Patent application number | Description | Published |
20090231707 | OPTICAL ARRANGEMENT, IN PARTICULAR PROJECTION EXPOSURE APPARATUS FOR EUV LITHOGRAPHY, AS WELL AS REFLECTIVE OPTICAL ELEMENT WITH REDUCED CONTAMINATION - An optical arrangement, in particular a projection exposure apparatus ( | 09-17-2009 |
20090314931 | METHOD FOR REMOVING CONTAMINATION ON OPTICAL SURFACES AND OPTICAL ARRANGEMENT - A method and an optical arrangement for removing contamination on optical surfaces ( | 12-24-2009 |
20100034349 | METHOD FOR CLEANING AN EUV LITHOGRAPHY DEVICE, METHOD FOR MEASURING THE RESIDUAL GAS ATMOSPHERE AND THE CONTAMINATION AND EUV LITHOGRAPHY DEVICE - Components ( | 02-11-2010 |
20100045948 | EUV LITHOGRAPHY APPARATUS AND METHOD FOR DETERMINING THE CONTAMINATION STATUS OF AN EUV-REFLECTIVE OPTICAL SURFACE - The invention relates to an EUV lithography apparatus with at least one EUV-reflective optical surface and a cavity ringdown reflectometer adapted to determine the contamination status of the EUV-reflective optical surface for at least one contaminating substance by determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm). The invention further relates to a method for determining the contamination status of at least one EUV-reflective optical surface arranged in an EUV lithography apparatus for at least one contaminating substance comprising determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm) using a cavity ringdown reflectometer. | 02-25-2010 |
20100071720 | METHOD AND SYSTEM FOR REMOVING CONTAMINANTS FROM A SURFACE - Inside a vacuum chamber | 03-25-2010 |
20100112494 | APPARATUS AND METHOD FOR MEASURING THE OUTGASSING AND EUV LITHOGRAPHY APPARATUS - An apparatus and method for measuring an outgassing in a EUV lithography apparatus. The method includes activating a surface within the EUV lithography apparatus, inducing the outgassing, analyzing a residual gas. Defining a maximum partial pressure, recording a mass spectrum of the residual gas, converting the highest-intensity peaks of the mass spectrum into sub-partial pressures, summing the sub-partial pressures, and comparing the summed result with the defined maximum partial pressure. An EUV lithography apparatus includes a residual gas analyzer and a stimulation unit comprised of at least on of an electron source, an ion source, a photon source, and a plasma source. A measurement setup for measuring the outgassing from components by analyzing the residual gas includes a residual gas analyzer, a vacuum chamber, and a stimulation unit comprised of at least on of an electron source, an ion source, a photon source, and a plasma source. | 05-06-2010 |
20100231877 | OPTICAL ELEMENT WITH AT LEAST ONE ELECTRICALLY CONDUCTIVE REGION, AND ILLUMINATION SYSTEM WITH THE OPTICAL ELEMENT - An optical element includes first regions which reflect or transmit the light falling on the optical element. The optical element also includes second regions which are in each instance separated by a distance from a first region and which at least partially surround a first region. The second regions are designed to be at least in part electrically conductive and are electrically insulated from the first regions. The optical element includes a carrier element and at least two first regions in the form of mirror facets which are arranged on the carrier element. The second regions are arranged with a separation from the mirror facets on the carrier element and are electrically insulated against the carrier element as well as against the mirror facet. At least one mirror facet is surrounded by an electrically conductive second region. | 09-16-2010 |
20100261120 | MIRROR FOR GUIDING A RADIATION BUNDLE - A mirror serves for guiding a radiation bundle. The mirror has a basic body and a coating of a reflective surface of the basic body, the coating increasing the reflectivity of the mirror. A heat dissipating device serves for dissipating heat deposited in the coating. The heat dissipating device has at least one Peltier element. The coating is applied directly on the Peltier element. A temperature setting apparatus has at least one temperature sensor for a temperature of the reflective surface. A regulating device of the Temperature setting apparatus can be connected to the at least one Peltier element and is signal-connected to the at least one temperature sensor. The result is a mirror in which a heat dissipating capacity of the heat dissipating device is improved. | 10-14-2010 |
20100288302 | Method for removing a contamination layer from an optical surface and arrangement therefor as well as a method for generating a cleaning gas and arrangement therefor - The invention is directed to a method for at least partially removing a contamination layer ( | 11-18-2010 |
20110043774 | CLEANING MODULE, EUV LITHOGRAPHY DEVICE AND METHOD FOR THE CLEANING THEREOF - In order to clean optical components ( | 02-24-2011 |
20110058147 | CLEANING MODULE AND EUV LITHOGRAPHY DEVICE WITH CLEANING MODULE - A cleaning module for an EUV lithography device with a supply ( | 03-10-2011 |
20110188011 | PARTICLE CLEANING OF OPTICAL ELEMENTS FOR MICROLITHOGRAPHY - An optical assembly is mounted in a projection exposure apparatus ( | 08-04-2011 |
20110211179 | DETECTION OF CONTAMINATING SUBSTANCES IN AN EUV LITHOGRAPHY APPARATUS - An EUV (extreme ultraviolet) lithography apparatus ( | 09-01-2011 |
20110216298 | PROTECTION MODULE FOR EUV LITHOGRAPHY APPARATUS, AND EUV LITHOGRAPHY APPARATUS - In EUV lithography apparatuses ( | 09-08-2011 |
20110279799 | EUV Lithography Device and Method For Processing An Optical Element - An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device ( | 11-17-2011 |
20120200913 | REFLECTIVE OPTICAL ELEMENT AND METHOD OF PRODUCING IT - In order to limit the negative effect of metal contamination on reflectivity within an EUV lithography device, a reflective optical element is proposed for the extreme ultraviolet and soft X-ray wavelength range with a reflective surface with an uppermost layer, in which the uppermost layer comprises one or more organic silicon compounds with a carbon-silicon and/or silicon-oxygen bond. | 08-09-2012 |
20120224153 | OPTICAL ARRANGEMENT, IN PARTICULAR IN A PROJECTION EXPOSURE APPARATUS FOR EUV LITHOGRAPHY - An optical arrangement, in particular in a projection exposure apparatus for EUV lithography. In an aspect an optical arrangement has a housing ( | 09-06-2012 |
20120250144 | REFLECTIVE OPTICAL ELEMENT AND METHOD FOR OPERATING AN EUV LITHOGRAPHY APPARATUS - In order to reduce the adverse influence of contamination composed of silicon dioxide, hydrocarbons and/or metals within an EUV lithography apparatus on the reflectivity, a reflective optical element ( | 10-04-2012 |
20120281196 | PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - A projection lens of a projection exposure apparatus, for imaging a mask which can be positioned in an object plane onto a light-sensitive layer which can be positioned in an image plane, includes a housing, in which at least one optical element is arranged, at least one partial housing which is arranged within said housing and which at least regionally surrounds light passing from the object plane as far as the image plane during the operation of the projection lens, and a reflective structure, which reduces a light proportion which reaches the image plane after reflection at the at least one partial housing, by comparison with an analogous arrangement without said reflective structure. | 11-08-2012 |
20120300184 | SURFACE CORRECTION ON COATED MIRRORS | 11-29-2012 |
20130077064 | ARRANGEMENT FOR USE IN A PROJECTION EXPOSURE TOOL FOR MICROLITHOGRAPHY HAVING A REFLECTIVE OPTICAL ELEMENT - An arrangement for use in a projection exposure tool ( | 03-28-2013 |
20130099132 | OPTICAL SYSTEM FOR EUV LITHOGRAPHY WITH A CHARGED-PARTICLE SOURCE - To prevent reflective optical elements ( | 04-25-2013 |
20130148200 | OPTICAL ARRANGEMENT, IN PARTICULAR PROJECTION EXPOSURE APPARATUS FOR EUV LITHOGRAPHY, AS WELL AS REFLECTIVE OPTICAL ELEMENT WITH REDUCED CONTAMINATION - An optical arrangement, e.g. a projection exposure apparatus ( | 06-13-2013 |
20130176545 | PROJECTION EXPOSURE APPARATUS - A projection exposure apparatus for semiconductor lithography includes optical elements, wherein at least one of the optical elements includes a mechanism for contactlessly producing electric currents in the optical element to heat the at least one optical element at least in regions. | 07-11-2013 |
20130186430 | METHOD FOR REMOVING A CONTAMINATION LAYER FROM AN OPTICAL SURFACE AND ARRANGEMENT THEREFOR - The invention is directed to a method for at least partially removing a contamination layer ( | 07-25-2013 |
20140028989 | EUV LITHOGRAPHY APPARATUS AND METHOD FOR DETECTING PARTICLES IN AN EUV LITHOGRAPHY APPARATUS - An EUV lithography apparatus ( | 01-30-2014 |
20140078481 | METHOD FOR CORRECTING THE SURFACE FORM OF A MIRROR - A method for correcting a surface form of a mirror ( | 03-20-2014 |
20140176921 | OPTICAL ASSEMBLY WITH SUPPRESSION OF DEGRADATION - An optical assembly including: a beam generating system generating radiation ( | 06-26-2014 |
20140199543 | REFLECTIVE OPTICAL ELEMENT AND OPTICAL SYSTEM FOR EUV LITHOGRAPHY - In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element ( | 07-17-2014 |
20140211178 | METHOD FOR PRODUCING A CAPPING LAYER COMPOSED OF SILICON OXIDE ON AN EUV MIRROR, EUV MIRROR, AND EUV LITHOGRAPHY APPARATUS - A method for producing a capping layer ( | 07-31-2014 |
20140211179 | EUV MIRROR COMPRISING AN OXYNITRIDE CAPPING LAYER HAVING A STABLE COMPOSITION, EUV LITHOGRAPHY APPARATUS, AND OPERATING METHOD | 07-31-2014 |