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Entley

William Entley, Wakefield, MA US

Patent application numberDescriptionPublished
20130025788Distributed, Non-Concentric Multi-Zone Plasma Source Systems, Methods and Apparatus - A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.01-31-2013

William R. Entley, Wakefield, MA US

Patent application numberDescriptionPublished
20120031876SYSTEMS, METHODS AND APPARATUS FOR SEPARATE PLASMA SOURCE CONTROL - A plasma source includes multiple ring plasma chambers, multiple primary windings, multiple ferrites and a control system. Each one of the primary windings is wrapped around an exterior one of the ring plasma chambers. Each one of the plurality of the ring plasma chamber passes through a respective portion of the plurality of ferrites. The control system is coupled to each of the ring plasma chambers. A system and method for generating and using a plasma are also described.02-09-2012
20120034394DISTRIBUTED MULTI-ZONE PLASMA SOURCE SYSTEMS, METHODS AND APPARATUS - A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber and multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites. A system and method for generating a plasma are also described.02-09-2012
20120035766SYSTEMS, METHODS AND APPARATUS FOR CHOKED FLOW ELEMENT EXTRACTION - A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber, multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites and multiple plasma chamber outlets coupling the plasma chamber to a process chamber. Each one of the plasma chamber outlets having a respective plasma restriction. A system and method for generating a plasma are also described.02-09-2012
20140096908DISTRIBUTED MULTI-ZONE PLASMA SOURCE SYSTEMS, METHODS AND APPARATUS - A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.04-10-2014

William Robert Entley, Center Valley, PA US

Patent application numberDescriptionPublished
20150364321Alkyl-Alkoxysilacyclic Compounds and Methods for Depositing Films Using Same - A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an alkyl-alkoxysilacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.12-17-2015
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