Destefanis
Gerard Destefanis, Saint Egreve FR
Patent application number | Description | Published |
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20110156194 | PHOTODETECTOR WITH A PLASMONIC STRUCTURE - This photodetector comprises a doped semiconductor layer; a reflective layer located underneath semiconductor layer; a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface plasmon resonator, a plurality of semiconductor zones formed in semiconductor layer and oppositely doped to the doping of the semiconductor layer; and for each semiconductor zone, a conductor that passes through the photodetector from reflective layer to at least semiconductor zone and is electrically insulated from metallic structure, with semiconductor zone associated with corresponding conductor thus determining an elementary detection surface of the photodetector. | 06-30-2011 |
20140312446 | SEMICONDUCTOR STRUCTURE ABLE TO RECEIVE ELECTROMAGNETIC RADIATION, SEMICONDUCTOR COMPONENT AND PROCESS FOR FABRICATING SUCH A SEMICONDUCTOR STRUCTURE - A semiconducting structure configured to receive electromagnetic radiation and transform the received electromagnetic radiation into an electric signal, the semiconductor structure including a semiconducting support within a first surface defining a longitudinal plane, a first zone with a first type of conductivity formed in the support with a second zone with a second type of conductivity that is opposite of the first type of conductivity to form a semiconducting junction. A mechanism limiting lateral current includes a third zone formed in the support in lateral contact with the second zone, the third zone having the second type of conductivity for which majority carriers are electrons. The third zone has a sufficient concentration of majority carriers to have an increase in an apparent gap due to a Moss-Burstein effect. | 10-23-2014 |
GĂ©rard Destefanis, Saint Egreve FR
Patent application number | Description | Published |
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20110156189 | PHOTODETECTOR WITH A PLASMONIC STRUCTURE - This photodetector capable of detecting electromagnetic radiation comprises: | 06-30-2011 |
Vincent Destefanis, Grenoble FR
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20100099233 | METHOD FOR PRODUCING STACKED AND SELF-ALIGNED COMPONENTS ON A SUBSTRATE - The invention relates to a method for producing stacked and self-aligned components on a substrate, comprising the following steps: | 04-22-2010 |
Vincent Destefanis, Saint Egreve FR
Patent application number | Description | Published |
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20100068869 | METHOD FOR FABRICATING A MICRO-ELECTRONIC DEVICE EQUIPPED WITH SEMI-CONDUCTOR ZONES ON AN INSULATOR WITH A HORIZONTAL GE CONCENTRATION GRADIENT - A method for the realization of a microelectronic device which includes at least one semi-conductor zone which rests on a support and which exhibits a Germanium concentration gradient in a direction parallel to the principal plane of the support, | 03-18-2010 |
20140024203 | SHALLOW HEAVILY DOPED SEMICONDUCTOR LAYER BY CYCLIC SELECTIVE EPITAXIAL DEPOSITION PROCESS - The deposition method comprises providing a substrate with a first mono-crystalline zone made of a semiconductor material and a second zone made of an insulating material. During a passivation step, a passivation atmosphere is applied on the substrate so as to cover the first zone with doping impurities. During a deposition step, gaseous silicon and/or germanium precursors are introduced and a doped semiconductor film is formed. The semiconductor film is mono-crystalline over the first zone and has a different texture over the second zone. During an etching step, a chloride gaseous precursor is applied on the substrate so as to remove the semiconductor layer over the second zone. | 01-23-2014 |