Patent application number | Description | Published |
20130087739 | SCINTILLATOR MATERIAL AND SCINTILLATION DETECTOR - A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a −C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime. | 04-11-2013 |
20130323490 | PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF SEMIPOLAR GALLIUM NITRIDE BOULES - Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules. | 12-05-2013 |
20140147650 | HIGH QUALITY GROUP-III METAL NITRIDE CRYSTALS, MEHODS OF MAKING, AND METHODS OF USE - High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices. | 05-29-2014 |
20150132926 | PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES - Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. | 05-14-2015 |
Patent application number | Description | Published |
20100279503 | Method for Producing an Electrically Conductive Connection - A method for producing an electrically conductive connection between a first surface of a semiconductor substrate and a second surface of the semiconductor substrate includes producing a hole, forming an electrically conductive layer that includes tungsten, removing the electrically conductive layer from the first surface of the semiconductor substrate, filling the hole with copper and thinning the semiconductor substrate. The hole is produced from the first surface of the semiconductor substrate into the semiconductor substrate. The electrically conductive layer is removed from the first surface of the semiconductor substrate, wherein the electrically conductive layer remains at least with reduced thickness in the hole. The semiconductor substrate is thinned starting from a surface, which is an opposite surface of the first surface of the semiconductor substrate, to obtain the second surface of the semiconductor substrate with the hole being uncovered at the second surface of the semiconductor substrate. | 11-04-2010 |
20110309423 | SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD FOR MANUFACTURING - A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the semiconductor body by an insulation layer, wherein the trench has a top trench portion which extends from the semiconductor surface at least to a depth which is greater than a depth of the first semiconductor area, wherein the trench further has a bottom trench portion extending subsequent to the top trench portion at least up to the second semiconductor area, and wherein the top trench portion has a first lateral dimension and the bottom trench portion has a second lateral dimension which is greater than the first lateral dimension. | 12-22-2011 |
20130181281 | Semiconductor Transistor Having Trench Contacts and Method for Forming Therefor - Embodiments described herein relate to semiconductor transistors having trench contacts, in particular to semiconductor transistors having a field electrode below a gate electrode, and to related methods for producing semiconductor transistors having trench contacts. | 07-18-2013 |
20130193510 | SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD FOR MANUFACTURING - A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the semiconductor body by an insulation layer, wherein the trench has a top trench portion which extends from the semiconductor surface at least to a depth which is greater than a depth of the first semiconductor area, wherein the trench further has a bottom trench portion extending subsequent to the top trench portion at least up to the second semiconductor area, and wherein the top trench portion has a first lateral dimension and the bottom trench portion has a second lateral dimension which is greater than the first lateral dimension. | 08-01-2013 |
20140167209 | Method of Manufacturing a Semiconductor Device and a Semiconductor Workpiece - A semiconductor device is manufactured in a semiconductor substrate comprising a first main surface, the semiconductor substrate including chip areas. The method of manufacturing the semiconductor substrate comprises forming components of the semiconductor device in the first main surface in the chip areas, removing substrate material from a second main surface of the semiconductor substrate, the second main surface being opposite to the first main surface, forming a separation trench into a first main surface of the semiconductor substrate, the separation trench being disposed between adjacent chip areas. The method further comprises forming at least one sacrificial material in the separation trench, and removing the at least one sacrificial material from the trench. | 06-19-2014 |
Patent application number | Description | Published |
20090108476 | Humidifier - A humidifier including a housing which is used to receive a humidifier module. The housing can be connected by the housing cover and is provided with at least one first sealing element, which seals the humidifier module in relation to the housing. The humidifier module is arranged in an axially displaceable manner on the first sealing element. | 04-30-2009 |
20090121366 | Humidifier - A humidifier ( | 05-14-2009 |
20090200229 | Lattice Structure, Use of the Lattice Structure and Vessel With Lattice Structure - A lattice structure for the passage of a first medium against a second medium with transverse webs and longitudinal webs, lattice openings with a clear width of ≦300 μm being arranged between the transverse webs and the longitudinal webs. On at least one side of the lattice structure, the transverse webs and/or the longitudinal webs have a rib arrangement of ribs projecting vertically to the lattice plane, at least one first group and a second group of ribs being arranged which differ from one another at least by their heights H | 08-13-2009 |
20110165478 | Humidifier Device for Humidifying a Fluid in a Fuel Cell System - A humidifier device for humidifying a fluid in a fuel cell system of a motor vehicle is provided. The humidifier device has a housing, in which is arranged at least one membrane, and a bypass channel for bypassing the at least one membrane. The bypass channel has a non-circular cross-section. | 07-07-2011 |
20110195325 | HUMIDIFIER MODULE FOR A FUEL CELL SYSTEM - The present invention relates to a humidifier module ( | 08-11-2011 |