Patent application number | Description | Published |
20150214221 | INTEGRATED CIRCUIT DEVICE AND RELATED MANUFACTURING METHOD - An integrated circuit device may include the following elements: a first semiconductor substrate; a first transistor set positioned in the first semiconductor substrate; a first dielectric layer covering a gate electrode of the first transistor set; a first interconnect member positioned in the first dielectric layer and electrically connected to the first transistor set; a second semiconductor substrate; a second transistor set positioned in the second semiconductor substrate and structurally different from the first transistor set; a second dielectric layer connected to the first dielectric layer, positioned between the first dielectric layer and the second semiconductor substrate, and covering a gate electrode of the second transistor set; and a second interconnect member positioned in the second dielectric layer, electrically connected to a terminal of the second transistor set, and electrically connected to the first interconnect member. | 07-30-2015 |
20150214236 | SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE - A semiconductor device includes a substrate, a first transistor, and a second transistor. The first transistor includes a first source terminal formed of a material and connected to a first source, a first drain terminal formed of the material and connected to a first drain, a first gate overlapping a portion of the substrate that is between the first source and the first drain, and a first dielectric layer between the first gate and the substrate. The second transistor includes a control gate formed of the material and overlapping a part of the substrate that is positioned between a second source and a second drain, a second dielectric layer between the control gate and the substrate, a floating gate extending through the second dielectric layer to contact a doped region in the substrate, and an insulating member positioned between the control gate and the floating gate. | 07-30-2015 |
20150214296 | INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF - An integrated circuit includes a semiconductor substrate, and at least two transistors connected in series on the semiconductor substrate, wherein each transistor shares a source electrode or a drain electrode with an adjacent transistor. The integrated circuit also includes a hermetic cavity disposed on the source electrode and the drain electrode, between gate electrodes of adjacent transistors. The source electrode disposed at a first end portion of the series of transistors is in direct contact with a source interconnect, and the drain electrode disposed at a second end portion of the series of transistors is in direct contact with a drain interconnect. | 07-30-2015 |