Patent application number | Description | Published |
20100327697 | Acoustic resonator structure comprising a bridge - An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. | 12-30-2010 |
20100327994 | ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION - An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. An electrical filter comprises an acoustic resonator. | 12-30-2010 |
20110121689 | POLARITY DETERMINING SEED LAYER AND METHOD OF FABRICATING PIEZOELECTRIC MATERIALS WITH SPECIFIC C-AXIS - An acoustic resonator comprises a first electrode, a second electrode and a piezoelectric layer disposed between the first electrode and the second electrode, and comprising a C-axis having an orientation. A polarization-determining seed layer (PDSL) is disposed beneath the piezoelectric layer, the seed layer comprising a metal-nonmetal compound. A method of fabricating a piezoelectric layer over a substrate comprises forming a first layer of a polarization determining seed layer (PDSL) over the substrate. The method further comprises forming a second layer of the PDSL over the first layer. The method further comprises forming a first layer of a piezoelectric material over the second layer of the PDSL; and forming a second layer of the piezoelectric material over the first layer of the piezoelectric material. The piezoelectric material comprises a compression axis (C-axis) oriented along a first direction. | 05-26-2011 |
20120096697 | METHOD OF FORMING ACOUSTIC RESONATOR USING INTERVENING SEED LAYER - A method of forming an acoustic resonator includes forming a seed layer on a first electrode layer, forming a piezoelectric layer directly on a surface of the seed layer, and forming a second electrode layer on the piezoelectric layer. The piezoelectric layer includes multiple crystals of piezoelectric material, and the seed layer causes crystal axis orientations of the crystals to be substantially perpendicular to the surface of the seed layer. | 04-26-2012 |
20120161902 | SOLID MOUNT BULK ACOUSTIC WAVE RESONATOR STRUCTURE COMPRISING A BRIDGE - A solid mount bulk acoustic wave resonator, comprises a first electrode; a second electrode; a piezoelectric layer disposed between the first and second electrodes; and an acoustic reflector comprising a plurality of layers and disposed beneath the first electrode, the second electrode and the piezoelectric layer, An overlap of the acoustic reflector, the first electrode, the second electrode and the piezoelectric layer defines an active area of the acoustic resonator, and the piezoelectric layer extends over an edge of the first electrode. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. The bridge overlaps a portion of the first electrode. | 06-28-2012 |
20120194297 | ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE - An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. | 08-02-2012 |
20120206015 | ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE - An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. | 08-16-2012 |
20120218057 | FILM BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE - A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer. | 08-30-2012 |
20120218058 | COUPLED RESONATOR FILTER COMPRISING A BRIDGE AND FRAME ELEMENTS - In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode. | 08-30-2012 |
20120248941 | STACKED BULK ACCOUSTIC RESONATOR AND METHOD OF FABRICATING THE SAME - A stacked bulk acoustic resonator includes a first piezoelectric layer stacked on a first electrode, a second electrode stacked on the first piezoelectric layer; a second piezoelectric layer stacked on the second electrode, and a third electrode stacked on the second piezoelectric layer. The stacked bulk acoustic resonator includes further includes an inner raised region formed in an inner portion on a surface of at least one of the first, second and third electrodes, and an outer raised region formed along an outer perimeter on the surface of the at least one of the first, second or third electrodes. The outer raised region surrounds the inner raised region and defines a gap between the inner raised region and the outer raised region. | 10-04-2012 |
20120280767 | DOUBLE FILM BULK ACOUSTIC RESONATORS WITH ELECTRODE LAYER AND PIEZO-ELECTRIC LAYER THICKNESSES PROVIDING IMPROVED QUALITY FACTOR - A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other. | 11-08-2012 |
20120326807 | ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION - An acoustic resonator comprises (a) a substrate having atop surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween; (b) an acoustic mirror having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the substrate; (c) a first electrode having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the acoustic mirror; (d) a piezoelectric layer having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the first electrode; and (e) a second electrode having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween. The bottom surface is formed on the top surface of the piezoelectric layer, wherein the overlapped area of body portions of the substrate, the acoustic mirror, the first electrode, the piezoelectric layer and the second electrode is defined as an active area A. | 12-27-2012 |
20130063226 | DOUBLE FILM BULK ACOUSTIC RESONATOR HAVING ELECTRODE EDGE ALIGNMENTS PROVIDING IMPROVED QUALITY FACTOR OR ELECTROMECHANICAL COUPLING COEFFICIENT - An acoustic resonator comprises a substrate having a trench with lateral boundaries, a first electrode formed on the substrate over the trench and having lateral edges that are laterally offset from the lateral boundaries of the trench by a first distance, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer and having edges that are laterally aligned inside the lateral boundaries of the trench, a second piezoelectric layer located on the second electrode, and a third electrode located on the second piezoelectric layer and having edges that are laterally offset from the edges of the second electrode. | 03-14-2013 |
20130063227 | ACCOUSTIC RESONATOR HAVING MULTIPLE LATERAL FEATURES - A thin film bulk acoustic resonator (FBAR) includes a first electrode stacked on a substrate over a cavity, a piezoelectric layer stacked on the first electrode, and a second electrode stacked on the piezoelectric layer. Multiple lateral features are formed on a surface of the second electrode, the lateral features including multiple stepped structures. | 03-14-2013 |
20130193808 | FILM BULK ACOUSTIC RESONATOR WITH MULTI-LAYERS OF DIFFERENT PIEZOELECTRIC MATERIALS AND METHOD OF MAKING - A thin film bulk acoustic resonator (FBAR) includes a first electrode, a first piezoelectric layer having a first c-axis orientation and on the first electrode, a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer, and a second electrode on the second piezoelectric layer. The first and second piezoelectric layers are made of respective different piezoelectric materials. The FBAR can be set to have different resonance frequencies by selecting the first and second c-axis orientations to be respectively the same or different. The high and low frequency range of the FBAR can thus be extended. | 08-01-2013 |
20140111288 | ACOUSTIC RESONATOR HAVING GUARD RING - A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a guard ring structure formed around a perimeter of an active region corresponding to an overlap of the first electrode, the first piezoelectric layer, and the second electrode. | 04-24-2014 |
20140118088 | ACCOUSTIC RESONATOR HAVING COMPOSITE ELECTRODES WITH INTEGRATED LATERAL FEATURES - A bulk acoustic wave (BAW) resonator device includes a bottom electrode on a substrate over one of a cavity and an acoustic reflector, a piezoelectric layer on the bottom electrode, and a top electrode on the piezoelectric layer. At one of the bottom electrode and the top electrode is a composite electrode having an integrated lateral feature, arranged between planar top and bottom surfaces of the composite electrode and configured to create a cut-off frequency mismatch. | 05-01-2014 |
20140118089 | BULK ACOUSTIC WAVE RESONATOR HAVING DOPED PIEZOELECTRIC LAYER WITH IMPROVED PIEZOELECTRIC CHARACTERISTICS - A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with one of erbium or yittrium at an atomic percentage of greater than three for improving piezoelectric properties of the piezoelectric layer. | 05-01-2014 |
20140118090 | BULK ACOUSTIC WAVE RESONATOR HAVING PIEZOELECTRIC LAYER WITH MULTIPLE DOPANTS - A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer. | 05-01-2014 |
20140125202 | BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION AND A PIEZOELECTRIC LAYER WITH MULTIPLE DOPANTS - A bulk acoustic wave (BAW) resonator, comprises: a first electrode; a second electrode comprising a plurality of sides. At least one of the sides comprises a cantilevered portion. The bulk acoustic wave (BAW) resonator also comprises a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer comprises a piezoelectric material doped with a plurality of rare earth elements, and the cantilevered portion extends above the piezoelectric layer. The bulk acoustic wave (BAW) resonator comprises a gap between the cantilevered portion and the piezoelectric layer. | 05-08-2014 |
20140125203 | BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION AND A PIEZOELECTRIC LAYER WITH VARYING AMOUNTS OF DOPANT - A bulk acoustic wave (BAW) resonator, comprises: a first electrode; a second electrode comprising a plurality of sides. At least one of the sides comprises a cantilevered portion. The bulk acoustic wave (BAW) resonator also comprises a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer comprises a piezoelectric material doped with a plurality of rare earth elements, and the cantilevered portion extends above the piezoelectric layer. The bulk acoustic wave (BAW) resonator comprises a gap between the cantilevered portion and the piezoelectric layer. | 05-08-2014 |
20140139077 | ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION - An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. A bridge disposed adjacent to one of the sides of the second electrode. | 05-22-2014 |
20140174908 | SCANDIUM-ALUMINUM ALLOY SPUTTERING TARGETS - A sputtering target comprises an alloy of scandium and aluminum, wherein the alloy has a concentration of 3-10 at % scandium and 90-97 at % aluminum. The sputtering target can be used to produce a piezoelectric layer for an apparatus such as an acoustic resonator. | 06-26-2014 |
20140175950 | ACOUSTIC RESONATOR COMPRISING ALUMINUM SCANDIUM NITRIDE AND TEMPERATURE COMPENSATION FEATURE - An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode and comprising aluminum scandium nitride, a second electrode disposed on the piezoelectric layer, and a temperature compensation feature having a temperature coefficient offsetting at least a portion of a temperature coefficient of the piezoelectric layer, the first electrode, and the second electrode. | 06-26-2014 |
Patent application number | Description | Published |
20110142391 | Ring resonator with wavelength selectivity - The ring resonator includes waveguides configured to guide light signals. The waveguides include an input waveguide and one or more loop waveguides. One of the loop waveguides is a primary loop waveguide that is optically coupled with the input waveguide at a wavelength of light. A tuner is configured to tune the wavelength at which the light is optically coupled from the input waveguide into the primary loop waveguide. One or more light detectors are each configured to provide an output indicating an intensity of light guided in one of the one or more loop waveguides. Electronics are configured to tune the tuner in response to the output from the light detector. | 06-16-2011 |
20110310467 | System having light sensor with enhanced sensitivity - The system includes a light-transmitting medium positioned on a base. The light-transmitting medium included a ridge and a slab region. The ridge extends upward from the slab region and defines a portion of a waveguide on the base. The waveguide is configured to guide a light signal through the device. The device also includes an avalanche effect light sensor positioned on the base and configured to detect the presence of the light signal. The light sensor includes a light-absorbing medium positioned on the ridge of the light-transmitting medium such that the light signal is coupled from the light-transmitting medium into the light-absorbing medium. The light-transmitting includes a charge layer located at an interface of the light-transmitting medium and the light-absorbing medium. A multiplication region is formed in the slab regions of the light-transmitting medium such that the multiplication region receives charge carriers from the charge layer during the operation of the light sensor. | 12-22-2011 |
20120207424 | OPTICAL MODULATOR WITH THREE-DIMENSIONAL WAVEGUIDE TAPERS - An integrated circuit that includes an optical waveguide defined in a semiconductor layer is described. In this integrated circuit, light is coupled between the optical waveguide and an optical modulator, which is disposed on the optical waveguide, using 3-dimensional (3-D) taper structures that are proximate to the ends of the optical modulator. The cross-sectional areas of these 3-D taper structures transition, over a distance, from that of the optical waveguide (distal from the optical modulator) to that of optical modulator (proximate to the ends of the optical modulator). In this way, a spatial extent of an optical mode in the optical waveguide and a spatial extent of the optical mode in the optical modulator may be approximately matched to reduce the optical loss when the light is coupled to or from the optical modulator. | 08-16-2012 |
20120263410 | Device with multiple light sensors receiving light signals from a waveguide - The device includes a main waveguide on a base. The main waveguide is configured to guide a light signal through a light-transmitting medium. The device also includes multiple transition waveguides on the base. Each of the transition waveguide intersects a terminal end of the main waveguide such that each transition waveguide receives a different portion of the light signal from the main waveguide. The device also includes one or more light sensors positioned on the base. Each transition waveguide guides the received light portions to the one or more light sensors such that each of the light signal portions is received at the one or more light sensors. | 10-18-2012 |
20130020664 | Application of electrical field power to light-transmitting medium - A device includes an input waveguide on a base. The input waveguide guides a light signal through a light-transmitting medium to a light sensor. The light sensor includes a sensor waveguide on the base. The device also includes a sensor waveguide on the base. The sensor waveguide includes a light-absorbing medium that receives the light signal from the input waveguide. The light-absorbing medium has one or more continuous doped regions that are each positioned such that an application of electrical energy to the doped regions forms an electrical field in the light-absorbing medium. One or more of the doped regions has a first portion that is located within the light-absorbing medium and a second portion located outside of the light-absorbing medium. The device also includes an electrical conductor for applying the electrical energy to one of the doped regions. The electrical conductor contacts the portion of the doped regions that is located outside of the light-absorbing medium. | 01-24-2013 |
20130020668 | Optical device having light sensor with doped regions - The optical device includes a waveguide on a base. The waveguide is configured to guide a light signal through a light-transmitting medium to a light sensor. The light sensor includes a sensor waveguide on the base. The sensor waveguide receives the light signal from the input waveguide. Additionally, the sensor waveguide includes a light-absorbing medium having an input side. The input side is interfaced with the light-transmitting medium such that at least a portion of the light signal received by the sensor waveguide travels through the input side of the light-absorbing medium upon being received by the sensor waveguide. The light-absorbing medium includes doped regions. One or more of the doped regions each extends from within the light-absorbing medium to the input side of the light-absorbing medium. | 01-24-2013 |
20130094074 | Gain medium providing laser and amplifier functionality to optical device - An optical device includes a gain medium on a substrate. The device also includes one or more laser cavities and an amplifier on the substrate. The one or more laser cavities each guides a light signal through a different region of the gain medium such that each of the light signals is amplified within the gain medium. The amplifier guides an amplified light signal through the gain medium such that the amplified light signal is amplified in the gain medium. | 04-18-2013 |
20130182305 | Optical device having reduced optical leakage - An optical device includes a ridge on a base. The ridge includes an active medium. An active component on the base is a light sensor and/or a light modulator. The active component is configured to guide a light signal through the active medium included in the ridge. Electrical current carriers contact the lateral sides of the ridge on opposing sides of the ridge. Each of the electrical current carriers includes a carrier material that is doped so as to increase the electrical conductivity of the carrier material. The carrier material is different from the active medium. | 07-18-2013 |
20130195398 | Optical component having reduced dependency on etch depth - An optical device includes an active component on a base. The active component is a light sensor and/or a light modulator. The active component is configured to guide a light signal through a ridge of an active medium extending upwards from slab regions of the active medium. The slab regions are on opposing sides of the ridge. The active medium includes a doped region that extends into a lateral side of the ridge and also into one of the slab regions. The depth that the doped region extends into the slab region is further than the depth that the doped region extends into the ridge. | 08-01-2013 |
20130209033 | Coupling between optical devices - A base device has a first waveguide positioned on a first base. The waveguide is at least partially defined by a ridge extending away from the first base. An auxiliary optical device has a second waveguide positioned on a second base. The second optical device is immobilized on the base device such that the second waveguide is between the first base of the first optical device and the second base of the auxiliary device. The first waveguide is optically aligned with the second waveguide such that the first waveguide and second waveguides can exchange optical signals. | 08-15-2013 |
20130229701 | Integration of components on optical device - The optical device includes a Fabry-Perot laser positioned on a base. A modulator is also positioned on the base so as to receive the output from the laser. The modulator is a Franz-Keldysh modulator that uses the Franz-Keldysh effect to modulate light signals. The laser and modulator are configured such that the modulator modulates the output from the laser and also such that the temperature dependence of the modulator tracks the temperature dependence of the laser. | 09-05-2013 |
20130230267 | High speed optical transmitter producing modulated light signals - An optical system includes modulators positioned on a base. Each modulator includes a modulator waveguide that receives a light signal and guides the received light signal through the modulator. The system also includes drive electronics in electrical communication with the modulators. The drive electronics apply electrical energy to each of the modulators such that an electrical field is generated within the modulator waveguide so as to modulate one of the light signals into a modulated signal. The system includes multiple drive paths that each has a length from a contact pad on the drive electronics to a location where the electrical field is formed in one of the modulator waveguides. The modulators are configured such that the drive path length for each of the modulators is less than 0.5 mm. | 09-05-2013 |
20130294472 | Integration of laser into optical platform - An optical device includes a laser or amplifier positioned on a base. The laser includes a ridge of a gain medium positioned on the base such that the base extends out from under the ridge. The ridge includes a top that connects lateral sides of the ridge. Electronics are configured to drive an electrical current through the ridge such that the electrical current passes through one or more of the lateral sides of the ridge. | 11-07-2013 |
20130301979 | Isolation of components on optical device - The optical device includes an active component on a base. The active component is a light sensor and/or a light modulator. The active component including an active medium that includes a ridge and slab regions. The ridge extends upwards from the base and is positioned between the slab regions. The ridge defines a portion of a waveguide on the base. One or more isolation trenches each extends into the slab regions of the active medium and is at least partially spaced apart from the ridge of the active medium. | 11-14-2013 |
20130316484 | Enhancing uniformity of slab region thickness in optical components - A method of forming an optical device includes generating a device precursor having a layer of a light-transmitting medium on a base. The method also includes forming an etch stop on the layer of light-transmitting medium. An active medium is grown on the etch stop and on the light-transmitting medium such that the light-transmitting medium is between the base and the grown active medium. The grown active medium is etched down to the etch stop so as to define a ridge in the active medium. The ridge of active medium defines a portion of a component waveguide that will guide a light signal through an active component on the device. | 11-28-2013 |
20140105239 | Reduction of Mode Hopping in a Laser Cavity - The laser cavity is positioned on a substrate and includes a cavity waveguide guiding a laser light signal between a gain medium and a partial return device. The partial return device receives the laser light signal from the cavity waveguide and returns a first portion of the laser light signal to the cavity waveguide. The partial return device transmits a second portion of the laser light signal to an output waveguide. The partial return device reflects different wavelengths of the laser light signal at different intensities. Additionally, the partial return device is configured such that when the most intense wavelength of the laser light signal reflected by the partial return device is the same as a wavelength of one of modes of the laser light signal, the mode with the next longest wavelength and the mode with the next shortest wavelength are each reflected by the partial return device at an intensity greater than 80% of the intensity of the most intensely reflected wavelength. | 04-17-2014 |
20140111793 | WAFER LEVEL TESTING OF OPTICAL DEVICES - A wafer includes multiple optical devices that each includes one or more optical components. The optical components include light-generating components that each generates a light signal in response to application of electrical energy to the light-generating component from electronics that are external to the wafer. The optical components also include receiver components that each outputs an electrical signal in response to receipt of light. The wafer also includes testing waveguides that each extends from within a boundary of one of the optical devices across the boundary of the optical device and also provides optical communication between a first portion of the optical components and a second portion of the optical components. The first portion of the optical components includes one or more of the light-generating components and the second portion of the optical components include one or more of the receiver components. | 04-24-2014 |
20140113397 | Enhancing planarization uniformity in optical devices - An optical device is formed from a device precursor having a layer of a light-transmitting medium on a base. A first feature is formed on the device precursor. The device precursor is then processed such that a stop layer protects the first feature and a portion of the device precursor is above the top of the stop layer. The first feature is between the base and the stop layer. The device precursor is planarized such that the portion of the device precursor located above the top of the stop layer becomes flush with the top of the portion of the stop layer that is present on the device precursor after the planarization. During the planarization, the stop layer acts as a planarization stop that slows or stops the rate of planarization. | 04-24-2014 |
20140133864 | Edge coupling of optical devices - A system includes optical modules. Each module includes a different base and one or more module waveguides on the base. Module waveguides from different modules are aligned such that the aligned module waveguides exchange light signals. At least a portion of one of the aligned module waveguides is between the base of one of the modules and the base of another module. First electronics operate a transmitter on a first one of the optical modules so as to generate one of the light signals. Second electronics operate a receiver on a second one of the modules such that the electronics generate an electrical signal in response to the receiver receiving one of the light signals. | 05-15-2014 |
20140332918 | ENHANCING THE PERFORMANCE OF LIGHT SENSORS THAT RECEIVE LIGHT SIGNALS FROM AN INTEGRATED WAVEGUIDE - The light sensor and waveguide are positioned on a base such that a light signal guided by the waveguide is received at the light sensor. The waveguide includes a taper configured such that a ratio of a width of the waveguide at a first location in the taper:the width of the waveguide at a second location in the taper is greater than 1.2:1 where a length of the taper between the first location and the second location is less than 60 μm. | 11-13-2014 |
Patent application number | Description | Published |
20080245445 | PROCESS FOR FORMING A CHROMIUM DIFFUSION PORTION AND ARTICLES MADE THEREFROM - In one embodiment, a method for forming an article with a diffusion portion comprises: forming a slurry comprising chromium and silicon, applying the slurry to the article, and heating the article to a sufficient temperature and for a sufficient period of time to diffuse chromium and silicon into the article and form a diffusion portion comprising silicon and a microstructure comprising α-chromium. In one embodiment, a gas turbine component comprises: a superalloy and a diffusion portion having a depth of less than or equal to 60 μm measured from the superalloy surface into the gas turbine component. The diffusion portion has a diffusion surface having a microstructure comprising greater than or equal to 40% by volume α-chromium. | 10-09-2008 |
20100034692 | NICKEL-BASE SUPERALLOY, UNIDIRECTIONAL-SOLIDIFICATION PROCESS THEREFOR, AND CASTINGS FORMED THEREFROM - An alloy composition and method by which the incidence of freckling can be reduced in castings produced with properties similar to the René N5 nickel-base superalloy. The casting has a unidirectional crystal structure and a composition consisting of, by weight, 6% to 8% chromium, 6% to 9% cobalt, 0% to 2% molybdenum, 4% to 6% tungsten, 6.4% to 6.9% tantalum, 0% to 2% titanium, 5% to 7% aluminum, 2.7% to 3.0% rhenium, 0.3% to 0.7% haffiium, 0.04% to 0.08% carbon, 0.002% to 0.006% boron, 0% to 0.075% yttrium, 0.002% to 0.004% zirconium, the balance being nickel and incidental impurities. | 02-11-2010 |
20100119871 | Machine components and methods of fabricating - A thermal barrier coating (TBC) system is provided. The system includes at least one thermal barrier coating (TBC) bond coat layer formed over a substrate surface region. The TBC bond coat layer includes at least one TBC bond coat material. The TBC bond coat material is a nickel-chromium-aluminum-yttrium (NiCrAlY) composition that also includes silicon (Si), hafnium (Hf) and less than 10 weight percent (wt %) cobalt (Co). The TBC system further includes at least one top coat layer formed over the TBC bond coat layer. | 05-13-2010 |
20100135847 | NICKEL-CONTAINING ALLOYS, METHOD OF MANUFACTURE THEREOF AND ARTICLES DERIVED THEREFROM - A nickel-containing alloy is disclosed. The alloy contains about 1.5 to about 4.5 weight percent aluminum; about 1.5 to about 4.5 weight percent titanium; about 0.8 to about 3 weight percent niobium; about 14 to about 28 weight percent chromium; up to about 0.2 weight percent zirconium; about 10 to about 23 weight percent cobalt; about 1 to about 3 weight percent tungsten; about 0.05 to about 0.2 weight percent carbon, about 0.002 to about 0.012 weight percent boron; and about 40 to about 70 weight percent nickel. The atomic ratio of aluminum to titanium is at least about 0.5. The alloy is also substantially free of tantalum. Related processes and articles are also disclosed. | 06-03-2010 |
20110062220 | SUPERALLOY COMPOSITION AND METHOD OF FORMING A TURBINE ENGINE COMPONENT - A nickel-base composition is disclosed that includes:
| 03-17-2011 |
20110318601 | PROCESS FOR FORMING A CHROMIUM DIFFUSION PORTION AND ARTICLES MADE THEREFROM - In one embodiment, a method for forming an article with a diffusion portion comprises: forming a slurry comprising chromium and silicon, applying the slurry to the article, and heating the article to a sufficient temperature and for a sufficient period of time to diffuse chromium and silicon into the article and form a diffusion portion comprising silicon and a microstructure comprising α-chromium. In one embodiment, a gas turbine component comprises: a superalloy and a diffusion portion having a depth of less than or equal to 60 μm measured from the superalloy surface into the gas turbine component. The diffusion portion has a diffusion surface having a microstructure comprising greater than or equal to 40% by volume α-chromium. | 12-29-2011 |
20120080158 | UNIDIRECTIONAL SOLIDIFICATION PROCESS AND APPARATUS THEREFOR - An apparatus and method for casting an alloy using a unidirectional casting technique. The apparatus includes a mold adapted to contain a molten quantity of an alloy, a primary heating zone adapted to heat the mold and the molten alloy therein to a temperature above the liquidus temperature of the alloy, a cooling zone adapted to cool the mold and molten alloy therein to a temperature below the solidus temperature of the alloy and thereby yield the unidirectionally-solidified casting, and an insulation zone between the primary heating zone and the cooling zone. The apparatus also has a secondary heating zone separated from the insulation zone by the primary heating zone. The secondary heating zone maintains the mold and the molten alloy therein at a temperature below the liquidus temperature of the alloy. The temperatures within the primary and secondary heating zones are individually set and controlled. | 04-05-2012 |
20120152483 | UNIDIRECTIONAL SOLIDIFICATION PROCESS AND APPARATUS AND SINGLE-CRYSTAL SEED THEREFOR - A single-crystal seed, apparatus and process for producing a casting having a single-crystal (SX) microstructure. The seed has a geometry that includes a vertex capable of destabilizing an oxide film that forms at the interface between the seed and a molten metal during the casting process, and thereby promotes a continuous single-crystal grain growth and reduces grain misorientation defects that can initiate from the seed/metal interface. | 06-21-2012 |
20120171070 | ALLOY - A alloy and a process of forming a alloy are disclosed. The alloy has a predetermined grain boundary morphology. The alloy includes by weight greater than about 0.06 percent carbon, up to about 0.0015 percent sulfur, less than about 16 percent chromium, between about 39 percent and about 44 percent nickel, between about 2.5 percent and about 3.3 percent niobium, between about 1.4 percent and about 2 percent titanium, up to about 0.5 percent aluminum, up to about 0.006 percent boron, up to about 0.3 percent copper, up to about 0.006 percent nitrogen, and greater than about 0.5 percent molybdenum. | 07-05-2012 |
20120214019 | COMPONENT AND A METHOD OF PROCESSING A COMPONENT - A component and a method of processing a component are disclosed. The method includes providing a base metal having a feature, removing the feature to form a processed region, applying a first layer to the processed region, and applying a second layer to the first layer. The base metal, the first layer, and the second layer each have predetermined thermal expansion coefficients, yield strengths, and elongations. The processed component includes the first layer applied to a processed region of the base metal and a second layer applied to the first layer. | 08-23-2012 |
20120267344 | WELDED COMPONENT, A WELDED GAS TURBINE COMPONENT, AND A PROCESS OF WELDING A COMPONENT - A welded component, a welded gas turbine component, and a process of welding a component are disclosed. The welded component includes a first alloy, a second alloy, and a weld positioned between the first alloy and the second alloy. The weld is formed by a first shim and a second shim being beam welded. | 10-25-2012 |
20120282086 | NICKEL-BASE ALLOY - The invention is a class of nickel-base alloys for gas turbine applications, comprising, by weight, about 13.7 to about 14.3 percent chromium, about 5.0 to about 10.0 percent cobalt, about 3.5 to about 5.2 percent tungsten, about 2.8 to about 5.2 percent titanium, about 2.8 to about 4.6 percent aluminum, about 0.0 to about 3.5 percent tantalum, about 1.0 to about 1.7 percent molybdenum, about 0.08 to about 0.13 percent carbon, about 0.005 to about 0.02 percent boron, about 0.0 to about 1.5 percent niobium, about 0.0 to about 2.5 percent hafnium, about 0.0 to about 0.04 percent zirconium, and the balance substantially nickel. The nickel-base alloys may be provided in the form of useful articles of manufacture, and which possess a unique combination of mechanical properties, microstructural stability, resistance to localized pitting and hot corrosion in high temperature corrosive environments, and high yields during the initial forming process as well as post-forming manufacturing and repair processes. | 11-08-2012 |
20130126056 | CAST NICKEL-IRON-BASE ALLOY COMPONENT AND PROCESS OF FORMING A CAST NICKEL-IRON-BASE ALLOY COMPONENT - A cast nickel-iron-base alloy component having by weight about 12.0% to about 16.5% Cr, about 1.0% to about 2.0% Al, about 2.0% to about 3.0% Ti, about 2.0% to about 3.0% W, about 3.0 to about 5.0% Mo, up to about 0.1% Nb, up to about 0.2% Mn, up to about 0.1% Si, about 0.05% to about 0.10% C, about 0.003 to about 0.010% B, about 35% to about 37% Fe, and balance essentially Ni and inevitable impurities. The nickel-iron-base alloy component has a creep rupture life greater than about 1000 hours at about 25 ksi to about 30 ksi at about 1400° F. A method for forming the cast nickel-iron-base alloy component is also disclosed. | 05-23-2013 |
20130206352 | UNIDIRECTIONAL SOLIDIFICATION PROCESS AND APPARATUS AND SINGLE-CRYSTAL SEED THEREFOR - A single-crystal seed, apparatus and process for producing a casting having a single-crystal (SX) microstructure. The seed has a geometry that includes a vertex capable of destabilizing an oxide film that forms at the interface between the seed and a molten metal during the casting process, and thereby promotes a continuous single-crystal grain growth and reduces grain misorientation defects that can initiate from the seed/metal interface. | 08-15-2013 |
20140037981 | CASTING METHODS AND MOLDED ARTICLES PRODUCED THEREFROM - A method comprising introducing a first casting material into a casting mold; applying directional solidification to the first casting material in the casting mold; introducing a second casting material into the casting mold, the second casting material having a different chemical composition than the first casting material; applying directional solidification to the second casting material in the casting mold; and forming a molded article, wherein the molded article comprises a first region | 02-06-2014 |
20140042128 | ELECTRIC DISCHARGE MACHINING PROCESS, ARTICLE FOR ELECTRIC DISCHARGE MACHINING, AND ELECTRIC DISCHARGE COOLANT - An electric discharge machining process, an article for electric discharge machining, and an electrically-conductive electric discharge machining coolant are disclosed. The electric discharge machining process includes electric discharge machining a target region of a component. The article includes a non-electrically-conductive layer, an electrically-conductive layer, and a target region on the non-electrically-conductive layer. The electrically-conductive electric discharge machining coolant includes a hydrocarbon liquid and carbon powder suspended within the hydrocarbon liquid. | 02-13-2014 |
20140120308 | REINFORCED ARTICLES AND METHODS OF MAKING THE SAME - An article comprising a substrate; a bond layer disposed on the substrate, the bond layer comprising one or more bonding segments and at least one reinforcing segment; at least one protective layer disposed on the bond layer; and at least one cooling hole extending through the substrate, the at least one reinforcing segment and the at least one protective layer, wherein the at least one reinforcing segment reduces cracking and/or delamination at the interface between the substrate and the bond layer, and methods of making the same. | 05-01-2014 |
20140199164 | NICKEL-BASED ALLOY AND TURBINE COMPONENT HAVING NICKEL-BASED ALLOY - A nickel-based alloy and a turbine component are disclosed. The alloy includes, by weight, between about 0.8% and about 1.3% hafnium, between about 5.7% and about 6.4% aluminum, between about 7.0% and about 10.0% cobalt, up to about 0.1% carbon, up to about 8.7% chromium, up to about 0.6% molybdenum, up to about 9.7% tungsten, up to about 0.9% titanium, up to about 0.02% boron, up to about 0.1% manganese, up to about 0.06% silicon, up to about 0.01% phosphorus, up to about 0.004% sulfur, up to about 0.02% zirconium, up to about 1.8% niobium, up to about 0.1% vanadium, up to about 0.1% copper, up to about 0.2% iron, up to about 0.003% magnesium, up to about 0.002% oxygen, up to about 0.002% nitrogen, and a balance nickel. The turbine component is a turbine bucket, a turbine nozzle, or any other suitable turbine component including the alloy. | 07-17-2014 |
20140205490 | NICKEL-BASED ALLOY AND TURBINE COMPONENT HAVING NICKEL-BASED ALLOY - A nickel-based alloy and a turbine component including a nickel-based alloy are disclosed. The nickel-based alloy includes, by weight, between about 8% and about 11% cobalt, up to about 3% niobium, up to about 3% titanium, up to about 2.3% aluminum, up to about 3% tungsten, up to about 25% chromium, up to about 0.1% carbon, up to about 0.01% boron, and a balance nickel, or the nickel-based alloy includes, by weight, between about 1% and about 3% niobium, between about 1% and about 3% titanium, between about 2.1% and about 2.5% aluminum, up to about 3% tungsten, up to about 11% cobalt, up to about 25% chromium, up to about 0.1% carbon, up to about 0.01% boron, and a balance nickel. The turbine component includes the nickel-based alloy. | 07-24-2014 |
20140314618 | CAST NICKEL-BASE ALLOYS INCLUDING IRON - A cast nickel-base superalloy that includes iron added substitutionally for nickel. The cast nickel base superalloy comprises, in weight percent about 1-6% iron, about 7.5-19.1% cobalt, about 7-22.5% chromium, about 1.2-6.2% aluminum, optionally up to about 5% titanium, optionally up to about 6.5% tantalum, optionally up to about 1% Nb, about 2-6% W, optionally up to about 3% Re, optionally up to about 4% Mo, about 0.05-0.18% C, optionally up to about 0.15% Hf, about 0.004-0.015 B, optionally up to about 0.1% Zr, and the balance Ni and incidental impurities. The superalloy is characterized by a □′ solvus temperature that is within 5% of the □′ solvus temperature of the superalloy that does not include 1-6% Fe and a mole fraction of □′ that is within 15% of the mole fraction of the superalloy that does not include 1-6% Fe. | 10-23-2014 |
20140342139 | CASTING METHOD, CAST ARTICLE AND CASTING SYSTEM - A casting method, cast article and casting system are disclosed. The casting method includes providing a base material in a mold, directing a fluid material into the mold, and solidifying the base material and the fluid material to form a cast article. The base material has a first density and first composition. The fluid material has a second density and a second composition. The first density differs from the second density, the first composition differs from the second composition, or the first density differs from the second density and the first composition differs from the second composition. The cast article includes a first material solidification from the base material, and a second material solidification from the fluid material. The casting system includes a mold for containing a base material and an input configuration, with flow control feature, for directing a fluid material into the mold containing the base material. | 11-20-2014 |
Patent application number | Description | Published |
20100044236 | METHOD AND APPARATUS FOR ELECTROPLATING - An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. | 02-25-2010 |
20100116672 | METHOD AND APPARATUS FOR ELECTROPLATING - An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. | 05-13-2010 |
20100147679 | Electroplating Apparatus with Vented Electrolyte Manifold - Embodiments related to increasing a uniformity of an electroplated film are disclosed. For example, one disclosed embodiment provides an electroplating apparatus comprising a plating chamber, a work piece holder, a cathode contact configured to electrically contact a work piece, and an anode contact configured to electrically contact an anode disposed in the plating chamber. A diffusing barrier is disposed between the cathode contact and the anode contact to provide a uniform electrolyte flow to the work piece, and electrolyte delivery and return paths are provided for delivering electrolyte to and away from the plating chamber. Additionally, a vented electrolyte manifold is disposed in the electrolyte delivery path immediately upstream of the plating chamber, the vented electrolyte manifold comprising one or more electrolyte delivery openings that open to the plating chamber and one or more vents that open to a location other than the plating chamber. | 06-17-2010 |
20100219920 | MAGNETICALLY ACTUATED CHUCK FOR EDGE BEVEL REMOVAL - Provided are magnetically actuated wafer chucks that permit a wafer to be clamped or undamped at any time during a process and at any rotational speed, as desired. Such wafer chucks may include constraining members that are movable between open and closed positions. In a closed position, a constraining member aligns the wafer after wafer handoff and/or clamps the wafer during rotation to prevent it from flying off the chuck. In an open position, the constraining member moves away from the wafer to allow liquid etchant to flow from the wafer edge without obstruction. The constraining members may be, for example, cams, attached to arms or links of the chuck. The cams or other constraining members move between open and closed positions by self-balancing forces including a first force, such as a spring force, that acts to move a cam in a first direction, and a non-contact actuate-able force, such as a magnetic force, that acts to move the cam in the opposite direction. The resulting cam motion is smooth and continuous. | 09-02-2010 |
20120061246 | FRONT REFERENCED ANODE - Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved. | 03-15-2012 |
20130042454 | LIPSEALS AND CONTACT ELEMENTS FOR SEMICONDUCTOR ELECTROPLATING APPARATUSES - Disclosed herein are lipseal assemblies for use in electroplating clamshells which may include an elastomeric lipseal for excluding plating solution from a peripheral region of a semiconductor substrate and one or more electrical contact elements. The contact elements may be structurally integrated with the elastomeric lipseal. The lipseal assemblies may include one or more flexible contact elements at least a portion of which may be conformally positioned on an upper surface of the elastomeric lipseal, and may be configured to flex and form a conformal contact surface that interfaces with the substrate. Some elastomeric lipseals disclosed herein may support, align, and seal a substrate in a clamshell, and may include a flexible elastomeric upper portion located above a flexible elastomeric support edge, the upper portion having a top surface and an inner side surface, the later configured to move inward and align the substrate upon compression of the top surface. | 02-21-2013 |
20130062197 | PLATING CUP WITH CONTOURED CUP BOTTOM - Disclosed herein are cups for engaging wafers during electroplating in clamshell assemblies and supplying electrical current to the wafers during electroplating. The cup can comprise an elastomeric seal disposed on the cup and configured to engage the wafer during electroplating, where upon engagement the elastomeric seal substantially excludes plating solution from a peripheral region of the wafer, and where the elastomeric seal and the cup are annular in shape, and comprise one or more contact elements for supplying electrical current to the wafer during electroplating, the one or more contact elements attached to and extending inwardly towards a center of the cup from a metal strip disposed over the elastomeric seal. A notch area of the cup can have a protrusion or an insulated portion on a portion of a bottom surface of the cup where the notch area is aligned with a notch in the wafer. | 03-14-2013 |
20130327650 | METHOD AND APPARATUS FOR ELECTROPLATING - An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. | 12-12-2013 |
20140097088 | ELECTROFILL VACUUM PLATING CELL - The disclosed embodiments relate to methods and apparatus for immersing a substrate in electrolyte in an electroplating cell under sub-atmospheric conditions to reduce or eliminate the formation/trapping of bubbles as the substrate is immersed. Various electrolyte recirculation loops are disclosed to provide electrolyte to the plating cell. The recirculation loops may include pumps, degassers, sensors, valves, etc. The disclosed embodiments allow a substrate to be immersed quickly, greatly reducing the issues related to bubble formation and uneven plating times during electroplating. | 04-10-2014 |
Patent application number | Description | Published |
20100283699 | BROADBAND WHIP ANTENNA - A shortened multi-band antenna includes in-line dipoles, selected elements of which having shielded meanderline chokes to be able to switch from an extended dipole at the lower VHF frequencies to a shortened dipole for the UHF band. Additionally, the staggered asymmetric meanderline configuration permits overall size reduction, whereas antenna construction includes an intermediate fiberglass layer over which conductive foil is placed for tuning and for parasitic radiator purposes to improve the gain of the UHF dipole in the upper regions of the band at 450 megahertz. Additionally, at the low end of the 30 megahertz band a sleeve is positioned between the base of the lowest dipole element and ground, with the sleeve provided with two parallel RLC circuits tuned to different bands to improve VSWR at the low end of the VHF band and to eliminate unwanted nulls. | 11-11-2010 |
20120136585 | METHOD AND SYSTEM FOR THE DETECTION AND IDENTIFICATION OF EXPLOSIVES AND/OR CONTRABAND - A nuclear quadrupole resonance system which senses the stimulated emission from target molecules includes in a calibration step and a stimulated emission response detection step, with the system employing clutter cancellation involving linear regression and the use of cross correlation with a series of known molecular signatures, both increasing the signal-to-noise ratio of the system. | 05-31-2012 |
20120139536 | SHIPPING CONTAINER EXPLOSIVES AND CONTRABAND DETECTION SYSTEM USING NUCLEAR QUADRUPOLE RESONANCE - For container-carried explosives or contraband, stimulated emissions due to nuclear quadropole resonance are detected utilizing a terminated balanced transmission line and a directional coupler for the detection of explosives, contraband, narcotics and the like that exist in metal containers. | 06-07-2012 |
20120154236 | Multiband whip antenna - A multi-band whip antenna having a 30 MHz to 2 GHz bandwidth and an L-band dipole has its coverage extended up to 6 GHz by eliminating nulls and reducing VSWR problems that are cured through the utilization of a sleeve over the feedpoint of the L-band antenna. Chokes in the form of sleeves are provided at either end of the L-band dipole to shorten the L-band antenna for preventing reverse polarity currents at the L-band antenna feedpoint, with the antenna further including the use of double shielded meanderlines to provide improved performance between 410-512 MHz and in which a capacitance sleeve is added at the bottom of the L-band antenna to effectively elongate the antenna below the L-band to permit operation below 700 MHz. | 06-21-2012 |
20120204937 | LEAKY SOLAR ARRAY WITH SPATIALLY SEPARATED COLLECTORS - A leaky travelling wave array of optical elements provide a solar wavelength rectenna. | 08-16-2012 |
20120204954 | QUADRATIC PHASE WEIGHED SOLAR RECEIVER - A leaky travelling wave array of optical elements provide a solar wavelength rectenna. | 08-16-2012 |
20120204955 | LEAKY MODE SOLAR RECEIVER USING CONTINUOUS WEDGE LENS - A leaky travelling wave array of optical elements provide a solar wavelength rectenna. | 08-16-2012 |
20120204956 | CORRECTION WEDGE FOR LEAKY SOLAR ARRAY - A leaky travelling wave array of optical elements provide a solar wavelength rectenna. | 08-16-2012 |
20120205525 | LEAKY WAVE MODE SOLAR RECEIVER - A leaky travelling wave array of optical elements provide a solar wavelength rectenna. | 08-16-2012 |
20120206141 | METHOD AND APPARATUS FOR SENSING THE PRESENCE OF EXPLOSIVES, CONTRABAND AND OTHER MOLECULES USING NUCLEAR QUADRUPOLE RESONANCE AND A SWEPT FREQUENCY CONTINUOUS WAVE SOURCE - Stimulated emissions due to nuclear quadropole resonance are detected utilizing a terminated balanced transmission line and a directional coupler for the detection of explosives, contraband, narcotics and the like that exist between the transmission lines, in which a swept frequency continuous wave generator is utilized to scan between 100 KHz and 10 MHz. | 08-16-2012 |
20120206310 | HIGH PERFORMANCE LOW PROFILE ANTENNAS - A leaky travelling wave array of elements provide a radio frequency antenna. | 08-16-2012 |
20120206787 | SOLAR ARRAY WITH MULTIPLE SUBSTRATE LAYERS PROVIDING FREQUENCY SELECTIVE SURFACES - A leaky travelling wave array of optical elements provide a solar wavelength rectenna. | 08-16-2012 |
20120206807 | ORTHOGONAL SCATTERING FEATURES FOR SOLAR ARRAY - A leaky travelling wave array of optical elements provide a solar wavelength rectenna. | 08-16-2012 |
20120274528 | HIGH PERFORMANCE LOW PROFILE ANTENNAS - A leaky travelling wave array of elements provide a broadband radio frequency antenna. | 11-01-2012 |
20130116932 | USING PHASE MATCHED FILTERS FOR NQR DETECTION OF CONTINUOUS RABI TRANSITIONS - Nuclear quadrupole resonance measurement using two or more wire loop(s) within a space to define a portal, and driving the wire loop(s) with a baseband digital transmitter generating a chirped or stepped signal, to create a corresponding varying electromagnetic field within the portal. Coherent emissions reflected thereby are detected through a directional coupler feeding the transceiver. The detected coherent emissions are processed with a matched filter to determine presence of a target object within the portal. | 05-09-2013 |
20130187726 | TUNABLE VARIABLE IMPEDANCE TRANSMISSION LINE - A low profile antenna using a cavity-backed central radiating surface surrounded by one or more ground plane surfaces. Passively reconfigurable structure provide frequency dependent coupling between the surfaces. The frequency dependent couplings may be implemented using meander line structures, Variable Impedance Transmission Lines (VITLs), or tunable VITLs that used interspersed electroactive sections. | 07-25-2013 |
20130222199 | STACKED BOW TIE ARRAY WITH REFLECTOR - A stacked bow tie antenna array structure is placed within, for example a rectangular reflector. Spaces between the bow tie elements and the reflector are filled with close spaced conductive plates. | 08-29-2013 |
20130300412 | ARRANGEMENT FOR MULTIPLE FREQUENCY, MULTIPLE PORTAL NQR DETECTION - Nuclear quadrupole resonance measurement using two or more wire loop(s) within a space to define a portal, and driving the wire loop(s) with a baseband digital transmitter generating a chirped or stepped signal, to create a corresponding varying electromagnetic field within the portal. Coherent emissions reflected thereby are detected through a directional coupler feeding the transceiver. The detected coherent emissions are processed with a matched filter to determine presence of a target object within the portal. | 11-14-2013 |
20140152486 | NEAR FIELD SUBWAVELENGTH FOCUSING SYNTHETIC APERTURE RADAR WITH CHEMICAL DETECTION MODE - Detection of objects such as a buried explosive device while operating from a moving platform using a radio frequency emission system having two modes. An electromagnetic wave emission and detection system operates in a first mode to locate objects of interest and in a second mode to determine if an object contains explosive materials. In the first mode, the emission and detection system preferably operates as a subwavelength focusing, wideband, superlens using a near field super gain synthetic aperture continuous wave (CW) swept radar. In the second mode the system preferably enabled after detection of an object in the first mode, uses chemical detection methods such as Nuclear Quadrupole Resonance (NQR). | 06-05-2014 |
20140210464 | NQR DETECTION FROM CONTINUOUS RABI TRANSITIONS - Nuclear quadrupole resonance measurement using two or more wire loop(s) within a space to define a portal, and driving the wire loop(s) with a baseband digital transmitter generating a chirped or stepped signal, to create a corresponding varying electromagnetic field within the portal. Coherent emissions reflected thereby are detected through a directional coupler feeding the transceiver. The detected coherent emissions are processed with a matched filter to determine presence of a target object within the portal. | 07-31-2014 |
20140266209 | DETECTION PROCESSING FOR NQR SYSTEM - A system that uses the nuclear quadrupole resonant effect to detect the presence of materials of interest, such as may be excited by radio frequency fields generated within a portal. Transmitted chirp signals may be processed using matching filtering and other signal processing to accurately detect the presence of such materials. | 09-18-2014 |
20140310804 | FINGERPRINT BASED SMARTPHONE USER VERIFICATION - A touch screen, now incorporated in most smart phones, presents an effective and transparent method to incorporate continuous active user verification schemes. The projected capacitive grid structure can be used to capture enough information to verify that a valid user currently has possession of the mobile device, even while the user is not consciously engaged in an active verification interface. Further processing, such as habitual gesture recognition, can augment the process. | 10-16-2014 |
20140327488 | MULTIBAND WHIP ANTENNA - A multi-band whip antenna having a 30 MHz to 2 GHz bandwidth and an L-band dipole has its coverage extended up to 6 GHz by eliminating nulls and reducing VSWR problems that are cured through the utilization of a sleeve over the feedpoint of the L-band antenna. Chokes in the form of sleeves are provided at either end of the L-band dipole to shorten the L-band antenna for preventing reverse polarity currents at the L-band antenna feedpoint, with the antenna further including the use of double shielded meanderlines to provide improved performance between 410-512 MHz and in which a capacitance sleeve is added at the bottom of the L-band antenna to effectively elongate the antenna below the L-band to permit operation below 700 MHz. | 11-06-2014 |
20140333302 | LOW POWER STIMULATED EMISSION NUCLEAR QUADRUPOLE RESONANCE DETECTION AT MULTIPLE REFERENCE POWER LEVELS - System and methods for detecting substances such as explosives via the nuclear quadrapole resonance effect. We observe that the nuclear quadrupole resonances of explosives located within a cavity portal involve continuous Rabi transitions which are nonlinear processes since stimulated emission occurs. In other words, where there are no resonances caused by the presence of an explosive, high average power and low average power measurements should be identical. However, when resonances are stimulated by the system, the difference between these two conditions can be compared to determine a correction to measurements made when a person located in the cavity has explosive material on their person, without the need for separate empty portal or elaborate calibration procedures. | 11-13-2014 |
20150054511 | NUCLEAR QUADRUPOLE RESONANCE SYSTEM - A Nuclear Quadrupole Resonance detection system with features that include:
| 02-26-2015 |
Patent application number | Description | Published |
20080264900 | Metal surface treatment composition - A process is described for treating metal surfaces with roughening compositions that use poly(ethyleneamino propionitrile)polymer as an additive in the composition to improve adhesion of polymeric materials to the metal surfaces and to improve peel strength for thermal stability. The polymer of the invention may be added to compositions containing for example, cupric chloride and hydrochloric acid and is also usable in compositions containing an oxidizer/acid/azole mixture. Other additives, such as adiponitrile may also be beneficially added to compositions of the invention. | 10-30-2008 |
20090294294 | Acid-resistance promoting composition - A composition for providing acid resistance to copper surfaces in the production of multilayered printed circuit boards. The composition comprises an acid, an oxidizer, a five-membered heterocyclic compound and a thiophosphate or a phosphorous sulfide compound. In a preferred embodiment, the phosphorous compound is phosphorus pentasulfide. The composition is applied to a copper or copper alloy substrate and the copper substrate is thereafter bonded to a polymeric material. | 12-03-2009 |
20100170638 | Process for Improving the Adhesion of Polymeric Materials to Metal Surfaces - An adhesion promoting composition and a process for treating metal surfaces with the adhesion promoting composition is described. The adhesion promoting composition comprises an oxidizer, an acid, a corrosion inhibitor, a source of halide ions and a material selected from a mercapto propane sulfonate, mercapto propane sulfonic acid, and bis-sodium sulfopropyl disulfide. The adhesion promoting composition increases the adhesion of polymeric materials to the metal surfaces and also provides increased acid resistance. | 07-08-2010 |
20100243301 | Organic polymer coating for protection against creep corrosion - A process is described for treating metal surfaces printed wiring boards and similar substrates to provide improved creep corrosion resistance on such surfaces. A modified organic solderability preservative composition is used in combination with an emulsion polymer to provide a modified polymer coating on the metal surface finish via a chemical reaction to provide enhanced corrosion protection of the surface. | 09-30-2010 |
20100282393 | Process for Improving Adhesion of Polymeric Materials to Metal Surfaces - A process for treating metal surfaces that includes first contacting the metal surface with a particular acidic peroxide adhesion promoting composition, followed by contacting that metal surface with an aqueous acid post-dip composition to provide a micro-roughened surface. This treatment is particularly suitable for treating metal surfaces used in printed circuit multilayer construction. | 11-11-2010 |
20110079578 | Nickel-Chromium Alloy Stripper for Flexible Wiring Boards - A nickel-chromium alloy etching composition comprising sulfuric acid, a source of chloride ions, including hydrochloric acid or sodium, potassium or ammonium chloride, and a sulfur compound comprising a sulfur atom with an oxidation state between −2 to +5, such as thiosulfate, sulfide, sulfite, bisulfite, metabisulfite and phosphorus pentasulfide that can efficiently remove nickel-chromium alloy in the presence of copper circuits is disclosed. | 04-07-2011 |
20110186221 | Nano-Oxide Process for Bonding Copper/Copper Alloy and Resin - A method of increasing adhesion between a copper or copper alloy layer and a polymeric resin. The method includes the steps of a) applying a pre-dip composition to the copper layer; b) applying a nano-oxide composition to the treated copper layer, c) applying a post-dip composition to the nano-oxide treated surface, and d) bonding a resin to the treated copper surface. The nano-oxide composition comprises (i) a chlorite; (ii) a caustic; (iii) a phosphate salt; (iv) an organic nitro compound; and (v) a thio compound. The post-dip composition is an alkaline solution that comprises (i) a phosphate salt; (ii) a source of molybdenum ions; and (iii) a thiazole. The process of the invention is useful for improving the bond between copper and a resin, including high Tg resins, halogen-free resins, and high speed/lost resins. | 08-04-2011 |
20130045391 | Tarnish Inhibiting Composition for Metal Leadframes - An aqueous tarnish inhibiting solution comprising a mercapto carboxylic acid and a corrosion inhibitor to produce an anti-tarnish layer on metal surfaces, such as silver plated copper leadframes and a method of using the same is provided. The composition provides an improved anti-tarnish layer that does not affect wirebondability or the adhesion of a mold compound to a leadframe. | 02-21-2013 |
20130186764 | Low Etch Process for Direct Metallization - An aqueous treatment solution for increasing the cleaning capability of a treated copper surface comprising: a) an organic compound selected from the group consisting of organic acids, alcohols, ketone, nitriles and combinations of one or more of the foregoing; and b) an oxidizing agent. The aqueous treatment solution is usable in a process for metallizing the walls of holes within a printed wiring board substrate having metallic and non-metallic regions, wherein the printed wiring board is treated with a reducing agent and then contacted with an aqueous dispersion of carbonaceous particles to term a coating of the dispersion over the substrate. The process comprises the step of contacting the metallic regions of the printed wiring board substrate with the aqueous treatment solution to remove deposited carbonaceous particles therefrom. The aqueous treatment solution provides a clean copper surface while providing a low microetch rate. | 07-25-2013 |
Patent application number | Description | Published |
20100114398 | Reactive Power Optimization - Var optimization (VARO) is a subsystem of a voltage and var optimization (VVO) system that processes a capacitor switching optimization problem. The VARO is a self contained process that may work stand alone or in conjunction with a Voltage Regulation Optimization (VRO) system to provide integrated VVO solutions. The VARO system takes network inputs and calculates optimal settings for distribution network capacitor banks. | 05-06-2010 |
20100114400 | Voltage Regulation Optimization - A voltage regulation optimization (VRO) system receives inputs from a DCS or other distribution network control/monitoring system. The VRO then calculates optimized control commands for various network devices including the controllable taps of voltage regulating transformers. | 05-06-2010 |
20100198422 | INTEGRATED VOLTAGE AND VAR OPTIMIZATION PROCESS FOR A DISTRIBUTION SYSTEM - The method determines the optimal settings for the controllable taps u | 08-05-2010 |
20110184902 | BUSINESS RULE INTEGRATION WITH ENGINEERING APPLICATIONS - The system integrates a business rule engine with an engineering application that performs one or more predetermine functions relating to the monitoring, analyzing or controlling of a physical system. Rule processing requests are transmitted from the engineering application to a rule based service which manages the data retrieval, data insertion, rule engine invocation activities in a two pass design so as to optimize the rule processing performance for online system monitoring and control. | 07-28-2011 |
20130338945 | Outage Scope Analysis for Electrical Distribution Systems - Outage scope for an electrical distribution system is estimated by generating downstream outage prediction information indicating whether any service area protected by one of the terminal protective devices of the electrical distribution system likely has a power outage based on reported outage information. Upstream outage prediction information is generated which indicates whether any service area protected by one of the non-terminal protective devices of the electrical distribution system likely has a power outage based on the downstream outage prediction information. Each protective device is predicted to be in an open or closed state based on the downstream and upstream outage prediction information so that more than one open protective device can be identified when more than one fault occurs in different parts of the electrical distribution system. | 12-19-2013 |
20140052391 | Fault Analysis in Electric Networks Having a Plurality of Multi-Phase Buses - Fault analysis for an electric network having a plurality of multi-phase buses is performed by computing equivalent circuits for the multi-phase buses of interest. Each equivalent circuit includes an N×N impedance matrix, N corresponding to the number of phases of the multi-phase bus for which that equivalent circuit is computed. Elements of the impedance matrices are determined based on voltages resulting from a plurality of experimental current injection vectors and a factorized pre-fault admittance matrix. The pre-fault admittance matrix represents nodal admittance of the multi-phase buses without faults. A fault current injection vector for each multi-phase bus and fault type of interest is determined based on the equivalent circuit determined for that multi-phase bus. A fault voltage vector for each multi-phase bus and fault type of interest is determined based on the factorized pre-fault admittance matrix and the fault current injection vector determined for that multi-phase bus and fault type. | 02-20-2014 |
20140062426 | Power Distribution System Loss Reduction with Distributed Energy Resource Control - A power distribution system has a plurality of reactive power resources including capacitor banks and distributed energy resources connected to branches of the power distribution system. Power loss is reduced in the distribution system by determining discrete switch states for the capacitor banks and continuous set points for the distributed energy resources, so that the reactive power provided by the reactive power resources reduces power loss while optionally correcting voltage violations in the power distribution system when the capacitor banks are set in accordance with the respective discrete switch states and the distributed energy resources are operated at the respective continuous set points. The range of values for the continuous set points is constrained based on maximum and minimum reactive power limits for each distributed energy resource under consideration. | 03-06-2014 |
20140265599 | Power Flow Analysis Method and Apparatus for Hybrid AC-DC Systems - Power flow in a hybrid AC-DC power system is analyzed by determining DC power injection variables as a function of AC state information for common coupling buses which connect AC and DC grids. The AC state information includes voltage magnitude and phase angle information for the common coupling buses and buses in the AC grid(s). The DC power injection variables indicate AC power injection into the one or more AC grids at the common coupling buses from the DC grid(s). The AC state information is revised iteratively as a function of the DC power injection variables and the sensitivity of the DC power injection variables to the AC state information, and the DC power injection variables and the sensitivity of the DC power injection variables are revised iteratively as a function of the revised AC state information until the power mismatch is acceptable. | 09-18-2014 |
20150066401 | State Estimation of Power Systems Decomposed Into Two or More Subsystems - A power system grid is decomposed into several parts and decomposed state estimation steps are executed separately, using Lagrangian relaxation and blockwise Gauss-Seidel solution. The achieved solution is the same that would be achieved with a simultaneous state estimation approach. With the disclosed approach, the state estimation problem can be distributed among decomposed estimation operations for each subsystem, where the decomposed estimation operations coordinate with one another to yield the complete state estimate. The approach is particularly suited for estimating the state of power systems that are naturally decomposed into separate subsystems, such as separate AC and HVDC systems, and/or separate transmission and distribution systems. | 03-05-2015 |
20150066402 | Power System State Estimation Using A Two-Level Solution - A power system grid is decomposed into several parts and decomposed state estimation steps are executed separately, on each part, using coordinated feedback regarding a boundary state. The achieved solution is the same that would be achieved with a simultaneous state estimation approach. With the disclosed approach, the state estimation problem can be distributed among decomposed estimation operations for each subsystem and a coordinating operation that yields the complete state estimate. The approach is particularly suited for estimating the state of power systems that are naturally decomposed into separate subsystems, such as separate AC and HVDC systems, and/or into separate transmission and distribution systems. | 03-05-2015 |