Patent application number | Description | Published |
20100300123 | HYBRID DESICCANT DEHUMIDIFYING APPARATUS AND CONTROL METHOD THEREOF - Disclosed are a hybrid desiccant dehumidifying apparatus and a control method thereof which are employed under poor environment, such as a ship painting field. External air cooled by an evaporator is dehumidified and heated while passing through a desiccant dehumidifier and external air heated by condensation heat of a condenser is supplied to the desiccant dehumidifier as a regeneration air source such that high-temperature and high-humidity regeneration. A cooler is integrally formed with the desiccant dehumidifier so that the hybrid desiccant dehumidifying apparatus is manufactured in a compact size and the operating cost thereof is significantly reduced. | 12-02-2010 |
20110201166 | METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES - A method of manufacturing a semiconductor device includes forming a gate electrode on a semiconductor substrate and a sidewall spacer on the gate electrode. Then, a portion of the semiconductor substrate at both sides of the sidewall spacer is partially etched to form a trench. A SiGe mixed crystal layer is formed in the trench. A silicon layer is formed on the SiGe mixed crystal layer. A portion of the silicon layer is partially etched using an etching solution having different etching rates in accordance with a crystal direction of a face of the silicon layer to form a capping layer including a silicon facet having an (111) inclined face. | 08-18-2011 |
20110230027 | Methods of Forming Semiconductor Devices Having Faceted Semiconductor Patterns - Provided are methods of forming semiconductor devices. A method may include preparing a semiconductor substrate including a first region and a second region adjacent the first region. The method may also include forming sacrificial pattern covering the second region and exposing the first region. The method may further include forming a capping layer including a faceted sidewall on the first region using selective epitaxial growth (SEG). The faceted sidewall may be separate from the sacrificial pattern. The sacrificial pattern may be removed. Impurity ions may be implanted into the semiconductor substrate. | 09-22-2011 |
20110241071 | Semiconductor Devices Having Field Effect Transistors With Epitaxial Patterns in Recessed Regions - A semiconductor device includes a device isolation pattern, a gate line, and an epitaxial pattern. The device isolation pattern is disposed in a semiconductor substrate to define an active area. The gate line intersects the active area. The epitaxial pattern fills a recess region in the active area at one side of the gate line and includes a different constituent semiconductor element than the semiconductor substrate. The recess region includes a first inner sidewall that is adjacent to the device isolation pattern and extends in the lengthwise direction of the gate, and a second inner sidewall that extends in the direction perpendicular to the lengthwise direction of the gate line. The active area forms the first inner sidewall of the recess, while the device isolation layer forms at least a portion of the second inner sidewall of the recess. The epitaxial pattern contacts the first inner sidewall and the second inner sidewall of the recess region. | 10-06-2011 |
20120021537 | METHODS OF EVALUATING EPITAXIAL GROWTH AND METHODS OF FORMING AN EPITAXIAL LAYER - A method of evaluating an epitaxial growing process includes forming a mold layer on each of a plurality of substrates, forming a photoresist pattern on each mold layer, the photoresist pattern having opening portions, a total area of a bottom portion of the opening portions being different for each substrate, patterning each mold layer to expose a surface portion of the substrate to form an evaluation pattern on each substrate, evaluation patterns including opening portions corresponding to the opening portion in the photoresist pattern, determining substrate opening ratios for each substrate based on the opening portions in the evaluation pattern thereon, the substrate opening ratios being different for each substrate, performing a selective epitaxial process on each substrate to form an epitaxial layer, and evaluating characteristics of the epitaxial layer for each substrate to determine an optimal substrate opening ratio. | 01-26-2012 |
20120223364 | TRANSISTORS AND METHODS OF MANUFACTURING THE SAME - In a method of manufacturing a transistor, a gate structure is formed on a substrate including silicon. An upper portion of the substrate adjacent to the gate structure is etched to form a first recess in the substrate. A preliminary first epitaxial layer including silicon-germanium is formed in the first recess. An upper portion of the preliminary first epitaxial layer is etched to form a second recess on the preliminary first epitaxial layer. In addition, a portion of the preliminary first epitaxial layer adjacent to the second recess is etched to thereby transform the preliminary first epitaxial layer into a first epitaxial layer. A second epitaxial layer including silicon-germanium is formed in the second recess located on the first epitaxial layer. | 09-06-2012 |
20120241815 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate. | 09-27-2012 |
20120244674 | METHODS FOR FABRICATING SEMICONDUCTOR DEVICES - A method of fabricating a semiconductor device includes providing a semiconductor substrate including a channel region, forming a gate electrode structure on the channel region of the semiconductor substrate, forming a first trench in the semiconductor substrate, and forming a second trench in the semiconductor device. The first trench may include a first tip that protrudes toward the channel. The second trench may be an enlargement of the first trench and may include a second tip that also protrudes toward the channel region. In some examples, the second tip may protrude further towards the channel region than the first tip. | 09-27-2012 |
20130109144 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME | 05-02-2013 |
20140084350 | SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a gate pattern disposed on a semiconductor substrate, a bulk epitaxial pattern disposed in a recess region formed in the semiconductor substrate at a side of the gate pattern, an insert epitaxial pattern disposed on the bulk epitaxial pattern, and a capping epitaxial pattern disposed on the insert epitaxial pattern. The bulk epitaxial pattern has an upper inclined surface that is a {111} crystal plane, and the insert epitaxial pattern includes a specific element that promotes the growth rate of the insert epitaxial pattern on the upper inclined surface. | 03-27-2014 |
20140087537 | SEMICONDUCTOR DEVICES INCLUDING MULTILAYER SOURCE/DRAIN STRESSORS AND METHODS OF MANUFACTURING THE SAME - A semiconductor device including source drain stressors and methods of manufacturing the same are provided. The methods may include forming a recess region in the substrate at a side of a gate pattern, and an inner surface of the recess region may include a first surface of a (100) crystal plane and a second surface of one of {111} crystal planes. The method may further include performing a first selective epitaxial growth (SEG) process to form a base epitaxial pattern on the inner surface of the recess region at a process pressure in a range of about 50 Torr to about 300 Torr. The method may also include performing a second selective epitaxial growth (SEG) process to form a bulk epitaxial pattern on the base epitaxial pattern. | 03-27-2014 |
20140312430 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate. | 10-23-2014 |