Patent application number | Description | Published |
20090194787 | VERTICAL OUTGASSING CHANNELS - InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H | 08-06-2009 |
20120119258 | VERTICAL OUTGASSING CHANNELS - InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H | 05-17-2012 |
20140159210 | VERTICAL OUTGASSING CHANNELS - InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H | 06-12-2014 |
20140204967 | Thermal Shunt - A thermal shunt is to transfer heat from a sidewall of a device to a silicon substrate. The device is associated with a Silicon-On-Insulator (SOI) including a buried oxide layer. The thermal shunt extends through the buried oxide layer to the silicon substrate. | 07-24-2014 |
20140264723 | DEVICES INCLUDING A DIAMOND LAYER - A device includes a substrate layer, a diamond layer, and a device layer. The device layer is patterned. The diamond layer is to conform to a pattern associated with the device layer. | 09-18-2014 |
20140314109 | DIRECT MODULATED LASER - A laser system can include an electrode to transmit electrical carriers into an active region in response to first electrical stimulation. The laser system can also include another electrode to transmit electrical carriers into the active region in response to second electrical stimulation. The electrical carriers can be combined in the active region to emit photons to generate an optical signal. The system can further include yet another electrode responsive to electrical stimulation to affect a concentration of electrical carriers in a device layer to change a capacitance of an internal capacitance region associated with at least one of first and second waveguide regions and the device layer. The third electrical stimulation can be modulated to modulate the optical signal based on the change to the capacitance of the internal capacitance region. | 10-23-2014 |
20140362374 | ANALYZING LIGHT BY MODE INTERFERENCE - Apparatuses and systems for analyzing light by mode interference are provided. An example of an apparatus for analyzing light by mode interference includes a number of waveguides to support in a multimode region two modes of the light of a particular polarization and a plurality of scattering objects offset from a center of at least one of the number of waveguides. | 12-11-2014 |
20150010035 | UNIDIRECTIONAL RING LASERS - A laser includes an active ring, a passive waveguide, and a reflector. The active ring is to generate light. The passive waveguide is associated with the active ring to capture generated light. The reflector is associated with the passive waveguide to cause captured light from the waveguide to be coupled into the active ring to trigger domination of unidirectional lasing in the active ring to generate light. | 01-08-2015 |
20150055910 | HYBRID MOS OPTICAL MODULATOR - A hybrid MOS optical modulator. The optical modulator includes an optical waveguide, a cathode comprising a first material and formed in the optical waveguide, and an anode comprising a second material dissimilar from the first material and formed in the optical waveguide, the anode adjoining the cathode, a capacitor being defined between the anode and the cathode. | 02-26-2015 |