Patent application number | Description | Published |
20090057810 | Method of Fabricating an Integrated Circuit - A method of fabricating an integrated circuit includes providing a semiconductor substrate having a doped area; generating a conductive structure towards the doped area, wherein the conductive structure includes an extending section that protrudes from the doped area; generating an electrically isolating layer at a sidewall of the extending section after generating the conductive structure. | 03-05-2009 |
20090236682 | LAYER STACK INCLUDING A TUNGSTEN LAYER - A method for producing a layer stack includes providing a tungsten layer, depositing an oxidation barrier layer that immunizes the tungsten layer against oxidation on top of the tungsten layer, and depositing a cap layer on top of the oxidation barrier layer. An integrated circuit is also described. | 09-24-2009 |
20100090285 | Integrated Circuit with a Contact Structure Including a Portion Arranged in a Cavity of a Semiconductor Structure - An integrated circuit includes a contact structure with a buried first and a protruding second portion. The buried first portion is arranged in a cavity formed in a semiconductor structure and is in direct contact with the semiconductor structure. The protruding second portion is arranged above the main surface of the semiconductor structure and in direct contact with a conductive structure that is spaced apart from or separated from the main surface of the semiconductor structure. An insulator structure is arranged below and in direct contact with the contact structure. | 04-15-2010 |
20120220086 | METHODS FOR FABRICATING A CMOS INTEGRATED CIRCUIT HAVING A DUAL STRESS LAYER (DSL) - Methods are provided for fabricating a CMOS integrated circuit having a dual stress layer without NiSi hole formation. One method includes depositing a tensile stress layer overlying a semiconductor substrate. A portion of the tensile stress layer is removed, leaving a remaining portion, before applying a curing radiation. A curing radiation is then applied to the remaining portion; and a compressive stress layer is deposited overlying the semiconductor substrate and the remaining portion. | 08-30-2012 |
20120261725 | Stabilized Metal Silicides in Silicon-Germanium Regions of Transistor Elements - Generally, the present disclosure is directed to methods of stabilizing metal silicide contact regions formed in a silicon-germanium active area of a semiconductor device, and devices comprising stabilized metal silicides. One illustrative method disclosed herein includes performing an activation anneal to activate dopants implanted in an active area of a semiconductor device, wherein the active area comprises germanium. Additionally, the method includes, among other things, performing an ion implantation process to implant ions into the active area after performing the activation anneal, forming a metal silicide contact region in the active area, and forming a conductive contact element to the metal silicide contact region. | 10-18-2012 |
20130052819 | Methods of Forming Metal Silicide Regions on Semiconductor Devices Using Different Temperatures - Disclosed herein are various methods of forming metal silicide regions on semiconductor devices by using different temperatures during the silicidation processes. In one example, the method includes forming a plurality of N-doped source/drain regions and a plurality of P-doped source/drain regions in a semiconducting substrate and performing a first heating process at a first temperature to initially form a first metal silicide region in each of the P-doped source/drain regions. The method further includes performing a second heating process at a second temperature to initially form a second metal silicide region in each of the N-doped source/drain regions, wherein the second temperature is less than the first temperature and performing a third heating process at a third temperature to complete the formation of the first and second metal silicide regions, wherein the third temperature is greater than the first temperature. | 02-28-2013 |
20130058559 | METHOD AND APPARATUS FOR CHARACTERIZING DISCONTINUITIES IN SEMICONDUCTOR DEVICES - An approach is provided for characterizing discontinuities in semiconductor devices, for example in a metal silicide. An image of an integrated circuit is caused, at least in part, to be received. The image is analyzed for at least one discontinuity in the integrated circuit structure. A relative measure of the at least one discontinuity is determined in comparison to the integrated circuit structure based on analyzing the image. | 03-07-2013 |
20130122671 | PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS - The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Embodiments of the invention provide a multi-step cleaning process, comprising exposing the substrate to a nitric acid solution after a first anneal, followed by an aqua regia solution after a second anneal. The substrate can be optionally exposed to a hydrochloric acid solution afterward to completely remove any remaining platinum residues. | 05-16-2013 |
20130157450 | Methods of Forming Metal Silicide Regions on Semiconductor Devices - Disclosed herein are various methods of forming metal silicide regions on semiconductor devices. In one example, the method includes forming a sacrificial gate structure above a semiconducting substrate, performing a selective metal silicide formation process to form metal silicide regions in source/drain regions formed in or above the substrate, after forming the metal silicide regions, removing the sacrificial gate structure to define a gate opening and forming a replacement gate structure in the gate opening, the replacement gate structure comprised of at least one metal layer. | 06-20-2013 |
20130234213 | NISI REWORK PROCEDURE TO REMOVE PLATINUM RESIDUALS - The amount of Pt residues remaining after forming Pt-containing NiSi is reduced by performing a rework including applying SPM at a temperature of 130° C. in a SWC tool, if Pt residue is detected. Embodiments include depositing a layer of Ni/Pt on a semiconductor substrate, annealing the deposited Ni/Pt layer, removing unreacted Ni from the annealed Ni/Pt layer, annealing the Ni removed Ni/Pt layer, removing unreacted Pt from the annealed Ni removed Ni/Pt layer, analyzing the Pt removed Ni/Pt layer for unreacted Pt residue, and if unreacted Pt residue is detected, applying SPM to the Pt removed Ni/Pt layer in a SWC tool. The SPM may be applied to the Pt removed Ni'/Pt layer at a temperature of 130° C. | 09-12-2013 |
20130234335 | HNO3 SINGLE WAFER CLEAN PROCESS TO STRIP NICKEL AND FOR MOL POST ETCH - Ni and Pt residuals are eliminated by replacing an SPM cleaning process with application of HNO | 09-12-2013 |
20130323890 | Aqua Regia and Hydrogen Peroxide HCl Combination to Remove Ni and NiPt Residues - A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate. | 12-05-2013 |
20140248770 | MICROWAVE-ASSISTED HEATING OF STRONG ACID SOLUTION TO REMOVE NICKEL PLATINUM/PLATINUM RESIDUES - A method is provided for removing residual Ni/Pt and/or Pt from a semiconductor substrate in a post salicidation cleaning process using microwave heating of a stripping solution. Embodiments include depositing a Ni/Pt layer on a semiconductor substrate; annealing the deposited Ni/Pt layer, forming a nickel/platinum silicide and residual Ni/Pt and/or Pt; removing the residual Ni/Pt and/or Pt from the semiconductor substrate by: microwave heating a strong acid solution in a non-reactive container; exposing the residual Ni/Pt and/or Pt to the microwave heated strong acid solution; and rinsing the semiconductor substrate with water H | 09-04-2014 |
20140363944 | Aqua Regia and Hydrogen Peroxide HCl Combination to Remove Ni and NiPt Residues - A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate. | 12-11-2014 |
20150017456 | Reducing voids caused by trapped acid on a dielectric surface - When an etchant for metal (e.g., HF) reaches an underlying silicon oxide layer, it may form silanol bonds or other hydrogen bonds that resist rinsing, so that some etchant remains to be trapped under the next deposited layer. Trapped etchant can create voids that eventually degrade the performance of the oxide layer. Exposing the surface to a liquid solution or gaseous precursor containing silane seals the defects without causing an overall thickness change. The silane reacts at sites with silanol (or other hydrogen) bonds, breaking the bonds and replacing the hydrogen with silicon, but does not react in the absence of a hydrogen bond. | 01-15-2015 |
20150044861 | GATE SILICIDATION - A method for performing silicidation of gate electrodes includes providing a semiconductor device having first and second transistors with first and second gate electrodes formed on a semiconductor substrate, forming an oxide layer on the first and second gate electrodes and the semiconductor substrate, forming a cover layer on the oxide layer, and back etching the cover layer to expose portions of the oxide layer above the first and second gate electrodes while maintaining a portion of the cover layer between the first and second gate electrodes. Furthermore, the exposed portions of the oxide layer are removed from the first and second gate electrodes to expose upper portions of the first and second gate electrodes, while maintaining a portion of the oxide layer between the first and second gate electrodes, and a silicidation of the exposed upper portions of the first and second gate electrodes is performed. | 02-12-2015 |
Patent application number | Description | Published |
20090171713 | Architectural Design for Self-Service Procurement Application Software - Methods, systems, and apparatus, including computer program products, for implementing a software architecture design for a software application implementing service procurement. The application is structured as multiple process components interacting with each other through service interfaces and multiple service operations, each being implemented for a respective process component. The process components include an Accounting process component, an Internal Request Processing process component, a Purchase Request Processing process component, a Purchase Order Processing process component, a Goods and Service Acknowledgement process component, a Supplier Invoice Processing process component, a Payment Processing process component, an RFQ Processing process component, a Project Processing process component, a Source of Supply Determination process component, a Due Item Processing process component, a Balance Of Foreign Payment Management process component, a Pricing Engine process component, and an Accounting Coding Block Distribution Processing process component. | 07-02-2009 |
20090172699 | Architectural Design for Service Procurement Application Software - Methods, systems, and apparatus, including computer program products, for implementing a software architecture design for a software application implementing service procurement. The application is structured as multiple process components interacting with each other through service interfaces, and multiple service operations, each being implemented for a respective process component. The process components include a Project Processing process component; a Purchase Request Processing process component; a Purchase Order Processing process component; a Purchasing Contract process component; a Goods and Service Acknowledgement process component; an RFQ Processing process component; and a Time and Labor Management process component. | 07-02-2009 |
20100070555 | ARCHITECTURAL DESIGN FOR TIME RECORDING APPLICATION SOFTWARE - Methods, systems, and apparatus, including computer program products, for implementing a software architecture design for a software application implementing time recording. The application is structured as multiple process components interacting with each other through service interfaces, and multiple service operations, each being implemented for a respective process component. The process components include a Project Processing process component that supports the management of projects, a Time and Labor Management process component that supports the management of employees timekeeping and work planning, an Accounting process component that records relevant business transactions, a payroll processing process component that supports the execution and monitoring of payroll processes, and a Goods and Service Acknowledgement process component that receives a confirmation from an employee of goods received or services rendered. | 03-18-2010 |
20100070946 | Providing Supplier Relationship Management Software Application as Enterprise Services - Methods and apparatus, including systems and computer program products, for a services architecture design that provides enterprise services having supplier relationship management functionality at the level of an enterprise application. The design includes a set of service operations, process components, and optionally deployment units. Suitable business objects are also described. | 03-18-2010 |
20100153158 | PROVIDING PROJECT MANAGEMENT SOFTWARE APPLICATION AS ENTERPRISE SERVICES - Methods and apparatus, including systems and computer program products, for a service architecture design that provides enterprise services having project management functionality at the level of an enterprise application. The design includes a set of service operations, process components, and optionally deployment units. Suitable business objects are also described. | 06-17-2010 |
20120173384 | PROVIDING SUPPLIER RELATIONSHIP MANAGEMENT SOFTWARE APPLICATION AS ENTERPRISE SERVICES - Methods and apparatus, including systems and computer program products, for a services architecture design that provides enterprise services having supplier relationship management functionality at the level of an enterprise application. The design includes a set of service operations, process components, and optionally deployment units. Suitable business objects are also described. | 07-05-2012 |
20140344168 | Object Related Collaboration - A collaboration platform employs collaboration objects to automatically construct virtual groupings of individuals sharing a common interest, thereby promoting collaboration. The collaboration platform includes a collaboration engine in communication with business object(s) (e.g. a purchase order document) of an application layer. Based upon masterdata (e.g. a product name) compiled from the business object(s), the collaboration engine creates collaboration object data structures that include information relevant to collaboration. Such collaboration objects may link particular individuals to relevant masterdata. According to one example, an engineer creates a new bill of material in the system which includes a specific product. This product is subject of a purchasing order created by purchasing agent. From the collaboration object(s), the collaboration engine may automatically construct virtual groupings of individuals (e.g. the engineer and the purchasing agent) sharing a common interest (e.g. the product), thereby promoting collaboration. | 11-20-2014 |
Patent application number | Description | Published |
20110307398 | Managing Consistent Interfaces for Request for Information, Request for Information Response, Supplier Assessment Profile, Supplier Questionnaire Assessment, and Supplier Transaction Assessment Business Objects across Heterogeneous Systems - A business object model, which reflects data that is used during a given business transaction, is utilized to generate interfaces. This business object model facilitates commercial transactions by providing consistent interfaces that are suitable for use across industries, across businesses, and across different departments within a business during a business transaction. In some operations, software creates, updates, or otherwise processes information related to a request for information, a request for information response, a supplier assessment profile, a supplier questionnaire assessment, and/or a supplier transaction assessment business object. | 12-15-2011 |
20130317940 | HANDLING PURCHASE ORDERS - Systems, methods and techniques relating to handling purchase orders are described. A described technique includes identifying a first purchase order, wherein the first purchase order associated with one or more attributes, identifying one or more stop rules and one or more restart rules associated with at least one of the identified one or more attributes, postponing the first purchase order to be submitted to at least one supplier based on at least one of the one or more stop rules, identifying a second purchase order, wherein the second purchase order is associated with at least one of the one or more attributes while the first purchase order is postponed, combining the first purchase order and the second purchase order to a combined purchase order, and submitting the combined purchase order to at least one supplier when at least one of the one or more restarting rules is satisfied. | 11-28-2013 |