Patent application number | Description | Published |
20080203390 | METHOD FOR MANUFACTURING A SIGNAL LINE, THIN FILM TRANSISTOR PANEL, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR PANEL - A method for manufacturing a thin film transistor array panel includes forming a gate line on a substrate; sequentially forming a gate insulating layer, a silicon layer, and a conductor layer including a lower layer and an upper layer on the gate line, forming a photoresist film, on the conductor layer, patterning the photoresist film to form a photoresist pattern including a first portion and a second portion having a greater thickness than the first portion, etching the upper layer and the lower layer by using the photoresist pattern as art etch mask, etching the silicon layer by using the photoresist pattern as an etch mask to form a semiconductor, removing the second portion of the photoresist pattern by using an etch back process, selectively wet-etching the upper layer of the conductor layer by using the photoresist pattern as an etch mask, dry-etching the lower layer of the conductor layer by using the photoresist pattern as an etch mask to form a data line and a drain electrode including remaining upper and lower layers, and forming a pixel electrode connected to the drain electrode. | 08-28-2008 |
20080308795 | Thin film transistor array panel and manufacturing method thereof - The disclosed thin film transistor array panel includes an insulating substrate, a channel layer including an oxide formed on the insulating substrate. A gate insulating is layer formed on the channel layer and a gate electrode is formed on the gate insulating layer. An interlayer insulating layer is formed on the gate electrode and a data line formed on the interlayer insulating layer and includes a source electrode, wherein the data line is made of a first conductive layer and a second conductive layer. A drain electrode formed on the interlayer insulating layer, and includes the first conductive layer and the second conductive layer. A pixel electrode extends from the first conductive layer of the drain electrode and a passivation layer formed on the data line and the drain electrode. A spacer formed on the passivation layer. | 12-18-2008 |
20080308826 | THIN-FILM TRANSISTOR, ARRAY SUBSTRATE HAVING THE THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE ARRAY SUBSTRATE - A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and drain electrodes is substantially same as an outline of the semiconductor pattern. The gate electrode is disposed in a region between the source and drain electrodes such that portions of the gate electrode are overlapped with the source and drain electrodes. Therefore, leakage current induced by light is minimized. As a result, characteristics of the thin-film transistor are enhanced, after-image is reduced to enhance display quality, and stability of manufacturing process is enhanced. | 12-18-2008 |
20090162982 | ARRAY SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME - An array substrate includes a switching element, a signal transmission line, a passivation layer and a pixel electrode. The switching element is disposed on an insulating substrate. The signal transmission line is connected to the switching element and includes a barrier layer, a conductive line, and a copper nitride layer. The barrier layer is disposed on the insulating substrate. The conductive line is disposed on the barrier layer and includes copper or copper alloy. The copper nitride layer covers the conductive line. The passivation layer covers the switching element and the signal transmission line and has a contact hole through which a drain electrode of the switching element is partially exposed. The pixel electrode is disposed on the insulating substrate, and is connected to the drain electrode of the switching element through the contact hole. | 06-25-2009 |
20090174835 | LIQUID CRYSTAL DISPLAY AND METHOD OF FABRICATING THE SAME TO HAVE TFT'S WITH PIXEL ELECTRODES INTEGRALLY EXTENDING FROM ONE OF THE SOURCE/DRAIN ELECTRODES - A liquid crystal display (LCD) includes thin film transistors (TFTs) each having spaced apart source/drain electrodes and an oxide-type semiconductive film disposed over and between the source/drain electrodes to define an active layer. Each of the source/drain electrodes includes a portion of a subdivided transparent conductive layer where one subdivision of the transparent conductive layer continues from within its one of the source/drain electrodes to define an optically exposed pixel-electrode that is reliably connected integrally to the one source/drain electrode. Mass production costs can be reduced and production reliability increased because a fewer number of photolithographic masks can be used to form the TFTs. | 07-09-2009 |
20090184315 | THIN FILM TRANSISTOR ARRAY SUBSTRATE HAVING IMPROVED ELECTRICAL CHARACTERISTICS AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array substrate, which can have high mobility of charge and can achieve uniform electrical characteristics for wide display devices, and a method of manufacturing the thin film transistor array substrate, are provided. The thin film transistor array substrate includes an oxide semiconductor layer having a channel and formed on an insulating substrate, a gate electrode overlapping the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the gate electrode, and a passivation film formed on the oxide semiconductor layer and the gate electrode. At least one of the gate insulating film and the passivation film contains fluorine-containing silicon. | 07-23-2009 |
20090236627 | METHOD OF FORMING METAL WIRING - Provided is a method of forming metal wiring. The method includes forming a photosensitive film pattern on a substrate, hydrophobicizing at least part of the photosensitive film pattern, coating metal ink on the substrate having the photosensitive film pattern, forming a seed layer, and forming a metal layer. Alternatively, a trench is formed by using the photosensitive film pattern as a mask, and metal aerosol is sprayed to form the seed layer and then the metal layer. In this method, there is no need to form a metal thin film on the photosensitive film pattern when the seed layer is formed. As a result, less metal is wasted, which, in turn, significantly reduces manufacturing costs. | 09-24-2009 |
20100051933 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other. | 03-04-2010 |
20100051935 | LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode. | 03-04-2010 |
20100123136 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer. | 05-20-2010 |
20100148169 | THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME - A thin-film transistor (TFT) substrate has improved electrical properties and reduced appearance defects and a method of fabricating the TFT substrate, are provided. The TFT substrate includes: gate wiring which is formed on a surface of an insulating substrate; oxide active layer patterns which are formed on the gate wiring and include an oxide of a first material; buffer layer patterns which are disposed on the oxide active layer patterns to directly contact the oxide active layer patterns and include a second material; and data wiring which is formed on the buffer layer patterns to insulatedly cross the gate wiring, wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material. | 06-17-2010 |
20100149138 | Display apparatuses and methods of operating the same - Provided are display apparatuses and methods of operating the same. In a display apparatus, a display image may be continuously held for longer than about 10 msec after the power of the display panel is turned off. The display apparatus may indicate a liquid crystal display (LCD) apparatus including an oxide thin film transistor (TFT). Off leakage current of the oxide TFT may be less than about 10 | 06-17-2010 |
20100149476 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes; a base substrate, a deformation preventing layer disposed on a lower surface of the base substrate, wherein the deformation preventing layer applies a force to the base substrate to prevent the base substrate from bending, a gate line disposed on an upper surface of the base substrate, a data line disposed on the base substrate, and a pixel electrode disposed on the base substrate. | 06-17-2010 |
20100155715 | DISPLAY SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME - A display substrate according to the present invention comprises a gate line formed on a substrate. a data line, a thin film transistor connected to the gate line and the data line respectively and pixel electrode connected to the thin film transistor, wherein a channel of the thin film transistor is formed in a direction perpendicular to the substrate and, a layer where the channel is formed includes an oxide semiconductor pattern. ON current of thin film transistor of the display substrate can be increased without loss of aperture ratio. | 06-24-2010 |
20100155721 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A thin film transistor (TFT) array substrate is provided. The thin film transistor (TFT) array substrate includes an insulating substrate, an oxide semiconductor layer formed on the insulating substrate and including an additive element, a gate electrode overlapping the oxide semiconductor layer, and a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode, wherein the oxygen bond energy of the additive element is greater than that of a base element of the oxide semiconductor layer. | 06-24-2010 |
20100283050 | FLAT PANEL DISPLAYS COMPRISING A THIN-FILM TRANSISTOR HAVING A SEMICONDUCTIVE OXIDE IN ITS CHANNEL AND METHODS OF FABRICATING THE SAME FOR USE IN FLAT PANEL DISPLAYS - Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask. | 11-11-2010 |
20110124163 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode. | 05-26-2011 |
20110140103 | THIN-FILM TRANSISTOR, ARRAY SUBSTRATE HAVING THE THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE ARRAY SUBSTRATE - A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and drain electrodes is substantially same as an outline of the semiconductor pattern. The gate electrode is disposed in a region between the source and drain electrodes such that portions of the gate electrode are overlapped with the source and drain electrodes. Therefore, leakage current induced by light is minimized. As a result, characteristics of the thin-film transistor are enhanced, after-image is reduced to enhance display quality, and stability of manufacturing process is enhanced. | 06-16-2011 |
20110169060 | WIRE STRUCTURE, METHOD FOR FABRICATING WIRE, THIN FILM TRANSISTOR SUBSTRATE, AND METHOD FOR FABRICATING THE THIN FILM TRANSISTOR SUBSTRATE - Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including a copper layer and a copper solid solution layer. | 07-14-2011 |
20110266538 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer. | 11-03-2011 |
20110309510 | ARRAY SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME - An array substrate includes a switching element, a signal transmission line, a passivation layer and a pixel electrode. The switching element is disposed on an insulating substrate. The signal transmission line is connected to the switching element and includes a barrier layer, a conductive line, and a copper nitride layer. The barrier layer is disposed on the insulating substrate. The conductive line is disposed on the barrier layer and includes copper or copper alloy. The copper nitride layer covers the conductive line. The passivation layer covers the switching element and the signal transmission line and has a contact hole through which a drain electrode of the switching element is partially exposed. The pixel electrode is disposed on the insulating substrate, and is connected to the drain electrode of the switching element through the contact hole. | 12-22-2011 |
20120148106 | TERMINAL AND METHOD FOR PROVIDING AUGMENTED REALITY - A method for providing augmented reality includes acquiring a real-world image including an object; transmitting terminal information, in which the terminal information includes a location information of a terminal and an original retrieval distance; receiving object information corresponding to the object, in which the object information is based on the transmitted terminal information; and overlapping the received object information over the corresponding object in the real-world image. A terminal to perform the methods described herein includes a location information providing unit, an information transmitting/receiving unit, an image processing unit, and a user view analyzing unit. | 06-14-2012 |
20120205651 | LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode. | 08-16-2012 |
20120206877 | CAPACITOR MODULE - Disclosed herein is a capacitor module including at least one capacitor, a cooling case accommodating the capacitor, and a cooling unit disposed in the cooling case and cooling a side surface of the capacitor. | 08-16-2012 |
20130005082 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other. | 01-03-2013 |
20130095590 | LIQUID CRYSTAL DISPLAY AND METHOD OF FABRICATING THE SAME TO HAVE TFT'S WITH PIXEL ELECTRODES INTEGRALLY EXTENDING FROM ONE OF THE SOURCE/DRAIN ELECTRODES - A liquid crystal display (LCD) includes thin film transistors (TFTs) each having spaced apart source/drain electrodes and an oxide-type semiconductive film disposed over and between the source/drain electrodes to define an active layer. Each of the source/drain electrodes includes a portion of a subdivided transparent conductive layer where one subdivision of the transparent conductive layer continues from within its one of the source/drain electrodes to define an optically exposed pixel-electrode that is reliably connected integrally to the one source/drain electrode. Mass production costs can be reduced and production reliability increased because a fewer number of photolithographic masks can be used to form the TFTs. | 04-18-2013 |
20130168669 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer. | 07-04-2013 |
20130295731 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode. | 11-07-2013 |
20130336587 | REGION GROWING APPARATUS AND METHOD USING MULTI-CORE - A region growing apparatus using multi-core includes a plurality of cores, each core including an operation controller configured to perform an operation for region growing of a 2D pixel region or 3D pixel region and an inner memory configured to store a queue associated with a seed pixel as a target of the operation; and a shared memory connected to the plurality of cores over a network and shared by the plurality of cores. | 12-19-2013 |
20140071367 | DISPLAY APPARATUSES AND METHODS OF OPERATING THE SAME - Provided are display apparatuses and methods of operating the same. In a display apparatus, a display image may be continuously held for longer than about 10 msec after the power of the display panel is turned off. The display apparatus may indicate a liquid crystal display (LCD) apparatus including an oxide thin film transistor (TFT). Off leakage current of the oxide TFT may be less than about 10 | 03-13-2014 |
20140158327 | WATER COOLING APPARATUS - A water cooling apparatus is disposed outside an electronic apparatus equipped with a heat generating part to cool heat generated from the heat generating part by using a coolant. The water cooling apparatus includes a plurality of hollow tubes through which the coolant receiving the heat of the heat generating part flows to be cooled. Each hollow tube is formed in a shape of a quadratic curve. The water cooling apparatus further includes at least one radiator that includes a plurality of heat dissipation fins coupled to the plurality of hollow tubes and is arranged to be separated from each other along the plurality of hollow tubes. | 06-12-2014 |
20140340938 | FLYBACK CONVERTER USING COAXIAL CABLE TRANSFORMER - Disclosed is a flyback converter using a coaxial cable transformer which includes: a flyback driving unit that supplies a primary current; a transformer that is formed by winding a cable, which has a plurality of inner conductors as a primary cable and an outer conductor enclosing the inner conductors as a secondary cable, around a magnetic core and by connecting both ends of the primary cable and that receives the primary current and outputs a secondary current in accordance with the turn ratio of the primary cable and the secondary cable; a rectifying diode that rectifies the secondary current; and an output capacitor that smoothes a voltage through the rectifying diode. | 11-20-2014 |