Patent application number | Description | Published |
20110038219 | APPARATUS AND METHOD FOR INCREASING DATA LINE NOISE TOLERANCE - Circuits and methods for improving noise tolerance in memories are disclosed such as those that include biasing a data line above a normal threshold voltage, either by providing a higher data line charge voltage with a voltage source, or by providing a higher data line charge voltage with a current source. | 02-17-2011 |
20110066816 | NON-VOLATILE MEMORY DEVICE ADAPTED TO IDENTIFY ITSELF AS A BOOT MEMORY - Non-volatile memory devices and methods of their operation are provided. One such non-volatile memory device has an interface and a control circuit. The non-volatile memory device is adapted to identify itself as a boot memory in response to receiving an interrogation request on the interface. | 03-17-2011 |
20110069547 | SENSING AGAINST A REFERENCE CELL - Memory devices, bulk storage devices, and methods of operating memory are disclosed, such as those adapted to process and generate analog data signals representative of data values of two or more bits of information. Programming of such memory devices can include programming to a target threshold voltage within a range representative of the desired bit pattern. Reading such memory devices can include generating an analog data signal indicative of a threshold voltage of a target memory cell. The target memory cell can be sensed against a reference cell includes a dummy string of memory cells connected to a target string of memory cells, and, such as by using a differential amplifier to sense a difference between a reference cell and the target cell. This may allow a wider range of voltages to be used for data states. | 03-24-2011 |
20110103145 | M+N BIT PROGRAMMING AND M+L BIT READ FOR M BIT MEMORY CELLS - A memory device and programming and/or reading process is described that programs and/or reads the cells in the memory array with higher threshold voltage resolution than required. In programming non-volatile memory cells, this allows a more accurate threshold voltage placement during programming and enables pre-compensation for program disturb, increasing the accuracy of any subsequent read or verify operation on the cell. In reading/sensing memory cells, the increased threshold voltage resolution allows more accurate interpretations of the programmed state of the memory cell and also enables more effective use of probabilistic data encoding techniques such as convolutional code, partial response maximum likelihood (PRML), low-density parity check (LDPC), Turbo, and Trellis modulation encoding and/or decoding, reducing the overall error rate of the memory. | 05-05-2011 |
20110116313 | READ METHOD FOR MLC - Memory devices adapted to process and generate analog data signals representative of data values of two or more bits of information facilitate increases in data transfer rates relative to devices processing and generating only binary data signals indicative of individual bits. Programming of such memory devices includes programming to a target threshold voltage range representative of the desired bit pattern. Reading such memory devices includes generating an analog data signal indicative of a threshold voltage of a target memory cell. Cell reads are performed multiple times and the read threshold voltages averaged to more closely approximate actual threshold voltage and to compensate for random noise. | 05-19-2011 |
20110128790 | ANALOG SENSING OF MEMORY CELLS IN A SOLID-STATE MEMORY DEVICE - A memory device that includes a sample and hold circuit coupled to a bit line. The sample and hold circuit stores a target threshold voltage for a selected memory cell. The memory cell is programmed and then verified with a ramped read voltage. The read voltage that turns on the memory cell is stored in the sample and hold circuit. The target threshold voltage is compared with the read voltage by a comparator circuit. When the read voltage is at least substantially equal to (i.e., is substantially equal to and/or starts to exceed) the target threshold voltage, the comparator circuit generates an inhibit signal. | 06-02-2011 |
20110153922 | NON-VOLATILE MEMORY DEVICE HAVING ASSIGNABLE NETWORK IDENTIFICATION - Memory devices and methods disclosed such as a memory device having a plurality of memory dies where each die includes a network identification that uniquely identifies the memory die on a bus. Access for each memory die to the bus can be scheduled by a bus controller. | 06-23-2011 |
20110164449 | PROGRAMMING BASED ON CONTROLLER PERFORMANCE REQUIREMENTS - Methods and solid state drives are disclosed, for example a solid state drive that is adapted to receive and transmit analog data signals representative of bit patterns of three or more levels (such as to facilitate increases in data transfer rates relative to devices communicating data signals indicative of individual bits). Programming of the solid state drive, comprising an array of non-volatile memory cells, might include adjusting the level of each memory cell being programmed in response to a desired performance level of a controller circuit. | 07-07-2011 |
20120057408 | ANALOG READ AND WRITE PATHS IN A SOLID STATE MEMORY DEVICE - A memory array in a memory device is coupled to an analog I/O data interface that enables analog voltage levels to be written to the memory array. The I/O interface comprises a plurality of analog data paths that each includes a capacitor for storing charge corresponding to a target voltage to which a selected memory cell, coupled to its respective data path, is to be programmed. A plurality of comparators can be included in the I/O interface, with each such comparator coupled to a respective bit line. Such a comparator can compare a threshold voltage of a selected memory cell to its target voltage and inhibits further programming when the threshold voltage equals or exceeds the target voltage. | 03-08-2012 |
20120063225 | READING DATA FROM MEMORY CELLS INCLUDING STORING CHARGES TO ANALOG STORAGE DEVICES - Methods of reading data from memory cells. Such methods include subjecting an analog storage device to a voltage level indicative of a threshold voltage of a memory cell to store a charge to the analog storage device, and generating an analog voltage from the stored charge. | 03-15-2012 |
20120075933 | PROGRAMMING A MEMORY DEVICE TO INCREASE DATA RELIABILITY - Methods for programming a memory array, memory devices, and memory systems are disclosed. In one such method, the target reliability of the data to be programmed is determined. The relative reliability of different groups of memory cells of the memory array is determined. The data is programmed into the group of memory cells of the array having a relative reliability corresponding to the target reliability. | 03-29-2012 |
20120110375 | MACRO AND COMMAND EXECUTION FROM MEMORY ARRAY - Methods and apparatus for executing internal operations of memory devices utilizing instructions stored in the memory array of the memory device are disclosed. Decode blocks adapted to interpret instructions and data stored in the memory device are also disclosed. Methods can be used to perform internal self-test operations of the memory device by executing test procedures stored in the memory array of the memory device performing a self-test operation. | 05-03-2012 |
Patent application number | Description | Published |
20080273384 | Non-volatile multilevel memory cells with data read of reference cells - Embodiments of the present disclosure provide methods, devices, modules, and systems for non-volatile multilevel memory cell data retrieval with data read of reference cells. One method includes programming at least one data cell of a number of data cells coupled to a selected word line to a target data threshold voltage (Vt) level corresponding to a target state; programming at least one reference cell of a number of reference cells coupled to the selected word line to a target reference Vt level, the number of reference cells interleaved with the number of data cells; determining a reference state based on a data read of the at least one reference cell; and changing a state read from the at least one data cell based on a change of the at least one reference cell. | 11-06-2008 |
20080273395 | Expanded programming window for non-volatile multilevel memory cells - Embodiments of the present disclosure provide methods, devices, modules, and systems for utilizing an expanded programming window for non-volatile multilevel memory cells. One method includes associating a different logical state with each of a number of different threshold voltage (Vt) distributions. In various embodiments, at least two Vt distributions include negative Vt levels. The method includes applying a read voltage to a word line of a selected cell while applying a pass voltage to word lines of unselected cells, applying a boost voltage to a source line coupled to the selected cell, applying a voltage greater than the boost voltage to a bit line of the selected cell, and sensing a current variation of the bit line in response to the selected cell changing from a non-conducting state to a conducting state. | 11-06-2008 |
20110090735 | EXPANDED PROGRAMMING WINDOW FOR NON-VOLATILE MULTILEVEL MEMORY CELLS - Embodiments of the present disclosure provide methods, devices, modules, and systems for utilizing an expanded programming window for non-volatile multilevel memory cells. One method includes associating a different logical state with each of a number of different threshold voltage (Vt) distributions. In various embodiments, at least two Vt distributions include negative Vt levels. The method includes applying a read voltage to a word line of a selected cell while applying a pass voltage to word lines of unselected cells, applying a boost voltage to a source line coupled to the selected cell, applying a voltage greater than the boost voltage to a bit line of the selected cell, and sensing a current variation of the bit line in response to the selected cell changing from a non-conducting state to a conducting state. | 04-21-2011 |
20110110152 | NON-VOLATILE MULTILEVEL MEMORY CELLS WITH DATA READ OF REFERENCE CELLS - Embodiments of the present disclosure provide methods, devices, modules, and systems for non-volatile multilevel memory cell data retrieval with data read of reference cells. One method includes programming at least one data cell of a number of data cells coupled to a selected word line to a target data threshold voltage (Vt) level corresponding to a target state; programming at least one reference cell of a number of reference cells coupled to the selected word line to a target reference Vt level, the number of reference cells interleaved with the number of data cells; determining a reference state based on a data read of the at least one reference cell; and changing a state read from the at least one data cell based on a change of the at least one reference cell. | 05-12-2011 |