Patent application number | Description | Published |
20080263262 | COMMAND INTERFACE FOR MEMORY DEVICES - A method for operating a memory device that includes a plurality of analog memory cells includes accepting at an input of the memory device a self-contained command to perform a memory access operation on at least one of the memory cells. The command includes an instruction specifying the memory access operation and one or more parameters that are indicative of analog settings to be applied to the at least one of the memory cells when performing the memory access operation. | 10-23-2008 |
20080282106 | DATA STORAGE WITH INCREMENTAL REDUNDANCY - A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy. | 11-13-2008 |
20090024905 | COMBINED DISTORTION ESTIMATION AND ERROR CORRECTION CODING FOR MEMORY DEVICES - A method for operating a memory device ( | 01-22-2009 |
20090043951 | PROGRAMMING SCHEMES FOR MULTI-LEVEL ANALOG MEMORY CELLS - A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits. | 02-12-2009 |
20090157964 | EFFICIENT DATA STORAGE IN MULTI-PLANE MEMORY DEVICES - A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays. | 06-18-2009 |
20090168524 | WEAR LEVEL ESTIMATION IN ANALOG MEMORY CELLS - A method for operating a memory includes applying at least one pulse to a group of analog memory cells, so as to cause the memory cells in the group to assume respective storage values. After applying the pulse, the respective storage values are read from the memory cells in the group. One or more statistical properties of the read storage values are computed. A wear level of the group of the memory cells is estimated responsively to the statistical properties. | 07-02-2009 |
20090240872 | MEMORY DEVICE WITH MULTIPLE-ACCURACY READ COMMANDS - A method for data storage includes defining at least first and second read commands for reading storage values from analog memory cells. The first read command reads the storage values at a first accuracy, and the second read command reads the storage values at a second accuracy, which is finer than the first accuracy. A condition is evaluated with respect to a read operation that is to be performed over a given group of the memory cells. One of the first and second read commands is selected responsively to the evaluated condition. The storage values are read from the given group of the memory cells using the selected read command. | 09-24-2009 |
20100091535 | ADAPTIVE ESTIMATION OF MEMORY CELL READ THRESHOLDS - A method for operating a memory ( | 04-15-2010 |
20100115376 | AUTOMATIC DEFECT MANAGEMENT IN MEMORY DEVICES - A method for storing data in a memory ( | 05-06-2010 |
20100124088 | STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N - A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set. | 05-20-2010 |
20100131826 | ESTIMATION OF NON-LINEAR DISTORTION IN MEMORY DEVICES - A method for operating a memory ( | 05-27-2010 |
20100131827 | MEMORY DEVICE WITH INTERNAL SIGNAP PROCESSING UNIT - A method for operating a memory ( | 05-27-2010 |
20100157641 | MEMORY DEVICE WITH ADAPTIVE CAPACITY - A method for data storage in a memory ( | 06-24-2010 |
20100165689 | REJUVENATION OF ANALOG MEMORY CELLS - A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells. | 07-01-2010 |
20100165730 | READING MEMORY CELLS USING MULTIPLE THRESHOLDS - A method for operating a memory ( | 07-01-2010 |
20100199150 | Data Storage In Analog Memory Cell Arrays Having Erase Failures - A method for data storage includes performing an erasure operation on a group of analog memory cells ( | 08-05-2010 |
20100220509 | Selective Activation of Programming Schemes in Analog Memory Cell Arrays - A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme. | 09-02-2010 |
20100250836 | Use of Host System Resources by Memory Controller - A method for data storage includes, in a system that includes a host having a host memory and a memory controller that is separate from the host and stores data for the host in a non-volatile memory including multiple analog memory cells, storing in the host memory information items relating to respective groups of the analog memory cells of the non-volatile memory. A command that causes the memory controller to access a given group of the analog memory cells is received from the host. In response to the command, a respective information item relating to the given group of the analog memory cells is retrieved from the host memory by the memory controller, and the given group of the analog memory cells is accessed using the retrieved information item. | 09-30-2010 |
20110225472 | READING MEMORY CELLS USING MULTIPLE THRESHOLDS - A method for operating a memory ( | 09-15-2011 |
20120044762 | REJUVENATION OF ANALOG MEMORY CELLS - A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells. | 02-23-2012 |
20120201078 | Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N - A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set. | 08-09-2012 |
20120297270 | Programming Schemes for Multi-Level Analog Memory Cells - A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits. | 11-22-2012 |
20130007566 | Memory Device with Adaptive Capacity - A method for data storage in a memory that includes a plurality of analog memory cells includes estimating respective achievable storage capacities of the analog memory cells. The memory cells are assigned respective storage configurations defining quantities of data to be stored in the memory cells based on the estimated achievable capacities. The data is stored in the memory cells in accordance with the respective assigned storage configurations. The achievable storage capacities of the analog memory cells are re-estimated after the memory has been installed in a host system and used for storing the data in the host system. The storage configurations are modified responsively to the re-estimated achievable capacities. | 01-03-2013 |
20130121080 | Adaptive Estimation of Memory Cell Read Thresholds - A method for operating a memory ( | 05-16-2013 |
20130227231 | MEMORY DEVICE WITH INTERNAL SIGNAL PROCESSING UNIT - A method for operating a memory includes storing data in a plurality of analog memory cells that are fabricated on a first semiconductor die by writing input storage values to a group of the analog memory cells. After storing the data, multiple output storage values are read from each of the analog memory cells in the group using respective, different threshold sets of read thresholds, thus providing multiple output sets of the output storage values corresponding respectively to the threshold sets. The multiple output sets of the output storage values are preprocessed by circuitry that is fabricated on the first semiconductor die, to produce preprocessed data. The preprocessed data is provided to a memory controller, which is fabricated on a second semiconductor die that is different from the first semiconductor die. so as to enable the memory controller to reconstruct the data responsively to the preprocessed data. | 08-29-2013 |
20130254470 | EFFICIENT DATA STORAGE IN MULTI-PLANE MEMORY DEVICES - A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays. | 09-26-2013 |
20140029338 | STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N - A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set. | 01-30-2014 |
20140157090 | Programming Schemes for Multi-Level Analog Memory Cells - A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits. | 06-05-2014 |
20140201433 | SELECTIVE ACTIVATION OF PROGRAMMING SCHEMES IN ANALOG MEMORY CELL ARRAYS - A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme. | 07-17-2014 |
20140237322 | STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N - A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set. | 08-21-2014 |
20140298139 | MEMORY DEVICE WITH INTERNAL SIGNAL PROCESSING UNIT - A method for operating a memory includes storing data in a plurality of analog memory cells that are fabricated on a first semiconductor die by writing input storage values to a group of the analog memory cells. After storing the data, multiple output storage values are read from each of the analog memory cells in the group using respective, different threshold sets of read thresholds, thus providing multiple output sets of the output storage values corresponding respectively to the threshold sets. The multiple output sets of the output storage values are preprocessed by circuitry that is fabricated on the first semiconductor die, to produce preprocessed data. The preprocessed data is provided to a memory controller, which is fabricated on a second semiconductor die that is different from the first semiconductor die. so as to enable the memory controller to reconstruct the data responsively to the preprocessed data. | 10-02-2014 |
20140344498 | Use of Host System Resources by Memory Controller - A method for data storage includes, in a system that includes a host having a host memory and a memory controller that is separate from the host and stores data for the host in a non-volatile memory including multiple analog memory cells, storing in the host memory information items relating to respective groups of the analog memory cells of the non-volatile memory. A command that causes the memory controller to access a given group of the analog memory cells is received from the host. In response to the command, a respective information item relating to the given group of the analog memory cells is retrieved from the host memory by the memory controller, and the given group of the analog memory cells is accessed using the retrieved information item. | 11-20-2014 |
20150030163 | NON-INTRUSIVE QUALITY MEASUREMENTS FOR USE IN ENHANCING AUDIO QUALITY - Methods and systems are provided for receiving by a first electronic device audio content, determining audio quality of the received audio content, which includes measuring and/or estimating quality related parameters associated with the received audio content, and communicating the quality related parameters to a second electronic device, from which the audio content was transmitted. The quality related parameters may be used to control audio related functions in the second electronic device. The audio related functions may comprise noise reduction, noise suppression, cancellation, distortion reduction, equalization, compression, enhancement and/or audio rate conversion. Determining the audio quality of the received audio content may be based on one or more noise related thresholds. The quality related parameters may be communicated to the second electronic device over a dedicated control channel setup between the devices. | 01-29-2015 |
20150055388 | SELECTIVE ACTIVATION OF PROGRAMMING SCHEMES IN ANALOG MEMORY CELL ARRAYS - A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme. | 02-26-2015 |
20150081973 | HIERARCHICAL DATA STORAGE SYSTEM - A data storage system includes a plurality of non-volatile memory devices arranged in one or more sets, a main controller and one or more processors. The main controller is configured to accept commands from a host and to convert the commands into recipes. Each recipe includes a list of multiple memory operations to be performed sequentially in the non-volatile memory devices belonging to one of the sets. Each of the processors is associated with a respective set of the non-volatile memory devices, and is configured to receive one or more of the recipes from the main controller and to execute the memory operations specified in the received recipes in the non-volatile memory devices belonging to the respective set. | 03-19-2015 |