| Patent application number | Description | Published |
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| 20100156559 | MILLIMETER WAVE TRANSMISSION LINE FOR SLOW PHASE VELOCITY - A grounding plate and a transmission line are provided in a stack of dielectric material layers. First transmission line portions having a first width are alternately interlaced with second transmission line portions having a second width in the transmission line. The second width is greater than the first width so that inductance of the transmission line is increased relative to a transmission line having a fixed width. Metal fins may be provided between the grounding plate and the transmission line in the stack of the dielectric material layers. The metal fins may be grounded to the grounding plate to increase capacitance between the transmission line and the grounding plate. The increase in the inductance and the capacitance per unit length between the transmission line and the grounding plate is advantageously employed to provide a reduced phase velocity for electromagnetic signal transmitted through the transmission line. A design structure for the transmission line structure is provided. | 06-24-2010 |
| 20110241796 | On-Chip high performance slow-wave coplanar waveguide structures, method of manufacture and design structure - On-chip high performance slow-wave coplanar waveguide structures, method of manufacture and design structures for integrated circuits are provided herein. The structure includes at least one ground and a signal layer provided in a same plane as the at least one ground. The signal layer has at least one alternating wide portion and narrow portion. The wide portion extends toward the at least one ground. | 10-06-2011 |
| 20120096419 | METHODOLOGY ON DEVELOPING METAL FILL AS LIBRARY DEVICE AND DESIGN STRUCTURE - A methodology is provided on developing metal fill as a library device and, in particular, a method of generating a model of the effects (e.g., capacitance) of metal fills in an integrated circuit and a design structure. The method is implemented on a computing device and includes generating a model for effects of metal fill in an integrated circuit. The metal fill model is generated prior to completion of a layout design for the integrated circuit. | 04-19-2012 |
| 20120139667 | ON-CHIP HIGH PERFORMANCE SLOW-WAVE COPLANAR WAVEGUIDE STRUCTURES, METHOD OF MANUFACTURE AND DESIGN STRUCTURE - On-chip high performance slow-wave coplanar waveguide structures, method of manufacture and design structures for integrated circuits are provided herein. The structure includes at least one ground and signal layer provided in a same plane as the at least one ground. The signal layer has at least one alternating wide portion and narrow portion with an alternating thickness. The wide portion extends toward the at least one ground. | 06-07-2012 |
| 20120139668 | ON-CHIP HIGH PERFORMANCE SLOW-WAVE MICROSTRIP LINE STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES - On-chip high performance slow-wave microstrip line structures, methods of manufacture and design structures for integrated circuits are provided herein. The structure includes at least one ground and a signal layer provided in a different plane than the at least one ground. The signal layer has at least one alternating wide portion and narrow portion with an alternating thickness such that a height of the wide portion is different than a height of the narrow portion with respect to the at least one ground. | 06-07-2012 |
| 20120193121 | HIGH PERFORMANCE ON-CHIP VERTICAL COAXIAL CABLE, METHOD OF MANUFACTURE AND DESIGN STRUCTURE - A high performance on-chip vertical coaxial cable structure, method of manufacturing and design structure thereof is provided. The coaxial cable structure includes an inner conductor and an insulating material that coaxially surrounds the inner conductor. The structure further includes an outer conductor which surrounds the insulating material. Both the inner and outer conductors comprise a plurality of metal layers formed on different wiring levels and interconnected between the different wiring levels by conductors. The coaxial cable structure is formed upon a surface of a semiconductor substrate and is oriented in substantially perpendicular alignment with the surface. | 08-02-2012 |
| 20120256678 | Variable Impedance Single Pole Double Throw CMOS Switch - A single pole double throw (SPDT) semiconductor switch includes a series connection of a first transmitter-side transistor and a first reception-side transistor between a transmitter node and a reception node. Each of the two first transistors is provided with a gate-side variable impedance circuit, which provides a variable impedance connection between a complementary pair of gate control signals. Further, the body of each first transistor can be connected to a body bias control signal through a body-side variable impedance circuit. In addition, the transmitter node is connected to electrical ground through a second transmitter-side transistor, and the reception node is connected to electrical ground through a second reception-side transistor. Each of the second transistors can have a body bias that is tied to the body bias control signals for the first transistors so that switched-off transistors provide enhanced electrical isolation. | 10-11-2012 |
| 20140059509 | METHODOLOGY ON DEVELOPING METAL FILL AS LIBRARY DEVICE - A methodology for developing metal fill as a library device and, in particular, a method of generating a model of the effects (e.g., capacitance) of metal fills in an integrated circuit and a design structure is disclosed. The method is implemented on a computing device and includes generating a model for effects of metal fill in an integrated circuit. The metal fill model is generated prior to completion of a layout design for the integrated circuit. | 02-27-2014 |
| 20140065817 | HIGH PERFORMANCE ON-CHIP VERTICAL COAXIAL CABLE, METHOD OF MANUFACTURE AND DESIGN STRUCTURE - A high performance on-chip vertical coaxial cable structure, method of manufacturing and design structure thereof is provided. The coaxial cable structure includes an inner conductor and an insulating material that coaxially surrounds the inner conductor. The structure further includes an outer conductor which surrounds the insulating material. Both the inner and outer conductors comprise a plurality of metal layers formed on different wiring levels and interconnected between the different wiring levels by conductors. The coaxial cable structure is formed upon a surface of a semiconductor substrate and is oriented in substantially perpendicular alignment with the surface. | 03-06-2014 |
| 20150054592 | ON-CHIP VERTICAL THREE DIMENSIONAL MICROSTRIP LINE WITH CHARACTERISTIC IMPEDANCE TUNING TECHNIQUE AND DESIGN STRUCTURES - A vertical three dimensional (3D) microstrip line structure for improved tunable characteristic impedance, methods of manufacturing the same and design structures are provided. More specifically, a method is provided that includes forming a first microstrip line structure within a back end of the line (BEOL) stack. The method further includes forming a second microstrip line structure separated from the BEOL stack by a predetermined horizontal distance. | 02-26-2015 |
| 20150054595 | THREE DIMENSIONAL BRANCHLINE COUPLER USING THROUGH SILICON VIAS AND DESIGN STRUCTURES - A three dimensional (3D) branchline coupler using through silicon vias (TSV), methods of manufacturing the same and design structures are disclosed. The method includes forming a first waveguide structure in a first dielectric material. The method further includes forming a second waveguide structure in a second dielectric material. The method further includes forming through silicon vias through a substrate formed between the first dielectric material and the second dielectric material, which connects the first waveguide structure to the second waveguide structure. | 02-26-2015 |
