Patent application number | Description | Published |
20080273400 | FAST ERASABLE NON-VOLATILE MEMORY - A method writes data in a non-volatile memory comprising a main memory area comprising target locations, and an auxiliary memory area comprising auxiliary locations. The method comprises a write-erase cycle comprising: reading an initial set of data in a source location located in the main or auxiliary memory area; inserting the piece of data to be written into the initial set of data, to obtain an updated set of data, partially erasing a first group of auxiliary locations and a group of target locations designated by locations of a second group of auxiliary locations, and writing, in an erased auxiliary location of a third group of auxiliary locations, the updated set of data and the address of the target location. The method is particularly applicable to FLASH memories. | 11-06-2008 |
20080301356 | FAST WRITING NON-VOLATILE MEMORY - A method writes data in a non-volatile memory comprising memory cells that are erased before being written. The method comprises the steps of providing a main non-volatile memory area comprising target pages, providing an auxiliary non-volatile memory area comprising auxiliary pages, providing a look-up table to associate to an address of invalid target page an address of valid auxiliary page, and, in response to a command for writing a piece of data in a target page writing the piece of data as well as the address of the target page in a first erased auxiliary page, invalidating the target page, and updating the look-up table. | 12-04-2008 |
20080301357 | NON-VOLATILE MEMORY WITH AUXILIARY ROTATING SECTORS - A method writes data in a non-volatile memory. The method provides, in the memory, a non-volatile main memory area comprising target pages, a non-volatile auxiliary memory area comprising auxiliary pages, and, in the auxiliary memory area: a current sector comprising erased auxiliary pages usable to write data, a save sector comprising auxiliary pages comprising data linked to target pages to be erased or being erased, a transfer sector comprising auxiliary pages including data to be transferred to erased target pages, and an unavailable sector comprising auxiliary pages to be erased or being erased. The method can be applied in particular to FLASH memories. | 12-04-2008 |
20100020648 | CHARGE RETENTION CIRCUIT FOR A TIME MEASUREMENT - An electronic charge retention circuit for time measurement, including: at least a first capacitive element, a first electrode of which is connected to a floating node (F); at least a second capacitive element, a first electrode of which is connected to the floating node, the first capacitive element having a leakage through its dielectric space and the second capacitive element having a capacitance greater than the first; and at least a first transistor having an isolated control terminal connected to the floating node. | 01-28-2010 |
20100027334 | EEPROM CHARGE RETENTION CIRCUIT FOR TIME MEASUREMENT - An electronic charge retention circuit for time measurement, implanted in an array of EEPROM memory cells, each including a selection transistor in series with a floating-gate transistor, the circuit including, on any one row of memory cells: a first subassembly of at least a first cell, the thickness of the dielectric of the tunnel window of the floating-gate transistor of which is less than that of the other cells; a second subassembly of at least a second cell, the drain and source of the floating-gate transistor of which are interconnected; a third subassembly of at least a third cell; and a fourth subassembly of at least a fourth cell, the tunnel window of which is omitted, the respective floating gates of the transistors of the cells of the four subassemblies being interconnected. | 02-04-2010 |
20100054024 | CIRCUIT FOR READING A CHARGE RETENTION ELEMENT FOR A TIME MEASUREMENT - A method and a circuit for reading an electronic charge retention element for a temporal measurement, of the type including at least one capacitive element whose dielectric exhibits a leakage and a transistor with insulated control terminal for reading the residual charges, the reading circuit including; two parallel branches between two supply terminals, each branch including at least one transistor of a first type and one transistor of a second type, the transistor of the second type of one of the branches consisting of that of the element to be read and the transistor of the second type of the other branch receiving, on its control terminal, a staircase signal, the respective drains of the transistors of the first type being connected to the respective inputs of a comparator whose output provides an indication of the residual voltage in the charge retention element. | 03-04-2010 |
20100054038 | PROGRAMMING OF A CHARGE RETENTION CIRCUIT FOR A TIME MEASUREMENT - A method of controlling an electronic charge retention circuit for time measurement, including at least a first capacitive element, the dielectric of which has a leakage, and at least a second capacitive element, the dielectric of which has a higher capacitance than the first, the two elements having a common electrode defining a floating node that can be connected to an element for measuring its residual charge, in which a charge retention period is programmed or initialized by injecting or extracting charges via the first element. | 03-04-2010 |
20100331045 | EEPROM MEMORY ARCHITECTURE OPTIMIZED FOR EMBEDDED MEMORIES - The present disclosure relates to an electrically erasable and programmable memory comprising rows of memory cells to store words of N bits each, bit lines and word lines, wherein a row of memory cells comprises a first group of memory cells to store collectively erasable words, and at least one second group of memory cells to store one individually erasable word. | 12-30-2010 |
20110026346 | SELF-TIMED LOW POWER SENSE AMPLIFIER - A sense amplifier is disclosed comprising a first sense input, a second sense input, a latch, a first p-channel control transistor arranged to electrically power a first section of the latch and having a gate terminal linked to the first sense input, and a second p-channel control transistor arranged to electrically power a second section of the latch and having a gate terminal linked to the second sense input. Application may be in particular to low power embedded memories. | 02-03-2011 |
20110090745 | SENSE AMPLIFIER WITH FAST BITLINE PRECHARGE MEANS - The disclosure relates to a sense amplifier comprising a cascode transistor and means for biasing the cascode transistor, supplying a control voltage to a gate terminal of the cascode transistor. The means for biasing the cascode transistor comprise means for isolating the gate terminal of the cascode transistor from the output of the voltage generator during a first period of the precharge phase, so as to boost the bitline voltage, then for linking the gate terminal to the output of the voltage generator during a second period of the precharge phase. Application in particular to sense amplifiers for non-volatile memories. | 04-21-2011 |
20110128070 | CHARGE PUMP STAGE, METHOD FOR CONTROLLING A CHARGE PUMP STAGE AND MEMORY HAVING A CHARGE PUMP STAGE - A charge pump having a supply terminal, for receiving a supply voltage, and an output terminal, for supplying an output voltage. The charge pump has a control block including a comparator having a first comparison input, for receiving the supply voltage, a second comparison input, for receiving the output voltage, and a comparison output, for generating a pump-switch-off signal depending upon a comparison between the input voltage and the output voltage; and a switch controlled in switching off by the pump-switch-off signal and configured for switching off the charge pump circuit. The control block has an activation input for receiving an activation signal that has a plurality of pulses and repeatedly activates the comparator-circuit block. | 06-02-2011 |
20110215862 | INTERNAL SUPPLY VOLTAGE CIRCUIT OF AN INTEGRATED CIRCUIT - The disclosure relates to a method for generating a setpoint voltage in an integrated circuit, comprising generating a substantially constant reference voltage, and generating from the reference voltage, a setpoint voltage comprising a component equal to the highest threshold voltage of all the CMOS transistors of a circuit of the integrated circuit and a component which may be equal to zero. The disclosure applies in particular to the provision of a power supply voltage of a circuit based on CMOS transistors. | 09-08-2011 |
20110267094 | CIRCUIT AND METHOD FOR DETECTING A FAULT ATTACK - A device for detecting a fault attack, including: a circuit for detecting an interruption of a power supply; a circuit for comparing the duration of said interruption with a first threshold; and a counter of the number of successive interruptions of the power supply having a duration which does not exceed the first threshold. | 11-03-2011 |
20120250417 | HOT ELECTRON INJECTION NANOCRYSTALS MOS TRANSISTOR - The disclosure relates to a hot electron injection MOS transistor, comprising source and drain regions formed in a semiconductor substrate, a control gate, and a floating gate comprising electrically conductive nanoparticles. The control gate comprises a first portion arranged at a first distance from the substrate, a second portion arranged at a second distance less than the first distance from the substrate, and an intermediary portion linking the first and the second portions. | 10-04-2012 |
20130057298 | METHOD AND DEVICE FOR CHARACTERIZING OR MEASURING A CAPACITANCE - The disclosure relates to a method for characterizing or measuring a capacitance, comprising: linking the capacitance to a first mid-point of a first capacitive divider bridge, applying to the divider bridge a bias voltage, maintaining the voltage of the first mid-point near a reference voltage, discharging a second mid-point of a second divider bridge in parallel with the first by means of a constant current, and measuring the time for a voltage of the second mid-point to become equal to the voltage of the first mid-point. The disclosure may be applied in particular to the control of a touch screen display. | 03-07-2013 |
20130063157 | METHOD AND DEVICE FOR CHARACTERIZING OR MEASURING A FLOATING CAPACITANCE - The disclosure comprises: linking a first terminal of the capacitance to the mid-point of a first voltage divider bridge, applying a first voltage to a second terminal of the capacitance, maintaining a voltage of a mid-point of the first divider bridge near a reference voltage, and discharging a mid-point of a second divider bridge with a constant current. When a voltage of the mid-point of the second bridge reaches a first voltage threshold, applying a second voltage to the second terminal of the capacitance, and measuring the time for the voltage to reach a second threshold. | 03-14-2013 |
20130064021 | SENSE AMPLIFIER WITH FAST BITLINE PRECHARGE MEANS - The disclosure relates to a sense amplifier comprising a cascode transistor and means for biasing the cascode transistor, supplying a control voltage to a gate terminal of the cascode transistor. The means for biasing the cascode transistor comprise means for isolating the gate terminal of the cascode transistor from the output of the voltage generator during a first period of the precharge phase, so as to boost the bitline voltage, then for linking the gate terminal to the output of the voltage generator during a second period of the precharge phase. Application in particular to sense amplifiers for non-volatile memories. | 03-14-2013 |
20130088263 | ELECTRIC CHARGE FLOW CIRCUIT FOR A TIME MEASUREMENT - A charge flow circuit for a time measurement, including a plurality of elementary capacitive elements electrically in series, each elementary capacitive element leaking through its dielectric space. | 04-11-2013 |
20130228846 | NONVOLATILE MEMORY CELLS WITH A VERTICAL SELECTION GATE OF VARIABLE DEPTH - The disclosure relates to an integrated circuit comprising at least two memory cells formed in a semiconductor substrate, and a buried gate common to the selection transistors of the memory cells. The buried gate has a first section of a first depth extending in front of vertical channel regions of the selection transistors, and at least a second section of a second depth greater than the first depth penetrating into a buried source line. The lower side of the buried gate is bordered by a doped region forming a source region of the selection transistors and reaching the buried source line at the level where the second section of the buried gate penetrates into the buried source line, whereby the source region is coupled to the buried source line. | 09-05-2013 |
20130229875 | METHOD OF READING AND WRITING NONVOLATILE MEMORY CELLS - The disclosure relates to a method of reading and writing memory cells, each including a charge accumulation transistor in series with selection transistor, including applying a selection voltage to a gate of the selection transistor of the memory cell; applying a read voltage to a control gate of the charge accumulation transistor of the memory cell; applying the selection voltage to a gate of the selection transistor of a second memory cell coupled to the same bitline; and applying an inhibition voltage to a control gate of the charge accumulation transistor of the second memory cell, to maintain the transistor in a blocked state. | 09-05-2013 |
20130250700 | NONVOLATILE MEMORY COMPRISING MINI WELLS AT A FLOATING POTENTIAL - The disclosure relates to an integrated circuit comprising a nonvolatile memory on a semiconductor substrate. The integrated circuit comprises a doped isolation layer implanted in the depth of the substrate, isolated conductive trenches reaching the isolation layer and forming gates of selection transistors of memory cells, isolation trenches perpendicular to the conductive trenches and reaching the isolation layer, and conductive lines parallel to the conductive trenches, extending on the substrate and forming control gates of charge accumulation transistors of memory cells. The isolation trenches and the isolated conductive trenches delimit a plurality of mini wells in the substrate, the mini wells electrically isolated from each other, each having a floating electrical potential and comprising two memory cells. | 09-26-2013 |
20140097481 | NON-VOLATILE MEMORY WITH VERTICAL SELECTION TRANSISTORS - The present disclosure relates to a method for manufacturing a non-volatile memory on a semiconductive substrate, comprising the steps of implanting in the depth of the substrate a first doped region forming a source region of selection transistors, forming in the substrate a buried gate comprising deep parts extending between an upper face of the substrate and the first doped region, implanting between two adjacent deep parts of the buried gate, a second doped region forming a common drain region of common selection transistors of a pair of memory cells, the selection transistors of the pair of memory cells thus having channel regions extending between the first doped region and the second doped region, along faces opposite the two buried gate adjacent deep parts, and implanting along opposite upper edges of the buried gate, third doped regions forming source regions of charge accumulation transistors. | 04-10-2014 |
20140191179 | VERTICAL BIPOLAR TRANSISTOR - The disclosure relates to an integrated circuit comprising a transistor comprising first and second conduction terminals and a control terminal. The integrated circuit further comprises a stack of a first dielectric layer, a conductive layer, and a second dielectric layer, the first conduction terminal comprising a first semiconductor region formed in the first dielectric layer, the control terminal comprising a second semiconductor region formed in the conductive layer, and the second conduction terminal comprising a third semiconductor region formed in the second dielectric layer. | 07-10-2014 |
20140191291 | METHOD OF MANUFACTURING A NON-VOLATILE MEMORY - The disclosure relates to a method of manufacturing vertical gate transistors in a semiconductor substrate, comprising implanting, in the depth of the substrate, a doped isolation layer, to form a source region of the transistors; forming, in the substrate, parallel trench isolations and second trenches perpendicular to the trench isolations, reaching the isolation layer, and isolated from the substrate by a first dielectric layer; depositing a first conductive layer on the surface of the substrate and in the second trenches; etching the first conductive layer to form the vertical gates of the transistors, and vertical gate connection pads between the extremity of the vertical gates and an edge of the substrate, while keeping a continuity zone in the first conductive layer between each connection pad and a vertical gate; and implanting doped regions on each side of the second trenches, to form drain regions of the transistors. | 07-10-2014 |
20140246720 | INTEGRATED CIRCUIT PROTECTED FROM SHORT CIRCUITS CAUSED BY SILICIDE - An integrated circuit is formed on a semiconductor substrate and includes a trench conductor and a first transistor formed on the surface of the substrate. The transistor includes: a transistor gate structure, a first doped region extending in the substrate between a first edge of the gate structure and an upper edge of the trench conductor, and a first spacer formed on the first edge of the gate structure and above the first doped region. The first spacer completely covers the first doped region and a silicide is present on the trench conductor but is not present on the surface of the first doped region. | 09-04-2014 |