Patent application number | Description | Published |
20090008034 | PLASMA PROCESSING APPARATUS - A plasma generation chamber and a processing chamber are isolated from each other by a barrier wall member disposed between them. The barrier wall member includes two plate members and stacked one on top of the other over a gap, a plurality of through holes and, via which hydrogen radicals are allowed to pass, are respectively formed at the plate member and the plate member. The through holes at one plate member are formed with an offset relative to the through holes formed at the other plate member and the plate members are both constituted of an insulating material that does not transmit ultraviolet light. | 01-08-2009 |
20090081565 | METHOD FOR FORMING ETCHING MASK, CONTROL PROGRAM AND PROGRAM STORAGE MEDIUM - Disclosed is a method for forming an etching mask, capable of precisely and easily forming an etching mask having a microscopic pattern of a non-straight-line shape. An exposure pattern of a straight-line shape is transferred to a photoresist by using a first reticle and developed, and after a trimming process, a SiO | 03-26-2009 |
20090179003 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM - An ashing process in which an etching mask is removed through ashing by supplying hydrogen radicals toward a wafer W being heated to a predetermined temperature and a restoration process in which the film quality of a low dielectric constant insulating film having been damaged during an etching process is restored while, at the same time, rendering the low dielectric constant insulating film exposed at a recessed portion into a hydrophobic state by supplying a gas containing a β-diketone compound with an ignition point equal to or higher than 300° C. toward the wafer W having undergone the ashing process, are executed. | 07-16-2009 |
20110065049 | PATTERN FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A disclosed mask pattern forming method includes isotropically coating a surface of a resist pattern array having a predetermined line width with a silicon oxide film, embedding a gap in the resist pattern array coated by the silicon oxide film with a carbon film, removing the carbon film from the upper portion and etching back the carbon film while leaving the carbon film within the gap in any order, removing the remaining carbon film and etching back the upper portion of the resist pattern array to have a predetermined film thickness in any order, and forming a first mask pattern array which has a center portion having a predetermined width and film sidewall portions sandwiching the predetermined width, and arranged interposing a space width substantially the same as the predetermined line width with an asking process provided to the resist pattern array exposed from the removed silicon oxide film. | 03-17-2011 |
20110104901 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes a process of forming a first organic film pattern on a to-be-etched layer on a substrate, a process of forming a silicon oxide film coating the first organic film pattern in an isotropic manner, a process of etching the silicon oxide film to form a first mask pattern in such a manner to cause the width of the line part of the first organic film pattern to have a fixed proportion with respect to a thickness of the silicon oxide film that coats a surface of the line part in the isotropic manner, a process of forming a second organic film pattern coating the silicon oxide film, a process of forming a second mask pattern that includes the silicon oxide film on a side face part in an area that is coated by the second organic film pattern, and a process of, in an area other than the area that is coated by the second organic film pattern, forming a third mask pattern in which an even number of the silicon oxide films are arranged. | 05-05-2011 |
20110201206 | METHOD FOR FORMING AMORPHOUS CARBON NITRIDE FILM, AMORPHOUS CARBON NITRIDE FILM, MULTILAYER RESIST FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND STORAGE MEDIUM IN WHICH CONTROL PROGRAM IS STORED - An amorphous carbon film, which has excellent etching resistance and is capable of reducing reflectance when a resist film is exposed to light, is form. A method for manufacturing a semiconductor device includes forming an object film to be etched on a wafer, supplying a process gas containing a CO gas and an N | 08-18-2011 |
20120031434 | SUBSTRATE CLEANING METHOD - There is provided a substrate cleaning method capable of cleaning a substrate on which a fine pattern is being formed in a short time with a simple configuration without having a harmful influence on the fine pattern. In the method, the substrate is transferred from a processing chamber for performing a process on the surface of the substrate therein to a cleaning chamber for cleaning the substrate therein. The substrate is cooled to a temperature in the cleaning chamber. A superfluid is supplied to the surface of the substrate, and contaminant components in the fine pattern are flowed out along with the superfluid as the superfluid flows over from the surface of the substrate. | 02-09-2012 |
20120190206 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes forming a first organic film pattern on a to-be-etched layer on a substrate, forming a silicon oxide film coating the first organic film pattern-etching the silicon oxide film to form a first mask pattern to cause the width of the line part of the first organic film pattern to have a fixed proportion with respect forming a second organic film pattern coating the silicon oxide film, forming a second mask pattern including the silicon oxide film on a side face part in an area coated by the second organic film pattern, and forming, in an area other than the area coated by the second organic film pattern, a third mask pattern in which an even number of the silicon oxide films are arranged. | 07-26-2012 |
20130122429 | PATTERN FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A disclosed manufacturing method of a semiconductor device includes laminating a substrate, an etched film, an anti-reflective coating film, and a resist film; forming a pattern made of the resist film using a photolithographic technique; forming the third mask pattern array by a mask pattern forming method; and a seventh step of forming a fourth mask pattern array by processing the etched film using the third mask pattern array. | 05-16-2013 |
20130302993 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND PLASMA ETCHING APPARATUS - A semiconductor device manufacturing method includes a plasma etching step for etching an etching target film formed on a substrate accommodated in a processing chamber. In the plasma etching step, a processing gas including a gaseous mixture containing predetermined gases is supplied into the processing chamber, and a cycle including a first step in which a flow rate of at least one of the predetermined gases is set to a first value during a first time period and a second step in which the flow rate thereof is set to a second value that is different from the first value during a second time period is repeated consecutively at least three times without removing a plasma. The first time period and the second time period are set to about 1 to 15 seconds. | 11-14-2013 |
Patent application number | Description | Published |
20120164839 | SUBSTRATE PROCESSING METHOD - There is provided a substrate processing method capable of increasing an etching rate of a copper member without using a halogen gas. A Cu layer | 06-28-2012 |
20120244716 | SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM - There is provided a substrate processing method capable of etching a layer containing, at least, platinum without using a halogen gas. When etching the platinum-manganese layer on a wafer W by using a tantalum (Ta) layer | 09-27-2012 |
20130098868 | DRY ETCHING METHOD FOR METAL FILM - A method for performing dry etching on a metal film containing Pt via a mask layer includes performing dry etching on the metal film by generating a plasma of an etching gas including a gaseous mixture of H | 04-25-2013 |
20130196511 | ETCHING METHOD AND ETCHING APPARATUS - An etching method of etching a periodic pattern formed by self-assembling a first polymer and a second polymer of a block copolymer that is capable of being self-assembled, the etching method includes supplying a high frequency power which is set such that a great amount of ion energy is distributed within a range smaller than ion energy distribution at which an etching yield of the first polymer is generated and larger than or equal to ion energy distribution at which an etching yield of the second polymer is generated, and supplying a predetermined gas, generating plasma from the supplied gas by the high frequency power, and etching the periodic pattern on a processing target object by using the generated plasma. | 08-01-2013 |
20140083979 | DEPOSIT REMOVAL METHOD - A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber. | 03-27-2014 |
20140251945 | METHOD OF ETCHING METAL LAYER - In a method of etching a metal layer of an object to be processed, the metal layer is etched by ion sputtering etching while forming a protective film containing carbon on a surface of a mask of the object. The object is exposed to an oxygen plasma after etching the metal layer. The object is exposed to hexafluoroacetylacetone after exposing the object to the oxygen plasma. | 09-11-2014 |
20140287591 | METHOD FOR ETCHING FILM CONTAINING COBALT AND PALLADIUM - Disclosed is a method for etching a film contains cobalt and palladium is provided. A hard mask is provided on the film. The method film includes a process “a” of etching the film by ion sputter etching, a process “b” of exposing a workpiece to plasma of a first gas containing halogen elements after the process “a” of etching of the film, a process “c” of exposing the workpiece to plasma of a second gas containing carbons after the process “b” of exposing the workpiece to the plasma of the first gas, and a process “d” of exposing the workpiece to plasma of a third gas containing a noble gas after the process “c” of exposing the workpiece to the plasma of the second gas. In the method, a temperature of a placement table on which the workpiece is placed is set to a first temperature of 10° C. or less in the process “a”, process “b” and process “c”. | 09-25-2014 |
20150013908 | ETCHING APPARATUS - An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask. | 01-15-2015 |
20150048049 | METHOD AND APPARATUS FOR FORMING A PERIODIC PATTERN USING A SELF-ASSEMBLED BLOCK COPOLYMER - A method for causing a first polymer and a second polymer of a block copolymer to be self-assembled on an underlayer film and forming a periodic pattern in a guide layer is provided. The method includes a first etching process of etching the second polymer by plasma generated from a first gas, a first film deposition process of depositing a first protective film on surfaces of the first polymer and the guide layer except for an etched portion of the second polymer by plasma generated from a second gas after the first etching process, and a second etching process of further etching the second polymer by the plasma generated from the first gas after the first film deposition process. | 02-19-2015 |
20150079790 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - This semiconductor device manufacturing method is provided with: a film-forming step wherein a silicon nitride layer or a silicon oxide layer is formed such that a side wall portion of a silicon-containing layer, which is formed on a substrate and patterned, is covered with the silicon nitride layer or the silicon oxide layer; and a plasma etching step wherein the silicon-containing layer is selectively removed, and the silicon nitride layer or the silicon oxide layer formed on the side wall portion is left. In the plasma etching step, an etching gas containing SF | 03-19-2015 |
20150104951 | METHOD FOR ETCHING COPPER LAYER - Provided is a method of etching a copper layer. The method includes generating plasma of a processing gas within a processing container which accommodates an object to be processed that includes the copper layer and a metal mask formed on the copper layer. The metal mask contains titanium. In addition, the processing gas includes CH | 04-16-2015 |
20150132970 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon. | 05-14-2015 |
20150214474 | ETCHING METHOD AND SUBSTRATE PROCESSING APPARATUS - An etching method is provided for etching a multilayer film material that includes a metal laminated film having an insulating layer arranged between a first magnetic layer and a second magnetic layer. The etching method includes an etching step of generating a plasma by supplying a first gas to a processing chamber and etching the metal laminated film using the generated plasma. The first gas is a gas containing PF | 07-30-2015 |
20150247235 | METHOD OF CLEANING PLASMA PROCESSING APPARATUS - There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times. | 09-03-2015 |
Patent application number | Description | Published |
20120190207 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus performs plasma process by using a hydrogen radical generated by plasma-exciting a process gas containing hydrogen on a substrate to be processed. A high-frequency antenna includes an antenna device that is configured to resonate at a half-wavelength of high-frequency power applied from the high-frequency power source by opening two ends of the antenna device and grounding a center point of the antenna device. A barrier wall member for separating a plasma generating chamber and a plasma processing chamber includes a plurality of plate-shaped members having a plurality of openings through which the hydrogen radical passes, formed of an insulating material through which UV light does not pass, and overlapping each other at a predetermined interval, wherein the openings of one plate-shaped member are provided not to overlap the openings of another plate-shaped member. | 07-26-2012 |
20120244718 | SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM - Disclosed is a substrate processing method capable of preventing an etching rate from being deteriorated when a high aspect ratio hole or trench is formed on an oxide film. When a high aspect ratio hole or trench is formed on an oxide film by etching the oxide film formed on a wafer using a hard mask layer having an opening and made of silicon, the oxide film corresponding to the opening is etched using plasma generated from a processing gas containing a C | 09-27-2012 |
20140110373 | METHOD OF ETCHING COPPER LAYER AND MASK - A method of etching a copper layer of a target object including, on the copper layer, a mask having a pattern to be transferred onto the copper layer is provided. The method includes etching the copper layer by using plasma of a first gas containing a hydrogen gas; and processing the target object by using plasma of a second gas containing a hydrogen gas and a gas (hereinafter, referred to as “deposition gas”) that is deposited on the target object. Further, the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately. | 04-24-2014 |
20140120635 | ETCHING METHOD AND SUBSTRATE PROCESSING APPARATUS - A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials can be optimized. An etching method of etching a multilayered film including a metal stacked film in which an insulating layer is interposed between a first magnetic layer and a second magnetic layer includes etching the metal stacked film with plasma generated by supplying a gas containing at least C, O, and H into a processing chamber; and treating the metal stacked film with plasma generated by supplying a gas containing at least a CF | 05-01-2014 |
20140141532 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing method is used to etch a multilayered material having a stacked structure, in which a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material are stacked in sequence, in a plasma processing apparatus including a processing chamber that partitions a processing space where plasma is generated and a gas supply unit that supplies a processing gas into the processing space. The plasma processing method includes a mask forming process of forming a mask on the second magnetic layer by etching the mask material; an etching process of supplying the processing gas into the processing chamber to generate plasma, etching the second magnetic layer by the mask, and stopping the etching on a surface of the insulating layer. Further, the second magnetic layer contains CoFeB, the insulating layer contains MgO, and the processing gas contains H | 05-22-2014 |
20150050750 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing method of etching a multilayered material having a structure where a first magnetic layer | 02-19-2015 |
20150064925 | DEPOSIT REMOVING METHOD AND GAS PROCESSING APPARATUS - A deposit removing method includes an exposing process of heating and exposing a substrate to oxygen plasma; and a cycle process in which the substrate is exposed to an atmosphere of a mixture gas of a hydrogen fluoride gas and an alcohol gas, and a first period during which a total pressure of the mixture gas or a partial pressure of the alcohol gas is set to be a first total pressure or a first partial pressure and a second period during which the total pressure or the partial pressure is set to be a second total pressure lower than the first total pressure or a second partial pressure lower than the first partial pressure are repeated multiple cycles. A supply amount of the mixture gas from a first region including a central portion of the substrate is larger than that from a second region outside the first region. | 03-05-2015 |
20150179408 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus and a substrate processing method can perform a plasma process using a microwave and a heat treatment through irradiation of the microwave on a substrate. A substrate processing apparatus | 06-25-2015 |