Patent application number | Description | Published |
20080317968 | TILTED PLASMA DOPING - A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence. | 12-25-2008 |
20090124064 | PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS - Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase. | 05-14-2009 |
20090124065 | PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS - Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase. | 05-14-2009 |
20090124066 | PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS - Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase. | 05-14-2009 |
20090309041 | TECHNIQUES FOR PROVIDING A MULTIMODE ION SOURCE - Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode. | 12-17-2009 |
20090314962 | METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER - An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam. | 12-24-2009 |
20110000896 | SYSTEM AND METHOD FOR SELECTIVELY CONTROLLING ION COMPOSITION OF ION SOURCES - A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma. | 01-06-2011 |
20120000606 | PLASMA UNIFORMITY SYSTEM AND METHOD - A plasma processing tool comprises a plasma chamber configured to generate a plasma from a gas introduced into the chamber where the generated plasma has an electron plasma frequency. A plurality of electrodes disposed within the chamber. Each of the electrodes configured to create a rapidly-rising-electric-field pulse in a portion of the plasma contained in the chamber. Each of said rapidly-rising-electric-field pulses having a rise time substantially equal to or less than the inverse of the electron plasma frequency and a duration of less than the inverse of the ion plasma frequency. In this manner, the electron energy distribution in the generated plasma may be spatially and locally modified thereby affecting the density, composition and temperature of the species in the plasma and consequently the uniformity of the density and composition of ions and neutrals directed at a target substrate. | 01-05-2012 |
20130082599 | TRANSFORMER-COUPLED RF SOURCE FOR PLASMA PROCESSING TOOL - A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system. | 04-04-2013 |
20130141818 | MAGNETIC STORAGE DEVICE - A write head for a magnetic storage device includes a writing tip comprising a magnetic material, a write pulse generator configured to generate a write pulse signal comprising a varying voltage bias between the magnetic storage device and the writing tip. The write pulse signal comprising one or more write pulses effective to tunnel electrons from the writing tip to the magnetic storage device. The data stream generator configured to provide a data stream signal to the writing tip where the data stream signal is operative to vary spin polarity in the electrons from a first polarity to a second polarity. | 06-06-2013 |
20140272180 | Apparatus and Method for Improved Perpendicular Recording Medium Using Ion Implantation in a Magnetic Field - In one embodiment, a system for treating a magnetic layer includes an ion source to generate an ion beam containing ions of a desired species. The system may also include a magnetic alignment apparatus downstream of the ion source and proximate to the substrate, wherein the magnetic alignment apparatus is operable to apply a magnetic field to the magnetic layer in the substrate along a direction out of plane relative to the magnetic layer. | 09-18-2014 |
20140272181 | APPARATUS AND METHOD FOR ION IMPLANTATION IN A MAGNETIC FIELD - In one embodiment, a system for treating a magnetic layer includes an ion generating apparatus for directing an ion beam to the substrate and a magnetic alignment apparatus downstream of the ion generating apparatus and proximate to the substrate and operative to generate a magnetic field that intercepts the substrate in an out of plane orientation with respect to a plane of the substrate. The magnetic alignment apparatus and ion generating apparatus generate a process region in which the ion beam and magnetic field overlap. | 09-18-2014 |
Patent application number | Description | Published |
20140378712 | ALKANOLYSIS PROCESS - The present invention provides an improved process for converting a diester of polyether polyol, e.g., PTMEA, to the corresponding dihydroxy product, e.g., polytetramethylene ether glycol (PTMEG) continuously in a reaction zone, such as, for example, a reactive distillation system, for achieving virtually complete conversion of PTMEA to PTMEG, and recovery of PTMEG free of unreacted or unconverted PTMEA and alkanol ester by-product. | 12-25-2014 |
20150158976 | ALKANOLYSIS PROCESS AND METHOD FOR SEPARATING CATALYST FROM PRODUCT MIXTURE - The present invention provides an improved process and apparatus for alkanolysis of polytetramethylene ether diacetate to polytetraalkylene ether glycol in the presence of a C1 to C4 alkanol and an alkali or alkaline earth metal catalyst wherein the catalyst component of the product mixture comprising polytetraalkylene ether glycol, alkanol and catalyst, essentially free of the alkanol acetate by-product, e.g., methyl acetate is removed by contacting the mixture in the absence of added water with certain ion exchange resin at specified contact conditions. The invention further provides a highly efficient method for removing the catalyst component of a mixture comprising polytetraalkylene ether glycol, alkanol and alkali or alkaline earth metal catalyst by contacting the mixture in the absence of added water with certain ion exchange resin at specified contact conditions, | 06-11-2015 |
Patent application number | Description | Published |
20110027225 | MN/CA IX and EGFR Pathway Inhibition - The invention is based upon the discovery that the EGFR pathway can stimulate a previously unknown tumorigenic function of CA IX, via phosphorylation of the sole tyrosine residue present in CA IX's intracellular domain. EGFR-phosphorylated CA IX then interacts with the p85 subunit of PI3K to activate Akt, which in turn is associated with anti-apototic function and increased cell survival. The latter finding indicates that there is a positive feedback loop for CA9 expression mediated by the PI3K pathway in preneoplastic/neoplastic diseases. Disclosed herein are novel therapeutic methods for treating preneoplastic/neoplastic diseases associated with abnormal MN/CA IX expression, using EGFR pathway inhibitors. Preferably, the EGFR pathway inhibitors are tyrosine kinase inhibitors or EGFR-specific antibodies. Further disclosed are methods for patient therapy selection for EGFR pathway inhibitors, preferably in combination with other cancer therapies, based on detection of abnormal MN/CA9 gene expression in preneoplastic/neoplastic tissues. | 02-03-2011 |
20130209394 | MN/CA IX AND EGFR PATHWAY INHIBITION - The invention is based upon the discovery that the EGFR pathway can stimulate a previously unknown tumorigenic function of CA IX, via phosphorylation of the sole tyrosine residue present in CA IX's intracellular domain. EGFR-phosphorylated CA IX then interacts with the p85 subunit of PI3K to activate Akt, which in turn is associated with anti-apototic function and increased cell survival. The latter finding indicates that there is a positive feedback loop for CA9 expression mediated by the PI3K pathway in preneoplastic/neoplastic diseases. Disclosed herein are novel therapeutic methods for treating preneoplastic/neoplastic diseases associated with abnormal MN/CA IX expression, using EGFR pathway inhibitors. Preferably, the EGFR pathway inhibitors are tyrosine kinase inhibitors or EGFR-specific antibodies. Further disclosed are methods for patient therapy selection for EGFR pathway inhibitors, preferably in combination with other cancer therapies, based on detection of abnormal MN/CA9 gene expression in preneoplastic/neoplastic tissues. | 08-15-2013 |