Patent application number | Description | Published |
20110027128 | SENSOR CHIP AND METHOD OF MANUFACTURING THE SAME - A sensor chip ( | 02-03-2011 |
20110033315 | MICROFLUIDIC PUMP - A microfluidic pump comprises a plurality of metal electrodes ( | 02-10-2011 |
20110168577 | ESD PROTECTION FOR BIOSENSORS - A biosensor assembly includes a fluidic system. A biosensor is positioned for direct contact with a fluid as the fluid flows through the fluidic system. An electrostatic discharge (ESD) electrode provides ESD protection for the biosensor. The ESD electrode can be engaged while the fluidic system of the assembly is primed, and then disengaged to prevent leakage currents from the fluid while the biosensor is in operation. | 07-14-2011 |
20110204872 | PN JUNCTION CHEMICAL SENSOR (originally published as A SENSOR DEVICE AND METHOD OF DETECTING PARTICLES) - A sensor device ( | 08-25-2011 |
20110217206 | SENSOR AND A METHOD OF ASSEMBLING A SENSOR - “Click-assembly” methods of assembling a sensor for sensing biologically-active molecules by measuring impedance changes, are disclosed, comprising supporting a bio-sensor on a carrier, the bio-sensor comprising an electronic component having at least one micro-electrode and at least one electrical contact, functionalizing the bio-sensor by physically or chemically coupling a bio-receptor molecule to each of the at least one micro-electrode, and subsequently assembling the bio-sensor with a micro-fluidic unit by means of a clamp which clamps the bio-sensor with the micro-fluidic unit, such that in use a fluid introduced into the micro-fluidic unit is able to contact the bio-receptor and is isolated from the electrical contact. The clamp may be a spring, and the method may avoid a requirement for sealing by chemical or thermal means and thereby avoid damaging the bio-receptor. Sensors which can be assembled according to such methods are also disclosed. | 09-08-2011 |
20120132961 | HETEROJUNCTION BIPOLAR TRANSISTOR MANUFACTURING METHOD AND INTEGRATED CIRCUIT COMPRISING A HETEROJUNCTION BIPOLAR TRANSISTOR - Disclosed is a method of manufacturing a heterojunction bipolar transistor comprising a substrate, an upper region of said substrate comprising an active region of the bipolar transistor bordered by shallow trench insulation, said active region comprising a buried collector region extending to a depth beyond the depth of the shallow trench insulation, the method comprising forming a trench in the substrate adjacent to said active region, said trench extending through the shallow trench insulation; at least partially filling said trench with an impurity; and forming a collector sinker in the substrate by developing said impurity to extend into the substrate to a depth beyond the depth of the shallow trench insulation. An IC comprising a heterojunction bipolar transistor manufactured by this method is also disclosed. | 05-31-2012 |
20120132999 | METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR AND BIPOLAR TRANSISTOR - Consistent with an example embodiment, there is method of manufacturing a bipolar transistor comprising providing a substrate including an active region; depositing a layer stack; forming a base window over the active region in said layer stack; forming at least one pillar in the base window, wherein a part of the pillar is resistant to polishing; depositing an emitter material over the resultant structure, thereby filling said base window; and planarizing the deposited emitter material by polishing. Consistent with another example embodiment, a bipolar transistor may be manufactured according to the afore-mentioned method. | 05-31-2012 |
20130032891 | METHOD OF MANUFACTURING AN IC COMPRISING A PLURALITY OF BIPOLAR TRANSISTORS AND IC COMPRISING A PLURALITY OF BIPOLAR TRANSISTORS - A method of manufacturing an integrated circuit comprising bipolar transistors including first and second type bipolar transistors, the method comprising providing a substrate comprising first isolation regions each separated from a second isolation region by an active region comprising a collector impurity of one of the bipolar transistors; forming a base layer stack over the substrate; forming a first emitter cap layer of a first effective thickness over the base layer stack in the areas of the first type bipolar transistor; forming a second emitter cap layer of a second effective thickness different from the first effective thickness over the base layer stack in the areas of the second type bipolar transistor; and forming an emitter over the emitter cap layer of each of the bipolar transistors. An IC in accordance with this method. | 02-07-2013 |
20130056855 | METHOD OF MANUFACTURING IC COMPRISING A BIPOLAR TRANSISTOR AND IC - Disclosed is an integrated circuit and a method of manufacturing an integrated circuit comprising a bipolar transistor, the method comprising providing a substrate comprising a pair of isolation regions separated by an active region comprising a collector; forming a base layer stack over said substrate; forming a migration layer having a first migration temperature and an etch stop layer; forming a base contact layer having a second migration temperature; etching an emitter window in the base contact layer, thereby forming cavities extending from the emitter window; and exposing the resultant structure to the first migration temperature in a hydrogen atmosphere, thereby filling the cavities with the migration layer material. | 03-07-2013 |
20130087799 | BIPOLAR TRANSISTOR MANUFACTURING METHOD, BIPOLAR TRANSISTOR AND INTEGRATED CIRCUIT - Disclosed is a method of manufacturing a bipolar transistor, comprising providing a substrate ( | 04-11-2013 |
20140151844 | INTEGRATED CIRCUITS SEPARATED BY THROUGH-WAFER TRENCH ISOLATION - An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material. | 06-05-2014 |
20140162426 | Bipolar transistor manufacturing method, bipolar transistor and integrated circuit - Disclosed is a method of manufacturing a bipolar transistor, comprising providing a substrate ( | 06-12-2014 |
20140167055 | METHOD OF PROCESSING A SILICON WAFER AND A SILICON INTEGRATED CIRCUIT - Methods and systems for processing a silicon wafer are disclosed. A method includes providing a flash memory region in the silicon wafer and providing a bipolar transistor with a polysilicon external base in the silicon wafer. The flash memory region and the bipolar transistor are formed by depositing a single polysilicon layer common to both the flash memory region and the bipolar transistor. | 06-19-2014 |
20140312356 | Semiconductor Device - A semiconductor device and a method of making the same. The device includes a semiconductor substrate. The device also includes a bipolar transistor on the semiconductor substrate. The bipolar transistor includes an emitter. The bipolar transistor also includes a base located above the emitter. The bipolar transistor further includes a laterally extending collector located above the base. The collector includes a portion that extends past an edge of the base. | 10-23-2014 |
20140327110 | METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR, BIPOLAR TRANSISTOR AND INTEGRATED CIRCUIT - Consistent with an example embodiment, a bipolar transistor comprises an emitter region vertically separated from a collector region in a substrate by a base region. The bipolar transistor further comprises a field plate electrically connected to the emitter region; the field plate extends from the emitter region along the base region into the collector region and the field plate is laterally electrically insulated from the base region and the collector region by a spacer. The spacer comprises an electrically isolating material that includes a silicon nitride layer and is vertically electrically isolated from the substrate by a further electrically isolating material. | 11-06-2014 |
20140342527 | INTEGRATED CIRCUITS SEPARATED BY THROUGH-WAFER TRENCH ISOLATION - An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material. | 11-20-2014 |
20140347131 | SEMICONDUCTOR DEVICE AND CIRCUIT WITH DYNAMIC CONTROL OF ELECTRIC FIELD - A circuit, comprising a semiconductor device with one or more field gate terminals for controlling the electric field in a drift region of the semiconductor device; and a feedback circuit configured to dynamically control a bias voltage or voltages applied to the field gate terminal or terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at a further node in the circuit. | 11-27-2014 |
20140347135 | BIPOLAR TRANSISTORS WITH CONTROL OF ELECTRIC FIELD - The invention provides a bipolar transistor circuit and a method of controlling a bipolar transistor, in which the bipolar transistor has a gate terminal for controlling the electric field in a collector region of the transistor. The bias voltage applied to the gate terminal is controlled to achieve different transistor characteristics. | 11-27-2014 |
20150041862 | METHOD OF MANUFACTURING IC COMPRISING A BIPOLAR TRANSISTOR AND IC - Disclosed is a method of manufacturing an integrated circuit comprising a bipolar transistor, the method comprising providing a substrate ( | 02-12-2015 |