Patent application number | Description | Published |
20100255225 | THIN FILM COATING AND METHOD OF MAKING THE SAME - The present invention provides low-E thin film optical stacks with improved optical and infrared reflecting properties and methods of making the same. More specifically, the present invention provides for a metal oxide thin film coating that exhibits lower emissivity values than its predecessor due to the inclusion of an oxidizer in the metal oxide deposition process, such as a strong acid such as nitric acid. The present invention also provides for a method that increases the coating efficiencies of the thin films described herein. | 10-07-2010 |
20110174333 | PROCESS AND INSTALLATION FOR SURFACE PREPARATION BY DIELECTRIC BARRIER DISCHARGE - A process for surface preparation of a substrate ( | 07-21-2011 |
20110183083 | PROCESS AND INSTALLATION FOR DEPOSITING FILMS ONTO A SUBSTRATE - A process for depositing a film onto a substrate ( | 07-28-2011 |
20110200763 | PROCESS AND INSTALLATION FOR DEPOSITING FILMS SIMULTANEOUSLY ONTO BOTH SIDES OF A SUBSTRATE - A process for the simultaneous deposition of films onto both sides of a substrate ( | 08-18-2011 |
20130038196 | ELECTRODE FOR A DBD PLASMA PROCESS - A planar electrode for the DBD plasma treatment of a surface comprises a metal casing ( | 02-14-2013 |
20130089684 | INSULATING GLAZING - The invention relates to triple glazing comprising at least one glass sheet that has a system of layers on one side which are produced using sputtering and include at least one metal layer that reflects infrared radiation. The at least one glass sheet has a set of low-emission layers on the other side, said set of layers comprising one or more oxide layers that are deposited using gas phase pyrolysis. The disclosed glazing has a minimum light transmittance of 60 percent (standard EN 410, illuminant D65 at 2°) with 4 mm thick glass sheets. | 04-11-2013 |
20130101760 | INSULATING GLAZING - The invention relates to double glazing comprising at least one glass sheet that has a set of low-emission layers on each side, one side being coated with layers which are produced using sputtering and which include at least one metal layer that reflects infrared radiation. The other side of said at least one glass sheet comprises one or more metal oxide layers that are deposited using gas phase pyrolysis. The disclosed glazing has a minimum light transmittance of 60 percent (with 4 mm thick clear glass sheets). | 04-25-2013 |
20140230731 | INSTALLATION FOR DEPOSITING FILMS ONTO A SUBSTRATE - An installation, comprising a chamber comprising two ends, a transport unit and a support unit which introduce a two-sided substrate into the chamber, a stabilized high-voltage high-frequency power supply of at least 200 kW, comprising an HF transformer comprising a primary and a secondary circuit connected to terminals, at least two electrodes being connected to the terminals of the secondary circuit, said electrodes being placed on each side of the substrate, at least one dielectric barrier placed between the at least two electrodes; a power supply regulation/control unit placed upstream of the HF transformer that is capable of increasing an active power/reactive power ratio, an introducing unit for introducing at least one reactive substance into the chamber, and an extracting unit for extracting residual substances, wherein an adjustable inductor is placed in the secondary circuit of the transformer in parallel with a circuit comprising the at least two electrodes, and the adjustable inductor enables a phase shift between a voltage generated between the electrodes and a total current delivered by the high-voltage source to be modulated, and the power supply regulation/control unit, placed on the primary circuit of the transformer, and/or a unit for controlling the inductor being capable of generating harmonics extending a time during which a current flows between the electrodes, wherein the installation is suitable for depositing a film onto an inorganic substrate. | 08-21-2014 |
Patent application number | Description | Published |
20120258260 | METHOD AND DEVICE FOR POLARIZING A DBD ELECTRODE - The invention relates to a device for treating the surface of a substrate by means of dielectric barrier discharge for generating a filamentary plasma, including a reaction chamber comprising a mixture having a composition such that, when in contact with the plasma, the mixture decomposes and generates species capable of deposition in the form of a layer mostly or totally on the substrate, wherein at least two electrodes area provided in said chamber, with one electrode being subjected to a high AC voltage, and are arranged on either side of the substrate, at least one dielectric barrier (DBD) arranged between said at least two electrodes, and a THT/HF transformer comprising a secondary circuit, in which a direct current (DC) power source is provided in series in the secondary circuit such that the chemical species generated in the plasma in the form of electrically positive or negative ions are selectively attracted by the target substrate inserted in the reaction chamber and arranged between said at least two electrodes, and repelled by electrodes having a corresponding charge. | 10-11-2012 |
20140087101 | TRANSPARENT GLASS SUBSTRATE HAVING A COATING OF CONSECUTIVE LAYERS - The invention relates to a transparent glass substrate having a coating including, in order: a first reflected color neutralization layer; a low-emissivity second layer essentially made up of SnO2:F and having a thickness between 455 and 800 nm; and a third layer that is essentially made up of SiOx, x being less than or equal to 2, and has a thickness between 40 and 65 nm or between 140 and 180 nm. The invention also relates to a double glass sheet and a triple glass sheet, manufactured from such a glass substrate, and to a window comprising said glass sheets. | 03-27-2014 |
20140099451 | METHOD FOR DEPOSITING LAYERS ON A GLASS SUBSTRATE BY MEANS OF LOW-PRESSURE PECVD - The invention relates to a method for producing metal or semiconductor oxide, nitride or oxynitride films on a substrate, by means of the PECVD method, including the steps that involve: (i) having a low-pressure PECVD device including at least one plasma source that includes at least one electrode connected to an AC, DC, or drawn DC generator for depositing said films on the substrate; and (ii) applying electrical power to the plasma source and applying, on the substrate, an oxide film gas precursor made of metal or semiconductor nitrides or oxynitrides and a reactive gas made of oxygen, oxygen derivatives, or nitrogen derivatives. The invention also relates to metal or semiconductor oxide, nitride, or oxynitride films obtained by the method. | 04-10-2014 |