Patent application number | Description | Published |
20090242897 | INDIUM GALLIUM NITRIDE-BASED OHMIC CONTACT LAYERS FOR GALLIUM NITRIDE-BASED DEVICES - Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided directly on the outer layer. A reflective metal layer or a transparent conductive oxide layer is provided directly on the indium gallium nitride layer opposite the outer layer. The indium gallium nitride layer forms a direct ohmic contact with the outer layer. An ohmic metal layer need not be used. Related fabrication methods are also disclosed. | 10-01-2009 |
20090261358 | EMISSION TUNING METHODS AND DEVICES FABRICATED UTILIZING METHODS - A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs. | 10-22-2009 |
20100101495 | Restricted Radiated Heating Assembly for High Temperature Processing - A vapor deposition reactor and associated method are disclosed that increase the lifetime and productivity of a filament-based resistive-heated vapor deposition system. The reactor and method provide for heating the filament while permitting the filament to move as it expands under the effect of increasing temperature while limiting the expanding movement of the filament to an amount that prevents the expanding movement of the filament from creating undesired contact with any portions of the reactor. | 04-29-2010 |
20100140633 | Methods for Combining Light Emitting Devices in a Package and Packages Including Combined Light Emitting Devices - Methods of forming a light emitting device package assembly include defining a chromaticity region in a two dimensional chromaticity space, and subdividing the defined chromaticity region into at least three chromaticity subregions, providing a plurality of light emitting devices that emit light having a chromaticity that falls within at least one of the defined chromaticity subregions, selecting at least three of the plurality of light emitting devices, each of the three light emitting devices emits light from a different one of the chromaticity subregions, and mounting the selected light emitting devices on a light emitting device package body. | 06-10-2010 |
20100270567 | LIGHTING DEVICE - A light emission package includes multiple colored solid state emitters each having a different non-white dominant wavelength in the visible range, and at least one lumiphor arranged to receive emissions from at least one other solid state emitter, with each emitter arranged on or adjacent to a common submount. The at least one other emitter and lumiphor may be arranged in combination to emit white light. Each emitter is independently controllable, permitting color and/or color temperature of a lighting device to be varied during operation of the device. At least one white emitter may be combined with red, green, and blue LEDs. | 10-28-2010 |
20100314640 | INDIUM GALLIUM NITRIDE-BASED OHMIC CONTACT LAYERS FOR GALLIUM NITRIDE-BASED DEVICES - Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided directly on the outer layer. A reflective metal layer or a transparent conductive oxide layer is provided directly on the indium gallium nitride layer opposite the outer layer. The indium gallium nitride layer forms a direct ohmic contact with the outer layer. An ohmic metal layer need not be used. Related fabrication methods are also disclosed. | 12-16-2010 |
20110037080 | METHODS FOR COMBINING LIGHT EMITTING DEVICES IN A PACKAGE AND PACKAGES INCLUDING COMBINED LIGHT EMITTING DEVICES - Methods of forming a light emitting device package assembly include defining a chromaticity region in a two dimensional chromaticity space within a 10-step MacAdam ellipse of a target chromaticity point, and subdividing the defined chromaticity region into at least three chromaticity subregions, providing a plurality of light emitting devices that emit light having a chromaticity that falls within the defined chromaticity region, selecting at least three of the plurality of light emitting devices, wherein each of the three light emitting devices emits light from a different one of the chromaticity subregions. The at least three light emitting devices are selected from chromaticity subregions that are complementary relative to the target chromaticity point to at least one other chromaticity subregion from which a light emitting device is selected. | 02-17-2011 |
20110042698 | EMITTER PACKAGE WITH ANGLED OR VERTICAL LED - The present invention is directed to LED packages and LED displays utilizing the LED packages, wherein the LED chips within the packages are arranged in unique orientations to provide the desired package or display FFP. One LED package according to the present invention comprises a reflective cup and an LED chip mounted in the reflective cup. The reflective cup has a first axis and a second axis orthogonal to the first axis, wherein the LED chip is rotated within the reflective cup so that the LED chip is out of alignment with said first axis. Some of the LED packages can comprise a rectangular LED chip having a chip longitudinal axis and an oval shaped reflective cup having a cup longitudinal axis. The LED chip is mounted within the reflective cup with the chip longitudinal axis angled from the cup longitudinal axis. LED displays according to the present invention comprise a plurality of LED packages, at least some of which have an LED chip mounted in a reflective cup at different angles to achieve the desired display FFP. | 02-24-2011 |
20110083602 | Multi-Rotation Epitaxial Growth Apparatus and Reactors Incorporating Same - A susceptor apparatus for use in a CVD reactor includes a main platter with a central gear. The main platter has opposite first and second sides, a central recess formed in the second side, and a plurality of circumferentially spaced-apart pockets formed in the first side. The central gear is positioned within the central recess and the satellite platters are individually rotatable within the respective pockets. Each pocket has a peripheral wall with an opening in communication with the central recess. The central gear teeth extend into each of the pockets via the respective wall openings and engage a planet gear associated with each satellite platter. Rotation of the main platter about its rotational axis causes the satellite platters to rotate about their individual rotational axes. | 04-14-2011 |
20120104427 | MINIATURE SURFACE MOUNT DEVICE WITH LARGE PIN PADS - One embodiment of the surface mount LED package includes a lead frame and a plastic casing at least partially encasing the lead frame. The lead frame includes a plurality of electrically conductive chip carriers. There is an LED disposed on each one of the plurality of electrically conductive chip carriers. A profile height of the surface mount LED package is less than about 1.0 mm. | 05-03-2012 |
20120119230 | LED DEVICE HAVING A TILTED PEAK EMISSION AND AN LED DISPLAY INCLUDING SUCH DEVICES - An LED package and a lead frame include a reflector cup having a bottom surface with an LED asymmetrically positioned on the bottom surface and a wall surface inclined relative to the bottom surface and defining an opening at an upper end thereof. The bottom surface of the reflector cup has a first axial dimension along a first axis and a second axial dimension along a second axis, orthogonal to the first axis. A display having an asymmetrical FFP and asymmetrical screen curve includes an array of the LED modules including a plurality of LED packages. At least some of the LED packages include a dome-shaped lens asymmetrically positioned with respect to a geometric center of the bottom surface of the reflector cup. | 05-17-2012 |
20120120118 | LED DEVICES WITH NARROW VIEWING ANGLE AND AN LED DISPLAY INCLUDING SAME - LED devices includes a lead frame having a reflector cup with a round bottom surface and a wall surface having a variable inclination with respect to the bottom surface and defining an opening at an upper end thereof. An LED is mounted on the bottom surface of the reflector cup, and an LED module includes first and second LED device that emit different colors. The first and second LED devices have substantially matched far field patterns in a first and second direction, where a first viewing angle in the first direction is less than about 99°. | 05-17-2012 |
20120126260 | HIGH EFFICACY SEMICONDUCTOR LIGHT EMITTING DEVICES EMPLOYING REMOTE PHOSPHOR CONFIGURATIONS - A semiconductor light emitting apparatus a semiconductor light emitting device configured to emit light inside a hollow shell including wavelength conversion material dispersed therein or thereon. A semiconductor light emitting apparatus according to some embodiments is capable of generating in excess of 230 lumens per watt. | 05-24-2012 |
20120193649 | LIGHT EMITTING DIODE (LED) ARRAYS INCLUDING DIRECT DIE ATTACH AND RELATED ASSEMBLIES - An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads. The second light emitting diode die may include second anode and cathode contacts respectively coupled to the third and fourth electrically conductive pads using metallic bonds. Widths of the metallic bonds between the second anode contact and the second pad and between the second cathode contact and the third pad may be at least 60 percent of a width of the first light emitting diode die. | 08-02-2012 |
20120193660 | HORIZONTAL LIGHT EMITTING DIODES INCLUDING PHOSPHOR PARTICLES - Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 μm is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount. | 08-02-2012 |
20120193661 | GAP ENGINEERING FOR FLIP-CHIP MOUNTED HORIZONTAL LEDS - A horizontal LED die is flip-chip mounted on a mounting substrate to define a gap that extends between the closely spaced apart anode and cathode contacts of the LED die, and between the closely spaced apart anode and cathode pads of the substrate. An encapsulant is provided on the light emitting diode die and the mounting substrate. The gap is configured to prevent sufficient encapsulant from entering the gap that would degrade operation of the LED. | 08-02-2012 |
20120305958 | RED NITRIDE PHOSPHORS - Provided according to embodiments of the invention are phosphor compositions that include Ca | 12-06-2012 |
20130038644 | ALIGNED MULTIPLE EMITTER PACKAGE - A multiple element emitter package is disclosed for increasing color fidelity and heat dissipation, improving current control, and increasing rigidity of the package assembly. In one embodiment, the package comprises a casing with a cavity extending into the interior of the casing from a first main surface. A lead frame is at least partially encased by the casing, the lead frame comprising a plurality of electrically conductive parts carrying a linear array of LEDs. Electrically conductive parts, separate from the parts carrying the LEDs, have a connection pad, wherein the LEDs are electrically coupled to the connection pad, such as by a wire bond. This arrangement allows for a respective electrical signal to be applied to each of the LEDs. The emitter package may be substantially waterproof, and an array of the emitter packages may be used in an LED display such as an indoor and/or outdoor LED screen. | 02-14-2013 |
20130069089 | High Efficacy Semiconductor Light Emitting Devices Employing Remote Phosphor Configurations - A semiconductor light emitting apparatus a semiconductor light emitting device configured to emit light inside a hollow shell including wavelength conversion material dispersed therein or thereon. A semiconductor light emitting apparatus according to some embodiments is capable of generating in excess of 250 lumens per watt, and in some cases up to 270 lumens per watt. | 03-21-2013 |
20130082291 | Light Emitting Devices with Low Packaging Factor - A light emitting diode that when encapsulated within an overmolded hemispherical lens has a packaging factor less than 1.2. | 04-04-2013 |
20130146904 | Optoelectronic Structures with High Lumens Per Wafer - An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens. | 06-13-2013 |
20130264589 | WAFER LEVEL PACKAGING OF LIGHT EMITTING DIODES (LEDS) - An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. | 10-10-2013 |
20130341593 | GROUP III NITRIDE BASED QUANTUM WELL LIGHT EMITTING DEVICE STRUCTURES WITH AN INDIUM CONTAINING CAPPING STRUCTURE - Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum. | 12-26-2013 |
20130341656 | Miniature Surface Mount Device - A surface mount LED package includes a lead frame carrying a plurality of LEDs and a plastic casing at least partially encasing the lead frame. The lead frame includes an electrically conductive chip carrier and first, second, and third electrically conductive connection parts separate from the electrically conductive chip carrier. Each of the first, second and third electrically conductive connection parts has an upper surface, a lower surface, and a connection pad on the upper surface. The plurality of LEDs are disposed on an upper surface of the electrically conductive chip carrier. Each LED has a first electrical terminal electrically coupled to the electrically conductive chip carrier. Each LED has a second electrical terminal electrically coupled to the connection pad of a corresponding one of the first, second, and third electrically conductive connection parts. | 12-26-2013 |