of PVD systems that operate upon a horizontally disposed portion of a continuous flexible workpiece and a vertically disposed portion of a continuous flexible workpiece, preferably in conjunction with a short free-span zone of the portion of a continuous flexible workpiece. | 03-14-2013 |
Patent application number | Description | Published |
20080204945 | MAGNETORESISTANCE SENSORS PINNED BY AN ETCH INDUCED MAGNETIC ANISOTROPY - Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The method comprises forming a seed layer structure. The seed layer is etched to form an anisotropic etch along a top surface of the seed layer. A magnetic pinned layer is formed on the top surface of the seed layer structure. The anisotropic etch on the top surface of the seed layer structure induces a magnetic anisotropy in the magnetic pinned layer, which pins the magnetization of the magnetic pinned layer structure. | 08-28-2008 |
20090103215 | MAGNETORESISTIVE (MR) ELEMENTS HAVING IMPROVED HARD BIAS SEED LAYERS - MR devices and associated methods of fabrication are disclosed. An MR device includes an MR element and a bias structure on either side of the MR element for biasing a free layer of the MR element. The bias structure includes an amorphous buffer layer, a first seed layer formed from Cr, a second seed layer formed from a non-magnetic Cr alloy, and a hard bias magnetic layer. The second seed layer formed from the non-magnetic Cr alloy is formed between the Cr seed layer and the hard bias magnetic layer. An example of a non-magnetic Cr alloy is Chromium-Molybdenum (CrMo). | 04-23-2009 |
20100195253 | MAGNETORESISTIVE (MR) ELEMENTS HAVING IMPROVED HARD BIAS SEED LAYERS - MR devices and associated methods of fabrication are disclosed. An MR device includes an MR element and a bias structure on either side of the MR element for biasing a free layer of the MR element. The bias structure includes an amorphous buffer layer, a first seed layer formed from Cr, a second seed layer formed from a non-magnetic Cr alloy, and a hard bias magnetic layer. The second seed layer formed from the non-magnetic Cr alloy is formed between the Cr seed layer and the hard bias magnetic layer. An example of a non-magnetic Cr alloy is Chromium-Molybdenum (CrMo). | 08-05-2010 |
20110122534 | MAGNETORESISTANCE SENSORS PINNED BY AN ETCH INDUCED MAGNETIC ANISOTROPY - Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The method comprises forming a seed layer structure. The seed layer is etched to form an anisotropic etch along a top surface of the seed layer. A magnetic pinned layer is formed on the top surface of the seed layer structure. The anisotropic etch on the top surface of the seed layer structure induces a magnetic anisotropy in the magnetic pinned layer, which pins the magnetization of the magnetic pinned layer structure. | 05-26-2011 |
20140355152 | INTERLAYER COUPLED FREE LAYER WITH OUT OF PLANE MAGNETIC ORIENTATION FOR MAGNETIC READ HEAD - In one embodiment, a magnetic head includes a reference layer having magnetic orientation about aligned with a plane of deposition thereof; a first free layer having a magnetic orientation out of a plane of deposition thereof; a spacer layer between the reference layer and the first free layer; a second free layer having a magnetic orientation out of a plane of deposition thereof; and an inserting layer between the first and second free layers. | 12-04-2014 |
20150154986 | CONTROLLING MAGNETIC LAYER ANISOTROPY FIELD BY OBLIQUE ANGLE STATIC DEPOSITION - In one general embodiment, a system includes a magnetic layer having first and second magnetic sublayers. An anisotropy of the first magnetic sublayer is oriented in a different direction than an anisotropy of the second magnetic sublayer. In another general embodiment, a magnetic head includes a magnetic layer having first and second magnetic sublayers directly adjacent one another. A deposition thickness of the magnetic layer is less than 60 angstroms. An interface between the magnetic sublayers is oriented at an angle of greater than 2 degrees and less than 88 degrees relative to a plane of deposition thereof. The magnetic layer includes at least one material selected from a group consisting of Co, Fe, Ni, CoFe, CoFeB, CoHf and NiFe. | 06-04-2015 |
20150179195 | RECESSED ANTIFERROMAGNETIC DESIGN WITH ANTIPARALLEL PINNED STITCH LAYERS FOR IMPROVED PINNING FIELD - In one general embodiment, a device includes an antiferromagnetic layer; a first stitch layer exchange coupled with the antiferromagnetic layer, the first stitch layer having a magnetic orientation substantially parallel to a magnetic orientation of the antiferromagnetic layer; a second stitch layer exchange coupled with the first stitch layer and having a magnetic orientation substantially antiparallel to the magnetic orientation of the first stitch layer; a pinned layer structure exchange coupled with the second stitch layer; a free layer; and a spacer layer between the free layer and the pinned layer structure. An end of the antiferromagnetic layer facing a sensing face of the device is recessed from the sensing face. | 06-25-2015 |
Patent application number | Description | Published |
20090080122 | CURRENT PERPENDICULAR TO PLANE GMR AND TMR SENSORS WITH IMPROVED MAGNETIC PROPERTIES USING Ru/Si SEED LAYERS - A magnetoresisive sensor having a thin seed layer that provides an exceptionally smooth interface between layers of the sensor stack. The exceptionally smooth interface provided by the seed layer reduces interlayer exchange coupling allowing the non-magnetic spacer layer (or barrier layer) to be very thin. The seed layer includes a thin layer of Ru and a thin layer of Si which intermix to form a homogeneous, amorphous thin seed layer of Ru-silicide. | 03-26-2009 |
20090154032 | MAGNETORESISTIVE SENSOR WITH NITROGENATED HARD BIAS LAYER FOR IMPROVED COERCIVITY - A magnetoresistive sensor having a hard bias structure that provides improved bias field robustness. The sensor includes a nitrogenated hard bias layer and a seed layer that include a nitrogenated NiTa layer and a layer of Ru. The seed layer can also include a layer of CrMn disposed between the layer of NiTa and the layer of Ru. The novel seed structure allows a nitrogenated hard bias layer to be used, while maintaining a high magnetic coercivity of the hard bias layer. | 06-18-2009 |
20090161269 | MAGNETORESISTIVE SENSOR HAVING AN ENHANCED FREE LAYER STABILIZATION MECHANISM - A magnetoresistive sensor having an improved hard bias stabilization structure. The sensor includes a hard bias layer that is formed on a surface that has been treated to form it with an anisotropic texture that induces a magnetic anisotropy oriented parallel with the air bearing surface. This magnetic anisotropy is further aided by a shape induced magnetic anisotropy caused by configuring the hard bias layers to have a width parallel with the air bearing surface that is larger than a stripe height of the hard bias layer measured perpendicular to the air bearing surface. | 06-25-2009 |
20140377589 | NARROW READ-GAP HEAD WITH RECESSED AFM - The embodiments of the present invention relate to a magnetic read head with pinned layers extending to the ABS of the read head and in contact with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. The recessed antiferromagnetic layer may be disposed above or below the pinned layer structure and provides a pinning field to prevent amplitude flipping in head operation. In these embodiments of the present invention, the read gap of the sensor, that is the distance between the highly permeable, magnetically soft upper and lower shield layers at the ABS, is reduced by the thickness of the antiferromagnetic layer. | 12-25-2014 |
20150062759 | CAPPING MATERIALS FOR MAGNETIC READ HEAD SENSOR - Embodiments of the present invention generally relate to a magnetic head having a sensor structure comprising a pinned layer, a spacer layer, a free layer and a capping structure. The free layer has a topmost layer comprising CoB and the capping structure comprises an X layer, where X is an element such as Hf, Zr, Ti, V, Nb, or Ta. | 03-05-2015 |
20150206550 | RECESSED IRMN READER PROCESS - The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer. | 07-23-2015 |
20150248907 | RECESSED IRMN READER SENSOR DESIGN WITH HIGH HK APPLIED TO BOTH REFERENCE AND PIN LAYERS - The embodiments disclosed generally relate to a magnetic read head having a recessed antiferromagnetic layer and a recessed pinned magnetic layer. The recessed pinned magnetic layer is only partially recessed from the MFS, but the recess amount is the same amount as the antiferromagnetic layer. The recess is between about 50 nm and about 200 nm. Processing the pinned magnetic layer and the antiferromagnetic layer and its seed layers at an oblique angle results in an increase in the anisotropy field. | 09-03-2015 |