Patent application number | Description | Published |
20100065841 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer. | 03-18-2010 |
20100276686 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME - A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance. | 11-04-2010 |
20110001137 | THIN-FILM TRANSISTOR DISPLAY PANEL AND METHOD OF FABRICATING THE SAME - Provided is a thin-film transistor (TFT) display panel having improved electrical and reliability properties and a method of fabricating the TFT display panel. The TFT display panel includes gate wiring formed on a substrate; an oxide active layer pattern formed on the gate wiring; data wiring formed on the oxide active layer pattern to cross the gate wiring; a passivation layer formed on the oxide active layer pattern and the data wiring and made of nitrogen oxide; and a pixel electrode disposed on the passivation layer. | 01-06-2011 |
20110031117 | SPUTTERING TARGET APPARATUS - A sputtering target apparatus is provided. The sputtering target apparatus includes a first target assembly including a first target array having a first target, a second target disposed adjacent to the first target, and a first target dividing region disposed between the first and second targets, the first target assembly extending along a first direction, wherein the first target dividing region has a longitudinal cross-section that is oblique with respect to the first direction. | 02-10-2011 |
20110068340 | Thin Film Transistor Array Panel and Method for Manufacturing the Same - A thin film transistor array panel includes an insulating substrate. A gate line is formed on the insulating substrate and has a gate electrode. A gate insulating layer is formed on the gate line. A semiconductor layer is formed on the gate insulating layer and overlaps the gate electrode. Diffusion barriers are formed on the semiconductor layer and contain nitrogen. A data line crosses the gate line and has a source electrode partially contacting the diffusion barriers and a drain electrode partially contacting the diffusion barriers and facing the source electrode. The drain electrode is on the gate electrode. A pixel electrode is electrically connected to the drain electrode. | 03-24-2011 |
20110114940 | THIN FILM DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a gate insulating layer disposed on the gate line; an semiconductive oxide layer disposed on the gate insulating layer; a data line disposed on the semiconductive oxide layer and including a source electrode; a drain electrode facing the source electrode on the semiconductive oxide layer; and a passivation layer disposed on the data line. The semiconductive oxide layer is patterned with chlorine (Cl) containing gas which alters relative atomic concentrations of primary semiconductive characteristic-providing elements of the semiconductive oxide layer at least at a portion where a transistor channel region is defined. | 05-19-2011 |
20110147740 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME - The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT comprises an oxide semiconductor layer; a protective layer disposed on the oxide semiconductor layer and overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode with the channel region disposed between the drain electrode and the source electrode; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer. | 06-23-2011 |
20110175082 | DISPLAY SUBSTRATE - A display substrate is provided. The display substrate includes a gate interconnection disposed on an insulating substrate, an oxide semiconductor pattern disposed on the gate interconnection and including an oxide semiconductor, and a data interconnection disposed on the oxide semiconductor pattern to interconnect the gate interconnection. The oxide semiconductor pattern includes a first oxide semiconductor pattern having a first oxide and a first element and a second oxide semiconductor pattern having a second oxide. | 07-21-2011 |
20110193076 | THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF - A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper. | 08-11-2011 |
20120037910 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes; a gate pattern including a gate electrode disposed on a substrate, a gate insulation layer disposed on the substrate and the gate pattern, an insulation pattern including; a first thickness part disposed on a first area of the gate insulation layer overlapping the gate electrode and a second thickness part disposed on a second area of the gate insulation layer adjacent to the first area, an oxide semiconductor pattern disposed on the first thickness part of the first area, an etch stopper disposed on the oxide semiconductor pattern, a source pattern including a source electrode and a drain electrode which contact the oxide semiconductor pattern, and a pixel electrode which contacts the drain electrode. | 02-16-2012 |
20120211753 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE - In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified. | 08-23-2012 |
20120319112 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR PANEL AND METHODS FOR MANUFACTURING THE SAME - A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer on the gate insulating layer, and a drain electrode and a source electrode on the oxide semiconductor layer and spaced apart from each other. The drain electrode includes a first drain sub-electrode on the oxide semiconductor layer, and a second drain sub-electrode on the first drain sub-electrode. The source electrode includes a first source sub-electrode on the oxide semiconductor layer, and a second source sub-electrode on the first source sub-electrode. The first drain sub-electrode and the first source sub-electrode include gallium zinc oxide (GaZnO), and the second source sub-electrode and the second drain sub-electrode include a metal atom. | 12-20-2012 |
20130009151 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer. | 01-10-2013 |
20130032793 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - Provided is a thin film transistor array panel. The thin film transistor array panel according to exemplary embodiments of the present invention includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy. | 02-07-2013 |
20130228772 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode. | 09-05-2013 |
20130299817 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc. | 11-14-2013 |
20140076714 | SPUTTERING DEVICE - A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device. | 03-20-2014 |
20140209903 | THIN FILM TRANSISTOR PANEL HAVING AN ETCH STOPPER ON SEMICONDUCTOR - A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper. | 07-31-2014 |
20140312344 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer. | 10-23-2014 |
20150155309 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate metal pattern including a gate line disposed on a base substrate and a gate electrode electrically connected with the gate line, an active pattern entirely overlapped with the gate metal pattern and comprising an oxide semiconductor and a data metal pattern disposed on the active pattern and including a data line, a source electrode electrically connected with the gate line and a drain electrode spaced apart from the source electrode. The active pattern has an overlapped region in which the active pattern is overlapped with the source electrode and the drain electrode and an exposed region in which the active pattern is not overlapped with the source electrode and the drain electrode. The thickness of the overlapping region and a thickness of the exposing region are same. | 06-04-2015 |
20150311234 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc. | 10-29-2015 |
20150318312 | THIN FILM TRANSISTOR PANEL HAVING AN ETCH STOPPER ON SEMICONDUCTOR - A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper. | 11-05-2015 |
20150318317 | THIN FILM TRANSISTOR PANEL HAVING AN ETCH STOPPER ON SEMICONDUCTOR - A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper. | 11-05-2015 |
20150333183 | THIN FILM TRANSISTOR, DISPLAY SUBSTRATE HAVING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor include a control electrode, a semiconductor layer on the control electrode, an input electrode, at least a portion of the input electrode being on the semiconductor layer, and an output electrode spaced apart from the input electrode, at least a portion of the output electrode being on the semiconductor layer. Each of the input electrode and the output electrode includes a wiring layer including a metal material, a dummy portion on a side part of the wiring layer, the dummy portion including an oxide of the metal material, and a protection layer on the wiring layer, the protection layer overlapping the wiring layer and the dummy portion. | 11-19-2015 |
20150340507 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer. | 11-26-2015 |
Patent application number | Description | Published |
20090075438 | METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - In a method of fabricating organic light emitting diode display, a planarization layer is annealed, cured, provided with an ashing treatment, and surface-treated to reduce roughness of the planarization layer. Therefore, it is possible to improve reduce problems such as a decrease in reflectivity and variation of color coordinates of the organic light emitting diode display due to the roughness of the planarization layer. | 03-19-2009 |
20090137074 | Method of manufacturing display device - A method of manufacturing a display device includes: preparing a substrate including a first area and a second area, forming a first layer on the first area and the second area, forming a second layer on the first layer of the first area, respectively forming a first electrode layer on the second layer of the first area and the first layer of the second area, forming a reflective layer on the first electrode layer of the first area, and forming a second electrode layer on the reflective layer. | 05-28-2009 |
20090267074 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A organic light emitting display device includes a thin film transistor (TFT) having a gate electrode, a source electrode and a drain electrode which are insulated from the gate electrode, and a semiconductor layer which is insulated from the gate electrode and which contacts each of the source electrode and the drain electrode; and a pixel electrode electrically connected to one of the source electrode and the drain electrode. The gate electrode is made up of a first conductive layer and a second conductive layer on the first conductive layer, and the pixel electrode is formed of the same material as the first conductive layer of the gate electrode on a same layer as the first conductive layer of the gate electrode. | 10-29-2009 |
20090278131 | Thin film transistor array arrangement, organic light emitting display device having the same, and manufacturing method thereof - A thin film transistor (TFT) array arrangement, an organic light emitting display device that includes the TFT array arrangement and a method of making the TFT array arrangement and the organic light emitting display device. The method seeks to reduce the number of masks used in the making of the TFT array arrangement by employing half-tone masks that are followed by a two step etching process and by forming layers of the capacitor simultaneous with the formation of layers of the source, drain and pixel electrodes. As a result, individual layers of the capacitor are on the same level and are made of the same material as ones of the layers of the source, drain and pixel electrodes. The capacitor has three electrodes spaced apart by two separate dielectric layers to result in an increased capacity capacitor without increasing the size of the capacitor. | 11-12-2009 |
20100045173 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display (OLED) apparatus and a method of manufacturing the same, the OLED apparatus including: a substrate; an active layer formed on the substrate; a gate electrode insulated from the active layer; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a pixel defining layer formed on the source and drain electrodes, having an aperture to expose one of the source and drain electrodes; an intermediate layer formed in the aperture and comprising an organic light emitting layer; and a facing electrode which is formed on the intermediate layer. One of the source and drain electrodes has an extension that operates as a pixel electrode. The aperture exposes the extended portion. The intermediate layer is formed on the extended portion. | 02-25-2010 |
20120220061 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display (OLED) apparatus and a method of manufacturing the same, the OLED apparatus including: a substrate; an active layer formed on the substrate; a gate electrode insulated from the active layer; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a pixel defining layer formed on the source and drain electrodes, having an aperture to expose one of the source and drain electrodes; an intermediate layer formed in the aperture and comprising an organic light emitting layer; and a facing electrode which is formed on the intermediate layer. One of the source and drain electrodes has an extension that operates as a pixel electrode. The aperture exposes the extended portion. The intermediate layer is formed on the extended portion. | 08-30-2012 |
20120288975 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting display device (OLED) and a method of fabricating the same. The OLED includes: a substrate; a thin film transistor on the substrate and including a source electrode and a drain electrode; a first insulating layer on the substrate; a second insulating layer on the first insulating layer and including a trench; a via hole formed in the trench over the first and second insulating layers and exposing a portion of the source electrode or the drain electrode; a first electrode in the trench and connected to one of the source electrode and the drain electrode through the via hole; a pixel defining layer on the first electrode and having an opening exposing the first electrode; an organic layer in the opening and having at least an organic emission layer; and a second electrode on an entire surface of the substrate having the organic layer. | 11-15-2012 |
Patent application number | Description | Published |
20140012021 | NOVEL METHOD FOR PREPARING SELENYL-SUBSTITUTED AROMATIC ALDEHYDE COMPOUNDS - The present disclosure relates to a novel method for preparing selenyl-substituted aromatic aldehyde compounds by forming a selenolate nucleophile and performing a nucleophilic substitution reaction between the selenolate nucleophile and an aromatic aldehyde starting material. | 01-09-2014 |
20140213790 | SELENOPHENE-FUSED AROMATIC COMPOUND AND MANUFACTURING METHOD THEREOF - The present disclosure relates to a method for more easily and economically producing a selenophene-fused aromatic compound derivative containing various substituents and the selenophene-fused aromatic compound produced according to the method, and the selenophene-fused aromatic compound can be used for various purposes such as an intermediate of an anti-bacterial or anticancer substance, an indicator of which color is changed depending on a solvent, or a fluorescent substance. | 07-31-2014 |
20140370022 | ANTIBODIES CROSS-REACTIVE TO HUMAN AND MOUSE c-Met AND USES THEREOF - The antibody of the invention has high specificity to human c-Met and is cross-reactive to mouse c-Met. The antibody or its antigen-binding fragment of the invention is capable of specifically binding to human c-Met as well as mouse c-Met, more accurate preclinical results can be confirmed in the efficacy evaluation using mouse tumor models. The antibody of the invention inhibits the growth of cancer cells derived from various cancers by a considerable binding affinity to c-Met and the suppression of c-Met function therefrom, inhibits the phosphorylation of c-Met and downstream signaling molecules to suppress c-Met signaling, and inhibits neovascularization, thereby being very efficient in the prevention and treatment of cancers. | 12-18-2014 |
20150038360 | Method for Multiplex-Detecting Chronic Myelogenous Leukemia Gene Using Cleavable Probe - One embodiment of the present invention provides a detection kit for detecting a chronic myelogenous leukemia (CML) gene expression, wherein the detection kit includes a primer set which is specifically bound to the CML gene; and a cleavable probe which is specifically bound to the inside of a CML gene amplification product which is amplified by the primer set. Another embodiment of the present invention provides a method of measuring the CML gene expression by using the detection kit according to one embodiment of the present invention. The method according to one embodiment of the present invention is used to efficiently detect a low CML gene expression for CML diagnosis and prognosis diagnosis. | 02-05-2015 |
20150101070 | METHOD FOR SCREENING PATIENT-SPECIFIC ANTI-CANCER AGENT USING LIMITING DILUTION ASSAY - A screening method is described for selecting patient-specific anti-cancer agents reflecting individual genetic properties, in a precise and rapid manner, using an extremely small amount of cancer cells. Such screening method is useful for development of novel anti-cancer agents and the personalized medical field. | 04-09-2015 |
20150104391 | METHOD FOR PREPARING PATIENT-SPECIFIC GLIOBLASTOMA ANIMAL MODEL, AND USES THEREOF - Provided is a method for producing a glioblastoma mouse model and the mouse model produced thereby, the method including the steps of: (a) dividing a glioblastoma tissue, isolated from a patient, into 4 or more sections, and collecting one or more pieces from each of the sections; (b) dissociating a mixture of the collected pieces into glioblastoma cells as single cells; and (c) orthotopically transplanting a graft sample containing the glioblastoma cells obtained in step (b), into the brain of an immunodeficient mouse. Further provided are a method of screening a glioblastoma therapeutic agent using the mouse model and a method of providing information for selection of a patient-specific glioblastoma therapy using the mouse model. The glioblastoma mouse model shows the same genetic, morphological and pathological characteristics as those of the parental tumor, and it allows screening patient-specific glioblastoma therapeutic agent or selecting safer and more effective patient-specific glioblastoma therapy. | 04-16-2015 |
20150141439 | PHARMACEUTICAL COMPOSITION FOR THE PREVENTION OR TREATMENT OF BRAIN TUMOR OR TEMODAL RESISTANT GLIOBLASTOMA MULTIFORM COMPRISING AZATHIOPRINE AS AN ACTIVE INGREDIENT - The present invention relates to a pharmaceutical composition for the prevention or treatment of cancer or Temodal resistant glioblastoma multiform comprising azathioprine as an active ingredient. The azathioprine of the present invention is not only effective in inhibiting the growth of glioblastoma multiform, a kind of brain tumor, but also excellent in treating glioblastoma multiform that displays resistance against Temodal (temozolomide), the conventional therapeutic agent for glioblastoma multiform, so that it can be effectively used as an active ingredient of a pharmaceutical composition for the prevention or treatment of such cancer as brain tumor (particularly, glioblastoma multiform) and particularly Temodal resistant glioblastoma multiform. | 05-21-2015 |
20150247200 | Method for Detecting C-Met Gene Using Cleavable Probe - One embodiment of the present invention provides a detection kit for detecting c-Met gene expression, wherein the detection kit includes a primer set which is specifically bound to the c-Met gene; and a cleavable probe which is specifically bound to the inside of a c-Met gene amplification product which is amplified by the primer set. Another embodiment of the present invention provides a method of measuring the c-Met gene expression by using the detection kit according to one embodiment of the present invention. The method according to one embodiment of the present invention is used to efficiently detect a low concentration of c-Met gene expression for cancer diagnosis and prognosis diagnosis. | 09-03-2015 |
20150269411 | CELL ANALYSIS APPARATUS AND METHOD - A cell analysis apparatus may include: an image processing unit imaging cultured cell colonies to convert the imaged cell colonies into digital signals; an outline extracting unit extracting outlines of the cell colonies from image data obtained from the image processing unit; a size calculating unit calculating sizes of the cell colonies from the extracted outlines; and a selecting unit comparing the sizes of the cell colonies with a preset value to select grown cell colonies. | 09-24-2015 |