Patent application number | Description | Published |
20140057189 | FUEL CELL STARTUP APPARATUS AND METHOD - Disclosed is a fuel cell startup apparatus and method, particularly, a fuel cell startup method, by which in an emergency situation such as when a high-voltage battery mounted on a fuel cell vehicle is completely discharged, fuel cell startup can be achieved without assistance of a high-voltage power source. To this end, an air supply port, which is connected to an emergency air supplier, is formed on an air supply line configured to supply air to a cathode of a fuel cell stack, and the emergency air supplier supplies the air to the fuel cell stack when complete discharge of a high-voltage battery and is removably engaged to the air supply port. | 02-27-2014 |
20140287334 | FUEL CELL SYSTEM AND THE OPERATING METHOD THEREOF - A fuel cell system includes an air manifold through which air is supplied or exhausted, a fuel gas manifold through which fuel gas is supplied or exhausted, a stack portion that generates electricity by using air and fuel that are supplied by the air manifold and the fuel gas manifold, and an injection array that is disposed along an inside of the air manifold or the fuel gas manifold to inject air or fuel gas. | 09-25-2014 |
20140377673 | FUEL CELL - A fuel cell including a stack in which a plurality of cells are stacked includes an air manifold and a hydrogen manifold on a first side and a second side of the stack, respectively, a jet array including a tubular body inserted in the air manifold or the hydrogen manifold and a plurality of orifices formed in the tubular body and arranged in a longitudinal direction of the tubular body, a pump or a valve for supplying air or hydrogen to the jet array; and a controller that operates the pump or the valve. | 12-25-2014 |
20150064582 | FUEL CELL STARTUP APPARATUS AND METHOD - A fuel cell startup apparatus and method reduces high-voltage generation and corrosion of a cathode electrode that may occur because the density of oxygen is locally high in a cell near a central flow distributor after long-term parking of a fuel-cell vehicle. To this end, density control gas is selectably injected into a fuel supply line prior to supply of reaction gas of hydrogen and air in a fuel cell startup process after long-term parking to forcedly mix anode-side gas in the fuel supply line and the cell with the density control gas. | 03-05-2015 |
20150086889 | METHOD FOR RECOVERING PERFORMANCE OF FUEL-CELL STACK - A method for recovering performance of a fuel-cell stack is provided. When hydrogen used as fuel of the fuel-cell stack is contaminated, air is supplied to an anode instead of hydrogen to remove impurities and recover the performance of the fuel-cell stack. The method includes supplying air to an anode of the fuel-cell stack in an operation stop state of the fuel-cell stack to decrease a stack voltage. | 03-26-2015 |
Patent application number | Description | Published |
20080241391 | METHOD OF MANUFACTURING A METAL NANOPARTICLE, CONDUCTIVE INK COMPOSITION HAVING THE METAL NANOPARTICLE AND METHOD OF FORMING A CONDUCTIVE PATTERN USING THE SAME - A method of manufacturing a metal nanoparticle includes coupling a metal ion to an organic ligand having a weight-average molecular weight of about 10,000 to about 1,500,000. The method further includes reducing the metal ion coupled to the organic ligand to form a metal nanoparticle having a skin layer. | 10-02-2008 |
20080241414 | CONDUCTIVE INK COMPOSITION AND METHOD OF FORMING A CONDUCTIVE PATTERN USING THE SAME - A conductive ink composition includes about 15% to about 50% by weight of copper nanoparticles, about 40% to about 80% by weight of a non-aqueous solvent mixture, about 0.01% to about 5% by weight of a dispersion agent and about 1% to about 20% by weight of a wetting agent. A conductive pattern may be formed with use of the conductive ink composition and an inkjet printer. | 10-02-2008 |
20090125175 | Apparatus and method for generating three-dimensional map using structured light - A three-dimensional map-generating apparatus and method using structured light. The apparatus for generating a three-dimensional map using structured light includes an odometer detecting the pose of a mobile robot, and a distance-measuring sensor including a light source module that emits light upward and a camera module that captures an image formed by light reflected from an obstacle, and measuring a distance to the obstacle using the captured image. The apparatus measures a distance to the obstacle using the distance-measuring sensor while changing the relative pose of the mobile robot, thereby generating a three-dimensional map. | 05-14-2009 |
20090149994 | Method, medium, and apparatus for correcting pose of moving robot - A method, apparatus, and medium for correcting a pose of a moving robot are provided. The method includes sensing an entrance using a distance-sensing sensor mounted on the moving robot, storing first distance data of the sensed entrance, after the moving robot travels, newly sensing the entrance using the distance-sensing sensor, and correcting the pose of the moving robot using the first distance data and second distance data corresponding to the entrance newly sensed after the moving robot travels. | 06-11-2009 |
20100262290 | Data matching apparatus, data matching method and mobile robot - A three-dimensional data matching system is disclosed. Data matching is performed by merging distance information and image information. Therefore, matching accuracy is improved even if a sensor with relatively low sensitivity is used. Matching data generated as a result of matching range data and CAD data is projected onto an image captured by a camera, an effective edge is extracted from the image, and an error of the matching data is corrected based on the effective edge, thereby improving matching accuracy. | 10-14-2010 |
20120223300 | THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel and a manufacturing method capable of forming an insulating layer made of different materials for a portion contacting an oxide semiconductor and a second portion without an additional process. The thin film transistor array panel includes: a gate electrode; a source electrode and a drain electrode spaced apart from each other, each of the source and drain electrodes comprising a lower layer and an upper layer; an insulating layer disposed between the gate electrode and the source and drain electrodes; a semiconductor, the source electrode and the drain electrode being electrically connected to the semiconductor; a first passivation layer contacting the lower layer of the source and drain electrodes but not contacting the upper layer of the source and drain electrodes; and a second passivation layer disposed on the upper layer of the source and drain electrodes. The first passivation layer may be made of silicon oxide, and the second passivation may be made of silicon nitride. | 09-06-2012 |
20130032793 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - Provided is a thin film transistor array panel. The thin film transistor array panel according to exemplary embodiments of the present invention includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy. | 02-07-2013 |
20130200404 | THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor display panel includes: a gate electrode, a source electrode and a drain electrode which are included in a thin film transistor on a substrate; a data line connected to the source electrode; a pixel link member connecting the drain electrode to a pixel electrode; and a gate pad connected to the gate electrode through a gate line and including a first gate subpad, a second gate subpad and a gate pad link member, in which the pixel link member and the gate pad link member are substantially same in thickness. | 08-08-2013 |
20130256652 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned. | 10-03-2013 |
20140118656 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - A liquid crystal display includes a transparent insulation substrate, a first polarizer, and a semiconductor layer, a thin film transistor, and a backlight unit. The first polarizer is disposed on the transparent insulation substrate. The first polarizer includes a light blocking film and metal wires. The semiconductor layer, disposed on the light blocking film, has a perimeter aligned with a perimeter of the light blocking film. The thin film transistor, disposed on the semiconductor layer, includes a source region and a drain region disposed in the semiconductor layer. The backlight unit, disposed under the transparent insulation substrate, provides light to the transparent insulation substrate. The blocking film reflects substantially all of the light. Gaps are disposed between the metal wires. | 05-01-2014 |
20140138684 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned. | 05-22-2014 |
20140145177 | THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR SUBSTRATE - A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting the data line, a drain electrode spaced from the source electrode, a channel disposed between the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a gate insulation pattern disposed on the channel, and a gate electrode disposed on the gate insulation pattern. | 05-29-2014 |
20140151683 | THIN FILM TRANSISTOR - A thin film transistor includes an oxide semiconductor, in which an oxygen defect content of the oxide semiconductor is no greater than about 0.15 based on an entire oxygen content included in the oxide semiconductor. | 06-05-2014 |
20140167040 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode. | 06-19-2014 |
20140175429 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel may include a channel layer including an oxide semiconductor and formed in a semiconductor layer, a source electrode formed in the semiconductor layer and connected to the channel layer at a first side, a drain electrode formed in the semiconductor layer and connected to the channel layer at an opposing second side, a pixel electrode formed in the semiconductor layer in a same portion of the semiconductor layer as the drain electrode, an insulating layer disposed on the channel layer, a gate line including a gate electrode disposed on the insulating layer, a passivation layer disposed on the source and drain electrodes, the pixel electrode, and the gate line, and a data line disposed on the passivation layer. A width of the channel layer may be substantially equal to a width of the pixel electrode in a direction parallel to the gate line. | 06-26-2014 |
20150021602 | THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel and a manufacturing method capable of forming an insulating layer made of different materials for a portion contacting an oxide semiconductor and a second portion without an additional process. Source and drain electrodes of the thin film transistor each include a lower layer and an upper layer. A first passivation layer contacts the lower layer of the source and drain electrodes but does not contact the upper layer of the source and drain electrodes, and a second passivation layer is disposed on the upper layer of the source and drain electrodes. The first passivation layer may be made of silicon oxide, and the second passivation may be made of silicon nitride. | 01-22-2015 |
20150060843 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - A display substrate and a method for manufacturing a display substrate are disclosed. In the method, a gate electrode is formed on a base substrate. An active pattern is formed using an oxide semiconductor. The active pattern partially overlaps the gate electrode. A first insulation layer pattern and a second insulation layer pattern are sequentially formed on the active pattern. The first insulation layer pattern and the second insulation layer pattern overlap the gate electrode. A third insulation layer is formed to cover the active pattern, the first insulation layer pattern and the second insulation layer pattern. Either the first insulation layer pattern or the second insulation layer pattern includes aluminum oxide. Forming the first insulation layer pattern and the second insulation layer pattern includes performing a backside exposure process using the gate electrode as an exposure mask. | 03-05-2015 |
20150108481 | THIN FILM TRANSISTOR, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME - A thin film transistor includes a bottom gate electrode, a top gate electrode and an active pattern. The top gate electrode includes a transparent conductive material and overlaps with the bottom gate electrode. A boundary of the bottom gate electrode and a boundary of the top gate electrode are coincident with each other in a cross-sectional view. The active pattern includes a source portion, a drain portion and a channel portion disposed between the source portion and the drain portion. The channel portion overlaps with the bottom gate electrode and the top gate electrode. | 04-23-2015 |