Patent application number | Description | Published |
20110012089 | LOW RESISTANCE ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A low resistance light emitting device with an ultraviolet light-emitting structure having a first layer with a first conductivity, a second layer with a second conductivity; and a light emitting quantum well region between the first layer and second layer. A first electrical contact is in electrical connection with the first layer and a second electrical contact is in electrical connection with the second layer. A template serves as a platform for the light-emitting structure. The ultraviolet light-emitting structure has a first layer having a first portion and a second portion of AlXInYGa(1-X-Y)N with an amount of elemental indium, the first portion surface being treated with silicon and indium containing precursor sources, and a second layer. When an electrical potential is applied to the first layer and the second layer the device emits ultraviolet light. | 01-20-2011 |
20110017976 | ULTRAVIOLET LIGHT EMITTING DIODE/LASER DIODE WITH NESTED SUPERLATTICE - A light emitting device with a template comprising a substrate and a nested superlattice. The superlattice has Al | 01-27-2011 |
20110073838 | ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION - Ultraviolet light emitting illuminator, and method for fabricating same, comprises an array of ultraviolet light emitting diodes and a first and a second terminal. When an alternating current is applied across the first and second terminals and thus to each of the diodes, the illuminator emits ultraviolet light at a frequency corresponding to that of the alternating current. The illuminator includes a template with ultraviolet light emitting quantum wells, a first buffer layer with a first type of conductivity and a second buffer layer with a second type of conductivity, all deposited preferably over a strain-relieving layer. A first and second metal contact are applied to the semiconductor layers having the first and second type of conductivity, respectively, to complete the LED. The emission spectrum ranges from 190 nm to 369 nm. The illuminator may be configured in various materials, geometries, sizes and designs. | 03-31-2011 |
20110108887 | MULTILAYER BARRIER III-NITRIDE TRANSISTOR FOR HIGH VOLTAGE ELECTRONICS - An improved high breakdown voltage semiconductor device and method for manufacturing is provided. The device has a substrate and a Al | 05-12-2011 |
20110127571 | MIXED SOURCE GROWTH APPARATUS AND METHOD OF FABRICATING III-NITRIDE ULTRAVIOLET EMITTERS - A device for forming a Group III-V semiconductor on a substrate. The device has a primary chamber comprising a substrate and a heat source for heating the substrate to a first temperature. A secondary chamber comprises a metal source and a second heat source for heating the secondary chamber to a second temperature. A first source is provided which is capable of providing HCl to the secondary chamber wherein the HCl and the metal form metal chloride. A metal-organic source is provided. A metal chloride source is provided which comprises a metal chloride. At least one of the metal chloride, the metal-organic and the second metal chloride react with the nitrogen containing compound to form a Group III-V semiconductor on the substrate. | 06-02-2011 |
20110220867 | SUPERLATTICE FREE ULTRAVIOLET EMITTER - A light emitting device with an ultraviolet light-emitting structure having a first layer with a first conductivity, a second layer with a second conductivity; and a light emitting quantum well region between the first layer and second layer. A first electrical contact is in electrical connection with the first layer and a second electrical contact is in electrical connection with the second layer. A template serves as a platform for the light-emitting structure. The template has a micro-undulated buffer layer with Al | 09-15-2011 |
Patent application number | Description | Published |
20090090984 | Novel Method to Increase Breakdown Voltage of Semiconductor Devices - Methods of achieving high breakdown voltages in semiconductor devices by suppressing the surface flashover using high dielectric strength insulating encapsulation material are generally described. In one embodiment of the present invention, surface flashover in AlGaN/GaN heterostructure field-effect transistors (HFETs) is suppressed by using high dielectric strength insulating encapsulation material. Surface flashover in as-fabricated III-Nitride based HFETs limits the operating voltages at levels well below the breakdown voltages of GaN. | 04-09-2009 |
20100032647 | UTLRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION - An ultraviolet light emitting semiconductor chip, its use in a LED, and methods of its fabrication are disclosed. The semiconductor chip can include a buffer layer of Al | 02-11-2010 |
20120145994 | STABLE HIGH POWER ULTRAVIOLET LIGHT EMITTING DIODE - An improved process for forming a UV emitting diode is described. The process includes providing a substrate. A super-lattice is formed directly on the substrate at a temperature of at least 800 to no more than 1,300° C. wherein the super-lattice comprises Al | 06-14-2012 |
20130056796 | Novel Method to Increase Breakdown Voltage of Semiconductor Devices - Methods of achieving high breakdown voltages in semiconductor devices by suppressing the surface flashover using high dielectric strength insulating encapsulation material are generally described. In one embodiment of the present invention, surface flashover in AlGaN/GaN heterostructure field-effect transistors (HFETs) is suppressed by using high dielectric strength insulating encapsulation material. Surface flashover in as-fabricated III-Nitride based HFETs limits the operating voltages at levels well below the breakdown voltages of GaN. | 03-07-2013 |
20130256631 | ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION - Ultraviolet light emitting illuminator, and method for fabricating same, comprises an array of ultraviolet light emitting diodes and a first and second terminal. When an alternating current is applied across the first and second terminals and thus to each of the diodes, the illuminator emits ultraviolet light at a frequency corresponding to that of the alternating current. The illuminator includes a template with ultraviolet light emitting quantum wells, a first buffer layer with a first type of conductivity and a second buffer layer with a second type of conductivity, all deposited preferably over strain-relieving layer. A first and second metal contact are applied to the semiconductor layers having the first and second type of conductivity, respectively, to complete the LED. The emission spectrum ranges from 190 nm to 369 nm. The illuminator may be configured in various materials, geometries, sizes and designs. | 10-03-2013 |
20130313613 | Selectively Area Regrown III-Nitride High Electron Mobility Transistor - Methods for forming a HEMT device are provided. The method includes forming an ultra-thin barrier layer on the plurality of thin film layers. A dielectric thin film layer is formed over a portion of the ultra-thin barrier layer to leave exposed areas of the ultra-thin barrier layer. A SAG S-D thin film layer is formed over the exposed areas of the ultra-thin barrier layer while leaving the dielectric thin film layer exposed. The dielectric thin film layer is then removed to expose the underlying ultra-thin barrier layer. The underlying ultra-thin barrier layer is treating with fluorine to form a treated area. A source and drain is added on the SAG S-D thin film layer, and a dielectric coating is deposited over the ultra-thin barrier layer treated with fluorine such that the dielectric coating is positioned between the source and the drain. | 11-28-2013 |