Patent application number | Description | Published |
20100061108 | LIGHTING FIXTURE WITH RECESSED BAFFLE TRIM UNIT - A recessed lighting fixture providing illumination from a light source including a plurality of light emitting diodes (LEDs) placed within a cavity of a planar surface, such as a ceiling, wall, or shower. The fixture comprises a baffle integrated with a low profile heat sink that is used to draw heat out of the fixture and communicate that heat to a trim ring of the fixture for dissipation of the heat in the room so that higher intensity light sources can be used. Improved grounding of the recessed trim unit to the recessed housing is provided with combination support and grounding springs. One embodiment of the light source is fixed in position while a second embodiment is gimbal mounted for aiming the light produced by the fixture. | 03-11-2010 |
20100110705 | HANGER BAR FOR RECESSED LIGHTING FIXTURES - A hanger bar for supporting a recessed light fixture is attachable to ceiling joists or a T-bar grid of a drop down ceiling. First and second bars of the hanger bar slide and telescope. First and second spring clips are detachably coupled to the brackets at the ends of the first and second bars, respectively. Each of the first and second clips has a pair of downwardly extending arms bent inwardly toward one another, a first leg extending from a first arm, a second leg extending from a second arm, and an outwardly-extending foot on the second leg. The spring clips snap on to the T-bar grid. Each bracket includes a nail that is angled away from the hanger bar and downward so that the nail head is below the level of the hanger bar. The angled nails enable easy hammer strikes to attach the hanger bar to ceiling joists without accidental hammer blows to the hanger bar. The bracket may be discrete from the hanger bar but attached via tox clinching or a tab pass-through attachment. | 05-06-2010 |
20110192644 | ELECTRICAL JUNCTION BOX - A junction box having a sheathed cable retainer structure is disclosed. The junction box contains pry outs that cover openings at corners of the junction box wherein the pry outs are removed and a sheathed cable or like electrical wiring can pass therethrough. A strain relief bracket having segmented distal bends at opposite ends thereof engages the cable and under bias pushes the cable against an indent formed on a wall inside the junction box opposite the cable. | 08-11-2011 |
Patent application number | Description | Published |
20100075903 | Lyophilized VEGF Antagonist Formulations for Intravitreal Administration - Ophthalmic formulations of a vascular endothelial growth factor (VEGF)-specific fusion protein antagonist are provided suitable for intravitreal administration to the eye. The ophthalmic formulations include a stable liquid formulation and a lyophilizable formulation. Preferably, the protein antagonist has the amino acid sequence shown in SEQ ID NO:4. | 03-25-2010 |
20100279933 | VEGF ANTAGONIST FORMULATIONS - Formulations of a vascular endothelial growth factor (VEGF)-specific fusion protein antagonist are provided including a pre-lyophilized formulation, a reconstituted lyophilized formulation, and a stable liquid formulation. Preferably, the fusion protein has the sequence of SEQ ID NO:4. | 11-04-2010 |
20110257601 | VEGF ANTAGONIST FORMULATIONS FOR INTRAVITREAL ADMINISTRATION - Ophthalmic formulations of a vascular endothelial growth factor (VEGF)-specific fusion protein antagonist are provided suitable for intravitreal administration to the eye. The ophthalmic formulations include a stable liquid formulation and a lyophilizable formulation. Preferably, the protein antagonist has the amino acid sequence shown in SEQ ID NO:4. | 10-20-2011 |
20120014968 | STABILIZED FORMULATIONS CONTAINING ANTI-NGF ANTIBODIES - The present invention provides pharmaceutical formulations comprising a human antibody that specifically binds to human nerve growth factor (hNGF). The formulations may contain, in addition to an anti-hNGF antibody, at least one non-ionic surfactant, at least one sugar, and acetate. The pharmaceutical formulations of the present invention exhibit a substantial degree of antibody stability after storage for several months. | 01-19-2012 |
20120087929 | VEGF Antagonist Formulations for Intravitreal Administration - Ophthalmic formulations of a vascular endothelial growth factor (VEGF)-specific fusion protein antagonist are provided suitable for intravitreal administration to the eye. The ophthalmic formulations include a stable liquid formulation and a lyophilizable formulation. Preferably, the protein antagonist has the amino acid sequence of residues 27-457 of SEQ ID NO:4. | 04-12-2012 |
20120101035 | VEGF Antagonist Formulations - Formulations of a vascular endothelial growth factor (VEGF)-specific fusion protein antagonist are provided including a pre-lyophilized formulation, a reconstituted lyophilized formulation, and a stable liquid formulation. Preferably, the fusion protein has the sequence of SEQ ID NO:4. | 04-26-2012 |
20120178683 | VEGF ANTAGONIST FORMULATIONS - Formulations of a vascular endothelial growth factor (VEGF)-specific fusion protein antagonist are provided including a pre-lyophilized formulation, a reconstituted lyophilized formulation, and a stable liquid formulation. Preferably, the fusion protein has the sequence of SEQ ID NO:4. | 07-12-2012 |
20130189277 | Stabilized Formulations Containing Anti-PCSK9 Antibodies - The present invention provides pharmaceutical formulations comprising a human antibody that specifically binds to human proprotein convertase subtilisin/kexin type 9 (PCSK9). The formulations may contain, in addition to an anti-PCSK9 antibody, at least one amino acid, at least one sugar, or at least one non-ionic surfactant. The pharmaceutical formulations of the present invention exhibit a substantial degree of antibody stability after storage for several months. | 07-25-2013 |
20130261056 | VEGF ANTAGONIST FORMULATIONS - Formulations of a vascular endothelial growth factor (VEGF)-specific fusion protein antagonist are provided including a pre-lyophilized formulation, a reconstituted lyophilized formulation, and a stable liquid formulation. Preferably, the fusion protein has the sequence of SEQ ID NO:4. | 10-03-2013 |
20130274189 | VEGF Antagonist Formulations for Intravitreal Administration - Ophthalmic formulations of a vascular endothelial growth factor (VEGF)-specific fusion protein antagonist are provided suitable for intravitreal administration to the eye. The ophthalmic formulations include a stable liquid formulation and a lyophilizable formulation. Preferably, the protein antagonist has an amino acid sequence of SEQ ID NO:4. | 10-17-2013 |
20130323260 | STABILIZED FORMULATIONS CONTAINING ANTI-DLL4 ANTIBODIES - The present invention provides pharmaceutical formulations comprising an antibody that specifically binds to human delta-like ligand 4 (Dll4). The formulations may contain, in addition to an anti-Dll4 antibody, a phosphate buffer, an organic cosolvent, a disaccharide, and a salt. The pharmaceutical formulations of the present invention exhibit a substantial degree of antibody stability after storage for several months and after being subjected to thermal and other physical stress | 12-05-2013 |
20140323983 | VEGF Antagonist Formulations for Intravitreal Administration - Ophthalmic formulations of a vascular endothelial growth factor (VEGF)-specific fusion protein antagonist are provided suitable for intravitreal administration to the eye. The ophthalmic formulations include a stable liquid formulation and a lyophilizable formulation. Preferably, the protein antagonist has an amino acid sequence of SEQ ID NO:4. | 10-30-2014 |
20150079087 | VEGF ANTAGONIST FORMULATIONS - Formulations of a vascular endothelial growth factor (VEGF)-specific fusion protein antagonist are provided including a pre-lyophilized formulation, a reconstituted lyophilized formulation, and a stable liquid formulation. Preferably, the fusion protein has the sequence of SEQ ID NO:4. | 03-19-2015 |
20160101181 | PROCESS FOR REDUCING SUBVISIBLE PARTICLES IN A PHARMACEUTICAL FORMULATION - The present disclosure provides a stable protein composition containing a surfactant and having less than 400 subvisible particles of 10 microns or greater diameter per container, or less than 10,000 subvisible particles of 2 microns or greater per container. A method of manufacturing such a stable protein composition is disclosed, which includes a unit of operation that removes or decreases an esterase activity that degrades the surfactant. The unit of operation may be hydrophobic interaction chromatography or filtration, mixed mode chromatography, or the like. | 04-14-2016 |
Patent application number | Description | Published |
20110171241 | Stabilized Formulations Containing Anti-Interleukin-6 (IL-6) Antibodies - The present invention provides pharmaceutical formulations comprising a human antibody that specifically binds to human interleukin-6 receptor (hIL-6R). The formulations may contain, in addition to an anti-hIL-6R antibody, at least one amino acid, at least one sugar, and/or at least one non-ionic surfactant. The pharmaceutical formulations of the present invention exhibit a substantial degree of antibody stability after storage for several months. | 07-14-2011 |
20120097565 | Stabilized Formulations Containing Anti-Interleukin-4 Receptor (IL-4R) Antibodies - The present invention provides pharmaceutical formulations comprising a human antibody that specifically binds to human interleukin-4 receptor (hIL-4R). The formulations may contain, in addition to an anti-hIL-4R antibody, at least one amino acid, at least one sugar, or at least one non-ionic surfactant. The pharmaceutical formulations of the present invention exhibit a substantial degree of antibody stability after storage for several months. | 04-26-2012 |
20130186797 | Stabilized Formulations Containing Anti-Ang2 Antibodies - The present invention provides pharmaceutical formulations comprising an antibody that specifically binds to angiopoietin 2 (Ang-2). The formulations may contain, in addition to an anti-Ang-2 antibody, at least one amino acid, at least one sugar, or at least one non-ionic surfactant. The pharmaceutical formulations of the present invention exhibit a substantial degree of antibody stability after storage for several months and after being subjected to thermal and other physical stress. | 07-25-2013 |
20140341928 | Stabilized Formulations Containing Anti-PCSK9 Antibodies - The present invention provides pharmaceutical formulations comprising a human antibody that specifically binds to human proprotein convertase subtilisin/kexin type 9 (PCSK9). The formulations may contain, in addition to an anti-PCSK9 antibody, at least one amino acid, at least one sugar, or at least one non-ionic surfactant. The pharmaceutical formulations of the present invention exhibit a substantial degree of antibody stability after storage for several months. | 11-20-2014 |
20150100030 | Stabilized Formulations Containing Anti-Interleukin-4 Receptor (IL-4R) Antibodies - The present invention provides pharmaceutical formulations comprising a human antibody that specifically binds to human interleukin-4 receptor (hIL-4R). The formulations may contain, in addition to an anti-hIL-4R antibody, at least one amino acid, at least one sugar, or at least one non-ionic surfactant. The pharmaceutical formulations of the present invention exhibit a substantial degree of antibody stability after storage for several months. | 04-09-2015 |
20160002341 | Stabilized Formulations Containing Anti-Interleukin-6 Receptor (IL-6R) Antibodies - The present invention provides pharmaceutical formulations comprising a human antibody that specifically binds to human interleukin-6 receptor (hIL-6R). The formulations may contain, in addition to an anti-hIL-6R antibody, at least one amino acid, at least one sugar, and/or at least one non-ionic surfactant. The pharmaceutical formulations of the present invention exhibit a substantial degree of antibody stability after storage for several months. | 01-07-2016 |
20160032015 | Stabilized Formulations Containing Anti-PCSK9 Antibodies - The present invention provides pharmaceutical formulations comprising a human antibody that specifically binds to human proprotein convertase subtilisin/kexin type 9 (PCSK9). The formulations may contain, in addition to an anti-PCSK9 antibody, at least one amino acid, at least one sugar, or at least one non-ionic surfactant. The pharmaceutical formulations of the present invention exhibit a substantial degree of antibody stability after storage for several months. | 02-04-2016 |
20160102147 | Stabilized Formulations Containing Anti-Interleukin-4 Receptor (IL-4R) Antibodies - The present invention provides pharmaceutical formulations comprising a human antibody that specifically binds to human interleukin-4 receptor (hIL-4R). The formulations may contain, in addition to an anti-hIL-4R antibody, at least one amino acid, at least one sugar, or at least one non-ionic surfactant. The pharmaceutical formulations of the present invention exhibit a substantial degree of antibody stability after storage for several months. | 04-14-2016 |
Patent application number | Description | Published |
20090250766 | Work Function Based Voltage Reference - A voltage reference is created from an operational amplifier circuit having two substantially identical P-channel metal oxide semiconductor (P-MOS) transistors with each one having a different gate dopant. The different gate dopants result in different threshold voltages for each of the two otherwise substantially identical P-MOS transistors. The difference between these two threshold voltages is then used to create the voltage reference equal to the difference. The two P-MOS transistors are configured as a differential pair in the operational amplifier circuit and the output of the operational amplifier is used as the voltage reference. | 10-08-2009 |
20090251204 | Temperature Compensated Work Function Based Voltage Reference - A temperature compensated voltage reference is created from an operational amplifier circuit having two substantially identical P-channel metal oxide semiconductor (P-MOS) transistors with each one having a different gate dopant. The different gate dopants result in different threshold voltages for each of the two otherwise substantially identical P-MOS transistors. The difference between these two threshold voltages is then used to create the voltage reference equal to the difference. The two P-MOS transistors are configured as a differential pair in the operational amplifier circuit and the output of the operational amplifier is used as the voltage reference. The transistor widths of two P-MOS transistors are adjusted to minimize voltage variation over a temperature range. | 10-08-2009 |
20100164468 | Work Function Based Voltage Reference - A voltage reference is created from an operational amplifier circuit having two substantially identical P-channel metal oxide semiconductor (P-MOS) transistors with each one having a different gate dopant. The different gate dopants result in different threshold voltages for each of the two otherwise substantially identical P-MOS transistors. The difference between these two threshold voltages is then used to create the voltage reference equal to the difference. The two P-MOS transistors are configured as a differential pair in the operational amplifier circuit and the output of the operational amplifier is used as the voltage reference. | 07-01-2010 |
20120126312 | VERTICAL DMOS-FIELD EFFECT TRANSISTOR - A vertical diffused metal oxide semiconductor (DMOS) field-effect transistors (FET), has a cell structure with a substrate; an epitaxial layer or well of the first conductivity type on the substrate; first and second base regions of the second conductivity type arranged within the epitaxial layer or well and spaced apart by a predefined distance; first and second source regions of a first conductivity type arranged within the first and second base region, respectively; a gate structure insulated from the epitaxial layer or well by an insulation layer and arranged above the region between the first and second base regions and covering at least partly the first and second base region, wherein the gate structure comprises first and second gates being spaced apart wherein each gate covers a respective portion of the base region. | 05-24-2012 |
20120126313 | ULTRA THIN DIE TO IMPROVE SERIES RESISTANCE OF A FET - A method for producing a power field effect transistor (FET) device having a low series resistance between the drain and source when switched on has the steps of: forming a vertical power FET in a semiconductor die; and back-grinding the semiconductor die to a thickness of less than or equal to about 100 μm (4 mils) or less. | 05-24-2012 |
20120126320 | METHOD FOR MANUFACTURING A MOS-FIELD EFFECT TRANSISTOR - A method for manufacturing a Power Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) has the steps of: implanting a base region of the Power MOSFET within an epitaxial layer of a semiconductor chip comprising an insulated gate structure, implanting a source link region on one side of the gate through a first mask, wherein the first mask is partially formed by an edge of the gate, the source link extending from a surface into the epitaxial layer and having a width defined by the first window, subsequently forming a spacer extending from the edge of the gate which defines the first window and forming a second mask which is partially formed by the spacer, and implanting a source region through the second mask. | 05-24-2012 |
20120126341 | USING LOW PRESSURE EPI TO ENABLE LOW RDSON FET - A method for forming an epitaxial layer on a substrate may have the steps of: forming a heavily doped silicon substrate; depositing an epitaxial layer at sub atmospheric pressure on the heavily doped silicon substrate; and implanting dopant into the epitaxial layer by ion implantation to form a lightly doped epitaxial layer. | 05-24-2012 |
20120126406 | USING BUMP BONDING TO DISTRIBUTE CURRENT FLOW ON A SEMICONDUCTOR POWER DEVICE - A semiconductor power chip may have a semiconductor die having a power device fabricated on a substrate thereof, wherein the power device has at least one first contact element, a plurality of second contact elements and a plurality of third contact elements arranged on top of the semiconductor die; a plurality of ball bumps or a loaf bump disposed on each of the plurality of second elements and the plurality of third elements; and at least one ball bump or loaf on the at least one first contact element. | 05-24-2012 |
20120129305 | METHOD FOR MANUFACTURING A MOS-FIELD EFFECT TRANSISTOR - A method for manufacturing a Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) has the step of implanting a base region of said MOSFET within an epitaxial layer of a semiconductor chip comprising an insulated gate structure used as a masking element, wherein the implant beam is angled with respect to a vertical axis of the semiconductor chip such that the base region extends sufficiently under the gate to form a Power-MOSFET. | 05-24-2012 |
20130026545 | MULTIPLE WELL DRAIN ENGINEERING FOR HV MOS DEVICES - At least one N-well implant having a different doping level is formed in a silicon substrate by first etching the substrate with an alignment target for aligning future process masks thereto. This alignment target is outside of any active device area. By using at least one N-well implant having a different doping level in combination with the substrate, a graded junction in the drift area of a metal oxide semiconductor (MOS) field effect transistor (FET) can be created and a pseudo Ldd structure may be realized thereby. | 01-31-2013 |
20130154017 | Self-Aligned Gate Structure for Field Effect Transistor - A field effect transistor has a substrate with an epitaxial layer, base regions extending from a top of the epitaxial layer into the epitaxial layer, an insulation region having side walls and extending between two base regions on top of the substrate; and a polysilicon gate structure covering the insulation region including the side walls, wherein effective gates are formed by a portion of the polysilicon covering side walls above the base region. | 06-20-2013 |
20130314263 | Digital-to-Analog-Converter with Resistor Ladder - A digital-to analog-converter (DAC) has a MSB resistor ladder with a plurality of series connected resistors, wherein the MSB resistor ladder is coupled between a first and second reference potential, a LSB resistor ladder with a plurality of series connected resistors, and a plurality of switching units for connecting one of the series connected resistors of the MSB resistor ladder with the LSB resistor ladder, wherein each switching unit has a first switch for connecting a first terminal of an associated MSB resistor with a first terminal of the LSB resistor ladder and a second switch for connecting a second terminal of the associated MSB resistor with a second terminal of the LSB resistor ladder and wherein each switch is configured form a resistor of similar value of the resistors of the LSB resistor ladder when switched on. | 11-28-2013 |
20140246722 | Power MOS Transistor with Improved Metal Contact - A power MOS field effect transistor (FET) has a plurality of transistor cells, each cell having a source region and a drain region to be contacted through a surface of a silicon wafer die. A first dielectric layer is disposed on the surface of the silicon wafer die and a plurality of grooves are formed in the first dielectric layer above the source regions and drain regions, respectively and filled with a conductive material. A second dielectric layer is disposed on a surface of the first dielectric layer and has openings to expose contact areas to said grooves. A metal layer is disposed on a surface of the second dielectric layer and filling the openings, wherein the metal layer is patterned and etched to form separate metal wires connecting each drain region and each source region of the plurality of transistor cells, respectively through the grooves. | 09-04-2014 |
20140252551 | Method and Apparatus for Constructing an Isolation Capacitor in an Integrated Circuit - At least one high voltage rated isolation capacitor is formed on a face of a primary integrated circuit die. The isolation capacitor AC couples the primary integrated circuit in a first voltage domain to a second integrated circuit in a second voltage domain. The isolation capacitor DC isolates the primary integrated circuit from the second integrated circuit die. | 09-11-2014 |
20140253218 | Multi-Gate Field Effect Transistor - An improved field effect transistor (FET) is provided by segmenting the gates of a power FET wherein a controller can “decide” how much of the FET to use, thus increasing efficiency. | 09-11-2014 |
20140253227 | Integrated High Voltage Isolation Using Low Value Capacitors - High voltage rated isolation capacitors are formed on a face of a primary integrated circuit die. The isolation capacitors AC couple the primary integrated circuit in a first voltage domain to a second integrated circuit in a second voltage domain. The isolation capacitors DC isolate the primary integrated circuit from the second integrated circuit die. Isolated power transfer from the first voltage domain to the second voltage domain is provided through the high voltage rated isolation capacitors with an AC oscillator or PWM generator. The AC oscillator voltage amplitude may be increased for an increase in power through the high voltage rated isolation capacitors, and a larger value capacitor in the second voltage domain may provide for peak current demand from circuits in the second voltage domain. | 09-11-2014 |
20140264796 | Insulated Bump Bonding - A semiconductor power chip, may have a semiconductor die having a power device fabricated on a substrate thereof, wherein the power device has at least one first contact element, a plurality of second contact elements and a plurality of third contact elements arranged on top of the semiconductor die; and an insulation layer disposed on top of the semiconductor die and being patterned to provide openings to access the plurality of second and third contact elements and the at least one first contact element. | 09-18-2014 |
Patent application number | Description | Published |
20140252741 | VEHICLE FRONT SUSPENSION - A vehicle front suspension includes a lower suspension support structure, a transverse link, a steering knuckle and a lower knuckle breakaway structure. The transverse link has an inboard side and an outboard side, with the inboard side being attached to the lower suspension support structure. The steering knuckle is pivotally coupled to the outboard side of the transverse link. The lower knuckle breakaway structure is formed on one of the transverse link and the steering knuckle to release the steering knuckle from the transverse link upon application of a prescribed rearward directed force on the vehicle front suspension outboard of the lower suspension support structure. | 09-11-2014 |
20140252742 | VEHICLE FRONT SUSPENSION - A vehicle front suspension includes a suspension support structure, a transverse link, a front link breakaway structure and a rear link breakaway structure. The transverse link has an inboard side with a front connection structure connecting a front end of the transverse link to the suspension support at a first location and a rear connection structure pivotally connecting a rear end of the transverse link to the suspension support at a second location that is spaced rearwardly of the first location. The front link breakaway structure is configured to release the front end of the transverse link from the suspension support upon application of a prescribed rearward directed force on the vehicle front suspension outboard of the suspension support structure. The rear link breakaway structure is configured to release the rear connection structure of the transverse link from the suspension support upon rearward rotation of the transverse link about the rear connection structure. | 09-11-2014 |
20140291956 | VEHICLE FRONT SUSPENSION - A vehicle front suspension includes a lower suspension support structure, a transverse link, a steering knuckle and a lower knuckle breakaway structure. The transverse link has an inboard side and an outboard side, the inboard side being attached to the lower suspension support structure. The steering knuckle has an upper end, a lower end, and a wheel supporting section between the upper end and the lower end. The lower end is pivotally coupled to the outboard side of the transverse link. The lower knuckle breakaway structure is formed on the steering knuckle to release the steering knuckle from the transverse link upon application of a prescribed rearward directed force on the vehicle front suspension outboard of the lower suspension support structure. | 10-02-2014 |
20140346758 | VEHICLE BODY STRUCTURE - A vehicle body structure includes a pillar, a roof rail, a pillar trim panel mounted to the pillar, a pillar airbag and a curtain airbag. The pillar airbag is mounted to the pillar in a stowed orientation between the pillar trim panel and the pillar. The pillar airbag is arranged to be deployed in a first direction extending away from the pillar in a deployed orientation. The curtain airbag is mounted to the roof rail in a stowed orientation along the roof rail, and is arranged to be deployed in a downward direction extending away from the roof rail to a deployed orientation. The pillar airbag is positioned outboard of the curtain airbag with the curtain airbag overlaying a portion of the pillar airbag with respect to a second direction transverse to the first direction while the pillar airbag and the curtain airbag are in their deployed orientations, respectively. | 11-27-2014 |
20150130172 | VEHICLE BODY STRUCTURE - A vehicle body structure includes a pillar, a roof rail, a pillar trim panel mounted to the pillar, a pillar airbag and a curtain airbag. The pillar airbag is mounted to the pillar in a stowed orientation between the pillar trim panel and the pillar. The pillar airbag is arranged to be deployed in a first direction extending away from the pillar in a deployed orientation. The curtain airbag is mounted to the roof rail in a stowed orientation along the roof rail, and is arranged to be deployed in a downward direction extending away from the roof rail to a deployed orientation. The pillar airbag is positioned outboard of the curtain airbag with the curtain airbag overlaying a portion of the pillar airbag with respect to a second direction transverse to the first direction while the pillar airbag and the curtain airbag are in their deployed orientations, respectively. | 05-14-2015 |
Patent application number | Description | Published |
20080221807 | PRESSURE MONITORING SYSTEM - Monitoring pressurized fluid containers through use of a container site subsystem and a system hub. The container site subsystem including sensor(s) to sense a characteristic associated with a pressurized fluid container; and a container site hub to receive, from each sensor, raw data corresponding to the sensed characteristic. The system hub receives the aggregated raw data from the container site hub, and converts the raw data to process values. | 09-11-2008 |
20080221808 | PRESSURE MONITORING SYSTEM - Monitoring pressurized fluid containers through use of a container site subsystem and a system hub. The container site subsystem including sensor(s) to sense a characteristic associated with a pressurized fluid container; and a container site hub to receive, from each sensor, raw data corresponding to the sensed characteristic. The system hub receives the aggregated raw data from the container site hub, and converts the raw data to process values. | 09-11-2008 |
20080221809 | PRESSURE MONITORING SYSTEM - Monitoring pressurized fluid containers through use of a container site subsystem and a system hub. The container site subsystem including sensor(s) to sense a characteristic associated with a pressurized fluid container; and a container site hub to receive, from each sensor, raw data corresponding to the sensed characteristic. The system hub receives the aggregated raw data from the container site hub, and converts the raw data to process values. | 09-11-2008 |
Patent application number | Description | Published |
20130303645 | METHOD OF FORMING POLYMERIC FOAM AND RELATED FOAM ARTICLES - Methods of forming polymeric foams are provided. The methods may involve co-extruding a foam layer along with one or more skin layers. In some embodiments, the skin layer(s) may be removed (e.g., in a peeling operation); while, in other embodiments, the skin layer(s) may form part of the final article. The methods are particularly well suited for producing polymeric foams from polymeric materials that are considered to be difficult to foam by those of skill in the art. | 11-14-2013 |
20160089852 | MULTI-LAYER THERMOFORMED POLYMERIC FOAM ARTICLES AND METHODS - Thermoformed polymeric foam articles and methods of forming the same are described. In some embodiments, thermoformed articles are produced from multi-layer foamed sheet where the formed article has a density equal to or less than the precursor multi-layer sheet. One of the layers of the thermoformed article may be a polymer foam layer having a density reduction between 5% and 50% as compared to the solid polymer. Such polymer foam layers can be referred to as “medium density” or “high density” foams. Advantageously, the methods described herein are practical for commercial use and, for example, can be used to produce a variety of thermoformed articles suitable for use in many different applications. | 03-31-2016 |
20160090458 | THERMOFORMED POLYMERIC FOAM ARTICLES AND METHODS - Thermoformed polymeric foam articles are described herein In some embodiments, the articles are made by a manufacturing method (e.g., a continuous process) which involves the extrusion and subsequent thermoforming of a blowing agent containing thermoplastic sheet. The thermoformed polymeric foam articles may have a lower density than the precursor sheet from which they are formed. In some but not all embodiments, the precursor sheet is a multi-layer sheet which includes at least one foam layer. In such embodiments, the thermoformed articles also include multiple layers and at least one foam layer. | 03-31-2016 |