Patent application number | Description | Published |
20120181691 | PACKAGE STRUCTURE, PACKAGING SUBSTRATE AND CHIP - The present invention relates to a package structure, a packaging substrate and a chip. The package structure includes: a chip including a plurality of electrode pads on a surface thereof; a packaging substrate including a plurality of first conductive pads on a surface thereof; and a plurality of connecting units through which the electrode pads electrically communicate with the first conductive pads, in which the chip or the packaging substrate further includes a first surface finish layer over the electrode pads or the first conductive pads, and the first surface finish layer includes a Ni—Pd alloy layer. Accordingly, the surface finish method applied in a package structure, a packaging substrate and a chip has advantages of simple manufacture, low cost and high reliability. | 07-19-2012 |
20120308880 | POROUS LI4TI5O12 ANODE MATERIAL, METHOD OF MANUFACTURING THE SAME AND BATTERY COMPRISING THE SAME - The present invention relates to a porous lithium titanium oxide anode material, a method of manufacturing the same, and a battery comprising the same. The method of manufacturing a porous lithium titanium oxide anode material of the present invention includes the following steps: (A) mixing a lithium salt and an organic acid, and adding a titanium salt immediately; (B) performing a first heat treatment at 300-800° C. for three hours; and (C) performing a second heat treatment at 600-800° C. for ten hours to obtain a porous lithium titanium oxide anode material. The cost of manufacturing the porous lithium titanium oxide anode material can be reduced through the aforementioned method, and a lithium battery having excellent electrochemical properties and cycling stabilities can be produced by the present invention. | 12-06-2012 |
Patent application number | Description | Published |
20080296148 | Method for fabricating concentration-gradient high-frequency ferromagnetic films - The present invention discloses a method for fabricating concentration-gradient high-frequency ferromagnetic film, wherein the primary material target is arranged exactly below the sputter-coated substrate to achieve the on-substrate concentration uniformity of the components coming from the primary material target; at least one doping target is arranged at a position deviating from the center of the substrate to create a doping concentration gradient on the substrate along a direction, and a stress gradient is thus created on the substrate along the direction of concentration variation. Thus, the as-deposited ferromagnetic material fabricated at ambient temperature can possess the uniaxial anisotropy that a high-frequency ferromagnetic material needs. | 12-04-2008 |
20100244266 | METALLIC BONDING STRUCTURE FOR COPPER AND SOLDER - The present invention discloses a metallic bonding structure for copper and solder, which applies to connect at least one electronic element. The metallic bonding structure comprises at least one copper-based member and at least one zinc bonding member. The copper-based members are arranged on the electronic element through at least one solder member. The zinc bonding members are arranged between the copper-based members and the solder members. The solder members are tin-based solder bumps. | 09-30-2010 |
20100277880 | ELECTRONIC PACKAGE STRUCTURE - The present invention discloses an electronic package structure, which comprises an electronic element, a plurality of SMA (Shape Memory Alloy) connection portions, and a plurality of solder connection members. One side of the SMA connection portion is joined to the electronic element, and the solder connection member is arranged over the other side of the SMA connection portion. The SMA connection portions can comply with the strains caused by thermal stresses during the operation of the electronic product and can restore the original shape after the thermal stresses disappear. Therefore, the preset invention can prevent the junctions between the SMA connection portions and the electronic element/the solder connection members from the crack or disconnection caused by thermal stresses. | 11-04-2010 |
20110109415 | INDUCTOR STRUCTURE - The present invention discloses an improved inductor structure, which applies to the semiconductor field, particularly to a system-on-chip, and which comprises a substrate, a first conductive patterned film, and a first insulating layer formed between the substrate and the first conductive patterned film. The substrate has a base and an accommodation portion formed in the base. A magnetic material is filled into the accommodation portion to form a magnetic region. The accommodation portion is fabricated via etching the base or drilling a through-hole in the base. A plurality of conductive wires is arranged in a spiral way to form the first conductive patterned film. A protective layer covers the surface of the first conductive patterned film and isolates the contact of the first conductive patterned film and moisture. | 05-12-2011 |
20110175698 | INDUCTOR WITH FERROMAGNETIC METAL FILM - The present invention discloses an inductor with a ferromagnetic metal film, which comprises an upper magnetic material layer, a lower magnetic material layer, and a metallic conducting wire. The metallic conducting wire is sandwiched between the upper magnetic material layer and the lower magnetic material layer. Either the upper magnetic material layer or the lower magnetic material layer is a ferromagnetic metal film. The ferromagnetic metal film can effectively converge the magnetic fluxes and enhance the inductance of the inductor. Thus is reduced the thickness of the upper magnetic material layer or lower magnetic material layer and achieved a thin drum inductor. | 07-21-2011 |
20110281136 | COPPER-MANGANESE BONDING STRUCTURE FOR ELECTRONIC PACKAGES - A copper-manganese bonding structure adopted for use on Under Bump Metallurgy (UBM) at solder joints in packaging technology includes an electronic element, at least one soldering material and at least one manganese bonding material. The electronic element has at least one copper conductive portion. The soldering material corresponds to the copper conductive portion. The manganese bonding material is arranged in the copper conductive portion and the soldering material to form bonding between them. The manganese bonding material can reduce the generation of a brittle intermetallic compound Cu | 11-17-2011 |
Patent application number | Description | Published |
20110077894 | Process parameter assessment method for the solid target for gallium (Ga)-68/germanium (Ge)-68 generator - A process parameter assessment method for the solid target for gallium (Ga)-68/germanium (Ge)-68 generator mainly consists of the procedures: first calculate the thickness d for the electroplated gallium (Ga)-69 on the solid target; and then through a graph of decay curves comprising 69Ga(p, 2n) 68Ge target thickness and incident energy with 5 different incident energy doses (30, 26, 25, 24, 23 MeV), based on electroplating thickness d, derive the corresponding irradiation energy dose Yi for each group after decay; and through the graph comprising 69Ga(p, 2n) 68Ge incident energy and reaction cross-sectional area (containing corrected function graph of incident energy for germanium-68, gallium-68, or zinc-65 and reaction cross-sectional area), based on the defined range by irradiation energy dose Xi and the corresponding irradiation energy dose Yi, derive the nuclear reaction cross-sectional area for each group for germanium (Ge)-68, gallium (Ga)-68, zinc (Zn)-65 and figure out the mean reaction area (MRA) from the reaction cross-sectional area of each group; and select the maximum germanium (Ge)-68 MRA value and the minimum gallium (Ga)-68 and zinc (Zn)-65 MRA values; and generate the required default irradiation energy for the MRA of each group as the optimal reaction energy. | 03-31-2011 |
20120259102 | 18F-Labeled Monomeric Galactose Derivative Used as Tomography Probe | 10-11-2012 |
20130072672 | Method for F-18 FLT Synthesis - The present invention establishes a fast and simple [F-18] FLT synthesis process. Solid extraction units are used for purification to achieve an equally high and constant radiochemical yield and purity in a short period of time. By using a separation method, the impurities are reduced successfully while the total synthesis time is shortened. The radiochemical purity and the corrected radiochemical yield are both high. | 03-21-2013 |