Feigelson
Boris Feigelson, Springfield, VA US
Boris N. Feigelson, Springfield, VA US
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20080229549 | Method of growing group III nitride crystals - This disclosure pertains to a process for making single crystal Group III nitride, particularly gallium nitride, at low pressure and temperature, in the region of the phase diagram of Group III nitride where Group III nitride is thermodynamically stable comprises a charge in the reaction vessel of (a) Group III nitride material as a source, (b) a barrier of solvent interposed between said source of Group III nitride and the deposition site, the solvent being prepared from the lithium nitride (Li | 09-25-2008 |
20110123425 | GaN Whiskers and Methods of Growing Them from Solution - Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient. | 05-26-2011 |
20120068188 | Defects Annealing and Impurities Activation in III-Nitride Compound Semiconductors - A GaN sample in a sealed enclosure is heated very fast to a high temperature above the point where GaN is thermodynamically stable and is then cooled down very fast to a temperature where it is thermodynamically stable. The time of the GaN exposure to a high temperature range above its thermodynamic stability is sufficiently short, in a range of few seconds, to prevent the GaN from decomposing. This heating and cooling cycle is repeated multiple times without removing the sample from the enclosure. As a result, by accumulating the exposure time in each cycle, the GaN sample can be exposed to a high temperature above its point of thermodynamic stability for a long time but the GaN sample integrity is maintained (i.e., the GaN doesn't decompose) due to the extremely short heating duration of each single cycle. | 03-22-2012 |
20130186326 | GaN Whiskers and Methods of Growing Them from Solution - Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient. | 07-25-2013 |
Douglas Feigelson, Cincinnati, OH US
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20130166455 | CREATING AND USING DIGITAL CURRENCY - Among other things, a physical device carries value and can be physically delivered in a transaction. The physical device includes a representation of the value carried by the physical device. The representation is usable to transfer the value from the physical device to a digital domain. A security feature can change from a state indicating that the value carried by the physical device has not been compromised to a state indicating that the value carried by the physical device may have been compromised. The change in state is detectable, the representation of the value carried by the physical device being inaccessible except in a manner that causes the security feature to change state. | 06-27-2013 |
Gregg Feigelson, Chester, NY US
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20090023930 | PROCESSES AND INTERMEDIATES FOR THE PREPARATION OF HETEROCYCLIC SULFONAMIDE COMPOUNDS - Methods for preparing compound of formula (I) are described, wherein R | 01-22-2009 |
20100324066 | CRYSTALLINE FORMS OF 4-[(2,4-DICHLORO-5-METHOXYPHENYL)AMINO]-6-METHOXY-7-[3-(4-METHYL-1-PIPERA- ZINYL)PROPOXY]-3-QUINOLINECARBONITRILE AND METHODS OF PREPARING THE SAME - This invention is directed to a crystalline 4-[(2,4-dichloro-5-methoxyphenyl)amino]-6-methoxy-7-[3-(4-methyl-1-piperazinyl)propoxy]-3-quinolinecarbonitrile monohydrate having an x-ray diffraction pattern wherein 2θ angles (°) of significant peaks are at about: 9.19, 11.48, 14.32, 19.16, 19.45, 20.46, 21.29, 22.33, 23.96, 24.95, 25.29, 25.84, 26.55, 27.61, and 29.51, and a transition temperature of about 109° C. to about 115° C. | 12-23-2010 |
Gregg B. Feigelson, Chester, NY US
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20140046058 | PROCESSES FOR THE PREPARATION OF (S)-3-(4-((4-(MORPHOLINOMETHYL)BENZYL)OXY)-1-OXOISOINDOLIN-2-YL)PIPERIDIN- E-2,6-DIONE AND PHARMACEUTICALLY ACCEPTABLE FORMS THEREOF - Provided are processes for the preparation of enantiomerically enriched or enantiomerically pure 3-(4-((4-(morpholinomethyl)benzyl)oxy)-1-oxoisoindolin-2-yl)piperidine-2,6-dione, or a pharmaceutically acceptable form thereof. | 02-13-2014 |
Gregg Brian Feigelson, Orange, NY US
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20140031552 | PROCESSES FOR PREPARING ISOINDOLINE-1,3-DIONE COMPOUNDS - Provided herein are processes for preparing an isoindoline-1,3-dione compound, or an enantiomer or a mixture of enantiomers thereof; or a pharmaceutically acceptable salt, solvate, hydrate, or polymorph thereof. | 01-30-2014 |