| Patent application number | Description | Published |
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| 20090134501 | DEVICE AND METHOD INCLUDING A SOLDERING PROCESS - A device and method of making a device is disclosed. One embodiment provides a substrate. A semiconductor chip is provided having a first surface with a roughness of at least 100 nm. A diffusion soldering process is performed to join the first surface of the semiconductor chip to the substrate. | 05-28-2009 |
| 20110101416 | BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A bipolar semiconductor device with a hole current redistributing structure and an n-channel IGBT are provided. The n-channel IGBT has a p-doped body region with a first hole mobility and a sub region which is completely embedded within the body region and has a second hole mobility which is lower than the first hole mobility. Further, a method for forming a bipolar semiconductor device is provided. | 05-05-2011 |
| 20110304047 | Method for Producing a Composite Material, Associated Composite Material and Associated Semiconductor Circuit Arrangements - A method for producing a composite material, associated composite material and associated semiconductor circuit arrangements is disclosed. A plurality of first electrically conducting material particles are applied to a carrier substrate and a second electrically conducting material is galvanically deposited on a surface of the first material particles in such a way that the second material mechanically and electrically bonds the plurality of first material particles to one another. | 12-15-2011 |
| 20120032295 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SUCH A DEVICE - A semiconductor device and method for producing such a device is disclosed. One embodiment provides a semiconductor functional wafer having a first and second main surface. Component production processes are performed for producing a component functional region at the first main surface, wherein the component production processes produce an end state that is stable up to at least a first temperature. A carrier substrate is fitted to the first main surface. Access openings are produced to the first main surface. At least one further component production process is performed for producing patterned component functional regions at the first main surface of the functional wafer in the access openings. The end state produced in this process is stable up to a second temperature, which is less than the first temperature. | 02-09-2012 |
| 20120080686 | Semiconductor Devices and Methods of Manufacturing Thereof - In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer. | 04-05-2012 |
| 20120098030 | BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A trench IGBT is disclosed. One embodiment includes an embedded structure arranged above a collector region and selected from a group consisting of a porous semiconductor region, a cavity, and a semiconductor region including additional scattering centers for holes, the embedded structure being arranged below the body contact region such that the embedded structure and the body contact region overlap in a horizontal projection. | 04-26-2012 |
| 20120225540 | Method for fabricating a porous semiconductor body region - A method for fabricating a porous semiconductor body region, comprising: | 09-06-2012 |
| 20120267770 | DEVICE AND METHOD INCLUDING A SOLDERING PROCESS - A device and method of making a device is disclosed. One embodiment provides a substrate. A semiconductor chip is provided having a first surface with a roughness of at least 100 nm. A diffusion soldering process is performed to join the first surface of the semiconductor chip to the substrate. | 10-25-2012 |
| 20130065379 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a porous area of a semiconductor body. The semiconductor body includes a porous structure in the porous area. A semiconductor layer is formed on the porous area. Semiconductor regions are formed in the semiconductor layer. Then, the semiconductor layer is separated from the semiconductor body along the porous area, including introducing hydrogen into the porous area by a thermal treatment. | 03-14-2013 |
| 20130164939 | METHOD, APPARATUS FOR HOLDING AND TREATMENT OF A SUBSTRATE - Some embodiments discussed relates to an apparatus for holding a substrate, comprising a body with a surface for a semiconductor wafer to rest on, with the surface having a first surface area on which a first area of the semiconductor wafer can rest, and a second surface area on which a second area of the semiconductor wafer can rest, wherein the second surface area protrudes with respect to the first surface area. | 06-27-2013 |
| 20130234297 | SEMICONDUCTOR DEVICE, WAFER ASSEMBLY AND METHODS OF MANUFACTURING WAFER ASSEMBLIES AND SEMICONDUCTOR DEVICES - A cavity is formed in a working surface of a substrate in which a semiconductor element is formed. A glass piece formed from a glass material is bonded to the substrate, and the cavity is filled with the glass material. For example, a pre-patterned glass piece is used which includes a protrusion fitting into the cavity. Cavities with widths of more than 10 micrometers are filled fast and reliably. The cavities may have inclined sidewalls. | 09-12-2013 |
| 20130237034 | Glass Piece and Methods of Manufacturing Glass Pieces and Semiconductor Devices with Glass Pieces - A source material, which is based on a glass, is arranged on a working surface of a mold substrate. The mold substrate is made of a single-crystalline material. A cavity is formed in the working surface. The source material is pressed against the mold substrate. During pressing a temperature of the source material and a force exerted on the source material are controlled to fluidify source material. The fluidified source material flows into the cavity. Re-solidified source material forms a glass piece with a protrusion extending into the cavity. After re-solidifying, the glass piece may be bonded to the mold substrate. On the glass piece, protrusions and cavities can be formed with slope angles less than 80 degrees, with different slope angles, with different depths and widths of 10 micrometers and more. | 09-12-2013 |
| 20130337640 | METHOD FOR FABRICATING A POROUS SEMICONDUCTOR BODY REGION - A method for fabricating a porous semiconductor body region, including producing at least one trench in a semiconductor body, starting from a surface of the semiconductor body, producing at least one porous semiconductor body region in the semiconductor body starting from the at least one trench at least along a portion of the side walls of the trench, and filling the trench with a semiconductor material of the semiconductor body. | 12-19-2013 |
| 20140021610 | CHIP PACKAGE AND A METHOD FOR MANUFACTURING A CHIP PACKAGE - A chip package is provided, the chip package including: first encapsulation structure; first passivation layer formed over first encapsulation structure and first electrically conductive layer formed over first passivation layer; at least one chip arranged over first electrically conductive layer and passivation layer wherein at least one chip contact pad contacts first electrically conductive layer; at least one cavity formed in first encapsulation structure, wherein at least one cavity exposes a portion of first passivation layer covering at least one chip contact pad; second encapsulation structure disposed over first encapsulation structure and covering at least one cavity, wherein a chamber region over at least one chip contact pad is defined by at least one cavity and second encapsulation structure; wherein second encapsulation structure includes an inlet and outlet connected to chamber region, wherein inlet and outlet control an inflow and outflow of heat dissipating material to and from chamber region. | 01-23-2014 |
| 20140117530 | Semiconductor Devices and Methods for Manufacturing Semiconductor Devices - A device includes a semiconductor material having a first main surface, an opposite surface opposite to the first main surface and a side surface extending from the first main surface to the opposite surface. The device further includes a first electrical contact element arranged on the first main surface of the semiconductor material and a glass material. The glass material includes a second main surface wherein the glass material contacts the side surface of the semiconductor material and wherein the first main surface of the semiconductor material and the second main surface of the glass material are arranged in a common plane. | 05-01-2014 |
| 20140151789 | Semiconductor Device Including Trenches and Method of Manufacturing a Semiconductor Device - A semiconductor device includes a first transistor cell including a first gate electrode in a first trench. The semiconductor device further includes a second transistor cell including a second gate electrode in a second trench, wherein the first and second gate electrodes are electrically connected. The semiconductor device further includes a third trench between the first and second trenches, wherein the third trench extends deeper into a semiconductor body from a first side of the semiconductor body than the first and second trenches. The semiconductor device further includes a dielectric in the third trench covering a bottom side and walls of the third trench. | 06-05-2014 |
| 20140264779 | Metal Deposition on Substrates - Various techniques, methods, devices and apparatus are provided where an isolation layer is provided at a peripheral region of the substrate, and one or more metal layers are deposited onto the substrate. | 09-18-2014 |
| 20140306327 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A semiconductor device includes a device carrier and a semiconductor chip attached to the device carrier. Further, the semiconductor device includes a lid having a recess. The lid includes a semiconductor material and is attached to the device carrier such that the semiconductor chip is accommodated in the recess. | 10-16-2014 |
| 20140327103 | Semiconductor Device with an Electrode Buried in a Cavity - A semiconductor device with a buried electrode is manufactured by forming a cavity within a semiconductor substrate, forming an active device region in an epitaxial layer disposed on the semiconductor substrate and forming the buried electrode below the active device region in the cavity. The buried electrode is formed from an electrically conductive material different than the material of the semiconductor substrate. | 11-06-2014 |
| 20150028456 | Semiconductor Device, a Semiconductor Wafer Structure, and a Method for Forming a Semiconductor Wafer Structure - Embodiments relate to a semiconductor device, a semiconductor wafer structure, and a method for manufacturing or forming a semiconductor wafer structure. The semiconductor device includes a semiconductor substrate with a first region having a first conductivity type and a second region having a second conductivity type. The semiconductor device further includes an oxide structure with interrupted areas and a metal layer structure being in contact with the second region at least at the interrupted areas of the oxide. | 01-29-2015 |
| 20150056784 | Method for Manufacturing a Semiconductor Device by Thermal Treatment with Hydrogen - A semiconductor device is manufactured by forming semiconductor elements extending between a front surface and a rear side of a semiconductor layer. This includes forming a porous area at a surface of a semiconductor body that includes a porous structure in the porous area, forming the semiconductor layer on the porous area by epitaxial growth so as to have a thickness in a range of 5 μm to 200 μm, and forming semiconductor regions including source, drain, body, emitter, base and/or collector regions in a front surface of the semiconductor layer by ion implantation. After forming the semiconductor regions, hydrogen is introduced into the porous area by a thermal treatment, activating a reallocation of pores and causing cavities to be generated. The semiconductor layer is separated from the semiconductor body along the porous area. After the separation, rear side processing is applied to the semiconductor layer. | 02-26-2015 |
