Patent application number | Description | Published |
20120005192 | METHOD AND APPARATUS FOR ENHANCING WEBPAGE BROWSING - The present invention provides a method and apparatus for enhancing webpage browsing. The method of the invention includes a predicting step which predicts, for a first block in the webpage, a subsequent second block, based on a browsing history of blocks of webpages by at least one user; and a link generating step of automatically generating a link pointing to the second block based on a result of the predicting step. The apparatus includes: predicting means configured to predict, for a first block in the webpage, a subsequent second block, based on a browsing history of blocks of web pages by at least one user; and link generating means configured to automatically generate a link pointing to the second block based on a result of the predicting means. | 01-05-2012 |
20120268400 | METHOD AND SYSTEM FOR REVISING USER INPUT POSITION - A method and system for revising user input position. The method for revising user input position includes, detecting input position of a user, revising the input position of the user based on a predefined revising model, to obtain an accurate position, where, a wrong input position of the user is at least analyzed in advance to obtain the revising model and in response to obtaining the accurate position, triggering an application corresponding to the accurate position. With the technology for automatically revising the input position of the user on the touch screen provided by the invention, it is possible to help the user more conveniently locate the needed content, so as to save the time of the user and improve the user experience. | 10-25-2012 |
20120319983 | METHOD AND SYSTEM FOR REVISING USER INPUT POSITION - A method and system for revising user input position. The method for revising user input position includes, detecting input position of a user, revising the input position of the user based on a predefined revising model, to obtain an accurate position, where, a wrong input position of the user is at least analyzed in advance to obtain the revising model and in response to obtaining the accurate position, triggering an application corresponding to the accurate position. With the technology for automatically revising the input position of the user on the touch screen provided by the invention, it is possible to help the user more conveniently locate the needed content, so as to save the time of the user and improve the user experience. | 12-20-2012 |
Patent application number | Description | Published |
20080206963 | Cleaving process to fabricate multilayered substrates using low implantation doses - A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner. | 08-28-2008 |
20090032888 | SEMICONDUCTOR DEVICE - A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is formed subsequent to the cleaning process. | 02-05-2009 |
Patent application number | Description | Published |
20140232428 | Prognostic Circuit of Electromigration Failure for Integrated Circuit - A prognostic circuit of EM failure for IC is disclosed, which includes a current monitoring module, the current monitoring module includes a current output module electrically connected with a monitoring metal wire, and one or more conductive metals covered by an oxide layer and electrically insulated with the monitoring metal wire, the current output module includes at least one current source, the conductive metal is electrically connected with the output port of the current monitoring module, and the monitoring metal wire is surrounded by the conductive metal. The above prognostic circuit can give a warning for short-circuit failure caused by a whisker created by EM. Meanwhile, the prognostic circuit of the present disclosure can also be added a resistance warning, and it can indicate the failure of the resistance increased by EM and the short circuit caused by whisker, so as to greatly increase the warning efficiency of the EM. | 08-21-2014 |
20150051851 | Method and Device of Remaining Life Prediction for Electromigration Failure - A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime τ1, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point τ2, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time τ3, acquiring a remaining life of electromigration failure corresponding to τ2′ based on τ1, τ2 and τ3. A device for remaining life prediction for electromigration failure is also disclosed. | 02-19-2015 |