Patent application number | Description | Published |
20110290659 | COMPOSITION FOR METAL ELECTROPLATING COMPRISING LEVELING AGENT - A composition comprising a source of metal ions and at least one leveling agent obtainable by condensing at least one trialkanolamine of the general formula N(R | 12-01-2011 |
20120018310 | COMPOSITION FOR METAL PLATING COMPRISING SUPPRESSING AGENT FOR VOID FREE SUBMICRON FEATURE FILLING - Composition comprising a source of metal ions and at least one suppressing agent obtainable by reacting a) an amine compound comprising at least three active amino functional groups with b) a mixture of ethylene oxide and at least one compound selected from C3 and C4 alkylene oxides. | 01-26-2012 |
20120024711 | COMPOSITION FOR METAL PLATING COMPRISING SUPPRESSING AGENT FOR VOID FREE SUBMICRON FEATURE FILLING - A composition for filling submicrometer sized features having an aperture size of 30 nanometers or less comprising a source of copper ions, and at least one suppressing agent selected from compounds of formula (I) wherein the R1 radicals are each independently selected from a copolymer of ethylene oxide and at least one further C3 to C4 alkylene oxide, said copolymer being a random copolymer. the R2 radicals are each independently selected from R1 or alkyl. X and Y are spacer groups independently, and X for each repeating unit independently, selected from C1 to C6 alkylen and Z—(O—Z)m wherein the Z radicals are each independently selected from C2 to C6 alkylen, n is an integer equal to or greater than 0. m is an integer equal to or greater than 1. | 02-02-2012 |
20120027948 | COMPOSITION FOR METAL PLATING COMPRISING SUPPRESSING AGENT FOR VOID FREE SUBMICRON FEATURE FILLING - A composition comprising a source of metal ions and at least one suppressing agent obtainable by reacting a) an amine compound comprising active amino functional groups with b) a mixture of ethylene oxide and at least one compound selected from C3 and C4 alkylene oxides, said suppressing agent having a molecular weight M | 02-02-2012 |
20120118750 | COMPOSITION FOR METAL PLATING COMPRISING SUPPRESSING AGENT FOR VOID FREE SUBMICRON FEATURE FILLING - A composition comprising at least one source of metal ions and at least one additive obtainable by reacting a poly-hydric alcohol comprising at least 5 hydroxyl functional groups with at least a first alkylene oxide and a second alkylene oxide from a mixture of the first alkylene oxide and the second alkylene oxide or a third alkylene oxide, a second alkylene oxide, and a first alkylene oxide in aforesaid sequence, the third alkylene oxide having a longer alkyl chain than the second alkylene oxide and the second alkylene oxide having a longer alkyl chain than the first alkylene oxide. | 05-17-2012 |
20120128888 | COMPOSITION FOR METAL PLATING COMPRISING SUPPRESSING AGENT FOR VOID FREE SUBMICRON FEATURE FILLING - According to the present invention a composition is provided comprising at least one source of metal ions and at least one additive obtainable by reacting a) a polyhydric alcohol condensate compound derived from at least one polyalcohol of formula (I) X(OH) | 05-24-2012 |
20120292193 | COMPOSITION FOR METAL ELECTROPLATING COMPRISING LEVELING AGENT - A composition comprising a source of metal ions and at least one additive comprising at least one polyaminoamide represented by formula (I) or derivatives of a polyaminoamide of formula (I) obtainable by complete or partial protonation, N-quarternisation or acylation. | 11-22-2012 |
20130020203 | COMPOSITION FOR METAL ELECTROPLATING COMPRISING LEVELING AGENT - A composition comprising a source of metal ions and at least one additive comprising a polyalkyleneimine backbone, said polyalkyleneimine backbone having a molecular weight Mw of from 300 g/mol to 1000000 g/mol, wherein the N hydrogen atoms in the backbone are substituted by a polyoxyalkylene radical and wherein the average number of oxyalkylene units in said polyoxyalkylene radical is from 1.5 to 10 per N—H unit. | 01-24-2013 |
20130068626 | COMPOSITION FOR METAL ELECTROPLATING COMPRISING LEVELING AGENT - A composition comprising a source of metal ions and at least one leveling agent comprising a linear or branched, polymeric imidazolium compound comprising the structural unit of formula L1 (L1) wherein R | 03-21-2013 |
20130264213 | COMPOSITION FOR METAL ELECTROPLATING COMPRISING LEVELING AGENT - Disclosed is a composition comprising a source of metal ions, one or more suppressing agents and at least one additive comprising a linear or branched, polymeric biguanide compound comprising the structural unit of formula L1 or the corresponding salt thereof, wherein R | 10-10-2013 |
20130288484 | USE OF SURFACTANTS HAVING AT LEAST THREE SHORT-CHAIN PERFLUORINATED GROUPS RF FOR MANUFACTURING INTEGRATED CIRCUITS HAVING PATTERNS WITH LINE-SPACE DIMENSIONS BELOW 50 NM - The use of surfactants A, the 1% by weight aqueous solutions of which exhibit a static surface tension <25 mN/m, the said surfactants A containing at least three short-chain perfluorinated groups Rf selected from the group consisting of trifluoromethyl, pentafluoroethyl, 1-heptafluoropropyl, 2-heptafluoropropyl, heptafluoroisopropyl, and pentafluorosulfanyl; for manufacturing integrated circuits comprising patterns having line-space dimensions below 50 nm and aspect ratios >3; and a photolithographic process making use of the surfactants A in immersion photoresist layers, photoresist layers exposed to actinic radiation, developer solutions for the exposed photoresist layers and/or in chemical rinse solutions for developed patterned photoresists comprising patterns having line-space dimensions below 50 nm and aspect ratios >3. By way of the surfactants A, pattern collapse is prevented, line edge roughness is reduced, watermark defects are prevented and removed and defects are reduced by removing particles. | 10-31-2013 |
20140097092 | COMPOSITION FOR METAL ELECTROPLATING COMPRISING AN ADDITIVE FOR BOTTOM-UP FILLING OF THOUGH SILICON VIAS AND INTERCONNECT FEATURES - A composition comprising a source of metal ions and at least one polyaminoamide, said polyaminoamide comprising amide and amine functional groups in the polymeric backbone and aromatic moieties attached to or located within said polymeric backbone. | 04-10-2014 |