Patent application number | Description | Published |
20090000665 | APPARATUS AND METHOD FOR INDUCING CONTROLLABLE JETS IN LIQUIDS - A method for inducing a controllable jet in a transparent liquid is disclosed. The method comprises providing a gas-liquid interface, providing a laser source and generating a beam comprising a sequence of laser pulses, and focusing the beam to a target location within the liquid at a predetermined distance from the gas-liquid interface and creating a plurality of cavitation bubbles, yielding a jet directed away from the gas-liquid interface. Other methods and apparatus are also described and claimed. | 01-01-2009 |
20110036991 | METHOD FOR CREATING, TRAPPING AND MANIPULATING A GAS BUBBLE IN LIQUID - A method for producing, trapping and manipulating a gas microbubble in liquid is disclosed. The method includes providing a pulsed laser source for generating a pulsed laser radiation and focusing optics; and focusing a pulsed laser radiation to a focal zone within the liquid, with energy exceeding the threshold of optical breakdown in the liquid at the focal zone. It is also suggested to use focusing optics to focus the laser beam to a focal point at a depth close to the compensation depth of the focusing optics for spherical aberration. | 02-17-2011 |
20110122395 | METHOD AND APPARATUS FOR MAPPING OF LINE-WIDTH SIZE DISTRIBUTIONS ON PHOTOMASKS - In general, in one aspect, a method includes determining a critical dimension (CD) distribution on a photomask by measuring deep Ultra-Violet (DUV) transmission across the photomask. | 05-26-2011 |
20120009511 | METHOD AND APPARATUS FOR CORRECTING ERRORS OF A PHOTOLITHOGRAPHIC MASK - A method for correcting a plurality of errors of a photolithographic mask, comprising optimizing first parameters of a imaging transformation of the photolithographic mask and second parameters of a laser beam locally directed onto the photolithographic mask, and correcting the plurality of errors by applying an imaging transformation using optimized first parameters and locally directing the laser beam onto the photolithographic mask using optimized second parameters, wherein the first and the second parameters are simultaneously optimized in a joint optimization process. | 01-12-2012 |
20120084044 | Method And Apparatus For The Determination Of Laser Correcting Tool Parameters - The invention relates to a method for determining at least one unknown laser beam parameter of a laser beam used for correcting errors of a transparent material including inducing a first persistent modification in the material by an interaction with the laser beam having a first set of laser beam parameters, measuring the induced first persistent modification of the material, calculating a second persistent modification in the material using a model describing persistent modifications in the material with a second set of laser beam parameters, wherein the first set of laser beam parameters comprises the second set of laser beam parameters and the at least one unknown laser beam parameter, setting up a target functional including the first persistent modification and the second persistent modification, and determining the at least one unknown laser beam parameter by minimizing the target functional. | 04-05-2012 |
20130028505 | ANALYSES OF MEASUREMENT DATA - A method includes generating, using a data processor, information showing variations of a parameter across a photo mask relative to an average value of the parameter measured at various locations on the photo mask. For example, the information can include data points, and each data point can be determined based on a ratio between a measurement value and an average of a plurality of measurement values. | 01-31-2013 |
20130077101 | CRITICAL DIMENSION UNIFORMITY CORRECTION BY SCANNER SIGNATURE CONTROL - A contribution to a wafer level critical dimension distribution from a scanner of a lithography system can be determined based on measured wafer level critical dimension uniformity distribution and a contribution to the wafer level critical dimension distribution from a photo mask. Light transmission ( | 03-28-2013 |
20130209926 | CONTROLLABLE TRANSMISSION AND PHASE COMPENSATION OF TRANSPARENT MATERIAL - A system for processing a substrate includes a light source to provide light pulses, a stage to support a substrate, optics to focus the light pulses onto the substrate, a scanner to scan the light pulses across the substrate, a computer to control properties of the light pulses and the scanning of the light pulses such that color centers are generated in various regions of the substrate, and at least one of (i) an ultraviolet light source to irradiate the substrate with ultraviolet light or (ii) a heater to heat the substrate after formation of the color centers to stabilize a transmittance spectrum of the substrate. | 08-15-2013 |
20130263061 | Global Landmark Method For Critical Dimension Uniformity Reconstruction - Data associated with a substrate can be processed by measuring a property of at least a first type of specific features and a second type of specific features on a substrate. The first type of specific features is measured at a first plurality of locations on the substrate to generate a first group of measured values, and the second type of specific features is measured at a second plurality of locations on the substrate to generate a second group of measured values, in which the first and second groups of measured values are influenced by critical dimension variations of the substrate. A combined measurement function is defined based on combining the at least first and second groups of measured values. At least one group of measured values is transformed prior to combining with another group or other groups of measured values, in which the transformation is defined by a group of coefficients. Variations in the critical dimension across the substrate are determined based on the combined measurement function and a predetermined relationship between the measured values and the critical dimension. | 10-03-2013 |
20130295698 | LITHOGRAPHIC TARGETS FOR UNIFORMITY CONTROL - A photo mask having a first set of patterns and a second set of patterns is provided in which the first set of patterns correspond to a circuit pattern to be fabricated on a wafer, and the second set of patterns have dimensions such that the second set of patterns do not contribute to the circuit pattern that is produced using a lithography process based on the first set of patterns under a first exposure condition. The critical dimension distribution of the photo mask is determined based on the second set of patterns that do not contribute to the circuit pattern produced using the lithography process based on the first set of patterns under the first exposure condition. | 11-07-2013 |
20140036243 | METHOD AND APPARATUS FOR CORRECTING ERRORS ON A WAFER PROCESSED BY A PHOTOLITHOGRAPHIC MASK - The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask. | 02-06-2014 |
20140347646 | METHOD AND APPARATUS FOR COMPENSATING AT LEAST ONE DEFECT OF AN OPTICAL SYSTEM - The invention relates to a method for compensating at least one defect of an optical system which comprises introducing an arrangement of local persistent modifications in at least one optical element of the optical system, which does not have pattern elements on one of its optical surfaces, so that the at least one defect is at least partially compensated. | 11-27-2014 |